Replace $ in instance and.model lines by ;
$ is not a valid end-of-line comment delimiter when PS compatibility mode is chosen.
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@ -24,10 +24,10 @@ VR2 r2 0 dc 0 trrandom (2 'ttime10' 0 1) ; Gauss controlling voltage
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* If Gauss, factor 0.033 is 10% equivalent to 3 sigma
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* if uniform, uniform between +/- 10%
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R2 4 6 R = 'res + 0.033 * res*V(r2)' ; behavioral resistor
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*R2 4 6 'res' $ constant R
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*R2 4 6 'res' ; constant R
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VC2 c2 0 dc 0 trrandom (2 'ttime10' 0 1)
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*C2 6 3'cn' $ constant C
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*C2 6 3'cn' ; constant C
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C2 6 3 C = 'cn + 0.033 * cn*V(c2)' ; behavioral capacitor
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VR1 r1 0 dc 0 trrandom (2 'ttime10' 0 1)
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@ -74,7 +74,7 @@ ROUT 5 6 10
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.control
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option noinit
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run
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plot V(4) 5*V(r1) 5*V(r2) 5*V(c1) 5*V(c2)
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plot 5*V(r1) 5*V(r2) 5*V(c1) 5*V(c2) V(4)
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linearize v(4)
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fft v(4)
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let v4mag = mag(v(4))
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@ -22,8 +22,8 @@ CL 4 0 5.0PF
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.MODEL M_NPN NBJT LEVEL=2
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+ TITLE TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
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+ $ SINCE ONLY HALF THE DEVICE IS SIMULATED, DOUBLE THE UNIT WIDTH TO GET
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+ $ 1.0 UM EMITTER.
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+ ; SINCE ONLY HALF THE DEVICE IS SIMULATED, DOUBLE THE UNIT WIDTH TO GET
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+ ; 1.0 UM EMITTER.
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+ OPTIONS DEFW=2.0U
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+ OUTPUT STATISTICS
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+
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@ -49,15 +49,15 @@ RS2 66 6 0.001
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RS3 22 6 1e12
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RS4 66 2 1e12
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*Driver
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Vacdc 1 0 DC 'Vbias_in' AC 1 $ ac voltage and dc bias at input (applied through load resistor)
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Vacdc 1 0 DC 'Vbias_in' AC 1 ; ac voltage and dc bias at input (applied through load resistor)
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R1 1 2 'Rbase'
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E1 3 0 2 0 2 $ amplify in port ac voltage by 2
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Vac 3 4 DC 0 AC 1 $ subtract driving ac voltage
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E1 3 0 2 0 2 ; amplify in port ac voltage by 2
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Vac 3 4 DC 0 AC 1 ; subtract driving ac voltage
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R_loop 4 5 0.001
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R3 5 0 1 $ ground return for measure node 5
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R3 5 0 1 ; ground return for measure node 5
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*Readout
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E2 7 0 6 0 2 $ amplify out port ac voltage by 2
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R4 6 8 'Rbase' $ load resistor at output (ac)
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E2 7 0 6 0 2 ; amplify out port ac voltage by 2
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R4 6 8 'Rbase' ; load resistor at output (ac)
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Vdc 8 0 DC 'Vbias_out' AC 0 $ dc bias at output (applied through load resistor)
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.ends
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@ -18,11 +18,11 @@ vbsp 44 0 0
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.model n1 nmos level=49 version=3.3.0 tox=3.5n nch=2.4e17 nsub=5e16 vth0=0.15
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.model p1 pmos level=49 version=3.3.0 tox=3.5n nch=2.5e17 nsub=5e16 vth0=-0.15
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*.include ./Modelcards/modelcard.nmos $ Berkeley model cards limited to L >= 0.35µm
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*.include ./Modelcards/modelcard.pmos $ Berkeley model cards limited to L >= 0.35µm
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*.include ./Modelcards/modelcard.nmos ; Berkeley model cards limited to L >= 0.35µm
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*.include ./Modelcards/modelcard.pmos ; Berkeley model cards limited to L >= 0.35µm
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* update of the default parameters required
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*.model n1 NMOS level=49 version=3.3.0 $ nearly no current due to VT > 2 V ?
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*.model n1 NMOS level=49 version=3.3.0 ; nearly no current due to VT > 2 V ?
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*.model p1 PMOS level=49 version=3.3.0
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.control
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@ -4,10 +4,10 @@ v1 1 0 dc 2 ac 1
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v2 200 0 dc=1
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R1 1 2 1k
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R2 2 0 1k tc1=0.001 $ tc2=1e-5
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R2 2 0 1k tc1=0.001 ; tc2=1e-5
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R10 1 20 1k
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R20 20 0 '1k*v(200)' tc1=0.001 $ tc2=1e-5
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R20 20 0 '1k*v(200)' tc1=0.001 ; tc2=1e-5
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.temp 127.0
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@ -34,7 +34,7 @@ plot dc3.vs2#branch vs2#branch
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* David Zan, (c) 2017/03/02 Preliminary
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.MODEL IXTH80N20L VDMOS Nchan Vds=200
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+ VTO=4 KP=15
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+ Lambda=3m $ will be reset by altermod to original 2m
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+ Lambda=3m ; will be reset by altermod to original 2m
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+ Mtriode=0.4
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+ Ksubthres=120m
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+ subshift=160m
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@ -46,12 +46,12 @@ plot dc3.vs2#branch vs2#branch
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+ NBV=4
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+ TT=250e-9
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+ vq=100
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+ rq=0.5 $ will be reset by altermod to original 0
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+ rq=0.5 ; will be reset by altermod to original 0
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* David Zan, (c) 2017/03/02 Preliminary
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.MODEL IXTH48P20P VDMOS Pchan Vds=200
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+ VTO=-4 KP=10
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+ Lambda=7m $ will be reset by altermod to original 5m
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+ Lambda=7m ; will be reset by altermod to original 5m
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+ Mtriode=0.3
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+ Ksubthres=120m
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+ Rs=10m Rd=20m Rds=200e6
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@ -62,6 +62,6 @@ plot dc3.vs2#branch vs2#branch
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+ NBV=4
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+ TT=260e-9
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+ vq=100
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+ rq=0.5 $ will be reset by altermod to original 0
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+ rq=0.5 ; will be reset by altermod to original 0
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.end
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@ -10,7 +10,7 @@ m1 d g s IXTP6N100D2
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.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p a=1 TT=1371n IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF ksubthres=0.1)
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Vd d 0 ac 1 dc -0.5 pwl(0 2 2.5 -0.5)
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Vg g 0 -5 $ transistor is off
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Vg g 0 -5 ; transistor is off
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Vs s 0 0
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.control
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