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implemented hicum_diode as example

This commit is contained in:
mariok 2020-05-12 19:55:23 +02:00
parent 63bf7113d4
commit 890ccc415f
8 changed files with 24 additions and 384 deletions
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4
src/spicelib/devices/hicum2/Makefile.am
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@ -15,6 +15,8 @@ libhicum2_la_SOURCES = \
hicum2itf.h \
hicumL2.hpp \
hicumL2.cpp \
hicumL2temp.hpp \
hicumL2temp.cpp \
hicum2mask.c \
hicum2mpar.c \
hicum2noise.c \
@ -22,8 +24,6 @@ libhicum2_la_SOURCES = \
hicum2pzld.c \
hicum2setup.c \
hicum2soachk.c \
hicum2temp.hpp \
hicum2temp.cpp \
hicum2trunc.c

9
src/spicelib/devices/hicum2/hicum2ask.c
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@ -153,19 +153,19 @@ HICUMask(CKTcircuit *ckt, GENinstance *instPtr, int which, IFvalue *value, IFval
return(OK);
/* resistances */
case HICUM_QUEST_RCX_T:
value->rValue = here->HICUMrcx_t;
value->rValue = here->HICUMrcx_t.rpart;
return(OK);
case HICUM_QUEST_RE_T:
value->rValue = here->HICUMre_t;
value->rValue = here->HICUMre_t.rpart;
return(OK);
case HICUM_QUEST_IT:
value->rValue = *(ckt->CKTstate0 + here->HICUMiciei);
return(OK);
case HICUM_QUEST_RBI:
value->rValue = here->HICUMrbi;
value->rValue = here->HICUMrbi.rpart;
return(OK);
case HICUM_QUEST_RB:
value->rValue = here->HICUMrbi + here->HICUMrbx_t;
value->rValue = here->HICUMrbi.rpart + here->HICUMrbx_t.rpart;
return(OK);
/* transconductances and capacitances */
case HICUM_QUEST_BETADC:
@ -281,4 +281,3 @@ HICUMask(CKTcircuit *ckt, GENinstance *instPtr, int which, IFvalue *value, IFval
}
/* NOTREACHED */
}

2
src/spicelib/devices/hicum2/hicum2init.c
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@ -11,7 +11,7 @@
#include "hicum2ext.h"
#include "hicum2init.h"
#include "hicumL2.hpp"
#include "hicum2temp.hpp"
#include "hicumL2temp.hpp"
SPICEdev HICUMinfo = {

361
src/spicelib/devices/hicum2/hicum2temp.c
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@ -1,361 +0,0 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
Model Author: 1990 Michael Schröter TU Dresden
Spice3 Implementation: 2019 Dietmar Warning
**********/
#include "ngspice/ngspice.h"
#include "ngspice/cktdefs.h"
#include "ngspice/smpdefs.h"
#include "hicum2defs.h"
#include "ngspice/const.h"
#include "ngspice/sperror.h"
#include "ngspice/ifsim.h"
#include "ngspice/suffix.h"
#define TMAX 326.85
#define TMIN -100.0
#define LN_EXP_LIMIT 11.0
void TMPHICJ(double , double , double , double , double ,
double , double , double , double , double , double ,
double *, double *, double *);
// TEMPERATURE UPDATE OF JUNCTION CAPACITANCE RELATED PARAMETERS
// INPUT:
// mostly model parameters
// x : zero bias junction capacitance
// y : junction built-in potential
// z : grading co-efficient
// w : ratio of maximum to zero-bias value of capacitance or punch-through voltage
