Update to release version 504.7 now with selfheating
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dwarning
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1f42dc1ffc
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// Evaluate the operating point (outout) variables
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begin
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`ifdef __VAMS_COMPACT_MODELING__
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// The external currents and the current gain
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OP_ic = I(<c>); // External DC collector current
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OP_ib = I(<b>); // External DC base Current
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OP_betadc = OP_ic / OP_ib; // External DC Current gain
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// The internal voltage differences
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OP_vb2e1 = Vb2e1; // Internal base-emiter bias
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OP_vb2c2 = Vb2c2; // Internal base-emiter bias
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OP_vb2c1 = Vb2c1; // Internal base-collector bias including epilayer
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OP_vb1c1 = Vb1b2 + Vb2c1; // External base-collector bias without contact resistances
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OP_vc4c1 = Vc4c1; // Bias over intrinsic buried layer
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OP_vc3c4 = Vc3c4; // Bias over extrinsic buried layer
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OP_ve1e = - Vee1; // Bias over emiter resistance
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// The branch currents
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OP_in = In; // Main current
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OP_ic1c2 = Ic1c2; // Epilayer current
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OP_ib1b2 = Ib1b2; // Pinched-base current
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OP_ib1 = Ib1; // Ideal forward base current
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OP_sib1 = Ib1_s; // Ideal side-wall base current
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OP_ib2 = Ib2; // Non-ideal forward base current
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OP_ib3 = Ib3; // Non-ideal reverse base current
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OP_iavl = Iavl; // Avalanche current
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OP_iex = Iex; // Extrinsic reverse base current
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OP_xiex = XIex; // Extrinsic reverse base current
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`ifdef SUBSTRATE
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OP_isub = Isub; // Substrate current
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OP_xisub = XIsub; // Substrate current
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OP_isf = Isf; // Substrate failure current
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`endif
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OP_ire = - Vee1 / RE_TM; // Current through emiter resistance
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OP_irbc = Vbb1 / RBC_TM; // Current through constant base resistance
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OP_ircc = Vcc3 * GCCxx_TM; // Current through collector contact resistance
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OP_ircblx = Vc3c4 * GCCex_TM; // Current through extrinsic buried layer resistance
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OP_ircbli = Vc4c1 * GCCin_TM; // Current through extrinsic buried layer resistance
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// The branch charges
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OP_qe = Qe; // Emitter charge or emitter neutral charge
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OP_qte = Qte; // Base-emiter depletion charge
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OP_sqte = Qte_s; // Sidewall base-emiter depletion charge
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OP_qbe = Qbe; // Base-emiter diffusion charge
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OP_qbc = Qbc; // Base-collector diffusion charge
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OP_qtc = Qtc; // Base-colector depletion charge
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OP_qepi = Qepi; // Epilayer diffusion charge
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OP_qb1b2 = Qb1b2; // AC current crowding charge
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OP_qtex = Qtex; // Extrinsic base-collector depletion charge
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OP_xqtex = XQtex; // Extrinsic base-collector depletion charge
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OP_qex = Qex; // Extrinsic base-collector diffusion charge
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OP_xqex = XQex; // Extrinsic base-collector diffusion charge
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`ifdef SUBSTRATE
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OP_qts = Qts; // Collector substrate depletion charge
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`endif
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// Small signal equivalent circuit conductances and resistances
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OP_gx = - ddx(In, V(e1)); // Forward transconductance
