36 lines
1012 B
Plaintext
36 lines
1012 B
Plaintext
One-Dimensional Diode Simulation
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* Several simulations are performed by this file.
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* They are:
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* 1. An operating point at 0.7v forward bias.
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* 2. An ac analysis at 0.7v forward bias.
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* 3. The forward and reverse bias characteristics from -3v to 2v.
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Vpp 1 0 0.7v (PWL 0ns 3.0v 0.01ns -6.0v) (AC 1v)
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Vnn 2 0 0v
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D1 1 2 M_PN AREA=100
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.model M_PN numd level=1
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+ ***************************************
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+ *** One-Dimensional Numerical Diode ***
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+ ***************************************
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+ options defa=1p
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+ x.mesh loc=0.0 n=1
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+ x.mesh loc=1.3 n=201
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+ domain num=1 material=1
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+ material num=1 silicon
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+ mobility mat=1 concmod=ct fieldmod=ct
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+ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.0 char.l=0.100
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+ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3
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+ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.l=0.100
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+ models bgn aval srh auger conctau concmob fieldmob
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+ method ac=direct
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.option acct bypass=0 abstol=1e-18 itl2=100
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.op
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.ac dec 10 100kHz 10gHz
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.dc Vpp -3.0v 2.0001v 50mv
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.print i(Vpp)
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.END
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