// is_al : condition factor to check what "w" stands for
// vgeff : band-gap voltage
// IMPLICIT INPUT:
// vt : thermal voltage
// vt0,qtt0,ln_qtt0,mg : other model variables
// OUTPUT:
// c_j_t : temperature update of "c_j"
// vd_t : temperature update of "vd0"
// w_t : temperature update of "w"
void TMPHICJ(double vt, double vt0, double qtt0, double ln_qtt0, double mg,
double c_j, double vd0, double z, double w, double is_al, double vgeff,
double *c_j_t, double *vd_t, double *w_t)
{
double vdj0,vdjt,vdt;
if (c_j > 0.0) {
vdj0 = 2*vt0*log(exp(vd0*0.5/vt0)-exp(-0.5*vd0/vt0));
vdjt = vdj0*qtt0+vgeff*(1-qtt0)-mg*vt*ln_qtt0;
vdt = vdjt+2*vt*log(0.5*(1+sqrt(1+4*exp(-vdjt/vt))));
*vd_t = vdt;
*c_j_t = c_j*exp(z*log(vd0/(*vd_t)));
if (is_al == 1) {
*w_t = w*(*vd_t)/vd0;
} else {
*w_t = w;
}
} else {
*c_j_t = c_j;
*vd_t = vd0;
*w_t = w;
}
}
int iret, hicum_thermal_update(HICUMmodel *, HICUMinstance *);
int
HICUMtemp(GENmodel *inModel, CKTcircuit *ckt)
/* Pre-compute many useful parameters
*/
{
HICUMmodel *model = (HICUMmodel *)inModel;
HICUMinstance *here;
/* loop through all the bipolar models */
for( ; model != NULL; model = HICUMnextModel(model)) {
/* loop through all the instances of the model */
for (here = HICUMinstances(model); here != NULL ;
here=HICUMnextInstance(here)) {
if(!here->HICUMtempGiven) here->HICUMtemp = ckt->CKTtemp;
if(here->HICUMdtempGiven) here->HICUMtemp = here->HICUMtemp + here->HICUMdtemp;
iret = hicum_thermal_update(model, here);
}
}
return(OK);
}
int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance)
{
HICUMmodel *model = (HICUMmodel *)inModel;
HICUMinstance *here = (HICUMinstance *)inInstance;
double k10,k20,avs,vgb_t0,vge_t0,vgbe_t0,vgbe0,vgbc0,vgsc0;
double zetabci,zetabcxt,zetasct;
double k1,k2,dvg0,vge_t,vgb_t,vgbe_t,cratio_t,a;
double k1_dT,k2_dT,dvg0_dT,vge_t_dT,vgb_t_dT,vgbe_t_dT,cratio_t_dT,a_dT;
double Tnom, dT, zetatef, cjcx01, cjcx02, C_1;
double cjci0_t, vdci_t, vptci_t, cjep0_t, vdep_t, ajep_t, vdcx_t, vptcx_t, cscp0_t, vdsp_t, vptsp_t, cjs0_t, vds_t, vpts_t;
Tnom = model->HICUMtnom;
k10 = model->HICUMf1vg*Tnom*log(Tnom);
k20 = model->HICUMf2vg*Tnom;
avs = model->HICUMalvs*Tnom;
vgb_t0 = model->HICUMvgb+k10+k20;
vge_t0 = model->HICUMvge+k10+k20;
vgbe_t0 = (vgb_t0+vge_t0)/2;
vgbe0 = (model->HICUMvgb+model->HICUMvge)/2;
vgbc0 = (model->HICUMvgb+model->HICUMvgc)/2;
vgsc0 = (model->HICUMvgs+model->HICUMvgc)/2;
here->HICUMmg = 3-model->HICUMf1vg/CONSTKoverQ;
zetabci = here->HICUMmg+1-model->HICUMzetaci;
zetabcxt= here->HICUMmg+1-model->HICUMzetacx;
zetasct = here->HICUMmg-1.5;
// Limit temperature to avoid FPEs in equations
if(here->HICUMtemp < TMIN + CONSTCtoK) {
here->HICUMtemp = TMIN + CONSTCtoK;
} else {
if (here->HICUMtemp > TMAX + CONSTCtoK) {
here->HICUMtemp = TMAX + CONSTCtoK;
}
}
here->HICUMvt0 = Tnom * CONSTKoverQ;
here->HICUMvt = here->HICUMtemp * CONSTKoverQ;
here->HICUMvt_dT = CONSTKoverQ;
dT = here->HICUMtemp-Tnom;
here->HICUMqtt0 = here->HICUMtemp/Tnom;
