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Added example files for cider simulator.

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pnenzi 2004-01-26 12:25:22 +00:00
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4
ChangeLog
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2004-01-26 Paolo Nenzi <p.nenzi@ieee.org>
* tests/cider: Added example files for cider simulator.
2004-01-25 Paolo Nenzi <p.nenzi@ieee.org>
* configure.in, acconfig.h: Added configure options for the

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tests/cider/bicmos/bicmos.lib Normal file
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.MODEL M_NPN nbjt level=2
+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
+ * Since, we are only simulating half of a device, we double the unit width
+ * 1.0 um emitter length
+ options defw=2.0u
+ output dc.debug stat
+
+ *x.mesh w=2.5 n=5
+ x.mesh w=2.0 h.e=0.05 h.m=0.2 r=1.5
+ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5
+
+ y.mesh l=-0.2 n=1
+ y.mesh l= 0.0 n=5
+ y.mesh w=0.10 h.e=0.002 h.m=0.01 r=1.5
+ y.mesh w=0.15 h.s=0.002 h.m=0.01 r=1.5
+ y.mesh w=0.35 h.s=0.01 h.m=0.2 r=1.5
+ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5
+ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5
+
+ domain num=1 material=1 x.l=2.0 y.h=0.0
+ domain num=2 material=2 x.h=2.0 y.h=0.0
+ domain num=3 material=3 y.l=0.0
+ material num=1 polysilicon
+ material num=2 oxide
+ material num=3 silicon
+
+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3
+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2
+
+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
+ + char.l=0.047 lat.rotate
+ doping gauss p.type conc=1e19 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
+ + char.l=0.094 lat.rotate
+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
+ + char.l=0.100 lat.rotate
+
+ method ac=direct itlim=10
+ models bgn srh auger conctau concmob fieldmob
.MODEL M_NMOS_1 numos
+ output dc.debug stat
+ title 1.0um NMOS Device
+
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
+
+ y.mesh l=-.0200 n=1
+ y.mesh l=0.0 n=6
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
+
+ region num=1 material=1 y.h=0.0
+ region num=2 material=2 y.l=0.0
+ interface dom=2 nei=1 x.l=1.0 x.h=2.0 layer.width=0.0
+ material num=1 oxide
+ material num=2 silicon
+
+ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0
+ elec num=2 x.l=1.0 x.h=2.0 iy.l=1 iy.h=1
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0
+
+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
+ + char.l=0.30
+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1.0 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+ doping gauss n.type conc=4e17 x.l=2.0 x.h=3.1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss n.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+
+ contact num=2 workf=4.10
+ models concmob fieldmob surfmob srh auger conctau bgn ^aval
+ method ac=direct itlim=10 onec
.MODEL M_PMOS_1 numos
+ title 1.0um PMOS Device
+
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
+
+ y.mesh l=-.0200 n=1
+ y.mesh l=0.0 n=6
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
+
+ region num=1 material=1 y.h=0.0
+ region num=2 material=2 y.l=0.0
+ interface dom=2 nei=1 x.l=1.0 x.h=2.0 layer.width=0.0
+ material num=1 oxide
+ material num=2 silicon
+
+ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0
+ elec num=2 x.l=1.0 x.h=2.0 iy.l=1 iy.h=1
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0
+
+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
+ + char.l=0.30
+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1.0 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+ doping gauss p.type conc=4e17 x.l=2.0 x.h=3.1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss p.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+
+ contact num=2 workf=5.29
+ models concmob fieldmob surfmob srh auger conctau bgn ^aval
+ method ac=direct itlim=10 onec

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tests/cider/bicmos/bicmpd.cir Normal file
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BiCMOS Pulldown Circuit
VSS 2 0 0v
VIN 3 2 0v (PULSE 0.0v 4.2v 0ns 1ns 1ns 9ns 20ns)
M1 8 3 5 11 M_NMOS_1 W=4u L=1u
VD 4 8 0v
VBK 11 2 0v
Q1 10 7 9 M_NPN AREA=8
VC 4 10 0v
VB 5 7 0v
VE 9 2 0v
CL 4 6 1pF
VL 6 2 0v
.IC V(10)=5.0v V(7)=0.0v
.TRAN 0.1ns 5ns 0ns 0.1ns
.PLOT TRAN I(VIN)
.include bicmos.lib
.OPTIONS ACCT BYPASS=1
.END

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tests/cider/bjt/astable.cir Normal file
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Astable multivibrator
vin 5 0 dc 0 pulse(0 5 0 1us 1us 100us 100us)
vcc 6 0 5.0
rc1 6 1 1k
rc2 6 2 1k
rb1 6 3 30k
rb2 5 4 30k
c1 1 4 150pf
c2 2 3 150pf
q1 1 3 0 qmod area = 100p
q2 2 4 0 qmod area = 100p
.option acct bypass=1
.tran 0.05us 8us 0us 0.05us
.print tran v(1) v(2) v(3) v(4)
.model qmod nbjt level=1
+ x.mesh node=1 loc=0.0
+ x.mesh node=61 loc=3.0
+ region num=1 material=1
+ material num=1 silicon nbgnn=1e17 nbgnp=1e17
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
+ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
+ models bgnw srh conctau auger concmob fieldmob
+ options base.length=1.0 base.depth=1.25
.end

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tests/cider/bjt/colposc.cir Normal file
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Colpitt's Oscillator Circuit
r1 1 0 1
q1 2 1 3 qmod area = 100p
vcc 4 0 5
rl 4 2 750
c1 2 3 500p
c2 4 3 4500p
l1 4 2 5uH
re 3 6 4.65k
vee 6 0 dc -15 pwl 0 -15 1e-9 -10
.tran 30n 12u
.print tran v(2)
.model qmod nbjt level=1
+ x.mesh node=1 loc=0.0
+ x.mesh node=61 loc=3.0
+ region num=1 material=1
+ material num=1 silicon nbgnn=1e17 nbgnp=1e17
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
+ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
+ models bgnw srh conctau auger concmob fieldmob
+ options base.length=1.0 base.depth=1.25
.options acct bypass=1
.end

