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https://git.code.sf.net/p/ngspice/ngspice
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bjt504t, use (*desc*) instead of (*info*), useless, they have none
This commit is contained in:
rlar
@@ -13,22 +13,22 @@ module bjt504tva (c, b, e, s, dt);
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// External ports
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// External ports
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inout c, b, e, s, dt;
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inout c, b, e, s, dt;
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electrical c `P(info="external collector node");
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electrical c `P(desc="external collector node");
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electrical b `P(info="external base node");
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electrical b `P(desc="external base node");
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electrical e `P(info="external emitter node");
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electrical e `P(desc="external emitter node");
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electrical s `P(info="external substrate node");
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electrical s `P(desc="external substrate node");
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electrical dt `P(info="external thermal node");
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electrical dt `P(desc="external thermal node");
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// Internal nodes
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// Internal nodes
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electrical c1 `P(info="internal collector node 1");
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electrical c1 `P(desc="internal collector node 1");
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electrical e1 `P(info="internal emitter node");
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electrical e1 `P(desc="internal emitter node");
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electrical b1 `P(info="internal base node 1");
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electrical b1 `P(desc="internal base node 1");
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electrical b2 `P(info="internal base node 2");
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electrical b2 `P(desc="internal base node 2");
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electrical c2 `P(info="internal collector node 2");
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electrical c2 `P(desc="internal collector node 2");
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electrical c3 `P(info="internal collector node 3");
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electrical c3 `P(desc="internal collector node 3");
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electrical c4 `P(info="internal collector node 4");
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electrical c4 `P(desc="internal collector node 4");
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// For correlated noise implementation
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// For correlated noise implementation
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electrical noi `P(info="internal noise node");
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electrical noi `P(desc="internal noise node");
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`include "parameters.inc"
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`include "parameters.inc"
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`include "variables.inc"
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`include "variables.inc"
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@@ -1,209 +1,209 @@
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// Mextram parameters
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// Mextram parameters
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parameter integer LEVEL = 504 from [504:505)
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parameter integer LEVEL = 504 from [504:505)
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`ATTR(info="Model level");
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`ATTR(desc="Model level");
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parameter real TREF = 25.0 from [-273.0:inf)
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parameter real TREF = 25.0 from [-273.0:inf)
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`ATTR(info="Reference temperature");
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`ATTR(desc="Reference temperature");
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parameter real DTA = 0.0
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parameter real DTA = 0.0
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`ATTR(info="Difference between the local and global ambient temperatures");
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`ATTR(desc="Difference between the local and global ambient temperatures");
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parameter integer EXMOD = 1 from [0:1]
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parameter integer EXMOD = 1 from [0:1]
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`ATTR(info="Flag for extended modeling of the reverse current gain");
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`ATTR(desc="Flag for extended modeling of the reverse current gain");
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parameter integer EXPHI = 1 from [0:1]
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parameter integer EXPHI = 1 from [0:1]
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`ATTR(info="Flag for the distributed high-frequency effects in transient");
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`ATTR(desc="Flag for the distributed high-frequency effects in transient");
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parameter integer EXAVL = 0 from [0:1]
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parameter integer EXAVL = 0 from [0:1]
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`ATTR(info="Flag for extended modeling of avalanche currents");
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`ATTR(desc="Flag for extended modeling of avalanche currents");
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parameter real IS = 22.0a from (0.0:inf)
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parameter real IS = 22.0a from (0.0:inf)
