VDMOS: use effektive Gatespannung for mobility reduction of Beta
This commit is contained in:
parent
b3460a7d23
commit
e1ec5db5ba
|
|
@ -364,7 +364,7 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
|
|||
/* scale vds with mtr (except with lambda) */
|
||||
double vdss = vds*mtr*here->VDMOSmode;
|
||||
double t0 = 1 + lambda*vds;
|
||||
double t1 = 1 + theta*vgs;
|
||||
double t1 = 1 + theta*vgst;
|
||||
double betap = Beta*t0/t1;
|
||||
double dbetapdvgs = -Beta*theta*t0/(t1*t1);
|
||||
double dbetapdvds = Beta*lambda/t1;
|
||||
|
|
|
|||
Loading…
Reference in New Issue