Updated diode documentation.
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doc/ngspice.texi
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doc/ngspice.texi
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@ -3632,7 +3632,8 @@ and @option{IBV} (both of which are positive numbers).
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@item TM1 @tab 1st order tempco for MJ @tab 1/°C @tab 0.0 @tab -
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@item TM2 @tab 2nd order tempco for MJ @tab 1/°C^2 @tab 0.0 @tab -
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@item TNOM @tab parameter measurement temperature @tab C @tab 27 @tab 50
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@item TRS @tab 1st order tempco for RS @tab 1/°C^2 @tab 0.0 @tab -
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@item TRS @tab 1st order tempco for RS @tab 1/°C @tab 0.0 @tab -
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@item TRS2 @tab 2nd order tempco for RS @tab 1/°C^2 @tab 0.0 @tab -
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@item TTT1 @tab 1st order tempco for TT @tab 1/°C @tab 0.0 @tab -
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@item TTT2 @tab 2nd order tempco for TT @tab 1/°C^2 @tab 0.0 @tab -
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@item XTI @tab saturation-current temp. exp @tab - @tab 3.0 @tab 3.0 pn
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@ -3867,8 +3868,161 @@ $$
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@end example
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@end ifnottex
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The temperature affects many of the parameters in the equations above,
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the following equations show how. One of the most significative parameter
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that varies with the temperature for a semiconductor is the band-gap
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energy:
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@tex
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$$
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EG_{nom} = 1.16 - 7.02e^{-4}\cdot{{\rm TNOM}^2 \over {{\rm TNOM} + 1108.0}}
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$$
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$$
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EG(T) = 1.16 - 7.02e^{-4}\cdot{T^2 \over {{\rm TNOM} + 1108.0}}
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$$
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@end tex
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@ifnottex
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@example
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2
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TNOM
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EGnom = 1.16 - 7.02e-4 * ---------------
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TNOM + 1108.0
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2
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T
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EG(T) = 1.16 - 7.02e-4 * ---------------
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TNOM + 1108.0
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@end example
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@end ifnottex
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The leakeage currents temperature dependence is:
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@tex
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$$
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IS(T) = {\rm IS}\cdot e^{logfactor \over {\rm N}}
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$$
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$$
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JSW(T) = {\rm JSW}\cdot e^{logfactor \over {\rm N}}
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$$
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@end tex
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@ifnottex
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@example
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logfactor
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---------
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N
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IS(T) = IS * e
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logfactor
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---------
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N
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JSW(T) = JSW * e
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@end example
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@end ifnottex
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where "logfactor" is defined:
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@tex
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$$
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logfactor = {{\rm EG} \over {V_t( {\rm TNOM})} } - {{\rm EG} \over {V_t(T)}} + {\rm XTI}\cdot\ln({T \over {\rm TNOM}})
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$$
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@end tex
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@ifnottex
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@example
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EG EG T
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logfactor = -------- - ----- + XTI * ln ( ---- )
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Vt(TNOM) Vt(t) TNOM
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@end example
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@end ifnottex
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The contact potentials (bottowall an sidewall) temperature dependence is:
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@tex
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$$
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VJ(T) = {\rm VJ} \cdot ({T \over {\rm TNOM}}) - V_t(T) \cdot \lbrack 3 \cdot \ln({T \over {\rm TNOM}})
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+ {{\rm EG_{nom}} \over V_t({\rm TNOM})} - {{\rm EG(T)} \over V_t(T)}\rbrack
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$$
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$$
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PHP(T) = {\rm PHP} \cdot ({T \over {\rm TNOM}}) - V_t(T) \cdot \lbrack 3 \cdot \ln({T \over {\rm TNOM}})
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+ {{\rm EG_{nom}} \over V_t({\rm TNOM})} - {{\rm EG(T)} \over V_t(T)}\rbrack
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$$
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@end tex
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@ifnottex
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@example
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T T EGnom EG(T)
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VJ(T) = VJ * ( ----- ) - Vt(T) * [ 3 * ln ( ----- ) + -------- - ----- ]
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TNOM TNOM Vt(TNOM) Vt(T)
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T T EGnom EG(T)
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PHP(T) = PHP * ( ----- ) - Vt(T) * [ 3 * ln ( ----- ) + -------- - ----- ]
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TNOM TNOM Vt(TNOM) Vt(T)
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@end example
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@end ifnottex
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The depletion capacitances temperature dependence is:
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@tex
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$$
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CJ(T) = {\rm CJ} \cdot \lbrack 1 + {\rm MJ} \cdot (4.0e^{-4}\cdot (T - {\rm TNOM})
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- {VJ(T) \over {\rm VJ}} + 1) \rbrack
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$$
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$$
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CJSW(T) = {\rm CJSW} \cdot \lbrack 1 + {\rm MJSW} \cdot (4.0e^{-4}\cdot (T - {\rm TNOM})
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- {PHP(T) \over {\rm PHP}} + 1) \rbrack
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$$
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@end tex
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@ifnottex
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@example
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PB(T)
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CJ(T) = CJ * [1 + MJ * (4.0e-4 * (T - TMON) - ----- + 1) ]
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PB
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PHP(T)
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CJSW(T) = CJSW * [1 + MJ * (4.0e-4 * (T - TMON) - ------ + 1) ]
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PHP
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@end example
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@end ifnottex
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The transit time temperature dependence is:
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@tex
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$$
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TT(T) = {\rm TT}\cdot(1 + {\rm TTT1}\cdot(T - {\rm TNOM}) + {\rm TTT2}\cdot(T - {\rm TNOM})^2)
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$$
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@end tex
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@ifnottex
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@example
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TT(T) = TT * (1 + TTT1 * (T - TNOM) + TTT2} * (T -TNOM)^2)
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@end example
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@end ifnottex
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The junction grading coefficient temperature dependece is:
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@tex
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$$
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MJ(T) = {\rm MJ}\cdot(1 + {\rm TM1}\cdot(T - {\rm TNOM}) + {\rm TM2}\cdot(T - {\rm TNOM})^2)
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$$
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@end tex
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@ifnottex
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@example
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MJ(T) = MJ * (1 + TM1 * (T - TNOM) + TM2} * (T -TNOM)^2)
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@end example
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@end ifnottex
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The series resistance temperature dependence is:
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@tex
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$$
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RS(T) = {\rm RS}\cdot(1 + {\rm TRS}\cdot(T - {\rm TNOM}) + {\rm TRS2}\cdot(T - {\rm TNOM})^2)
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$$
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@end tex
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@ifnottex
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@example
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RS(T) = RS * (1 + TRS * (T - TNOM) + TRS2} * (T -TNOM)^2)
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@end example
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@end ifnottex
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@node Bipolar Junction Transistors (BJTs), BJT Models (NPN/PNP), Diode Model (D), Transistors and Diodes
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@subsection Bipolar Junction Transistors (BJTs)
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