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tests/cider/bjt/ecp.cir Normal file
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Emitter Coupled Pair
VCC 1 0 5v
VEE 2 0 0v
RCP 1 11 10k
RCN 1 21 10k
VBBP 12 0 3v AC 1
VBBN 22 0 3v
IEE 13 2 0.1mA
Q1 11 12 13 M_NPN AREA=8
Q2 21 22 13 M_NPN AREA=8
.DC VBBP 2.75v 3.25001v 10mv
.PRINT V(21) V(11)
.MODEL M_NPN nbjt level=2
+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
+ * Since, we are only simulating half of a device, we double the unit width
+ * 1.0 um emitter length
+ options defw=2.0u
+
+ *x.mesh w=2.5 n=5
+ x.mesh w=2.0 h.e=0.05 h.m=0.2 r=1.5
+ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5
+
+ y.mesh l=-0.2 n=1
+ y.mesh l= 0.0 n=5
+ y.mesh w=0.10 h.e=0.002 h.m=0.01 r=1.5
+ y.mesh w=0.15 h.s=0.002 h.m=0.01 r=1.5
+ y.mesh w=0.35 h.s=0.01 h.m=0.2 r=1.5
+ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5
+ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5
+
+ domain num=1 material=1 x.l=2.0 y.h=0.0
+ domain num=2 material=2 x.h=2.0 y.h=0.0
+ domain num=3 material=3 y.l=0.0
+ material num=1 polysilicon
+ material num=2 oxide
+ material num=3 silicon
+
+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3
+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2
+
+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
+ + char.l=0.047 lat.rotate
+ doping gauss p.type conc=1e19 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
+ + char.l=0.094 lat.rotate
+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
+ + char.l=0.100 lat.rotate
+
+ method ac=direct itlim=10
+ models bgn srh auger conctau concmob fieldmob
.OPTIONS ACCT BYPASS=1
.END

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tests/cider/bjt/invchain.cir Normal file
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4 Stage RTL Inverter Chain
vin 1 0 dc 0v pwl 0ns 0v 1ns 5v
vcc 12 0 dc 5.0v
rc1 12 3 2.5k
rb1 1 2 8k
q1 3 2 0 qmod area = 100p
rb2 3 4 8k
rc2 12 5 2.5k
q2 5 4 0 qmod area = 100p
rb3 5 6 8k
rc3 12 7 2.5k
q3 7 6 0 qmod area = 100p
rb4 7 8 8k
rc4 12 9 2.5k
q4 9 8 0 qmod area = 100p
.print tran v(3) v(5) v(9)
.tran 1e-9 10e-9
.model qmod nbjt level=1
+ x.mesh node=1 loc=0.0
+ x.mesh node=61 loc=3.0
+ region num=1 material=1
+ material num=1 silicon nbgnn=1e17 nbgnp=1e17
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
+ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
+ models bgnw srh conctau auger concmob fieldmob
+ options base.length=1.0 base.depth=1.25
.option acct bypass=1
.end

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tests/cider/bjt/meclgate.cir Normal file
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Motorola MECL III ECL gate
*.dc vin -2.0 0 0.02
.tran 0.2ns 20ns
vee 22 0 -6.0
vin 1 0 pulse -0.8 -1.8 0.2ns 0.2ns 0.2ns 10ns 20ns
rs 1 2 50
q1 4 2 6 qmod area = 100p
q2 4 3 6 qmod area = 100p
q3 5 7 6 qmod area = 100p
q4 0 8 7 qmod area = 100p
d1 8 9 dmod
d2 9 10 dmod
rp1 3 22 50k
rc1 0 4 100
rc2 0 5 112
re 6 22 380
r1 7 22 2k
r2 0 8 350
r3 10 22 1958
q5 0 5 11 qmod area = 100p
q6 0 4 12 qmod area = 100p
rp2 11 22 560
rp3 12 22 560
q7 13 12 15 qmod area = 100p
q8 14 16 15 qmod area = 100p
re2 15 22 380
rc3 0 13 100
rc4 0 14 112
q9 0 17 16 qmod area = 100p
r4 16 22 2k
r5 0 17 350
d3 17 18 dmod
d4 18 19 dmod
r6 19 22 1958
q10 0 14 20 qmod area = 100p
q11 0 13 21 qmod area = 100p
rp4 20 22 560
rp5 21 22 560
.model dmod d rs=40 tt=0.1ns cjo=0.9pf n=1 is=1e-14 eg=1.11 vj=0.8 m=0.5
.model qmod nbjt level=1
+ x.mesh node=1 loc=0.0
+ x.mesh node=10 loc=0.9
+ x.mesh node=20 loc=1.1
+ x.mesh node=30 loc=1.4
+ x.mesh node=40 loc=1.6
+ x.mesh node=61 loc=3.0
+ region num=1 material=1
+ material num=1 silicon nbgnn=1e17 nbgnp=1e17
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
+ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
+ models bgnw srh conctau auger concmob fieldmob
+ options base.length=1.0 base.depth=1.25
.options acct bypass=1
.print tran v(12) v(21)
.end

