68 lines
1.8 KiB
Plaintext
68 lines
1.8 KiB
Plaintext
BICMOS INVERTER PULLUP CIRCUIT
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VDD 1 0 5.0V
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VSS 2 0 0.0V
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VIN 3 0 0.75V
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VC 1 11 0.0V
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VB 5 15 0.0V
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Q1 11 15 4 M_NPN AREA=4
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M1 5 3 1 1 M_PMOS W=20U L=2U AD=30P AS=30P PD=21U PS=21U
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CL 4 0 5.0PF
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.IC V(4)=0.75V V(5)=0.0V
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.MODEL M_PMOS PMOS VTO=-0.8 UO=250 TOX=25N NSUB=5E16
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+ UCRIT=10K UEXP=.15 VMAX=50K NEFF=2 XJ=.02U
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+ LD=.15U CGSO=.1N CGDO=.1N CJ=.12M MJ=0.5
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+ CJSW=0.3N MJSW=0.5 LEVEL=2
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.MODEL M_NPN NBJT LEVEL=2
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+ TITLE TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
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+ $ SINCE ONLY HALF THE DEVICE IS SIMULATED, DOUBLE THE UNIT WIDTH TO GET
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+ $ 1.0 UM EMITTER.
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+ OPTIONS DEFW=2.0U
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+ OUTPUT STATISTICS
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+
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+ X.MESH W=2.0 H.E=0.02 H.M=0.5 R=2.0
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+ X.MESH W=0.5 H.S=0.02 H.M=0.2 R=2.0
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+
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+ Y.MESH L=-0.2 N=1
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+ Y.MESH L= 0.0 N=5
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+ Y.MESH W=0.10 H.E=0.004 H.M=0.05 R=2.5
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+ Y.MESH W=0.15 H.S=0.004 H.M=0.02 R=2.5
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+ Y.MESH W=1.05 H.S=0.02 H.M=0.1 R=2.5
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+
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+ DOMAIN NUM=1 MATERIAL=1 X.L=2.0 Y.H=0.0
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+ DOMAIN NUM=2 MATERIAL=2 X.H=2.0 Y.H=0.0
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+ DOMAIN NUM=3 MATERIAL=3 Y.L=0.0
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+ MATERIAL NUM=1 POLYSILICON
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+ MATERIAL NUM=2 OXIDE
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+ MATERIAL NUM=3 SILICON
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+
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+ ELEC NUM=1 X.L=0.0 X.H=0.0 Y.L=1.1 Y.H=1.3
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+ ELEC NUM=2 X.L=0.0 X.H=0.5 Y.L=0.0 Y.H=0.0
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+ ELEC NUM=3 X.L=2.0 X.H=3.0 Y.L=-0.2 Y.H=-0.2
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+
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+ DOPING GAUSS N.TYPE CONC=3E20 X.L=2.0 X.H=3.0 Y.L=-0.2 Y.H=0.0
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+ + CHAR.L=0.047 LAT.ROTATE
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+ DOPING GAUSS P.TYPE CONC=5E18 X.L=0.0 X.H=5.0 Y.L=-0.2 Y.H=0.0
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+ + CHAR.L=0.100 LAT.ROTATE
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+ DOPING GAUSS P.TYPE CONC=1E20 X.L=0.0 X.H=0.5 Y.L=-0.2 Y.H=0.0
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+ + CHAR.L=0.100 LAT.ROTATE RATIO=0.7
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+ DOPING UNIF N.TYPE CONC=1E16 X.L=0.0 X.H=5.0 Y.L=0.0 Y.H=1.3
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+ DOPING GAUSS N.TYPE CONC=5E19 X.L=0.0 X.H=5.0 Y.L=1.3 Y.H=1.3
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+ + CHAR.L=0.100 LAT.ROTATE
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+
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+ METHOD AC=DIRECT ITLIM=10
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+ MODELS BGN SRH AUGER CONCTAU CONCMOB FIELDMOB
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.TRAN 0.5NS 4.0NS
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.PRINT TRAN V(3) V(4)
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.OPTION ACCT BYPASS=1
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.END
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