rm unused variables and assignments

This commit is contained in:
dwarning 2020-10-21 19:20:44 +02:00 committed by Holger Vogt
parent eb4c0ac4c5
commit f2139c0a78
5 changed files with 2 additions and 14 deletions

View File

@ -165,9 +165,7 @@ BJTload(GENmodel *inModel, CKTcircuit *ckt)
}
gcsub=0;
ceqsub=0;
geqbx=0;
ceqbx=0;
geqcb=0;
gbcx=0;
cbcx=0;

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@ -2841,13 +2841,11 @@ double Ith_Iccp,Ith_Ircx,Ith_Irci,Ith_Irbx,Ith_Irbi,Ith_Ire,Ith_Irbp;
pwq=pow(xvar1,xvar2);
qlo=PSatT*(1.0-pwq*(1.0-p[14])*(1.0-p[14]))/(1.0-p[29]);
qlo_PSatT=(1.0-((1.0-p[14])*(1.0-p[14]))*pwq)/(1.0-p[29]);
qlo_Vbep=0.0;
qlo_Vbcp=0.0;
qlo_Vrth=qlo_PSatT*PSatT_Vrth;
qhi=dvh*(1.0-p[14]+0.5*p[29]*dvh/PSatT)*pwq;
qhi_dvh=(0.5*dvh*p[29]/PSatT-p[14]+1.0)*pwq+0.5*dvh*p[29]*pwq/PSatT;
qhi_PSatT=-0.5*(dvh*dvh)*p[29]*pwq/(PSatT*PSatT);
qhi_Vbep=0.0;
qhi_Vbcp=qhi_dvh*dvh_Vbcp;
qhi_Vrth=qhi_dvh*dvh_Vrth;
qhi_Vrth=qhi_Vrth+qhi_PSatT*PSatT_Vrth;
@ -2864,12 +2862,10 @@ double Ith_Iccp,Ith_Ircx,Ith_Irci,Ith_Irbx,Ith_Irbi,Ith_Ire,Ith_Irbp;
qlo=PSatT*(1.0-xvar3)/(1.0-p[29]);
qlo_PSatT=(1.0-xvar3)/(1.0-p[29]);
qlo_xvar3=-PSatT/(1.0-p[29]);
qlo_Vbep=0.0;
qlo_Vrth=qlo_PSatT*PSatT_Vrth;
qlo_Vbcp=qlo_xvar3*xvar3_Vbcp;
qlo_Vrth=qlo_Vrth+qlo_xvar3*xvar3_Vrth;
qhi=0.0;
qhi_Vbep=0.0;
qhi_Vrth=0.0;
qhi_Vbcp=0.0;
}
@ -2934,7 +2930,6 @@ double Ith_Iccp,Ith_Ircx,Ith_Irci,Ith_Irbx,Ith_Irbi,Ith_Ire,Ith_Irbp;
qlo=-PSatT*xvar3/(1.0-p[29]);
qlo_PSatT=-xvar3/(1.0-p[29]);
qlo_xvar3=-PSatT/(1.0-p[29]);
qlo_Vbep=0.0;
qlo_Vrth=qlo_PSatT*PSatT_Vrth;
qlo_Vbcp=qlo_xvar3*xvar3_Vbcp;
qlo_Vrth=qlo_Vrth+qlo_xvar3*xvar3_Vrth;

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@ -29,7 +29,6 @@ VDMOSdSetup(GENmodel *inModel, CKTcircuit *ckt)
double vdsat;
double vgd;
double vgs;
double vt;
double gm2;
double gds2;
double gmds;
@ -49,8 +48,6 @@ VDMOSdSetup(GENmodel *inModel, CKTcircuit *ckt)
for (here = VDMOSinstances(model); here != NULL ;
here=VDMOSnextInstance(here)) {
vt = CONSTKoverQ * here->VDMOStemp;
Beta = here->VDMOStTransconductance;
OxideCap = model->VDMOSoxideCapFactor * here->VDMOSm;

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@ -60,7 +60,7 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
double rd0T, rd1T, dBeta_dT, dIds_dT;
double Vrd=0.0, dIth_dVrd=0.0, dIrd_dT=0.0;
double drd0T_dT, drd1T_dT, drd_dT, dgdrain_dT=0.0;
double dIrd_dVrd, dIrd_dgdrain;
double dIrd_dgdrain;
double deldelTemp=0.0, delTemp, delTemp1, Temp, Vds, Vgs;
double ceqqth=0.0;
double GmT, gTtg, gTtdp, gTtt, gTtsp, gcTt=0.0;
@ -445,7 +445,6 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
Vrd = *(ckt->CKTrhsOld + here->VDMOSdNode) - *(ckt->CKTrhsOld + here->VDMOSdNodePrime);
dIth_dVrd = here->VDMOSdrainConductance * Vrd;
dIrd_dVrd = here->VDMOSdrainConductance;
dIrd_dgdrain = Vrd;
dIrd_dT = dIrd_dgdrain * dgdrain_dT;
here->VDMOScth += here->VDMOSdrainConductance * Vrd*Vrd - dIth_dVrd*Vrd - dIrd_dT*Vrd*delTemp;

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@ -136,8 +136,8 @@ void VDMOStempUpdate(VDMOSmodel *inModel, VDMOSinstance *here, double Temp, CKTc
cbv = model->VDIOibv;
if (cbv < here->VDIOtSatCur * tBreakdownVoltage / vt) {
cbv = here->VDIOtSatCur * tBreakdownVoltage / vt;
#ifdef TRACE
cbv = here->VDIOtSatCur * tBreakdownVoltage / vt;
SPfrontEnd->IFerrorf(ERR_WARNING, "%s: breakdown current increased to %g to resolve", here->VDMOSname, cbv);
SPfrontEnd->IFerrorf(ERR_WARNING,
"incompatibility with specified saturation current");
@ -148,7 +148,6 @@ void VDMOStempUpdate(VDMOSmodel *inModel, VDMOSinstance *here, double Temp, CKTc
tol = ckt->CKTreltol*cbv;
xbv = tBreakdownVoltage - model->VDIObrkdEmissionCoeff*vt*log(1 + cbv /
(here->VDIOtSatCur));
iter = 0;
for (iter = 0; iter < 25; iter++) {
xbv = tBreakdownVoltage - model->VDIObrkdEmissionCoeff*vt*log(cbv /
(here->VDIOtSatCur) + 1 - xbv / vt);