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`ATTR(info="Collector-emitter saturation current");
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`ATTR(desc="Collector-emitter saturation current");
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parameter real IK = 0.1 from [1.0p:inf)
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parameter real IK = 0.1 from [1.0p:inf)
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`ATTR(info="Collector-emitter high injection knee current");
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`ATTR(desc="Collector-emitter high injection knee current");
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parameter real VER = 2.5 from [0.01:inf)
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parameter real VER = 2.5 from [0.01:inf)
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`ATTR(info="Reverse Early voltage");
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`ATTR(desc="Reverse Early voltage");
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parameter real VEF = 44.0 from [0.01:inf)
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parameter real VEF = 44.0 from [0.01:inf)
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`ATTR(info="Forward Early voltage");
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`ATTR(desc="Forward Early voltage");
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parameter real BF = 215.0 from [0.1m:inf)
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parameter real BF = 215.0 from [0.1m:inf)
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`ATTR(info="Ideal forward current gain");
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`ATTR(desc="Ideal forward current gain");
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parameter real IBF = 2.7f from [0.0:inf)
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parameter real IBF = 2.7f from [0.0:inf)
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`ATTR(info="Saturation current of the non-ideal forward base current");
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`ATTR(desc="Saturation current of the non-ideal forward base current");
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parameter real MLF = 2.0 from [0.1:inf)
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parameter real MLF = 2.0 from [0.1:inf)
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`ATTR(info="Non-ideality factor of the non-ideal forward base current");
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`ATTR(desc="Non-ideality factor of the non-ideal forward base current");
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parameter real XIBI = 0.0 from [0.0:1.0]
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parameter real XIBI = 0.0 from [0.0:1.0]
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`ATTR(info="Part of ideal base current that belongs to the sidewall");
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`ATTR(desc="Part of ideal base current that belongs to the sidewall");
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// begin: RvdT, November 2008, BE tunneling current parameters:
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// begin: RvdT, November 2008, BE tunneling current parameters:
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parameter real IZEB = 0.0 from [0.0:inf)
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parameter real IZEB = 0.0 from [0.0:inf)
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`ATTR(info="Pre-factor of emitter-base Zener tunneling current");
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`ATTR(desc="Pre-factor of emitter-base Zener tunneling current");
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parameter real NZEB = 22.0 from [0.0:inf)
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parameter real NZEB = 22.0 from [0.0:inf)
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`ATTR(info="Coefficient of emitter-base Zener tunneling current");
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`ATTR(desc="Coefficient of emitter-base Zener tunneling current");
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// end: RvdT, November 2008, EB tunneling current parameters:
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// end: RvdT, November 2008, EB tunneling current parameters:
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parameter real BRI = 7.0 from [1.0e-4:inf)
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parameter real BRI = 7.0 from [1.0e-4:inf)
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`ATTR(info="Ideal reverse current gain");
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`ATTR(desc="Ideal reverse current gain");
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parameter real IBR = 1.0f from [0.0:inf)
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parameter real IBR = 1.0f from [0.0:inf)
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`ATTR(info="Saturation current of the non-ideal reverse base current");
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`ATTR(desc="Saturation current of the non-ideal reverse base current");
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parameter real VLR = 0.2
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parameter real VLR = 0.2
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`ATTR(info="Cross-over voltage of the non-ideal reverse base current");
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`ATTR(desc="Cross-over voltage of the non-ideal reverse base current");
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parameter real XEXT = 0.63 from [0.0:1.0]
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parameter real XEXT = 0.63 from [0.0:1.0]
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`ATTR(info="Part of currents and charges that belong to extrinsic region");
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`ATTR(desc="Part of currents and charges that belong to extrinsic region");
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parameter real WAVL = 1.1u from [1.0n:inf)
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parameter real WAVL = 1.1u from [1.0n:inf)
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`ATTR(info="Epilayer thickness used in weak-avalanche model");
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`ATTR(desc="Epilayer thickness used in weak-avalanche model");
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parameter real VAVL = 3.0 from [0.01:inf)
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parameter real VAVL = 3.0 from [0.01:inf)