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tests/cider/bjt/pebjt.lib Normal file
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**
* Numerical models for a
* polysilicon emitter complementary bipolar process.
* The default device size is 1um by 10um (LxW)
**
.model M_NPN nbjt level=1
+ title One-Dimensional Numerical Bipolar
+ options base.depth=0.15 base.area=0.1 base.length=1.0 defa=10p
+ x.mesh loc=-0.2 n=1
+ x.mesh loc=0.0 n=51
+ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2
+ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2
+ domain num=1 material=1 x.l=0.0
+ domain num=2 material=2 x.h=0.0
+ material num=1 silicon
+ mobility mat=1 concmod=ct fieldmod=ct
+ material num=2 polysilicon
+ mobility mat=2 concmod=ct fieldmod=ct
+ doping gauss n.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047
+ doping gauss p.type conc=5e18 x.l=-0.2 x.h=0.0 char.len=0.100
+ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3
+ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100
+ models bgn srh auger conctau concmob fieldmob ^aval
+ method devtol=1e-12 ac=direct itlim=15
.model M_NPSUB numd level=1
+ title One-Dimensional Numerical Collector-Substrate Diode
+ options defa=10p
+ x.mesh loc=1.3 n=1
+ x.mesh loc=2.0 n=101
+ domain num=1 material=1
+ material num=1 silicon
+ mobility mat=1 concmod=ct fieldmod=ct
+ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100
+ doping unif p.type conc=1e15 x.l=0.0 x.h=2.0
+ models bgn srh auger conctau concmob fieldmob ^aval
+ method devtol=1e-12 itlim=10
.model M_PNP nbjt level=1
+ title One-Dimensional Numerical Bipolar
+ options base.depth=0.2 base.area=0.1 base.length=1.0 defa=10p
+ x.mesh loc=-0.2 n=1
+ x.mesh loc=0.0 n=51
+ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2
+ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2
+ domain num=1 material=1 x.l=0.0
+ domain num=2 material=2 x.h=0.0
+ material num=1 silicon
+ mobility mat=1 concmod=ct fieldmod=ct
+ material num=2 polysilicon
+ mobility mat=2 concmod=ct fieldmod=ct
+ doping gauss p.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047
+ doping gauss n.type conc=5e17 x.l=-0.2 x.h=0.0 char.len=0.200
+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.3
+ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100
+ models bgn srh auger conctau concmob fieldmob ^aval
+ method devtol=1e-12 ac=direct itlim=15
.model M_PNSUB numd level=1
+ title One-Dimensional Numerical Collector-Substrate Diode
+ options defa=10p
+ x.mesh loc=1.3 n=1
+ x.mesh loc=2.0 n=101
+ domain num=1 material=1
+ material num=1 silicon
+ mobility mat=1 concmod=ct fieldmod=ct
+ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100
+ doping unif n.type conc=1e15 x.l=0.0 x.h=2.0
+ models bgn srh auger conctau concmob fieldmob ^aval
+ method devtol=1e-12 itlim=10

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tests/cider/bjt/pz.cir Normal file
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PZ Analysis of a Common Emitter Amplifier
Vcc 1 0 5v
Vee 2 0 0v
Vin 3 0 0.7838 AC 1
RS 3 4 1K
Q1 5 4 2 M_NPN AREA=4 SAVE
RL 1 5 2.5k
CL 5 0 0.1pF
.INCLUDE pebjt.lib
.PZ 3 0 5 0 vol pz
.END

29
tests/cider/bjt/rtlinv.cir Normal file
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RTL inverter
vin 1 0 dc 1 pwl 0 4 1ns 0
vcc 12 0 dc 5.0
rc1 12 3 2.5k
rb1 1 2 8k
q1 3 2 0 qmod area = 100p
.option acct bypass=1
.tran 0.5n 5n
.print tran v(2) v(3)
.model qmod nbjt level=1
+ x.mesh node=1 loc=0.0
+ x.mesh node=61 loc=3.0
+ region num=1 material=1
+ material num=1 silicon nbgnn=1e17 nbgnp=1e17
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
+ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
+ models bgnw srh conctau auger concmob fieldmob
+ options base.length=1.0 base.depth=1.25
.end

45
tests/cider/bjt/vco.cir Normal file
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Voltage controlled oscillator
rc1 7 5 1k
rc2 7 6 1k
q5 7 7 5 qmod area = 100p
q6 7 7 6 qmod area = 100p
q3 7 5 2 qmod area = 100p
q4 7 6 1 qmod area = 100p
ib1 2 0 .5ma
ib2 1 0 .5ma
cb1 2 0 1pf
cb2 1 0 1pf
q1 5 1 3 qmod area = 100p
q2 6 2 4 qmod area = 100p
c1 3 4 .1uf
is1 3 0 dc 2.5ma pulse 2.5ma 0.5ma 0 1us 1us 50ms
is2 4 0 1ma
vcc 7 0 10
.model qmod nbjt level=1
+ x.mesh node=1 loc=0.0
+ x.mesh node=61 loc=3.0
+ region num=1 material=1
+ material num=1 silicon nbgnn=1e17 nbgnp=1e17
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
+ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
+ models bgnw srh conctau auger concmob fieldmob
+ options base.length=1.0 base.depth=1.25
.option acct bypass=1
.tran 3us 600us 0 3us
.print tran v(4)
.end

35
tests/cider/diode/diode.cir Normal file
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One-Dimensional Diode Simulation
* Several simulations are performed by this file.
* They are:
* 1. An operating point at 0.7v forward bias.
* 2. An ac analysis at 0.7v forward bias.
* 3. The forward and reverse bias characteristics from -3v to 2v.
Vpp 1 0 0.7v (PWL 0ns 3.0v 0.01ns -6.0v) (AC 1v)
Vnn 2 0 0v
D1 1 2 M_PN AREA=100
.model M_PN numd level=1
+ ***************************************
+ *** One-Dimensional Numerical Diode ***
+ ***************************************
+ options defa=1p
+ x.mesh loc=0.0 n=1
+ x.mesh loc=1.3 n=201
+ domain num=1 material=1
+ material num=1 silicon
+ mobility mat=1 concmod=ct fieldmod=ct
+ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.0 char.l=0.100
+ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3
+ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.l=0.100
+ models bgn aval srh auger conctau concmob fieldmob
+ method ac=direct
.option acct bypass=0 abstol=1e-18 itl2=100
.op
.ac dec 10 100kHz 10gHz
.dc Vpp -3.0v 2.0001v 50mv
.print i(Vpp)
.END

31
tests/cider/diode/diotran.cir Normal file
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Diode Reverse Recovery
* This file simulates reverse recovery of a diode as it switched from an
* on to off state.
Vpp 1 0 0.7v (PWL 0ns 3.0v 0.1ns 3.0v 0.11ns -6.0v) (AC 1v)
Vnn 2 0 0v
R1 1 3 1k
D1 3 2 M_PN area=100
.MODEL M_PN numd level=1
+ ***************************************
+ *** One-Dimensional Numerical Diode ***
+ ***************************************
+ options defa=1p
+ x.mesh loc=0.0 n=1
+ x.mesh loc=1.3 n=201
+ domain num=1 material=1
+ material num=1 silicon
+ mobility mat=1 concmod=ct fieldmod=ct
+ doping gauss p.type conc=3e20 x.l=0.0 x.h=0.0 char.l=0.100
+ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3
+ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.l=0.100
+ models bgn aval srh auger conctau concmob fieldmob
+ method ac=direct
.option acct bypass=1 abstol=1e-15 itl2=100
.tran 0.001ns 1.0ns
.print i(Vpp)
.END