here->HICUMqtt0_dT = 1/Tnom;
here->HICUMln_qtt0 = log(here->HICUMqtt0);
here->HICUMln_qtt0_dT = 1/here->HICUMtemp; // d(log(x/a))/dx = 1/x
k1 = model->HICUMf1vg*here->HICUMtemp*log(here->HICUMtemp);
k1_dT = model->HICUMf1vg*(log(here->HICUMtemp) + 1);
k2 = model->HICUMf2vg*here->HICUMtemp;
k2_dT = model->HICUMf2vg;
vgb_t = model->HICUMvgb+k1+k2;
vgb_t_dT = k1_dT+k2_dT;
vge_t = model->HICUMvge+k1+k2;
vge_t_dT = k1_dT+k2_dT;
vgbe_t = (vgb_t+vge_t)/2;
vgbe_t_dT = (vgb_t_dT+vge_t_dT)/2;
here->HICUMtVcrit = here->HICUMvt *
log(here->HICUMvt / (CONSTroot2*model->HICUMibeis*here->HICUMarea*here->HICUMm));
//Internal b-e junction capacitance
TMPHICJ(here->HICUMvt0,here->HICUMvt,here->HICUMqtt0,here->HICUMln_qtt0,here->HICUMmg,model->HICUMcjei0,model->HICUMvdei,model->HICUMzei,model->HICUMajei,1,vgbe0,&here->HICUMcjei0_t,&here->HICUMvdei_t,&here->HICUMajei_t);
if (model->HICUMflcomp == 0.0 || model->HICUMflcomp == 2.1) {
double V_gT, r_VgVT, k;
V_gT = 3.0*here->HICUMvt*here->HICUMln_qtt0 + model->HICUMvgb*(here->HICUMqtt0-1.0);
r_VgVT = V_gT/here->HICUMvt;
//Internal b-e diode saturation currents
a = model->HICUMmcf*r_VgVT/model->HICUMmbei - model->HICUMalb*dT;
here->HICUMibeis_t = model->HICUMibeis*exp(a);
a = model->HICUMmcf*r_VgVT/model->HICUMmrei - model->HICUMalb*dT;
here->HICUMireis_t = model->HICUMireis*exp(a);
a = model->HICUMmcf*r_VgVT/model->HICUMmbep - model->HICUMalb*dT;
//Peripheral b-e diode saturation currents
here->HICUMibeps_t = model->HICUMibeps*exp(a);
a = model->HICUMmcf*r_VgVT/model->HICUMmrep - model->HICUMalb*dT;
here->HICUMireps_t = model->HICUMireps*exp(a);
//Internal b-c diode saturation current
a = r_VgVT/model->HICUMmbci;
here->HICUMibcis_t = model->HICUMibcis*exp(a);
//External b-c diode saturation currents
a = r_VgVT/model->HICUMmbcx;
here->HICUMibcxs_t = model->HICUMibcxs*exp(a);
//Saturation transfer current for substrate transistor
a = r_VgVT/model->HICUMmsf;
here->HICUMitss_t = model->HICUMitss*exp(a);
//Saturation current for c-s diode
a = r_VgVT/model->HICUMmsc;
here->HICUMiscs_t = model->HICUMiscs*exp(a);
//Zero bias hole charge
a = here->HICUMvdei_t/model->HICUMvdei;
here->HICUMqp0_t = model->HICUMqp0*(1.0+0.5*model->HICUMzei*(1.0-a));
//Voltage separating ohmic and saturation velocity regime
a = model->HICUMvlim*(1.0-model->HICUMalvs*dT)*exp(model->HICUMzetaci*here->HICUMln_qtt0);
k = (a-here->HICUMvt)/here->HICUMvt;
if (k < LN_EXP_LIMIT) {
here->HICUMvlim_t = here->HICUMvt + here->HICUMvt*log(1.0+exp(k));
} else {
here->HICUMvlim_t = a;
}
//Neutral emitter storage time
a = 1.0+model->HICUMalb*dT;
k = 0.5*(a+sqrt(a*a+0.01));
here->HICUMtef0_t = model->HICUMtef0*here->HICUMqtt0/k;
} else {
//Internal b-e diode saturation currents
here->HICUMibeis_t = model->HICUMibeis*exp(model->HICUMzetabet*here->HICUMln_qtt0+model->HICUMvge/here->HICUMvt*(here->HICUMqtt0-1));
if (model->HICUMflcomp>=2.3) {