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`ATTR(info="Voltage determining curvature of avalanche current");
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`ATTR(desc="Voltage determining curvature of avalanche current");
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parameter real SFH = 0.3 from [0.0:inf)
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parameter real SFH = 0.3 from [0.0:inf)
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`ATTR(info="Current spreading factor of avalanche model when EXAVL=1");
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`ATTR(desc="Current spreading factor of avalanche model when EXAVL=1");
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// RvdT, 22-02-2008: for MXT 504.7
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// RvdT, 22-02-2008: for MXT 504.7
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// increased lower clipping values RE, RBC, RBV, RCC, RCV, SCRCV
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// increased lower clipping values RE, RBC, RBV, RCC, RCV, SCRCV
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// from 1u to 1m:
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// from 1u to 1m:
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parameter real RE = 5.0 from [1.0m:inf)
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parameter real RE = 5.0 from [1.0m:inf)
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`ATTR(info="Emitter resistance");
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`ATTR(desc="Emitter resistance");
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parameter real RBC = 23.0 from [1.0m:inf)
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parameter real RBC = 23.0 from [1.0m:inf)
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`ATTR(info="Constant part of the base resistance");
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`ATTR(desc="Constant part of the base resistance");
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parameter real RBV = 18.0 from [1.0m:inf)
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parameter real RBV = 18.0 from [1.0m:inf)
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`ATTR(info="Zero-bias value of the variable part of the base resistance");
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`ATTR(desc="Zero-bias value of the variable part of the base resistance");
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parameter real RCC = 12.0 from [1.0m:inf)
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parameter real RCC = 12.0 from [1.0m:inf)
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`ATTR(info="Constant part of the collector resistance");
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`ATTR(desc="Constant part of the collector resistance");
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parameter real RCV = 150.0 from [1.0m:inf)
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parameter real RCV = 150.0 from [1.0m:inf)
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`ATTR(info="Resistance of the un-modulated epilayer");
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`ATTR(desc="Resistance of the un-modulated epilayer");
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parameter real SCRCV = 1250.0 from [1.0m:inf)
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parameter real SCRCV = 1250.0 from [1.0m:inf)
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`ATTR(info="Space charge resistance of the epilayer");
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`ATTR(desc="Space charge resistance of the epilayer");
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parameter real IHC = 4.0m from [1.0p:inf)
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parameter real IHC = 4.0m from [1.0p:inf)
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`ATTR(info="Critical current for velocity saturation in the epilayer");
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`ATTR(desc="Critical current for velocity saturation in the epilayer");
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parameter real AXI = 0.3 from [0.02:inf)
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parameter real AXI = 0.3 from [0.02:inf)
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`ATTR(info="Smoothness parameter for the onset of quasi-saturation");
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`ATTR(desc="Smoothness parameter for the onset of quasi-saturation");
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parameter real CJE = 73.0f from [0.0:inf)
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parameter real CJE = 73.0f from [0.0:inf)
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`ATTR(info="Zero-bias emitter-base depletion capacitance");
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`ATTR(desc="Zero-bias emitter-base depletion capacitance");
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parameter real VDE = 0.95 from [0.05:inf)
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parameter real VDE = 0.95 from [0.05:inf)
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`ATTR(info="Emitter-base diffusion voltage");
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`ATTR(desc="Emitter-base diffusion voltage");
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parameter real PE = 0.4 from [0.01:0.99)
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parameter real PE = 0.4 from [0.01:0.99)
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`ATTR(info="Emitter-base grading coefficient");
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`ATTR(desc="Emitter-base grading coefficient");
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parameter real XCJE = 0.4 from [0.0:1.0]
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parameter real XCJE = 0.4 from [0.0:1.0]
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`ATTR(info="Sidewall fraction of the emitter-base depletion capacitance");
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`ATTR(desc="Sidewall fraction of the emitter-base depletion capacitance");
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parameter real CBEO = 0.0 from [0.0:inf)
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parameter real CBEO = 0.0 from [0.0:inf)
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`ATTR(info="Emitter-base overlap capacitance");
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`ATTR(desc="Emitter-base overlap capacitance");
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parameter real CJC = 78.0f from [0.0:inf)
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parameter real CJC = 78.0f from [0.0:inf)