42
tests/cider/diode/pindiode.cir Normal file
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TWO-DIMENSIONAL PIN-DIODE CIRCUIT
VIN 1 0 0.0v (PWL 0ns 0.8v 1ns -50.0v)
L1 1 2 0.5uH
VD 2 3 0.0v
D1 3 0 M_PIN AREA=200 IC.FILE="OP.0.d1"
VRC 2 4 0.0v
R1 4 5 100
C1 5 0 1.0nF
.MODEL M_PIN NUMD LEVEL=2
+ options defw=1000u
+ x.mesh n=1 l=0.0
+ x.mesh n=2 l=0.2
+ x.mesh n=4 l=0.4
+ x.mesh n=8 l=0.6
+ x.mesh n=13 l=1.0
+
+ y.mesh n=1 l=0.0
+ y.mesh n=9 l=4.0
+ y.mesh n=24 l=10.0
+ y.mesh n=29 l=15.0
+ y.mesh n=34 l=20.0
+
+ domain num=1 material=1
+ material num=1 silicon tn=20ns tp=20ns
+
+ electrode num=1 x.l=0.6 x.h=1.0 y.h=0.0
+ electrode num=2 y.l=20.0
+
+ doping gauss p.type conc=1.0e20 char.len=1.076 x.l=0.75 x.h=1.1 y.h=0.0
+ + lat.rotate ratio=0.1
+ doping unif n.type conc=1.0e14
+ doping gauss n.type conc=1.0e20 char.len=1.614 x.l=-0.1 x.h=1.1 y.l=20.0
+
+ models bgn srh auger conctau concmob fieldmob
.OPTION ACCT BYPASS=1
.TRAN 1NS 100NS
.PRINT TRAN v(3) I(VIN)
.END

36
tests/cider/jfet/jfet.cir Normal file
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Two-dimensional Junction Field-Effect Transistor (JFET)
VDD 1 0 0.5V
VGG 2 0 -1.0v AC 1V
VSS 3 0 0.0V
QJ1 1 2 3 M_NJF AREA=1
.MODEL M_NJF NBJT LEVEL=2
+ options jfet defw=10.0um
+ output dc.debug phin phip equ.psi vac.psi
+ x.mesh w=0.2 h.e=0.001 r=1.8
+ x.mesh w=0.8 h.s=0.001 h.m=0.1 r=2.0
+ x.mesh w=0.8 h.e=0.001 h.m=0.1 r=2.0
+ x.mesh w=0.2 h.s=0.001 r=1.8
+ y.mesh w=0.2 h.e=0.01 r=1.8
+ y.mesh w=0.8 h.s=0.01 h.m=0.1 r=1.8
+
+ domain num=1 mat=1
+ material num=1 silicon
+
+ elec num=1 x.l=0.0 x.h=0.0 y.l=0.0 y.h=1.0
+ elec num=2 x.l=0.5 x.h=1.5 y.l=0.0 y.h=0.0
+ elec num=3 x.l=2.0 x.h=2.0 y.l=0.0 y.h=1.0
+
+ doping unif n.type conc=3.0e15
+ doping unif p.type conc=2.0e17 x.l=0.2 x.h=1.8 y.h=0.2
+
+ models bgn srh auger conctau concmob fieldmob ^aval
.option acct bypass=1 temp=27
*.op
.dc vgg 0.0 -2.0001 -0.1
*.ac dec 10 1k 100g
.print i(vnn)
.end

59
tests/cider/mos/bootinv.cir Normal file
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NMOS Enhancement-Load Bootstrap Inverter
Vdd 1 0 5.0v
Vss 2 0 0.0v
Vin 5 0 0.0v PWL (0.0ns 5.0v) (1ns 0.0v) (10ns 0.0v) (11ns 5.0v)
+ (20ns 5.0v) (21ns 0.0v) (30ns 0.0v) (31ns 5.0v)
M1 1 1 3 2 M_NMOS w=5u
M2 1 3 4 4 M_NMOS w=5u
M3 4 5 2 2 M_NMOS w=5u
CL 4 0 0.1pf
CB 3 4 0.1pf
.model M_NMOS numos
+ x.mesh l=0.0 n=1
+ x.mesh l=0.6 n=4
+ x.mesh l=0.7 n=5
+ x.mesh l=1.0 n=7
+ x.mesh l=1.2 n=11
+ x.mesh l=3.2 n=21
+ x.mesh l=3.4 n=25
+ x.mesh l=3.7 n=27
+ x.mesh l=3.8 n=28
+ x.mesh l=4.4 n=31
+
+ y.mesh l=-.05 n=1
+ y.mesh l=0.0 n=5
+ y.mesh l=.05 n=9
+ y.mesh l=0.3 n=14
+ y.mesh l=2.0 n=19
+
+ region num=1 material=1 y.l=0.0
+ material num=1 silicon
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 init elec major
+ mobility material=1 init elec minor
+ mobility material=1 init hole major
+ mobility material=1 init hole minor
+
+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
+ material num=2 oxide
+
+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0
+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1
+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0
+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0
+
+ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0
+ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05
+ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2
+ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2
+
+ models concmob fieldmob
+ method ac=direct onec
.tran 0.2ns 40ns
.print v(4)
.options acct bypass=1 method=gear
.end

