parent
3f816d7f1b
commit
ebc39c941e
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@ -279,8 +279,8 @@ IOP( "ntox", B3SOIPD_MOD_NTOX, IF_REAL, "power term of gate current"),
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IOP( "toxref", B3SOIPD_MOD_TOXREF, IF_REAL, "target oxide thickness"),
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IOP( "ebg", B3SOIPD_MOD_EBG, IF_REAL, "effective bandgap in gate current calcula."),
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IOP( "vevb", B3SOIPD_MOD_VEVB, IF_REAL, "Vaux parameter for valence-band electron tunneling"),
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IOP( "alphagb1", B3SOIPD_MOD_ALPHAGB1, IF_REAL, "First Vox dependent parameter for gate curent in inversion"),
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IOP( "betagb1", B3SOIPD_MOD_BETAGB1, IF_REAL, "Second Vox dependent parameter for gate currnt in inversion"),
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IOP( "alphagb1", B3SOIPD_MOD_ALPHAGB1, IF_REAL, "First Vox dependent parameter for gate current in inversion"),
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IOP( "betagb1", B3SOIPD_MOD_BETAGB1, IF_REAL, "Second Vox dependent parameter for gate current in inversion"),
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IOP( "vgb1", B3SOIPD_MOD_VGB1, IF_REAL, "Third Vox dependent parameter for gate current in inversion"),
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IOP( "vecb", B3SOIPD_MOD_VECB, IF_REAL, "Vaux parameter for conduction-band electron tunneling"),
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IOP( "alphagb2", B3SOIPD_MOD_ALPHAGB2, IF_REAL, "First Vox dependent parameter for gate current in accumulation"),
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@ -489,8 +489,8 @@ IOP( "ntox", B4SOI_MOD_NTOX, IF_REAL, "power term of gate current"),
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IOP( "toxref", B4SOI_MOD_TOXREF, IF_REAL, "target oxide thickness"),
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IOP( "ebg", B4SOI_MOD_EBG, IF_REAL, "effective bandgap in gate current calcula."),
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IOP( "vevb", B4SOI_MOD_VEVB, IF_REAL, "Vaux parameter for valence-band electron tunneling"),
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IOP( "alphagb1", B4SOI_MOD_ALPHAGB1, IF_REAL, "First Vox dependent parameter for gate curent in inversion"),
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IOP( "betagb1", B4SOI_MOD_BETAGB1, IF_REAL, "Second Vox dependent parameter for gate currnt in inversion"),
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IOP( "alphagb1", B4SOI_MOD_ALPHAGB1, IF_REAL, "First Vox dependent parameter for gate current in inversion"),
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IOP( "betagb1", B4SOI_MOD_BETAGB1, IF_REAL, "Second Vox dependent parameter for gate current in inversion"),
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IOP( "vgb1", B4SOI_MOD_VGB1, IF_REAL, "Third Vox dependent parameter for gate current in inversion"),
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IOP( "vecb", B4SOI_MOD_VECB, IF_REAL, "Vaux parameter for conduction-band electron tunneling"),
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IOP( "alphagb2", B4SOI_MOD_ALPHAGB2, IF_REAL, "First Vox dependent parameter for gate current in accumulation"),
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@ -172,13 +172,13 @@ int HSM2setup(
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if ( model->HSM2_codep_Given ) {
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if( model->HSM2_codep != 0 && model->HSM2_codep != 1 ) {
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printf("warning(HiSIM): Invalid CODEP (%d) was specified, resetted to 0.\n",model->HSM2_codep);
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printf("warning(HiSIM): Invalid CODEP (%d) was specified, reset to 0.\n",model->HSM2_codep);
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model->HSM2_codep = 0 ;
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}
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}
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if ( model->HSM2_coddlt_Given ) {
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if( model->HSM2_coddlt != 0 && model->HSM2_coddlt != 1 ) {
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printf("warning(HiSIM): Invalid CODDLT (%d) was specified, resetted to 0.\n",model->HSM2_coddlt);
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printf("warning(HiSIM): Invalid CODDLT (%d) was specified, reset to 0.\n",model->HSM2_coddlt);
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model->HSM2_coddlt = 0 ;
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}
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}
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@ -777,15 +777,15 @@ int HSM2setup(
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RANGECHECK(model->HSM2_depleak, 0.0, 10.0, "DEPLEAK" ) ;
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if( model->HSM2_corecip ) {
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printf("warning(HiSIM): CORECIP is not supported yet in depletion mode MOSFET, resetted to 0.\n");
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printf("warning(HiSIM): CORECIP is not supported yet in depletion mode MOSFET, reset to 0.\n");
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model->HSM2_corecip = 0;