here->HICUMireis_t = model->HICUMireis*exp(here->HICUMmg/model->HICUMmrei*here->HICUMln_qtt0+vgbe0/(model->HICUMmrei*here->HICUMvt)*(here->HICUMqtt0-1));
} else {
here->HICUMireis_t = model->HICUMireis*exp(0.5*here->HICUMmg*here->HICUMln_qtt0+0.5*vgbe0/here->HICUMvt*(here->HICUMqtt0-1));
}
//Peripheral b-e diode saturation currents
here->HICUMibeps_t = model->HICUMibeps*exp(model->HICUMzetabet*here->HICUMln_qtt0+model->HICUMvge/here->HICUMvt*(here->HICUMqtt0-1));
if (model->HICUMflcomp>=2.3) {
here->HICUMireps_t = model->HICUMireps*exp(here->HICUMmg/model->HICUMmrep*here->HICUMln_qtt0+vgbe0/(model->HICUMmrep*here->HICUMvt)*(here->HICUMqtt0-1));
} else {
here->HICUMireps_t = model->HICUMireps*exp(0.5*here->HICUMmg*here->HICUMln_qtt0+0.5*vgbe0/here->HICUMvt*(here->HICUMqtt0-1));
}
//Internal b-c diode saturation currents
here->HICUMibcis_t = model->HICUMibcis*exp(zetabci*here->HICUMln_qtt0+model->HICUMvgc/here->HICUMvt*(here->HICUMqtt0-1));
//External b-c diode saturation currents
here->HICUMibcxs_t = model->HICUMibcxs*exp(zetabcxt*here->HICUMln_qtt0+model->HICUMvgc/here->HICUMvt*(here->HICUMqtt0-1));
//Saturation transfer current for substrate transistor
here->HICUMitss_t = model->HICUMitss*exp(zetasct*here->HICUMln_qtt0+model->HICUMvgc/here->HICUMvt*(here->HICUMqtt0-1));
//Saturation current for c-s diode
here->HICUMiscs_t = model->HICUMiscs*exp(zetasct*here->HICUMln_qtt0+model->HICUMvgs/here->HICUMvt*(here->HICUMqtt0-1));
//Zero bias hole charge
a = exp(model->HICUMzei*log(here->HICUMvdei_t/model->HICUMvdei));
here->HICUMqp0_t = model->HICUMqp0*(2.0-a);
//Voltage separating ohmic and saturation velocity regime
here->HICUMvlim_t = model->HICUMvlim*exp((model->HICUMzetaci-avs)*here->HICUMln_qtt0);
//Neutral emitter storage time
if (model->HICUMflcomp >= 2.3) {
here->HICUMtef0_t = model->HICUMtef0;
} else {
zetatef = model->HICUMzetabet-model->HICUMzetact-0.5;
dvg0 = model->HICUMvgb-model->HICUMvge;
here->HICUMtef0_t = model->HICUMtef0*exp(zetatef*here->HICUMln_qtt0-dvg0/here->HICUMvt*(here->HICUMqtt0-1));
}
}
//GICCR prefactor
here->HICUMc10_t = model->HICUMc10*exp(model->HICUMzetact*here->HICUMln_qtt0+model->HICUMvgb/here->HICUMvt*(here->HICUMqtt0-1));
// Low-field internal collector resistance
here->HICUMrci0_t = model->HICUMrci0*exp(model->HICUMzetaci*here->HICUMln_qtt0);
//Voltage separating ohmic and saturation velocity regime
//vlim_t = model->HICUMvlim*exp((model->HICUMzetaci-avs)*here->HICUMln_qtt0);
//Internal c-e saturation voltage
here->HICUMvces_t = model->HICUMvces*(1+model->HICUMalces*dT);
//Internal b-c diode saturation current
//ibcis_t = model->HICUMibcis*exp(zetabci*here->HICUMln_qtt0+model->HICUMvgc/here->HICUMvt*(here->HICUMqtt0-1));
//Internal b-c junction capacitance
TMPHICJ(here->HICUMvt0,here->HICUMvt,here->HICUMqtt0,here->HICUMln_qtt0,here->HICUMmg,model->HICUMcjci0,model->HICUMvdci,model->HICUMzci,model->HICUMvptci,0,vgbc0,&cjci0_t,&vdci_t,&vptci_t);
here->HICUMcjci0_t = cjci0_t;
here->HICUMvdci_t = vdci_t;