57
tests/cider/mos/charge.cir Normal file
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MOS charge pump
vin 4 0 dc 0v pulse 0 5 15ns 5ns 5ns 50ns 100ns
vdd 5 6 dc 0v pulse 0 5 25ns 5ns 5ns 50ns 100ns
vbb 0 7 dc 0v pulse 0 5 0ns 5ns 5ns 50ns 100ns
rd 6 2 10k
m1 5 4 3 7 mmod w=100um
vs 3 2 0
vc 2 1 0
c2 1 0 10pf
.ic v(3)=1.0
.tran 2ns 200ns
.options acct bypass=1
.print tran v(1) v(2)
.model mmod numos
+ x.mesh n=1 l=0
+ x.mesh n=3 l=0.4
+ x.mesh n=7 l=0.6
+ x.mesh n=15 l=1.4
+ x.mesh n=19 l=1.6
+ x.mesh n=21 l=2.0
+
+ y.mesh n=1 l=0
+ y.mesh n=4 l=0.015
+ y.mesh n=8 l=0.05
+ y.mesh n=12 l=0.25
+ y.mesh n=14 l=0.35
+ y.mesh n=17 l=0.5
+ y.mesh n=21 l=1.0
+
+ region num=1 material=1 y.l=0.015
+ material num=1 silicon
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+
+ region num=2 material=2 y.h=0.015 x.l=0.5 x.h=1.5
+ material num=2 oxide
+
+ elec num=1 ix.l=18 ix.h=21 iy.l=4 iy.h=4
+ elec num=2 ix.l=5 ix.h=17 iy.l=1 iy.h=1
+ elec num=3 ix.l=1 ix.h=4 iy.l=4 iy.h=4
+ elec num=4 ix.l=1 ix.h=21 iy.l=21 iy.h=21
+
+ doping unif n.type conc=1e18 x.l=0.0 x.h=0.5 y.l=0.015 y.h=0.25
+ doping unif n.type conc=1e18 x.l=1.5 x.h=2.0 y.l=0.015 y.h=0.25
+ doping unif p.type conc=1e15 x.l=0.0 x.h=2.0 y.l=0.015 y.h=1.0
+ doping unif p.type conc=1.3e17 x.l=0.5 x.h=1.5 y.l=0.015 y.h=0.05
+
+ models concmob fieldmob
+ method onec
.end

115
tests/cider/mos/cmosinv.cir Normal file
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CMOS Inverter
Vdd 1 0 5.0v
Vss 2 0 0.0v
X1 1 2 3 4 INV
Vin 3 0 2.5v
.SUBCKT INV 1 2 3 4
* Vdd Vss Vin Vout
M1 14 13 15 16 M_PMOS w=6.0u
M2 24 23 25 26 M_NMOS w=3.0u
Vgp 3 13 0.0v
Vdp 4 14 0.0v
Vsp 1 15 0.0v
Vbp 1 16 0.0v
Vgn 3 23 0.0v
Vdn 4 24 0.0v
Vsn 2 25 0.0v
Vbn 2 26 0.0v
.ENDS INV
.model M_NMOS numos
+ x.mesh l=0.0 n=1
+ x.mesh l=0.6 n=4
+ x.mesh l=0.7 n=5
+ x.mesh l=1.0 n=7
+ x.mesh l=1.2 n=11
+ x.mesh l=3.2 n=21
+ x.mesh l=3.4 n=25
+ x.mesh l=3.7 n=27
+ x.mesh l=3.8 n=28
+ x.mesh l=4.4 n=31
+
+ y.mesh l=-.05 n=1
+ y.mesh l=0.0 n=5
+ y.mesh l=.05 n=9
+ y.mesh l=0.3 n=14
+ y.mesh l=2.0 n=19
+
+ region num=1 material=1 y.l=0.0
+ material num=1 silicon
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+
+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
+ material num=2 oxide
+
+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0
+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1
+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0
+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0
+
+ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0
+ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05
+ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2
+ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2
+
+ models concmob fieldmob bgn srh conctau
+ method ac=direct onec
.model M_PMOS numos
+ x.mesh l=0.0 n=1
+ x.mesh l=0.6 n=4
+ x.mesh l=0.7 n=5
+ x.mesh l=1.0 n=7
+ x.mesh l=1.2 n=11
+ x.mesh l=3.2 n=21
+ x.mesh l=3.4 n=25
+ x.mesh l=3.7 n=27
+ x.mesh l=3.8 n=28
+ x.mesh l=4.4 n=31
+
+ y.mesh l=-.05 n=1
+ y.mesh l=0.0 n=5
+ y.mesh l=.05 n=9
+ y.mesh l=0.3 n=14
+ y.mesh l=2.0 n=19
+
+ region num=1 material=1 y.l=0.0
+ material num=1 silicon
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+
+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
+ material num=2 oxide
+
+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0
+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1
+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0
+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0
+
+ doping unif n.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0
+ doping unif p.type conc=3e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05
+ doping unif p.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2
+ doping unif p.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2
+
+ models concmob fieldmob bgn srh conctau
+ method ac=direct onec
*.tran 0.1ns 5ns
*.op
.dc Vin 0.0v 5.001v 0.05v
.print v(4)
.options acct bypass=1 method=gear
.end

55
tests/cider/mos/nmosinv.cir Normal file
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Resistive load NMOS inverter
vin 1 0 pwl 0 0.0 2ns 5
vdd 3 0 dc 5.0
rd 3 2 2.5k
m1 2 1 4 5 mmod w=10um
cl 2 0 2pf
vb 5 0 0
vs 4 0 0
.model mmod numos
+ x.mesh l=0.0 n=1
+ x.mesh l=0.6 n=4
+ x.mesh l=0.7 n=5
+ x.mesh l=1.0 n=7
+ x.mesh l=1.2 n=11
+ x.mesh l=3.2 n=21
+ x.mesh l=3.4 n=25
+ x.mesh l=3.7 n=27
+ x.mesh l=3.8 n=28
+ x.mesh l=4.4 n=31
+
+ y.mesh l=-.05 n=1
+ y.mesh l=0.0 n=5
+ y.mesh l=.05 n=9
+ y.mesh l=0.3 n=14
+ y.mesh l=2.0 n=19
+
+ region num=1 material=1 y.l=0.0
+ material num=1 silicon
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+
+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
+ material num=2 oxide
+
+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0
+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1
+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0
+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0
+
+ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0
+ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05
+ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2
+ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2
+
+ models concmob fieldmob
+ method ac=direct onec
.tran 0.2ns 30ns
.options acct bypass=1
.print tran v(1) v(2)
.end

