VDMOS: use effektive Gatespannung for mobility reduction of Beta

This commit is contained in:
dwarning 2025-01-18 10:02:48 +01:00
parent b3460a7d23
commit e1ec5db5ba
1 changed files with 1 additions and 1 deletions

View File

@ -364,7 +364,7 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
/* scale vds with mtr (except with lambda) */
double vdss = vds*mtr*here->VDMOSmode;
double t0 = 1 + lambda*vds;
double t1 = 1 + theta*vgs;
double t1 = 1 + theta*vgst;
double betap = Beta*t0/t1;
double dbetapdvgs = -Beta*theta*t0/(t1*t1);
double dbetapdvds = Beta*lambda/t1;