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OP_gy = - ddx(In, V(c2)); // Reverse transconductance
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OP_gz = - ddx(In, V(c1)); // Reverse transconductance
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OP_sgpi = - ddx(Ib1_s, V(e))
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- ddx(Ib1_s, V(e1)); // Conductance sidewal b-e junction
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OP_gpix = - ddx(Ib1+Ib2, V(e1)); // Conductance floor b-e junction
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OP_gpiy = - ddx(Ib1, V(c2)); // Early effect on recombination base current
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OP_gpiz = - ddx(Ib1, V(c1)); // Early effect on recombination base current
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OP_gmux = ddx( Iavl, V(e1)); // Early effect on avalanche current limitting
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OP_gmuy = ddx( Iavl, V(c2)); // Conductance of avalanche current
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OP_gmuz = - ddx(- Iavl, V(c1)); // Conductance of avalanche current
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// Conductance extrinsic b-c current :
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OP_gmuex = ddx(Iex+Ib3, V(e))
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+ ddx(Iex+Ib3, V(b1))
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+ ddx(Iex+Ib3, V(b2))
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+ ddx(Iex+Ib3, V(e1))
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+ ddx(Iex+Ib3, V(c2));
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OP_xgmuex = ddx(XIex, V(b)) ; // Conductance extrinsic b-c current
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OP_grcvy = - ddx(Ic1c2, V(c2)); // Conductance of epilayer current
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OP_grcvz = - ddx(Ic1c2, V(c1)); // Conductance of epilayer current
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OP_rbv = 1.0 / (- ddx(Ib1b2, V(b2)) - ddx(Ib1b2, V(c2))); // Base resistance
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OP_grbvx = - ddx(Ib1b2, V(e)) - ddx(Ib1b2, V(e1)); // Early effect on base resistance
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OP_grbvy = - ddx(Ib1b2, V(c2)); // Early effect on base resistance
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OP_grbvz = - ddx(Ib1b2, V(c1)); // Early effect on base resistance
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OP_re = RE_TM; // Emiter resistance
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OP_rbc = RBC_TM; // Constant base resistance
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OP_rcc = RCCxx_TM; // Collector Contact resistance
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OP_rcblx = RCCex_TM; // Extrinsic buried layer resistance
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OP_rcbli = RCCin_TM; // Extrinsic buried layer resistance
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`ifdef SUBSTRATE
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OP_gs = ddx(Isub, V(b)) + ddx(Isub, V(b1)); // Conductance parasitic PNP transitor
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OP_xgs = ddx(XIsub, V(b)) ; // Conductance parasitic PNP transistor
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OP_gsf = ddx(Isf, V(s)) ; // Conductance substrate failure current
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`endif
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// Small signal equivalent circuit capacitances
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OP_scbe = - ddx(Qte_s, V(e)) - ddx(Qte_s, V(e1)); // Capacitance sidewall b-e junction
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OP_cbex = - ddx(Qte + Qbe + Qe, V(e1)) ; // Capacitance floor b-e junction
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OP_cbey = - ddx(Qbe, V(c2)); // Early effect on b-e diffusion junction
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OP_cbez = - ddx(Qbe, V(c1)); // Early effect on b-e diffusion junction
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OP_cbcx = - ddx(Qbc, V(e)) - ddx(Qbc, V(e1)); // Early effect on b-c diffusion junction
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OP_cbcy = - ddx(Qtc + Qbc + Qepi, V(c2)); // Capacitance floor b-c junction
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OP_cbcz = - ddx(Qtc + Qbc + Qepi, V(c1)); // Capacitance floor b-c junction
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// Capacitance extrinsic b-c junction :
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OP_cbcex = ddx(Qtex + Qex,V(e))
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+ ddx(Qtex + Qex,V(b1 ))
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+ ddx(Qtex + Qex,V(b2))
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+ ddx(Qtex + Qex,V(e1))
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+ ddx(Qtex + Qex,V(c2)) ;
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// Capacitance extrinsic b-c junction :
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OP_xcbcex = ddx(XQtex + XQex, V(b)) ;
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OP_cb1b2 = - ddx(Qb1b2, V(b2)) - ddx(Qb1b2, V(c2)); // Capacitance AC current crowding
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OP_cb1b2x = - ddx(Qb1b2, V(e)) - ddx(Qb1b2, V(e1)); // Cross-capacitance AC current crowding
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OP_cb1b2y = - ddx(Qb1b2, V(c2)); // Cross-capacitance AC current crowding