59
tests/cider/mos/pass.cir Normal file
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Turnoff transient of pass transistor
M1 11 2 3 4 mmod w=20um
Cs 1 0 6.0pF
Cl 3 0 6.0pF
R1 3 6 200k
Vin 6 0 dc 0
Vdrn 1 11 dc 0
Vg 2 0 dc 5 pwl 0 5 0.1n 0 1 0
Vb 4 0 dc 0.0
.tran 0.05ns 0.2ns 0.0ns 0.05ns
.print tran v(1) i(Vdrn)
.ic v(1)=0 v(3)=0
.option acct bypass=1
.model mmod numos
+ x.mesh l=0.0 n=1
+ x.mesh l=0.6 n=4
+ x.mesh l=0.7 n=5
+ x.mesh l=1.0 n=7
+ x.mesh l=1.2 n=11
+ x.mesh l=3.2 n=21
+ x.mesh l=3.4 n=25
+ x.mesh l=3.7 n=27
+ x.mesh l=3.8 n=28
+ x.mesh l=4.4 n=31
+
+ y.mesh l=-.05 n=1
+ y.mesh l=0.0 n=5
+ y.mesh l=.05 n=9
+ y.mesh l=0.3 n=14
+ y.mesh l=2.0 n=19
+
+ region num=1 material=1 y.l=0.0
+ material num=1 silicon
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+
+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
+ material num=2 oxide
+
+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0
+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1
+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0
+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0
+
+ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0
+ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05
+ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2
+ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2
+
+ models concmob fieldmob
+ method ac=direct onec
.end

122
tests/cider/mos/ringosc.cir Normal file
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CMOS Ring Oscillator
Vdd 1 0 5.0v
Vss 2 0 0.0v
X1 1 2 3 4 INV
X2 1 2 4 5 INV
X3 1 2 5 3 INV
*X4 1 2 6 7 INV
*X5 1 2 7 8 INV
*X6 1 2 8 9 INV
*X7 1 2 9 3 INV
.IC V(3)=0.0v V(4)=2.5v V(5)=5.0v
* V(6)=0.0v V(7)=5.0v V(8)=0.0v V(9)=5.0v
Vin 3 0 2.5v
.SUBCKT INV 1 2 3 4
* Vdd Vss Vin Vout
M1 14 13 15 16 M_PMOS w=6.0u
M2 24 23 25 26 M_NMOS w=3.0u
Vgp 3 13 0.0v
Vdp 4 14 0.0v
Vsp 1 15 0.0v
Vbp 1 16 0.0v
Vgn 3 23 0.0v
Vdn 4 24 0.0v
Vsn 2 25 0.0v
Vbn 2 26 0.0v
.ENDS INV
.model M_NMOS numos
+ x.mesh l=0.0 n=1
+ x.mesh l=0.6 n=4
+ x.mesh l=0.7 n=5
+ x.mesh l=1.0 n=7
+ x.mesh l=1.2 n=11
+ x.mesh l=3.2 n=21
+ x.mesh l=3.4 n=25
+ x.mesh l=3.7 n=27
+ x.mesh l=3.8 n=28
+ x.mesh l=4.4 n=31
+
+ y.mesh l=-.05 n=1
+ y.mesh l=0.0 n=5
+ y.mesh l=.05 n=9
+ y.mesh l=0.3 n=14
+ y.mesh l=2.0 n=19
+
+ region num=1 material=1 y.l=0.0
+ material num=1 silicon
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+
+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
+ material num=2 oxide
+
+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0
+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1
+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0
+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0
+
+ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0
+ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05
+ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2
+ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2
+
+ models concmob fieldmob bgn srh conctau
+ method ac=direct onec
.model M_PMOS numos
+ x.mesh l=0.0 n=1
+ x.mesh l=0.6 n=4
+ x.mesh l=0.7 n=5
+ x.mesh l=1.0 n=7
+ x.mesh l=1.2 n=11
+ x.mesh l=3.2 n=21
+ x.mesh l=3.4 n=25
+ x.mesh l=3.7 n=27
+ x.mesh l=3.8 n=28
+ x.mesh l=4.4 n=31
+
+ y.mesh l=-.05 n=1
+ y.mesh l=0.0 n=5
+ y.mesh l=.05 n=9
+ y.mesh l=0.3 n=14
+ y.mesh l=2.0 n=19
+
+ region num=1 material=1 y.l=0.0
+ material num=1 silicon
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+
+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
+ material num=2 oxide
+
+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0
+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1
+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0
+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0
+
+ doping unif n.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0
+ doping unif p.type conc=3e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05
+ doping unif p.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2
+ doping unif p.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2
+
+ models concmob fieldmob bgn srh conctau
+ method ac=direct onec
.tran 0.1ns 5ns
.print v(4)
.options acct bypass=1 method=gear
.end