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`ATTR(info="Zero-bias collector-base depletion capacitance");
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`ATTR(desc="Zero-bias collector-base depletion capacitance");
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parameter real VDC = 0.68 from [0.05:inf)
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parameter real VDC = 0.68 from [0.05:inf)
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`ATTR(info="Collector-base diffusion voltage");
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`ATTR(desc="Collector-base diffusion voltage");
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parameter real PC = 0.5 from [0.01:0.99)
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parameter real PC = 0.5 from [0.01:0.99)
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`ATTR(info="Collector-base grading coefficient");
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`ATTR(desc="Collector-base grading coefficient");
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parameter real XP = 0.35 from [0.0:0.99)
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parameter real XP = 0.35 from [0.0:0.99)
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`ATTR(info="Constant part of Cjc");
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`ATTR(desc="Constant part of Cjc");
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parameter real MC = 0.5 from [0.0:1.0)
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parameter real MC = 0.5 from [0.0:1.0)
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`ATTR(info="Coefficient for current modulation of CB depletion capacitance");
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`ATTR(desc="Coefficient for current modulation of CB depletion capacitance");
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parameter real XCJC = 32.0m from [0.0:1.0]
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parameter real XCJC = 32.0m from [0.0:1.0]
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`ATTR(info="Fraction of CB depletion capacitance under the emitter");
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`ATTR(desc="Fraction of CB depletion capacitance under the emitter");
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// RvdT, 30-11-2007: introduced RCBLX and RCBLI:
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// RvdT, 30-11-2007: introduced RCBLX and RCBLI:
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parameter real RCBLX = 0.0 from [0.0:inf)
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parameter real RCBLX = 0.0 from [0.0:inf)
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`ATTR(info="Resistance Collector Buried Layer eXtrinsic");
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`ATTR(desc="Resistance Collector Buried Layer eXtrinsic");
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parameter real RCBLI = 0.0 from [0.0:inf)
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parameter real RCBLI = 0.0 from [0.0:inf)
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`ATTR(info="Resistance Collector Buried Layer Intrinsic");
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`ATTR(desc="Resistance Collector Buried Layer Intrinsic");
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parameter real CBCO = 0.0 from [0.0:inf)
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parameter real CBCO = 0.0 from [0.0:inf)
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`ATTR(info="Collector-base overlap capacitance");
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`ATTR(desc="Collector-base overlap capacitance");
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parameter real MTAU = 1.0 from [0.1:inf)
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parameter real MTAU = 1.0 from [0.1:inf)
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`ATTR(info="Non-ideality factor of the emitter stored charge");
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`ATTR(desc="Non-ideality factor of the emitter stored charge");
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parameter real TAUE = 2.0p from [0.0:inf)
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parameter real TAUE = 2.0p from [0.0:inf)
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`ATTR(info="Minimum transit time of stored emitter charge");
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`ATTR(desc="Minimum transit time of stored emitter charge");
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parameter real TAUB = 4.2p from (0.0:inf)
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parameter real TAUB = 4.2p from (0.0:inf)
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`ATTR(info="Transit time of stored base sharge");
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`ATTR(desc="Transit time of stored base sharge");
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parameter real TEPI = 41.0p from [0.0:inf)
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parameter real TEPI = 41.0p from [0.0:inf)
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`ATTR(info="Transit time of stored epilayer charge");
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`ATTR(desc="Transit time of stored epilayer charge");
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parameter real TAUR = 520.0p from [0.0:inf)
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parameter real TAUR = 520.0p from [0.0:inf)
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`ATTR(info="Transit time of reverse extrinsic stored base charge");
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`ATTR(desc="Transit time of reverse extrinsic stored base charge");
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parameter real DEG = 0.0
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parameter real DEG = 0.0
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`ATTR(info="Bandgap difference over the base");
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`ATTR(desc="Bandgap difference over the base");
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parameter real XREC = 0.0 from [0.0:inf)
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parameter real XREC = 0.0 from [0.0:inf)
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`ATTR(info="Pre-factor of the recombination part of Ib1");
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`ATTR(desc="Pre-factor of the recombination part of Ib1");
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parameter real AQBO = 0.3
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parameter real AQBO = 0.3
