Limiting the junction potential to a usual values for silicon diodes
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@ -184,6 +184,15 @@ DIOtemp(GENmodel *inModel, CKTcircuit *ckt)
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here->DIOtVcrit = vte * log(vte/(CONSTroot2*here->DIOtSatCur));
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here->DIOtVcrit = vte * log(vte/(CONSTroot2*here->DIOtSatCur));
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/* limit junction potential to max of 1/FC */
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if(here->DIOtDepCap > 1.0) {
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here->DIOtJctPot=1.0/model->DIOdepletionCapCoeff;
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here->DIOtDepCap=model->DIOdepletionCapCoeff*here->DIOtJctPot;
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SPfrontEnd->IFerrorf (ERR_WARNING,
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"%s: junction potential VJ too large, limited to %f",
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model->DIOmodName, here->DIOtJctPot);
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}
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/* and now to compute the breakdown voltage, again, using
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/* and now to compute the breakdown voltage, again, using
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* temperature adjusted basic parameters */
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* temperature adjusted basic parameters */
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if (model->DIObreakdownVoltageGiven){
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if (model->DIObreakdownVoltageGiven){
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