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rm independent terms from ddx() operator

This commit is contained in:
dwarning 2021-01-04 18:56:21 +01:00 committed by Holger Vogt
parent 43e9a8f594
commit b654296230
1 changed files with 10 additions and 9 deletions
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19
src/spicelib/devices/adms/mextram/admsva/opinfo.inc
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@ -105,7 +105,7 @@ begin
OP_gz = - ddx(In, V(c1)); // Reverse transconductance
OP_sgpi = - ddx(Ib1_s, V(e))
OP_sgpi =
- ddx(Ib1_s, V(e1)); // Conductance sidewal b-e junction
OP_gpix = - ddx(Ib1+Ib2, V(e1)); // Conductance floor b-e junction
@ -117,7 +117,7 @@ begin
OP_gmuz = ddx( Iavl, V(c1)); // Conductance of avalanche current
// Conductance extrinsic b-c current :
OP_gmuex = ddx(Iex+Ib3, V(e))
OP_gmuex =
+ ddx(Iex+Ib3, V(b1))
+ ddx(Iex+Ib3, V(b2))
+ ddx(Iex+Ib3, V(e1))
@ -128,9 +128,10 @@ begin
OP_grcvy = - ddx(Ic1c2, V(c2)); // Conductance of epilayer current
OP_grcvz = - ddx(Ic1c2, V(c1)); // Conductance of epilayer current
// OP_rbv = 1.0 / (- ddx(Ib1b2, V(b2)) - ddx(Ib1b2, V(c2))); // Base resistance
// OP_rbv = 1.0 / (- ddx(Ib1b2, V(b2)) - ddx(Ib1b2, V(c2))); // Base resistance
OP_rbv = Rb2; // FIXME: Base resistance - very, very raw
OP_grbvx = - ddx(Ib1b2, V(e)) - ddx(Ib1b2, V(e1)); // Early effect on base resistance
OP_grbvx = - ddx(Ib1b2, V(e1)); // Early effect on base resistance
OP_grbvy = - ddx(Ib1b2, V(c2)); // Early effect on base resistance
OP_grbvz = - ddx(Ib1b2, V(c1)); // Early effect on base resistance
@ -143,7 +144,7 @@ begin
`ifdef SUBSTRATE
OP_gs = ddx(Isub, V(b)) + ddx(Isub, V(b1)); // Conductance parasitic PNP transitor
OP_gs = ddx(Isub, V(b1)); // Conductance parasitic PNP transitor
OP_xgs = ddx(XIsub, V(b)) ; // Conductance parasitic PNP transistor
OP_gsf = ddx(Isf, V(s)) ; // Conductance substrate-collector current
`endif
@ -151,7 +152,7 @@ begin
// Small signal equivalent circuit capacitances
OP_scbe = - ddx(Qte_s, V(e)) - ddx(Qte_s, V(e1)); // Capacitance sidewall b-e junction
OP_scbe = - ddx(Qte_s, V(e1)); // Capacitance sidewall b-e junction
OP_cbex = - ddx(Qte + Qbe + Qe, V(e1)) ; // Capacitance floor b-e junction
@ -159,14 +160,14 @@ begin
OP_cbez = - ddx(Qbe, V(c1)); // Early effect on b-e diffusion junction
OP_cbcx = - ddx(Qbc, V(e)) - ddx(Qbc, V(e1)); // Early effect on b-c diffusion junction
OP_cbcx = - ddx(Qbc, V(e1)); // Early effect on b-c diffusion junction
OP_cbcy = - ddx(Qtc + Qbc + Qepi, V(c2)); // Capacitance floor b-c junction
OP_cbcz = - ddx(Qtc + Qbc + Qepi, V(c1)); // Capacitance floor b-c junction
// Capacitance extrinsic b-c junction :
OP_cbcex = ddx(Qtex + Qex,V(e))
OP_cbcex =
+ ddx(Qtex + Qex,V(b1 ))
+ ddx(Qtex + Qex,V(b2))
+ ddx(Qtex + Qex,V(e1))
@ -177,7 +178,7 @@ begin
OP_cb1b2 = - ddx(Qb1b2, V(b2)) - ddx(Qb1b2, V(c2)); // Capacitance AC current crowding
OP_cb1b2x = - ddx(Qb1b2, V(e)) - ddx(Qb1b2, V(e1)); // Cross-capacitance AC current crowding
OP_cb1b2x = - ddx(Qb1b2, V(e1)); // Cross-capacitance AC current crowding
OP_cb1b2y = - ddx(Qb1b2, V(c2)); // Cross-capacitance AC current crowding
OP_cb1b2z = - ddx(Qb1b2, V(c1)) ; // Cross-capacitance AC current crowding