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}
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if( model->HSM2_copprv ) {
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printf("warning(HiSIM): COPPRV is not supported yet in depletion mode MOSFET, resetted to 0.\n");
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printf("warning(HiSIM): COPPRV is not supported yet in depletion mode MOSFET, reset to 0.\n");
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model->HSM2_copprv = 0;
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}
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if( model->HSM2_corsrd == 1 ) {
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printf("warning(HiSIM): CORSRD=1 is not supported yet in depletion mode MOSFET, resetted to -1.\n");
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printf("warning(HiSIM): CORSRD=1 is not supported yet in depletion mode MOSFET, reset to -1.\n");
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model->HSM2_corsrd = -1;
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}
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if( model->HSM2_coisti ) {
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@ -188,7 +188,7 @@ int HSMHV2setup(
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if ( !model->HSMHV2_codep_Given ) model->HSMHV2_codep = 0 ;
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if ( model->HSMHV2_codep_Given ) {
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if( model->HSMHV2_codep != 0 && model->HSMHV2_codep != 1 ) {
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printf("warning(HiSIM_HV(%s)): Invalid model parameter CODEP (= %d) was specified, resetted to 0.\n",model->HSMHV2modName,model->HSMHV2_codep);
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printf("warning(HiSIM_HV(%s)): Invalid model parameter CODEP (= %d) was specified, reset to 0.\n",model->HSMHV2modName,model->HSMHV2_codep);
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model->HSMHV2_codep = 0 ;
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}
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}
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@ -196,7 +196,7 @@ int HSMHV2setup(
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if ( !model->HSMHV2_coddlt_Given ) model->HSMHV2_coddlt = 1 ;
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if ( model->HSMHV2_coddlt_Given ) {
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if( model->HSMHV2_coddlt != 0 && model->HSMHV2_coddlt != 1 ) {
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printf("warning(HiSIM_HV(%s)): Invalid model parameter CODDLT (= %d) was specified, resetted to 1.\n",model->HSMHV2modName,model->HSMHV2_coddlt);
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printf("warning(HiSIM_HV(%s)): Invalid model parameter CODDLT (= %d) was specified, reset to 1.\n",model->HSMHV2modName,model->HSMHV2_coddlt);
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model->HSMHV2_coddlt = 1 ;
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}
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}
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@ -1649,7 +1649,7 @@ do { if((here->ptr = SMPmakeElt(matrix,here->first,here->second))==NULL){\
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if( model->HSMHV2_codep == 1 && model->HSMHV2_coerrrep ) {
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if( model->HSMHV2_copprv == 1 ) {
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printf("warning(HiSIM_HV(%s)): COPPRV is not supported yet in Depletion mode mode, resetted to 0.\n",model->HSMHV2modName);
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printf("warning(HiSIM_HV(%s)): COPPRV is not supported yet in Depletion mode mode, reset to 0.\n",model->HSMHV2modName);
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}
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if( model->HSMHV2_coisti == 1 ) {
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printf("warning(HiSIM_HV(%s)): STI leak model is not supported yet in Depletion mode model, skipped\n",model->HSMHV2modName);
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@ -162,14 +162,14 @@ char *INPdomodel(CKTcircuit *ckt, struct card *image, INPtables * tab)
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type = INPtypelook("MESA");
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if (type < 0)
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{
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err = INPmkTemp("Device type MESA not availabe\n");
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err = INPmkTemp("Device type MESA not available\n");
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}
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break;
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case 3:
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type = INPtypelook("MESA");
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if (type < 0)
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{
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err = INPmkTemp("Device type MESA not availabe\n");
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err = INPmkTemp("Device type MESA not available\n");
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}
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break;
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case 4:
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