here->HICUMvptci_t = vptci_t;
//Low-current forward transit time
here->HICUMt0_t = model->HICUMt0*(1+model->HICUMalt0*dT+model->HICUMkt0*dT*dT);
//Saturation time constant at high current densities
here->HICUMthcs_t = model->HICUMthcs*exp((model->HICUMzetaci-1)*here->HICUMln_qtt0);
//Avalanche current factors
here->HICUMfavl_t = model->HICUMfavl*exp(model->HICUMalfav*dT);
here->HICUMqavl_t = model->HICUMqavl*exp(model->HICUMalqav*dT);
here->HICUMkavl_t = model->HICUMkavl*exp(model->HICUMalkav*dT);
//Zero bias internal base resistance
here->HICUMrbi0_t = model->HICUMrbi0*exp(model->HICUMzetarbi*here->HICUMln_qtt0);
//Peripheral b-e junction capacitance
TMPHICJ(here->HICUMvt0,here->HICUMvt,here->HICUMqtt0,here->HICUMln_qtt0,here->HICUMmg,model->HICUMcjep0,model->HICUMvdep,model->HICUMzep,model->HICUMajep,1,vgbe0,&cjep0_t,&vdep_t,&ajep_t);
here->HICUMcjep0_t = cjep0_t;
here->HICUMvdep_t = vdep_t;
here->HICUMajep_t = ajep_t;
//Tunneling current factors
if (model->HICUMibets > 0) { // HICTUN_T
double a_eg,ab,aa;
ab = 1.0;
aa = 1.0;
a_eg=vgbe_t0/vgbe_t;
if(model->HICUMtunode==1 && model->HICUMcjep0 > 0.0 && model->HICUMvdep >0.0) {
ab = (here->HICUMcjep0_t/model->HICUMcjep0)*sqrt(a_eg)*vdep_t*vdep_t/(model->HICUMvdep*model->HICUMvdep);
aa = (model->HICUMvdep/vdep_t)*(model->HICUMcjep0/here->HICUMcjep0_t)*pow(a_eg,-1.5);
} else if (model->HICUMtunode==0 && model->HICUMcjei0 > 0.0 && model->HICUMvdei >0.0) {
ab = (here->HICUMcjei0_t/model->HICUMcjei0)*sqrt(a_eg)*here->HICUMvdei_t*here->HICUMvdei_t/(model->HICUMvdei*model->HICUMvdei);
aa = (model->HICUMvdei/here->HICUMvdei_t)*(model->HICUMcjei0/here->HICUMcjei0_t)*pow(a_eg,-1.5);
}
here->HICUMibets_t = model->HICUMibets*ab;
here->HICUMabet_t = model->HICUMabet*aa;
} else {
here->HICUMibets_t = 0;
here->HICUMabet_t = 1;
}
//Depletion capacitance splitting at b-c junction
//Capacitances at peripheral and external base node
C_1 = (1.0-model->HICUMfbcpar)*(model->HICUMcjcx0+model->HICUMcbcpar);
if (C_1 >= model->HICUMcbcpar) {
cjcx01 = C_1-model->HICUMcbcpar;
cjcx02 = model->HICUMcjcx0-cjcx01;
} else {
cjcx01 = 0.0;
cjcx02 = model->HICUMcjcx0;
}
//Temperature mapping for tunneling current is done inside HICTUN
TMPHICJ(here->HICUMvt0,here->HICUMvt,here->HICUMqtt0,here->HICUMln_qtt0,here->HICUMmg,1.0,model->HICUMvdcx,model->HICUMzcx,model->HICUMvptcx,0,vgbc0,&cratio_t,&vdcx_t,&vptcx_t);
here->HICUMcjcx01_t=cratio_t*cjcx01;
here->HICUMcjcx02_t=cratio_t*cjcx02;
here->HICUMvdcx_t = vdcx_t;
here->HICUMvptcx_t = vptcx_t;
//External b-c diode saturation currents
//ibcxs_t = model->HICUMibcxs*exp(zetabcxt*here->HICUMln_qtt0+model->HICUMvgc/here->HICUMvt*(qtt0-1));
//Constant external series resistances
here->HICUMrcx_t = model->HICUMrcx*exp(model->HICUMzetarcx*here->HICUMln_qtt0);
here->HICUMrbx_t = model->HICUMrbx*exp(model->HICUMzetarbx*here->HICUMln_qtt0);
here->HICUMre_t = model->HICUMre*exp(model->HICUMzetare*here->HICUMln_qtt0);