931
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**
* BICMOS.LIB: Library of models used in the 1.0 um CBiCMOS process
* Contains CIDER input descriptions as well as matching
* SPICE models for some of the CIDER models.
**
**
* One-dimensional models for a
* polysilicon emitter complementary bipolar process.
* The default device size is 1um by 1um (LxW)
**
.model M_NPN1D nbjt level=1
+ title One-Dimensional Numerical Bipolar
+ options base.depth=0.15 base.area=0.1 base.length=0.5 defa=1p
+ x.mesh loc=-0.2 n=1
+ x.mesh loc=0.0 n=51
+ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2
+ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2
+ domain num=1 material=1 x.l=0.0
+ domain num=2 material=2 x.h=0.0
+ material num=1 silicon
+ mobility mat=1 concmod=ct fieldmod=ct
+ material num=2 polysilicon
+ mobility mat=2 concmod=ct fieldmod=ct
+ doping gauss n.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047
+ doping gauss p.type conc=5e18 x.l=-0.2 x.h=0.0 char.len=0.100
+ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3
+ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100
+ models bgn srh auger conctau concmob fieldmob
+ method devtol=1e-12 ac=direct itlim=15
.model M_PNP1D nbjt level=1
+ title One-Dimensional Numerical Bipolar
+ options base.depth=0.2 base.area=0.1 base.length=0.5 defa=1p
+ x.mesh loc=-0.2 n=1
+ x.mesh loc=0.0 n=51
+ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2
+ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2
+ domain num=1 material=1 x.l=0.0
+ domain num=2 material=2 x.h=0.0
+ material num=1 silicon
+ mobility mat=1 concmod=ct fieldmod=ct
+ material num=2 polysilicon
+ mobility mat=2 concmod=ct fieldmod=ct
+ doping gauss p.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047
+ doping gauss n.type conc=5e17 x.l=-0.2 x.h=0.0 char.len=0.200
+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.3
+ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100
+ models bgn srh auger conctau concmob fieldmob
+ method devtol=1e-12 ac=direct itlim=15
**
* Two-dimensional models for a
* polysilicon emitter complementary bipolar process.
* The default device size is 1um by 1um (LxW)
**
.MODEL M_NPNS nbjt level=2
+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
+ * Since half the device is simulated, double the unit width to get
+ * 1.0 um emitter. Use a small mesh for this model.
+ options defw=2.0u
+ output stat
+
+ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0
+ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0
+
+ y.mesh l=-0.2 n=1
+ y.mesh l= 0.0 n=5
+ y.mesh w=0.10 h.e=0.004 h.m=0.05 r=2.5
+ y.mesh w=0.15 h.s=0.004 h.m=0.02 r=2.5
+ y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5
+
+ domain num=1 material=1 x.l=2.0 y.h=0.0
+ domain num=2 material=2 x.h=2.0 y.h=0.0
+ domain num=3 material=3 y.l=0.0
+ material num=1 polysilicon
+ material num=2 oxide
+ material num=3 silicon
+
+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3
+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2
+
+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
+ + char.l=0.047 lat.rotate
+ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
+ + char.l=0.100 lat.rotate
+ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
+ + char.l=0.100 lat.rotate ratio=0.7
+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
+ + char.l=0.100 lat.rotate
+
+ method ac=direct itlim=10
+ models bgn srh auger conctau concmob fieldmob
.MODEL M_NPN nbjt level=2
+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
+ * Since half the device is simulated, double the unit width to get
+ * 1.0 um emitter length. Uses a finer mesh in the X direction.
+ options defw=2.0u
+ output stat
+
+ x.mesh w=0.5 h.e=0.075 h.m=0.2 r=2.0
+ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0
+ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5
+ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5
+
+ y.mesh l=-0.2 n=1
+ y.mesh l= 0.0 n=5
+ y.mesh w=0.10 h.e=0.003 h.m=0.01 r=1.5
+ y.mesh w=0.15 h.s=0.003 h.m=0.02 r=1.5
+ y.mesh w=0.35 h.s=0.02 h.m=0.2 r=1.5
+ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5
+ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5
+
+ domain num=1 material=1 x.l=2.0 y.h=0.0
+ domain num=2 material=2 x.h=2.0 y.h=0.0
+ domain num=3 material=3 y.l=0.0
+ material num=1 polysilicon
+ material num=2 oxide
+ material num=3 silicon
+
+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3
+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2
+
+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
+ + char.l=0.047 lat.rotate
+ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
+ + char.l=0.100 lat.rotate
+ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
+ + char.l=0.100 lat.rotate ratio=0.7
+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
+ + char.l=0.100 lat.rotate
+
+ method ac=direct itlim=10
+ models bgn srh auger conctau concmob fieldmob
.MODEL M_PNPS nbjt level=2
+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
+ * Since half the device is simulated, double the unit width to get
+ * 1.0 um emitter length. Use a small mesh for this model.
+ options defw=2.0u
+ output stat
+
+ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0
+ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0
+
+ y.mesh l=-0.2 n=1
+ y.mesh l= 0.0 n=5
+ y.mesh w=0.12 h.e=0.004 h.m=0.05 r=2.5
+ y.mesh w=0.28 h.s=0.004 h.m=0.02 r=2.5
+ y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5
+
+ domain num=1 material=1 x.l=2.0 y.h=0.0
+ domain num=2 material=2 x.h=2.0 y.h=0.0
+ domain num=3 material=3 y.l=0.0
+ material num=1 polysilicon
+ material num=2 oxide
+ material num=3 silicon
+
+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3
+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2
+
+ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
+ + char.l=0.047 lat.rotate
+ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
+ + char.l=0.200 lat.rotate
+ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
+ + char.l=0.100 lat.rotate ratio=0.7
+ doping unif p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
+ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
+ + char.l=0.100 lat.rotate
+
+ method ac=direct itlim=10
+ models bgn srh auger conctau concmob fieldmob
.MODEL M_PNP nbjt level=2
+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
+ * Since half the device is simulated, double the unit width to get
+ * 1.0 um emitter length. Uses a finer mesh in the X direction.
+ options defw=2.0u
+ output stat
+
+ x.mesh w=0.5 h.e=0.075 h.m=0.2 r=2.0
+ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0
+ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5
+ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5
+
+ y.mesh l=-0.2 n=1
+ y.mesh l= 0.0 n=5
+ y.mesh w=0.12 h.e=0.003 h.m=0.01 r=1.5
+ y.mesh w=0.28 h.s=0.003 h.m=0.02 r=1.5
+ y.mesh w=0.20 h.s=0.02 h.m=0.2 r=1.5
+ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5
+ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5
+
+ domain num=1 material=1 x.l=2.0 y.h=0.0
+ domain num=2 material=2 x.h=2.0 y.h=0.0
+ domain num=3 material=3 y.l=0.0
+ material num=1 polysilicon
+ material num=2 oxide
+ material num=3 silicon
+
+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3
+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2
+
+ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
+ + char.l=0.047 lat.rotate
+ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
+ + char.l=0.200 lat.rotate
+ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
+ + char.l=0.100 lat.rotate ratio=0.7
+ doping unif p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
+ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
+ + char.l=0.100 lat.rotate
+
+ method ac=direct itlim=10
+ models bgn srh auger conctau concmob fieldmob
**
* Two-dimensional models for a
* complementary MOS process.
* Device models for 1um, 2um, 3um, 4um, 5um, 10um and 50um are provided.
**
.MODEL M_NMOS_1 numos
+ output stat
+
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
+
+ y.mesh l=-.0200 n=1
+ y.mesh l=0.0 n=6
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
+
+ region num=1 material=1 y.h=0.0
+ region num=2 material=2 y.l=0.0
+ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0
+ material num=1 oxide
+ material num=2 silicon
+
+ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0
+ elec num=2 x.l=1 x.h=2 iy.l=1 iy.h=1
