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ksubthres added to model parameter sets using weak inversion. Weak inversion characteristics are aligned by comparing LTSPICE and ngspice simulations, ksubthres is selected to offer best fit.

This commit is contained in:
Holger Vogt 2018-04-29 09:50:04 +02:00 committed by rlar
parent 68fbc49216
commit ed3941c87d
2 changed files with 10 additions and 17 deletions
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18
vdmos/lt-mos-models-2012.lib → vdmos/lt-ng-mos-models-2012-2018.lib
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@ -1,6 +1,8 @@
* Copyright (c) 2000-2012 Linear Technology Corporation. All rights reserved.
* Modified by Holger Vogt 2018
* Models parameter sets are modified by adding the parameter ksubthres.
* Weak inversion characteristics are aligned by comparing LTSPICE and ngspice simulations, ksubthres is selected to offer best fit.
*
.MODEL KP505A VDMOS(KP=3 RS=0.05 RD=0.004 RG=100 Rds=300Meg VTO=1.7 LAMBDA=0.05 CGDMAX=202p CGDMIN=5p CGS=285p TT=720n a=0.25 is=10p n=1.2 Rb=0.21 m=0.368 Vj=1.77 Cjo=185pF mfg=USSR Vds=50 Ron=0.3)
.MODEL kp505g VDMOS(KP=2.5 RS=0.0022 RD=0.0001 RG=100 Rds=8Meg VTO=0.6 LAMBDA=0.1 CGDMAX=466p CGDMIN=39p CGS=150p TT=720n a=2.59 is=100p n=1.1 Rb=0.12 m=0.437 Vj=0.62 Cjo=160pF mfg=USSR Vds=8 Ron=1)
.MODEL KP301B VDMOS(pchan KP=200u Mtriode=2.5 RS=200 RD=100 RG=60 VTO=-4 LAMBDA=0.03 CGDMAX=1.5p CGDMIN=1p CGS=1.5p TT=720n is=10n n=1 Rb=10 m=0.5 Vj=1 Cjo=10p mfg=USSR Vds=-20 Ron=1000)
@ -144,7 +146,7 @@
.model SI3445DV VDMOS(pchan Rg=3 Rd=15m Rs=6m Vto=-.85 Kp=18 Cgdmax=1n Cgdmin=.44n cgs=1.2n Cjo=.1n Is=.045nA Rb=.026 N=1.127 mfg=Siliconix Vds=-8 Ron=34m Qg=15n)
.model SI4467DY VDMOS(pchan Rg=3 Vto=-.7 Rd=4m Rs=3m Rb=5m Kp=90 Cgdmax=3.4n Cgdmin=1.5n Cgs=10n Cjo=3.72n Is=172p mfg=Fairchild Vds=-20 Ron=10m Qg=86n)
.model SI7454DP VDMOS(Rg=3 Vto=3.8 Rd=13.6m Rs=10.2m Rb=17m Kp=42 Cgdmax=.5n Cgdmin=.1n Cgs=1.6n Cjo=.48n Is=48p mfg=Siliconix Vds=100 Ron=34m Qg=24n)
.model SPA11N60C3 VDMOS(Rg=.86 Vto=4.08 subthres=10m Mtriode=.8 Rd=275m Rs=60m Rb=22m Kp=40 A=2.2 Cgdmax=2.7n Cgdmin=10p Cgs=1.5n Cjo=.7n Is=20p mfg=Infineon Vds=650 Ron=340m Qg=45n)
.model SPA11N60C3 VDMOS(Rg=.86 Vto=4.08 subthres=10m ksubthres=27m Mtriode=.8 Rd=275m Rs=60m Rb=22m Kp=40 A=2.2 Cgdmax=2.7n Cgdmin=10p Cgs=1.5n Cjo=.7n Is=20p mfg=Infineon Vds=650 Ron=340m Qg=45n)