//Forward transit time in substrate transistor
here->HICUMtsf_t = model->HICUMtsf*exp((model->HICUMzetacx-1.0)*here->HICUMln_qtt0);
//Capacitance for c-s junction
TMPHICJ(here->HICUMvt0,here->HICUMvt,here->HICUMqtt0,here->HICUMln_qtt0,here->HICUMmg,model->HICUMcjs0,model->HICUMvds,model->HICUMzs,model->HICUMvpts,0,vgsc0,&cjs0_t,&vds_t,&vpts_t);
here->HICUMcjs0_t = cjs0_t;
here->HICUMvds_t = vds_t;
here->HICUMvpts_t = vpts_t;
/*Peripheral s-c capacitance
* Note, thermal update only required for model->HICUMvds > 0
* Save computional effort otherwise
*/
if (model->HICUMvdsp > 0) {
TMPHICJ(here->HICUMvt0,here->HICUMvt,here->HICUMqtt0,here->HICUMln_qtt0,here->HICUMmg,model->HICUMcscp0,model->HICUMvdsp,model->HICUMzsp,model->HICUMvptsp,0,vgsc0,&cscp0_t,&vdsp_t,&vptsp_t);
here->HICUMcscp0_t = cscp0_t;
here->HICUMvdsp_t = vdsp_t;
here->HICUMvptsp_t = vptsp_t;
} else {
// Avoid uninitialized variables
here->HICUMcscp0_t = model->HICUMcscp0;
here->HICUMvdsp_t = model->HICUMvdsp;
here->HICUMvptsp_t = model->HICUMvptsp;
}
here->HICUMahjei_t = model->HICUMahjei*exp(model->HICUMzetahjei*here->HICUMln_qtt0);
here->HICUMhjei0_t = model->HICUMhjei*exp(model->HICUMdvgbe/here->HICUMvt*(exp(model->HICUMzetavgbe*log(here->HICUMqtt0))-1));
here->HICUMhf0_t = model->HICUMhf0*exp(model->HICUMdvgbe/here->HICUMvt*(here->HICUMqtt0-1));
if (model->HICUMflcomp >= 2.3) {
here->HICUMhfe_t = model->HICUMhfe*exp((model->HICUMvgb-model->HICUMvge)/here->HICUMvt*(here->HICUMqtt0-1));
here->HICUMhfc_t = model->HICUMhfc*exp((model->HICUMvgb-model->HICUMvgc)/here->HICUMvt*(here->HICUMqtt0-1));
} else {
here->HICUMhfe_t = model->HICUMhfe;
here->HICUMhfc_t = model->HICUMhfc;
}
here->HICUMrth_t = model->HICUMrth*exp(model->HICUMzetarth*here->HICUMln_qtt0)*(1+model->HICUMalrth*dT);
return(0);
}

26
src/spicelib/devices/hicum2/hicumL2.cpp
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@ -109,7 +109,7 @@ using namespace duals::literals;
// T : Temperature
// OUTPUT:
// Iz : diode current
duals::duald HICDIO(duals::duald T, double IST, double UM1, duals::duald U)
duals::duald HICDIO(duals::duald T, duals::duald IST, double UM1, duals::duald U)
{
duals::duald DIOY, le, vt;
@ -314,17 +314,19 @@ duals::duald calc_hjei_vbe(duals::duald Vbiei, duals::duald T, HICUMinstance * h
}
void hicum_diode(double T, double IS, double UM1, double U, double *Iz, double *Gz, double *Tz)
void hicum_diode(double T, dual_double IS, double UM1, double U, double *Iz, double *Gz, double *Tz)
{
//wrapper for hicum diode equation that also generates derivatives
duals::duald result = 0;
// printf("executed diode");
result = HICDIO(T, IS, UM1, U+1_e);
duals::duald is_t = IS.rpart;
result = HICDIO(T, is_t, UM1, U+1_e);
*Iz = result.rpart();
*Gz = result.dpart(); //derivative for U
result = HICDIO(T+1_e, IS, UM1, U);
is_t.dpart(IS.dpart);
result = HICDIO(T+1_e, is_t, UM1, U);
*Tz = result.dpart(); //derivative for T
}