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OP_cb1b2z = - ddx(Qb1b2, V(c1)) ; // Cross-capacitance AC current crowding
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`ifdef SUBSTRATE
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OP_cts = ddx(Qts, V(s)) ; // Capacitance s-c junction
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`endif
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// Approximate small signal equivalent circuit
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dydx = (OP_gx - OP_gmux) / (OP_grcvy + OP_gmuy - OP_gy);
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dydz = (OP_gz - OP_grcvz - OP_gmuz) / (OP_grcvy + OP_gmuy - OP_gy);
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gpi = OP_sgpi + OP_gpix + OP_gmux + OP_gpiz + OP_gmuz +
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(OP_gpiy + OP_gmuy) * (dydx + dydz);
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OP_gm = (OP_grcvy * (OP_gx - OP_gmux + // Transconductance
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OP_gz - OP_gmuz) - OP_grcvz *
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(OP_gy - OP_gmuy)) / (OP_grcvy + OP_gmuy - OP_gy);
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OP_beta = OP_gm / gpi; // Current amplification
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OP_gout = ((OP_gy - OP_gmuy) * OP_grcvz - // Output conductance
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(OP_gz - OP_gmuz) * OP_grcvy) /
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(OP_grcvy + OP_gmuy - OP_gy);
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OP_gmu = OP_gpiz + OP_gmuz + (OP_gpiy + OP_gmuy) * dydz + // Feedback transconductance
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OP_gmuex + OP_xgmuex;
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OP_rb = RBC_TM + OP_rbv; // Base resistance
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OP_rc = OP_rcc + OP_rcblx + OP_rcbli; // Collector resistance
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OP_cbe = OP_cbex + OP_scbe + OP_cbcx + // Base-emitter capacitance
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(OP_cbey + OP_cbcy) * dydx + CBEO_M;
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OP_cbc = (OP_cbey + OP_cbcy) * dydz + OP_cbcz + // Base-collector capacitance
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OP_cbcex + OP_xcbcex + CBCO_M;
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// Quantities to describe internal state of the model
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gammax = (OP_gpix + OP_gmux - OP_grbvx) * OP_rbv;
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gammay = (OP_gpiy + OP_gmuy - OP_grbvy) * OP_rbv;
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gammaz = (OP_gpiz + OP_gmuz - OP_grbvz) * OP_rbv;
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gbfx = OP_gpix + OP_sgpi * (1.0 + gammax);
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gbfy = OP_gpiy + OP_sgpi * gammay;
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gbfz = OP_gpiz + OP_sgpi * gammaz;
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// RvdT March 2008:
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alpha_ft = (1.0 + (OP_grcvy * dydx * OP_rc) +
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(OP_gx + gbfx + (OP_gy + gbfy) * dydx) * RE_TM)/
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(1.0 - (OP_grcvz + OP_grcvy * dydz) * OP_rc -
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(OP_gz + gbfz + (OP_gy + gbfy) * dydz) * RE_TM);
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rx = pow((OP_grcvy * dydx + alpha_ft * (OP_grcvz + OP_grcvy * dydz)), -1);
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rz = alpha_ft * rx;
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ry = (1.0 - OP_grcvz * rz) / OP_grcvy;
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rb1b2 = gammax * rx + gammay * ry + gammaz * rz;
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rex = rz + rb1b2 - OP_rcbli;
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xrex = rex + RBC_TM * ((gbfx + OP_gmux) * rx + (gbfy + OP_gmuy) * ry +
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(gbfz + OP_gmuz) * rz) - OP_rcbli - OP_rcblx;
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taut = OP_scbe * (rx + rb1b2) + (OP_cbex + OP_cbcx) * rx + (OP_cbey + OP_cbcy) *
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ry + (OP_cbez + OP_cbcz) * rz + OP_cbcex * rex + OP_xcbcex * xrex +
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(CBEO_M + CBCO_M) * (xrex - RCCxx_TM);
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OP_ft = 1.0 / (2.0 * `PI * taut); // Good approximation for cut-off frequency
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OP_iqs = Iqs; // Current at onset of quasi-saturation
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OP_xiwepi = xi_w; // Thickness of injection layer
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OP_vb2c2star = Vb2c2star; // Physical value of internal base-collector bias
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//self-heating
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`ifdef SELFHEATING
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OP_pdiss = power; // Dissipation
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`endif
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OP_tk = Tk; // Actual temperature
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`endif
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end