.model STB120NF10 VDMOS(Rg=3 Vto=3.7 Rd=3.6m Rs=2.7m Rb=5m Kp=92 Cgdmax=4n Cgdmin=1n Cgs=4n Cjo=2n Is=200p mfg=STMicroelectronics Vds=100 Ron=9m Qg=172n)
.model STP8NM60 VDMOS(Rg=4 Vto=5.3 Rd=650m Rs=50m Rb=450m lambda=.005 Kp=1 Cgdmax=.1n Cgdmin=.01n Cgs=.7n Cjo=.3n Is=13p mfg=STMicroelectronics Vds=650 Ron=900m Qg=13n)
.model STW11NM80 VDMOS(Rg=3 Vto=4.5 Rd=140m Rs=100m Rb=175m Kp=30 Cgdmax=.5n Cgdmin=.05n Cgs=2n Cjo=.3n Is=88p mfg=STMicroelectronics Vds=800 Ron=350m Qg=44n)
@ -598,8 +600,8 @@
.model IPU135N03L VDMOS(Rg=1.2 Vto=2.77 Rd=7.36m Rs=2.35m Rb=4.88m Kp=84.9 Lambda=0.09 Cgdmin=12p Cgdmax=0.18n A=0.6 Cgs=0.75n Cjo=0.96n M=0.3 Is=6.6p VJ=0.9 N=1.1 TT=3n mfg=Infineon Vds=30 Ron=13.7m Qg=5n)
.model IPU135N08N3 VDMOS(Rg=2 Vto=3.9 Rd=6.7m Rs=1.32m Rb=4.02m Kp=58.4 Lambda=0.03 Cgdmin=8p Cgdmax=0.42n A=0.2 Cgs=1.29n Cjo=1.16n M=0.27 Is=25.1p VJ=0.9 N=1.16 TT=40n mfg=Infineon Vds=80 Ron=13.5m Qg=19n)
.model FDS2734 VDMOS(Rg=3 Rd=100m Rs=0 Vto=3.3 Kp=11 Lambda=.03 mtriode=4 Cgdmax=1000p Cgdmin=30p Cgs=2n Cjo=1n Is=2.8p Rb=3.3m mfg=Fairchild Vds=250 Ron=117m Qg=32n)
.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p TT=1371n a=1 IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF subthres=2.5m)
.MODEL IXTH20N50D VDMOS KP=1.9 RS=1m RD=.222 VTO=-1.5 RDS=20E6 Lambda=4m subthres=8m CJO=4.9n M=1.5 a=1 CGDMAX=900p CGDMIN=80p CGS=6200p a=1 VJ=2.6 RG=10m IS=1.37u N=2
.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p TT=1371n a=1 IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF subthres=2.5m ksubthres=39m)
.MODEL IXTH20N50D VDMOS KP=1.9 RS=1m RD=.222 VTO=-1.5 RDS=20E6 Lambda=4m subthres=8m ksubthres=85m CJO=4.9n M=1.5 a=1 CGDMAX=900p CGDMIN=80p CGS=6200p VJ=2.6 RG=10m IS=1.37u N=2
.model IRFH5004 VDMOS(Rg=1.7 Vto=3.7 Rd=0.4m Rs=0.10m Rb=0.9m Kp=90 Cgdmax=3.5n Cgdmin=0.4n Cgs=3n Cjo=1.7n Is=9p tt=34n mfg=International_Rectifier Vds=40 Ron=2.2m Qg=75n)
.model IRFH5015 VDMOS(Rg=1.7 Vto=4.95 Rd=17m Rs=0m Rb=1.45m Kp=24 Cgdmax=1.0n Cgdmin=0.07n Cgs=1.8n Cjo=1.45n Is=60p tt=42n mfg=International_Rectifier Vds=150 Ron=25.5m Qg=33n)
.model IRFH5020 VDMOS(Rg=1.9 Vto=4.4 Rd=33m Rs=0m Rb=2.2m Kp=13 Cgdmax=1.45n Cgdmin=0.025n Cgs=1.8n Cjo=1.3n Is=59p tt=46n mfg=International_Rectifier Vds=200 Ron=47m Qg=36n)
@ -832,14 +834,14 @@
.model SiR802DP VDMOS(Rg=.75 Rd=3.7m Rs=0 Vto=1.2 Kp=100 lambda=.06 Cgdmax=1n Cgdmin=200p Cgs=2n Cjo=1n Is=50p Rb=2.5m mtriode=2.8 mfg=Siliconix Vds=20 Ron=5.7m Qg=15.5n)