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`ATTR(info="Temperature coefficient of the zero-bias base charge");
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`ATTR(desc="Temperature coefficient of the zero-bias base charge");
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parameter real AE = 0.0
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parameter real AE = 0.0
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`ATTR(info="Temperature coefficient of the resistivity of the emitter");
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`ATTR(desc="Temperature coefficient of the resistivity of the emitter");
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parameter real AB = 1.0
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parameter real AB = 1.0
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`ATTR(info="Temperature coefficient of the resistivity of the base");
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`ATTR(desc="Temperature coefficient of the resistivity of the base");
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parameter real AEPI = 2.5
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parameter real AEPI = 2.5
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`ATTR(info="Temperature coefficient of the resistivity of the epilayer");
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`ATTR(desc="Temperature coefficient of the resistivity of the epilayer");
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parameter real AEX = 0.62
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parameter real AEX = 0.62
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`ATTR(info="Temperature coefficient of the resistivity of the extrinsic base");
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`ATTR(desc="Temperature coefficient of the resistivity of the extrinsic base");
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parameter real AC = 2.0
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parameter real AC = 2.0
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`ATTR(info="Temperature coefficient of the resistivity of the collector contact");
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`ATTR(desc="Temperature coefficient of the resistivity of the collector contact");
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// RvdT, 30-01-2007: introduced ACBL
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// RvdT, 30-01-2007: introduced ACBL
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parameter real ACBL = 2.0 from [0.0:inf)
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parameter real ACBL = 2.0 from [0.0:inf)
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`ATTR(info="Temperature coefficient of the resistivity of the collector buried layer");
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`ATTR(desc="Temperature coefficient of the resistivity of the collector buried layer");
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parameter real DVGBF = 50.0m
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parameter real DVGBF = 50.0m
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`ATTR(info="Band-gap voltage difference of the forward current gain");
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`ATTR(desc="Band-gap voltage difference of the forward current gain");
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parameter real DVGBR = 45.0m
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parameter real DVGBR = 45.0m
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`ATTR(info="Band-gap voltage difference of the reverse current gain");
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`ATTR(desc="Band-gap voltage difference of the reverse current gain");
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parameter real VGB = 1.17 from [0.1:inf)
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parameter real VGB = 1.17 from [0.1:inf)
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`ATTR(info="Band-gap voltage of the base");
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`ATTR(desc="Band-gap voltage of the base");
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parameter real VGC = 1.18 from [0.1:inf)
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parameter real VGC = 1.18 from [0.1:inf)
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`ATTR(info="Band-gap voltage of the collector");
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`ATTR(desc="Band-gap voltage of the collector");
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parameter real VGJ = 1.15 from [0.1:inf)
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parameter real VGJ = 1.15 from [0.1:inf)
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`ATTR(info="Band-gap voltage recombination emitter-base junction");
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`ATTR(desc="Band-gap voltage recombination emitter-base junction");
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parameter real VGZEB = 1.15 from [0.1:inf)
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parameter real VGZEB = 1.15 from [0.1:inf)
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`ATTR(info="Band-gap voltage at Tref of Zener effect emitter-base junction");
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`ATTR(desc="Band-gap voltage at Tref of Zener effect emitter-base junction");
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parameter real AVGEB = 4.73e-4 from (-inf:inf)
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parameter real AVGEB = 4.73e-4 from (-inf:inf)
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`ATTR(info="Temperature coefficient band-gap voltage for Zener effect emitter-base junction");
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`ATTR(desc="Temperature coefficient band-gap voltage for Zener effect emitter-base junction");
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parameter real TVGEB = 636.0 from [0.0:inf)
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parameter real TVGEB = 636.0 from [0.0:inf)
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`ATTR(info="Temperature coefficient band-gap voltage for Zener effect emitter-base junction");
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`ATTR(desc="Temperature coefficient band-gap voltage for Zener effect emitter-base junction");
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parameter real DVGTE = 0.05
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parameter real DVGTE = 0.05
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`ATTR(info="Band-gap voltage difference of emitter stored charge");
