VDMOS added
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12
DEVICES
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DEVICES
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@ -54,6 +54,7 @@ Table of contents
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11.12 BSIM4 - BSIM model level 4
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11.12 BSIM4 - BSIM model level 4
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11.13 HiSIM2 - Hiroshima-University STARC IGFET Model
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11.13 HiSIM2 - Hiroshima-University STARC IGFET Model
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11.14 HiSIM_HV - Hiroshima-University STARC IGFET High Voltage Model
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11.14 HiSIM_HV - Hiroshima-University STARC IGFET High Voltage Model
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11.15 VDMOS - A simple PowerMOS transistor model derived from MOS1
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12. SOI devices
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12. SOI devices
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12.1 BSIM3SOI_FD - SOI model (fully depleted devices)
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12.1 BSIM3SOI_FD - SOI model (fully depleted devices)
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12.2 BSIM3SOI_DD - SOI Model (dynamic depletion model)
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12.2 BSIM3SOI_DD - SOI Model (dynamic depletion model)
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@ -718,6 +719,17 @@ will be updated every time the device specific code is altered or changed to ref
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Web site: http://home.hiroshima-u.ac.jp/usdl/HiSIM.html
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Web site: http://home.hiroshima-u.ac.jp/usdl/HiSIM.html
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11.15 VDMOS - Simple PowerMOS model
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Ver: 1
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Class: M
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Level: -
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Dir: devices/vdmos
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Status: TO BE TESTED.
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This is a simplified Power MOS model, derived from MOS1 and
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diode, similar to LTSPICE and SuperSpice VDMOS
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12. SOI devices
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12. SOI devices
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12.1 BSIM3SOI_FD - SOI model (fully depleted devices)
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12.1 BSIM3SOI_FD - SOI model (fully depleted devices)
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