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@ -0,0 +1,123 @@
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//
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// Operation point (output) variables
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//
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// The external currents and current gain
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`OPP(OP_ic, A, External DC collector current)
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`OPP(OP_ib, A, External DC base current)
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`OPP(OP_betadc, , External DC current gain Ic/Ib)
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// The internal biases
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`OPP(OP_vb2e1, V, Internal base-emitter bias)
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`OPP(OP_vb2c2, V, Internal base-collector bias)
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`OPP(OP_vb2c1, V, Internal base-collector bias including epilayer)
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`OPP(OP_vb1c1, V, External base-collector bias without contact resistances)
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`OPP(OP_vc4c1, V, Bias over intrinsic buried layer)
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`OPP(OP_vc3c4, V, Bias over extrinsic buried layer)
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`OPP(OP_ve1e, V, Bias over emitter resistance)
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// The actual currents
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`OPP(OP_in, A, Main current)
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`OPP(OP_ic1c2, A, Epilayer current)
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`OPP(OP_ib1b2, A, Pinched-base current)
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`OPP(OP_ib1, A, Ideal forward base current)
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`OPP(OP_sib1, A, Ideal side-wall base current)
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`OPP(OP_ib2, A, Non-ideal forward base current)
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`OPP(OP_ib3, A, Non-ideal reverse base current)
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`OPP(OP_iavl, A, Avalanche current)
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`OPP(OP_iex, A, Extrinsic reverse base current)
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`OPP(OP_xiex, A, Extrinsic reverse base current)
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`OPP(OP_isub, A, Substrate current)
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`OPP(OP_xisub, A, Substrate current)
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`OPP(OP_isf, A, Substrate failure current)
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`OPP(OP_ire, A, Current through emitter resistance)
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`OPP(OP_irbc, A, Current through constant base resistance)
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`OPP(OP_ircblx, A, Current through extrinsic buried layer resistance)
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`OPP(OP_ircbli, A, Current through intrinsic buried layer resistance)
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`OPP(OP_ircc, A, Current through collector contact resistance)
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//The actual charges
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`OPP(OP_qe, C, Emitter charge or emitter neutral charge)
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`OPP(OP_qte, C, Base-emitter depletion charge)
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`OPP(OP_sqte, C, Sidewall base-emitter depletion charge)
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`OPP(OP_qbe, C, Base-emitter diffusion charge)
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`OPP(OP_qbc, C, Base_collector diffusion charge)
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`OPP(OP_qtc, C, Base-collector depletion charge)
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`OPP(OP_qepi, C, Epilayer diffusion charge)
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`OPP(OP_qb1b2, C, AC current crowding charge)
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`OPP(OP_qtex, C, Extrinsic base-collector depletion charge)
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`OPP(OP_xqtex, C, Extrinsic base-collector depletion charge)
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`OPP(OP_qex, C, Extrinsic base-collector diffusion charge)
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`OPP(OP_xqex, C, Extrinsic base-collector diffusion charge)
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`OPP(OP_qts, C, Collector-substrate depletion charge)
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//Small signal equivalent circuit conductances and resistances
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`OPP(OP_gx, S, Forward transconductance)
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`OPP(OP_gy, S, Reverse transconductance)
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`OPP(OP_gz, S, Reverse transconductance)
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`OPP(OP_sgpi, S, Conductance sidewall b-e junction)
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`OPP(OP_gpix, S, Conductance floor b-e junction)
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`OPP(OP_gpiy, S, Early effect on recombination base current)
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`OPP(OP_gpiz, S, Early effect on recombination base current)
