few parameter adaptions to version 2.40
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@ -9,19 +9,17 @@
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+ hfe = 10.01
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+ hfc = 20.04
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+ hjei = 3.382
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+ hjci = 0.2
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+ ahjei = 3
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+ rhjei = 2
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+ hjci = 0.2
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*
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*Base-Emitter diode currents
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+ ibeis = 1.328e-019
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+ mbei = 1.027
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*+ ireis = 1.5e-014
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+ ireis = 1.5e-015
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+ mrei = 2
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+ ibeps = 1.26e-019
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+ mbep = 1.042
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*+ ireps = 1.8e-014
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+ ireps = 1.8e-015
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+ mrep = 1.8
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+ mcf = 1
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@ -59,7 +57,6 @@
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+ rcx = 2.483
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*
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*Substrate transistor
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*+ itss = 1.143e-019
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+ itss = 1.143e-017
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+ msf = 1.056
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+ iscs = 4.60106e-015
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@ -111,11 +108,12 @@
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+ vlim = 0.6999
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+ vces = 0.01
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+ vpt = 2
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+ aick = 1e-3
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+ delck = 2
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+ tr = 0
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+ acbar = 1.5
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+ icbar = 0.01
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+ vcbar = 0.04
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+ icbar = 0.01
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+ acbar = 1.5
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*
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*Isolation Capacitances
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+ cbepar = 2.609e-014
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@ -131,10 +129,12 @@
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+ af = .75
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+ cfbe = -1
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+ flcono = 0
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+ kfre = 0.0
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+ afre = 2.0
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*
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*Lateral Geometry Scaling (at high current densities)
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+ latb = 0
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+ latl = 0
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+ latb = 0.0
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+ latl = 0.0
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*
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*Temperature dependence
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+ vgb = 0.91
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@ -156,6 +156,7 @@
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+ zetact = 5
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+ zetabet = 4.892
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+ alb = 0
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+ dvgbe = 0
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+ zetahjei = -0.5
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+ zetavgbe = 0.7
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*
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