.model Si2318CDS VDMOS(Rg=3 Vto=2 Rd=16m Rs=16m Rb=15m Kp=22 lambda=.1 mtriode=2 Cgdmax=110p Cgdmin=20p Cgs=400p Cjo=400p Is=1.5p mfg=Siliconix Vds=40 Ron=51m Qg=2.9n)
.model RJK0451DPB VDMOS(Rg=.7 Vto=2.31 Rd=2m Rs=1m Rb=.25m Kp=160 lambda=.05 mtriode=.6 Cgdmax=200p Cgdmin=100p Cgs=1n Cjo=1n Is=2p mfg=Renesas Vds=40 Ron=5.5m Qg=14n)
.model FDB3682 VDMOS(Rg=3 Rd=26.8m Vto=4 subthres=.1 mtriode=1.8 Kp=18 Cgdmax=400p Cgdmin=20p A=.5 Cgs=1.25n Cjo=1n M=.6 Is=1.8p Rb=14.2m mfg=Fairchild Vds=100 Ron=32m Qg=18.5n)
.model Si7489DP VDMOS(Rg=3 Rd=31.2m Rs=1m Vto=-2.4 subthres=.03 mtriode=2.2 Kp=35 lambda=0.1 Cgdmax=6n Cgdmin=10p A=1 Cgs=4n cjo=200p M=.3 VJ=.9 Is=3.6p Rb=5.5m mfg=Siliconix Vds=-100 Ron=3.3m Qg=106n pchan)
.model HUFA76645 VDMOS(Rg=3 Rd=9.4m Rs=.8m Vto=2 subthres=.01 mtriode=1 Kp=128 Cgdmax=8n Cgdmin=10p A=.6 Cgs=3n cjo=3.5n M=.55 VJ=.9 Is=3.6p Rb=2.24m mfg=Fairchild Vds=100 Ron=15m Qg=34n)
.model FDB3682 VDMOS(Rg=3 Rd=26.8m Vto=4 subthres=.1 ksubthres=96m mtriode=1.8 Kp=18 Cgdmax=400p Cgdmin=20p A=.5 Cgs=1.25n Cjo=1n M=.6 Is=1.8p Rb=14.2m mfg=Fairchild Vds=100 Ron=32m Qg=18.5n)
.model Si7489DP VDMOS(Rg=3 Rd=31.2m Rs=1m Vto=-2.4 subthres=.03 ksubthres=39m mtriode=2.2 Kp=35 lambda=0.1 Cgdmax=6n Cgdmin=10p A=1 Cgs=4n cjo=200p M=.3 VJ=.9 Is=3.6p Rb=5.5m mfg=Siliconix Vds=-100 Ron=3.3m Qg=106n pchan)
.model HUFA76645 VDMOS(Rg=3 Rd=9.4m Rs=.8m Vto=2 subthres=.01 ksubthres=27.3m mtriode=1 Kp=128 Cgdmax=8n Cgdmin=10p A=.6 Cgs=3n cjo=3.5n M=.55 VJ=.9 Is=3.6p Rb=2.24m mfg=Fairchild Vds=100 Ron=15m Qg=34n)
.model SUM85N03-06P VDMOS(Rg=3 Vto=2.7 Rd=1.02m Rs=2.4m Rb=3m Kp=81 Mtriode=1.66 Cgdmax=1.3n Cgdmin=.2n Cgs=2.9n Cjo=1.4n m=.4 a=2 Vj=.7 lambda=1m Is=10p mfg=Siliconix Vds=30 Ron=4.5m Qg=48n)
.MODEL VN10KM NMOS (LEVEL=1 VTO=1.4 KP=1.55E-01 PHI=0.75 LAMBDA=2.9E-04 RD=7.60E-01 RS=7.60E-01 IS=6.46E-14 CBD=3.28E-11 CBS=3.94E-11 PB=0.80 MJ=.46 CGSO=2.40E-08 CGDO=2.00E-08 CGBO=3.36E-07 mfg=Siliconix Vds=60 Ron=4 )
.model FDMS86500DC VDMOS(Rg=3 Vto=4.9 Rd=.74m Rs=.1m Rb=.6m Kp=70 Mtriode=2.7 Cgdmax=1.4n Cgdmin=10p Cgs=5.5n Cjo=4n m=.4 a=.2 Vj=.7 lambda=110m Is=4p mfg=Fairchild Vds=60 Ron=1.9m Qg=76n)
.MODEL XP161A1355PR VDMOS(KP=21.5031 RS=0.0101 RD=0.0051 RG=1 VTO=0.85 LAMBDA=0.001 CGDMAX=1202p CGDMIN=40p CGS=280p TT=720n a=1.11 IS=20f N=1 RB=15m m=0.424 Vj=0.65 Cjo=450pF mfg=Torex Vds=60 Ron=100m Qg=5n)
.model FDMS3622SQ1 VDMOS(mtriode=2 Rg=1.4 Vto=1.58 Rd=3m Rs=.3m Rb=3.m Kp=130 Lambda=.2 Cgdmin=70p Cgdmax=.68n A=.9 Cgs=1.6n Cjo=1.3n M=0.3 Vj=.9 Is=142p N=1.1 mfg=Fairchild Vds=25 Ron=5m Qg=12n)