@ -648,14 +650,14 @@ HICUMload(GENmodel *inModel, CKTcircuit *ckt)
// INPUT:
// itf : forward transport current
// I_CK : critical current
// T_f : transit time
// T_f : transit time
// Q_f : minority charge / for low current
// IMPLICIT INPUT:
// tef0, gtfe, fthc, thcs, ahc, latl, latb : model parameters
// OUTPUT:
// T_f : transit time
// T_f : transit time
// Q_f : minority charge transient analysis
// T_fT : transit time
// T_fT : transit time
// Q_fT : minority charge ICCR (transfer current)
// Q_bf : excess base charge
std::function<void (duals::duald, duals::duald, duals::duald, duals::duald*, duals::duald*, duals::duald*, duals::duald*, duals::duald*)> HICQFF = [&](duals::duald T, duals::duald itf, duals::duald I_CK, duals::duald * T_f, duals::duald * Q_f, duals::duald * T_fT, duals::duald * Q_fT, duals::duald * Q_bf)
@ -1890,7 +1892,7 @@ HICUMload(GENmodel *inModel, CKTcircuit *ckt)
it_dT = it_ditf*itf_dT + it_ditr*itr_dT;
//recast the derivative after Vciei to a derivative to Vbiei and Vciei
// Vciei = Vbiei - Vbici
// Vciei = Vbiei - Vbici
// dVciei/dVbiei = 1
// dVciei/dVbici = -1
it_Vbiei += (itf_Vciei - itr_Vciei);
@ -1946,7 +1948,7 @@ HICUMload(GENmodel *inModel, CKTcircuit *ckt)
ibh_rec_Vbici = Otbhrec*Q_bf_Vbici ;
ibh_rec_dT = Otbhrec*Q_bf_dT ;
//recast the derivative after Vciei to a derivative to Vbiei and Vciei
// Vciei = Vbiei - Vbici
// Vciei = Vbiei - Vbici
// dVciei/dVbiei = 1
// dVciei/dVbici = -1
ibh_rec_Vbiei += Q_bf_Vciei;
@ -2027,15 +2029,15 @@ HICUMload(GENmodel *inModel, CKTcircuit *ckt)
Qdsu = result_Qdsu.rpart();
HSI_Tsu_dT = result_HSI_TSU.dpart();
Qdsu_dT = result_Qdsu.dpart();
calc_itss(here->HICUMtemp , Vbpci+1_e, Vsici , &result_HSI_TSU, &result_Qdsu);
HSI_Tsu_Vbpci = result_HSI_TSU.dpart();
Qdsu_Vbpci = result_Qdsu.dpart();
calc_itss(here->HICUMtemp , Vbpci , Vsici+1_e, &result_HSI_TSU, &result_Qdsu);
HSI_Tsu_Vsici = result_HSI_TSU.dpart();
Qdsu_Vsici = result_Qdsu.dpart(); //@Dietmar. Where is this one written to the matrix?
// if(model->HICUMitss > 0.0) { // Sub_Transfer
// double HSa,HSb;
// HSUM = model->HICUMmsf*here->HICUMvt;

2
src/spicelib/devices/hicum2/hicum2temp.cpp → src/spicelib/devices/hicum2/hicumL2temp.cpp
View File

@ -11,7 +11,7 @@ Spice3 Implementation: 2019 Dietmar Warning
#define M_PI 3.1415926535897932384626433832795
#endif
#include <duals/dual>
#include "hicum2temp.hpp"
#include "hicumL2temp.hpp"
#include <functional>
#include <fenv.h> //trap NAN

0
src/spicelib/devices/hicum2/hicum2temp.hpp → src/spicelib/devices/hicum2/hicumL2temp.hpp
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4
tests/hicum2/FG.cir
View File

@ -3,10 +3,10 @@ VE Q1_E 0 1.0
VC Q1_C 0 0.0
VB Q1_B 0 0.0
RT Q1_T 0 1M
Q1 Q1_C Q1_B Q1_E Q1_E Q1_T P1 icVBE=0.2 icVCE=0.2 dt=0.0
Q1 Q1_C Q1_B Q1_E Q1_E Q1_T P1 icVB=0.2 icVC=0.2 dt=0.0
* .DC VE -0.2 -1.2 -10m
.DC VE -0.2 -0.21 -10m
.OPTIONS GMIN=1e-13 NOACCT
.OPTIONS GMIN=1e-13 NOACCT TEMP=20 TNOM=30
.print dc abs(i(vc)) abs(i(vb))