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`ATTR(desc="Band-gap voltage difference of emitter stored charge");
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parameter real DAIS = 0.0
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parameter real DAIS = 0.0
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`ATTR(info="Fine tuning of temperature dependence of C-E saturation current");
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`ATTR(desc="Fine tuning of temperature dependence of C-E saturation current");
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parameter real AF = 2.0 from [0.01:inf)
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parameter real AF = 2.0 from [0.01:inf)
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`ATTR(info="Exponent of the Flicker-noise");
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`ATTR(desc="Exponent of the Flicker-noise");
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parameter real KF = 20.0p from [0.0:inf)
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parameter real KF = 20.0p from [0.0:inf)
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`ATTR(info="Flicker-noise coefficient of the ideal base current");
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`ATTR(desc="Flicker-noise coefficient of the ideal base current");
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parameter real KFN = 20.0p from [0.0:inf)
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parameter real KFN = 20.0p from [0.0:inf)
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`ATTR(info="Flicker-noise coefficient of the non-ideal base current");
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`ATTR(desc="Flicker-noise coefficient of the non-ideal base current");
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parameter integer KAVL = 0 from [0:1]
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parameter integer KAVL = 0 from [0:1]
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`ATTR(info="Switch for white noise contribution due to avalanche");
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`ATTR(desc="Switch for white noise contribution due to avalanche");
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`ifdef SUBSTRATE
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`ifdef SUBSTRATE
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parameter real ISS = 48.0a from [0.0:inf)
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parameter real ISS = 48.0a from [0.0:inf)
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`ATTR(info="Base-substrate saturation current");
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`ATTR(desc="Base-substrate saturation current");
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parameter real ICSS = -1.0 from (-inf:inf)
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parameter real ICSS = -1.0 from (-inf:inf)
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`ATTR(info="Collector-substrate ideal saturation current");
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`ATTR(desc="Collector-substrate ideal saturation current");
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parameter real IKS = 250.0u from [1.0p:inf)
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parameter real IKS = 250.0u from [1.0p:inf)
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`ATTR(info="Base-substrate high injection knee current");
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`ATTR(desc="Base-substrate high injection knee current");
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||||||
parameter real CJS = 315.0f from [0:inf)
|
parameter real CJS = 315.0f from [0:inf)
|
||||||
`ATTR(info="Zero-bias collector-substrate depletion capacitance");
|
`ATTR(desc="Zero-bias collector-substrate depletion capacitance");
|
||||||
parameter real VDS = 0.62 from (0.05:inf)
|
parameter real VDS = 0.62 from (0.05:inf)
|
||||||
`ATTR(info="Collector-substrate diffusion voltage");
|
`ATTR(desc="Collector-substrate diffusion voltage");
|
||||||
parameter real PS = 0.34 from (0.01:0.99)
|
parameter real PS = 0.34 from (0.01:0.99)
|
||||||
`ATTR(info="Collector-substrate grading coefficient");
|
`ATTR(desc="Collector-substrate grading coefficient");
|
||||||
parameter real VGS = 1.20 from [0.1:inf)
|
parameter real VGS = 1.20 from [0.1:inf)
|
||||||
`ATTR(info="band-gap voltage of the substrate");
|
`ATTR(desc="band-gap voltage of the substrate");
|
||||||
parameter real AS = 1.58
|
parameter real AS = 1.58
|
||||||
`ATTR(info="Substrate temperature coefficient");
|
`ATTR(desc="Substrate temperature coefficient");
|
||||||
parameter real ASUB = 2.0
|
parameter real ASUB = 2.0
|
||||||
`ATTR(info="Temperature coefficient for mobility of minorities in the substrate");
|
`ATTR(desc="Temperature coefficient for mobility of minorities in the substrate");
|
||||||
`endif
|
`endif
|
||||||
|
|
||||||
`ifdef SELFHEATING
|
`ifdef SELFHEATING
|
||||||
parameter real RTH = 300.0 from (0.0:inf)
|
parameter real RTH = 300.0 from (0.0:inf)
|
||||||
`ATTR(info="Thermal resistance");
|
`ATTR(desc="Thermal resistance");
|
||||||
parameter real CTH = 3.0n from [0.0:inf)
|
parameter real CTH = 3.0n from [0.0:inf)
|
||||||
`ATTR(info="Thermal capacitance");
|
`ATTR(desc="Thermal capacitance");
|
||||||
parameter real ATH = 0.0
|
parameter real ATH = 0.0
|
||||||
`ATTR(info="Temperature coefficient of the thermal resistance");
|
`ATTR(desc="Temperature coefficient of the thermal resistance");
|
||||||
`endif
|
`endif
|
||||||
|
|
||||||
parameter real MULT = 1.0 from (0.0:inf)
|
parameter real MULT = 1.0 from (0.0:inf)
|
||||||
`ATTR(info="Multiplication factor");
|
`ATTR(desc="Multiplication factor");
|
||||||
|
|
||||||
// Non-standard (additional) model parameters
|
// Non-standard (additional) model parameters
|
||||||
// (introduced for the users' convenience)
|
// (introduced for the users' convenience)
|
||||||
|
|
||||||
`ifdef insideADMS
|
`ifdef insideADMS
|
||||||
parameter integer TYPE = 1 from [-1:1]
|
parameter integer TYPE = 1 from [-1:1]
|
||||||
`ATTR(info="Flag for NPN (1) or PNP (-1) transistor type");
|
`ATTR(desc="Flag for NPN (1) or PNP (-1) transistor type");
|
||||||
`else
|
`else
|
||||||
parameter integer TYPE = 1 from [-1:1] exclude 0;
|
parameter integer TYPE = 1 from [-1:1] exclude 0;
|
||||||
`endif
|
`endif
|
||||||
parameter real GMIN = 1.0e-13 from (0:1e-10]
|
parameter real GMIN = 1.0e-13 from (0:1e-10]
|
||||||
`ATTR(info="Minimum conductance");
|
`ATTR(desc="Minimum conductance");
|
||||||
|
|
||||||
|
|||||||
Reference in New Issue
Block a user