.model FDMS3622SQ2 VDMOS(mtriode=3 Rg=.8 Vto=1.87 Rd=.8m Rs=.08m Rb=5m Kp=280 Lambda=.5 Cgdmin=120p Cgdmax=2n A=.9 Cgs=6.3n Cjo=3.5n M=0.42 Vj=.9 Is=10u N=1.1 mfg=Fairchild Vds=25 Ron=1.1m Qg=40n)
.model Si7102DN VDMOS(mtriode=2.3 Rg=1.4 vto=.843 subthres=180m Rd=1.1m Rs=1.75m Rb=5m Kp=350 Lambda=10m Cgdmin=800p Cgdmax=4.6n A=3 Cgs=3.4n Cjo=1.3n M=0.5 VJ=0.7 Is=2n N=1.05 TT=0 mfg=Vishay Vds=12 Ron=3.8m Qg=41n)
.model Si7102DN VDMOS(mtriode=2.3 Rg=1.4 vto=.843 subthres=180m ksubthres=31m Rd=1.1m Rs=1.75m Rb=5m Kp=350 Lambda=10m Cgdmin=800p Cgdmax=4.6n A=3 Cgs=3.4n Cjo=1.3n M=0.5 VJ=0.7 Is=2n N=1.05 TT=0 mfg=Vishay Vds=12 Ron=3.8m Qg=41n)

9
vdmos/lt-vdmos-ksubthres.lib
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@ -1,9 +0,0 @@
* Models parameter sets are modified by adding the parameter ksubthres.
* Weak inversion characteristics are aligned by comparing LTSPICE and ngspice simulations, ksubthres is selected to offer best fit.
.model FDB3682 VDMOS(Rg=3 Rd=26.8m Vto=4 subthres=.1 ksubthres=96m mtriode=1.8 Kp=18 Cgdmax=400p Cgdmin=20p A=.5 Cgs=1.25n Cjo=1n M=.6 Is=1.8p Rb=14.2m mfg=Fairchild Vds=100 Ron=32m Qg=18.5n)
.model Si7489DP VDMOS(Rg=3 Rd=31.2m Rs=1m Vto=-2.4 subthres=.03 ksubthres=39m mtriode=2.2 Kp=35 lambda=0.1 Cgdmax=6n Cgdmin=10p A=1 Cgs=4n cjo=200p M=.3 VJ=.9 Is=3.6p Rb=5.5m mfg=Siliconix Vds=-100 Ron=3.3m Qg=106n pchan)
.model HUFA76645 VDMOS(Rg=3 Rd=9.4m Rs=.8m Vto=2 subthres=.01 ksubthres=27.3m mtriode=1 Kp=128 Cgdmax=8n Cgdmin=10p A=.6 Cgs=3n cjo=3.5n M=.55 VJ=.9 Is=3.6p Rb=2.24m mfg=Fairchild Vds=100 Ron=15m Qg=34n)
.model Si7102DN VDMOS(mtriode=2.3 Rg=1.4 vto=.843 subthres=180m ksubthres=31m Rd=1.1m Rs=1.75m Rb=5m Kp=350 Lambda=10m Cgdmin=800p Cgdmax=4.6n A=3 Cgs=3.4n Cjo=1.3n M=0.5 VJ=0.7 Is=2n N=1.05 TT=0 mfg=Vishay Vds=12 Ron=3.8m Qg=41n)
.model SPA11N60C3 VDMOS(Rg=.86 Vto=4.08 subthres=10m ksubthres=27m Mtriode=.8 Rd=275m Rs=60m Rb=22m Kp=40 A=2.2 Cgdmax=2.7n Cgdmin=10p Cgs=1.5n Cjo=.7n Is=20p mfg=Infineon Vds=650 Ron=340m Qg=45n)
.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p TT=1371n a=1 IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF subthres=2.5m ksubthres=39m
.MODEL IXTH20N50D VDMOS KP=1.9 RS=1m RD=.222 VTO=-1.5 RDS=20E6 Lambda=4m subthres=8m ksubthres=85m CJO=4.9n M=1.5 a=1 CGDMAX=900p CGDMIN=80p CGS=6200p VJ=2.6 RG=10m IS=1.37u N=2