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`OPP(OP_gmux, S, Early effect on avalanche current limiting)
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`OPP(OP_gmuy, S, Conductance of avalanche current)
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`OPP(OP_gmuz, S, Conductance of avalanche current)
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`OPP(OP_gmuex, S, Conductance of extrinsic b-c junction)
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`OPP(OP_xgmuex, S, Conductance of extrinsic b-c junction)
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`OPP(OP_grcvy, S, Conductance of epilayer current)
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`OPP(OP_grcvz, S, Conductance of epilayer current)
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`OPP(OP_rbv, Ohm, Base resistance)
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`OPP(OP_grbvx, S, Early effect on base resistance)
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`OPP(OP_grbvy, S, Early effect on base resistance)
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`OPP(OP_grbvz, S, Early effect on base resistance)
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`OPP(OP_re, Ohm, Emitter resistance)
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`OPP(OP_rbc, Ohm, Constant base resistance)
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`OPP(OP_rcc, Ohm, Collector contact resistance)
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`OPP(OP_rcblx, Ohm, Extrinsic buried layer resistance)
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`OPP(OP_rcbli, Ohm, Intrinsic buried layer resistance)
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`OPP(OP_gs, S, Conductance parasistic PNP transistor)
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`OPP(OP_xgs, S, Conductance parasistic PNP transistor)
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`OPP(OP_gsf, S, Conductance substrate failure current)
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//Small signal equivalent circuit capacitances
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`OPP(OP_scbe, F, Capacitance sidewall b-e junction)
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`OPP(OP_cbex, F, Capacitance floor b-e junction)
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`OPP(OP_cbey, F, Early effect on b-e diffusion charge)
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`OPP(OP_cbez, F, Early effect on b-e diffusion charge)
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`OPP(OP_cbcx, F, Early effect on b-c diffusion charge)
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`OPP(OP_cbcy, F, Capacitance floor b-c junction)
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`OPP(OP_cbcz, F, Capacitance floor b-c junction)
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`OPP(OP_cbcex, F, Capacitance extrinsic b-c junction)
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`OPP(OP_xcbcex, F, Capacitance extrinsic b-c junction)
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`OPP(OP_cb1b2, F, Capacitance AC current crowding)
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`OPP(OP_cb1b2x, F, Cross-capacitance AC current crowding)
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`OPP(OP_cb1b2y, F, Cross-capacitance AC current crowding)
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`OPP(OP_cb1b2z, F, Cross-capacitance AC current crowding)
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`OPP(OP_cts, F, Capacitance s-c junction)
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//Approximate small signal equivalent circuit
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`OPP(OP_gm, S,transconductance)
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`OPP(OP_beta, , Current amplification)
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`OPP(OP_gout, S, Output conductance)
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`OPP(OP_gmu, S, Feedback transconductance)
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`OPP(OP_rb, Ohm, Base resistance)
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`OPP(OP_rc, Ohm, Collector resistance)
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`OPP(OP_cbe, C, Base-emitter capacitance)
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`OPP(OP_cbc, C, Base-collector capacitance)
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//quantities to describe internal state of the model
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`OPP(OP_ft, , Good approximation for cut-off frequency)
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`OPP(OP_iqs, A, Current at onset of quasi-saturation)
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`OPP(OP_xiwepi, m, Thickness of injection layer)
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`OPP(OP_vb2c2star, V, Physical value of internal base-collector bias)
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//self-heating
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`OPP(OP_pdiss, W, Dissipation)
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`OPP(OP_tk, K, Actual temperature)
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//help variables
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real dydx, dydz, gpi;
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real gammax, gammay, gammaz, gbfx, gbfy, gbfz, alpha_ft;
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real rx, ry, rz, rb1b2, rex, xrex, taut;
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