Make example more consitent, better viewable
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@ -1,29 +1,26 @@
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* Simple SRAM cell in a subcircuit, double exponential current pulses
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* control volate
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* IHP Open PDK
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* simple SRAM cell, exponential current pulses
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* Path to the PDK
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*.include "D:\Spice_general\skywater-pdk\libraries\sky130_fd_pr\latest\models\corners/tt.spice"
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.lib "D:\Spice_general\IHP-Open-PDK\ihp-sg13g2\libs.tech\ngspice\models\cornerMOSlv.lib" mos_tt
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*.include lib_out1.lib
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.param vdd = 1.2
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.param deltat=11n deltat2=27n
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.param deltat=11n deltat2=25n
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.param tochar = 1e-13
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.param talpha = 500p tbeta=10p
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.param talpha = 500p tbeta=20p
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.param Inull = 'tochar/(talpha-tbeta)'
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* the voltage sources:
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Vdd vd gnd DC 'vdd'
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Vwl wl 0 0 PULSE 0 'vdd' 45n 1n 1n 7n 1
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Vwl wl 0 0 PULSE 0 'vdd' 50n 1n 1n 7n 1
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Vbl bl 0 'vdd'
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Vbln bln 0 0
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Vctrl ctrl 0 pulse (0 1 10n 1n 1n 1 1)
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*V1 in gnd pulse(0 'vdd' 0p 200p 100p 5n 10n)
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* Eponential current source with control input
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* Exponential current source with control input
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aseegen1 ctrl [%id(n1 m1) %id(n2 m2) %id(n1 m1) %id(n2 m2)] seemod1
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.model seemod1 seegen (tdelay = 8n tperiod=20n)
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.model seemod1 seegen (tdelay = 8n tperiod=25n)
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Xnot1 n1 vdd vss n2 not1
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Xnot2 n2 vdd vss n1 not1
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@ -46,11 +43,12 @@ c2 z vss 0.576f
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.ic v(n2)=0 v(n1)='vdd'
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* simulation command:
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.tran 100ps 100ns ; 0 10p
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.tran 100ps 120ns
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.options method=gear
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.control
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pre_osdi C:\Spice64\lib\ngspice\psp103_nqs.osdi
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run
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rusage
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*set nolegend
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