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0
+
+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
+ + char.l=0.30
+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+ doping gauss n.type conc=4e17 x.l=2 x.h=3.1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss n.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+
+ contact num=2 workf=4.10
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
+ method ac=direct itlim=10 onec
.MODEL M_NMOS_2 numos
+ output stat
+
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0
+ x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
+
+ y.mesh l=-.0200 n=1
+ y.mesh l=0.0 n=6
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
+
+ region num=1 material=1 y.h=0.0
+ region num=2 material=2 y.l=0.0
+ interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0
+ material num=1 oxide
+ material num=2 silicon
+
+ elec num=1 x.l=3.5 x.h=4.1 y.l=0.0 y.h=0.0
+ elec num=2 x.l=1 x.h=3 iy.l=1 iy.h=1
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=4 x.l=-0.1 x.h=4.1 y.l=2.0 y.h=2.0
+
+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0
+ + char.l=0.30
+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1
+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+ doping gauss n.type conc=4e17 x.l=3 x.h=4.1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss n.type conc=1e20 x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+
+ contact num=2 workf=4.10
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
+ method ac=direct itlim=10 onec
.MODEL M_NMOS_3 numos
+ output stat
+
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0
+ x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
+
+ y.mesh l=-.0200 n=1
+ y.mesh l=0.0 n=6
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
+
+ region num=1 material=1 y.h=0.0
+ region num=2 material=2 y.l=0.0
+ interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0
+ material num=1 oxide
+ material num=2 silicon
+
+ elec num=1 x.l=4.5 x.h=5.1 y.l=0.0 y.h=0.0
+ elec num=2 x.l=1 x.h=4 iy.l=1 iy.h=1
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=4 x.l=-0.1 x.h=5.1 y.l=2.0 y.h=2.0
+
+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0
+ + char.l=0.30
+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1
+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+ doping gauss n.type conc=4e17 x.l=4 x.h=5.1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss n.type conc=1e20 x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+
+ contact num=2 workf=4.10
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
+ method ac=direct itlim=10 onec
.MODEL M_NMOS_4 numos
+ output stat
+
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0
+ x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
+
+ y.mesh l=-.0200 n=1
+ y.mesh l=0.0 n=6
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
+
+ region num=1 material=1 y.h=0.0
+ region num=2 material=2 y.l=0.0
+ interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0
+ material num=1 oxide
+ material num=2 silicon
+
+ elec num=1 x.l=5.5 x.h=6.1 y.l=0.0 y.h=0.0
+ elec num=2 x.l=1 x.h=5 iy.l=1 iy.h=1
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=4 x.l=-0.1 x.h=6.1 y.l=2.0 y.h=2.0
+
+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0
+ + char.l=0.30
+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1
+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+ doping gauss n.type conc=4e17 x.l=5 x.h=6.1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss n.type conc=1e20 x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+
+ contact num=2 workf=4.10
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
+ method ac=direct itlim=10 onec
.MODEL M_NMOS_5 numos
+ output stat
+
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0
+ x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
+
+ y.mesh l=-.0200 n=1
+ y.mesh l=0.0 n=6
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
+
+ region num=1 material=1 y.h=0.0
+ region num=2 material=2 y.l=0.0
+ interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0
+ material num=1 oxide
+ material num=2 silicon
+
+ elec num=1 x.l=6.5 x.h=7.1 y.l=0.0 y.h=0.0
+ elec num=2 x.l=1 x.h=6 iy.l=1 iy.h=1
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=4 x.l=-0.1 x.h=7.1 y.l=2.0 y.h=2.0
+
+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0
+ + char.l=0.30
+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1
+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+ doping gauss n.type conc=4e17 x.l=6 x.h=7.1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss n.type conc=1e20 x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+
+ contact num=2 workf=4.10
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
+ method ac=direct itlim=10 onec
.MODEL M_NMOS_10 numos
+ output stat
+
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0
+ x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
+
+ y.mesh l=-.0200 n=1
+ y.mesh l=0.0 n=6
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
+
+ region num=1 material=1 y.h=0.0
+ region num=2 material=2 y.l=0.0
+ interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0
+ material num=1 oxide
+ material num=2 silicon
+
+ elec num=1 x.l=11.5 x.h=12.1 y.l=0.0 y.h=0.0
+ elec num=2 x.l=1 x.h=11 iy.l=1 iy.h=1
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=4 x.l=-0.1 x.h=12.1 y.l=2.0 y.h=2.0
+
+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0
+ + char.l=0.30
+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1
+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+ doping gauss n.type conc=4e17 x.l=11 x.h=12.1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss n.type conc=1e20 x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+
+ contact num=2 workf=4.10
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
+ method ac=direct itlim=10 onec
.MODEL M_NMOS_50 numos
+ output stat
+
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0
+ x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
+
+ y.mesh l=-.0200 n=1
+ y.mesh l=0.0 n=6
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
+
+ region num=1 material=1 y.h=0.0
+ region num=2 material=2 y.l=0.0
+ interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0
+ material num=1 oxide
+ material num=2 silicon
+
+ elec num=1 x.l=51.5 x.h=52.1 y.l=0.0 y.h=0.0
+ elec num=2 x.l=1 x.h=51 iy.l=1 iy.h=1
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=4 x.l=-0.1 x.h=52.1 y.l=2.0 y.h=2.0
+
+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0
+ + char.l=0.30
+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1
+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+ doping gauss n.type conc=4e17 x.l=51 x.h=52.1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss n.type conc=1e20 x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+
+ contact num=2 workf=4.10
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
+ method ac=direct itlim=10 onec
.MODEL M_PMOS_1 numos
+ output stat
+
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
+
+ y.mesh l=-.0200 n=1
+ y.mesh l=0.0 n=6
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
+
+ region num=1 material=1 y.h=0.0
+ region num=2 material=2 y.l=0.0
+ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0
+ material num=1 oxide
+ material num=2 silicon
+
+ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0
+ elec num=2 x.l=1 x.h=2 iy.l=1 iy.h=1
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0
+
+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
+ + char.l=0.30
+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+ doping gauss p.type conc=4e17 x.l=2 x.h=3.1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss p.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+
+ contact num=2 workf=5.29
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
+ method ac=direct itlim=10 onec
.MODEL M_PMOS_2 numos
+ output stat
+
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0
+ x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
+
+ y.mesh l=-.0200 n=1
+ y.mesh l=0.0 n=6
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
+
+ region num=1 material=1 y.h=0.0
+ region num=2 material=2 y.l=0.0
+ interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0
+ material num=1 oxide
+ material num=2 silicon
+
+ elec num=1 x.l=3.5 x.h=4.1 y.l=0.0 y.h=0.0
+ elec num=2 x.l=1 x.h=3 iy.l=1 iy.h=1
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=4 x.l=-0.1 x.h=4.1 y.l=2.0 y.h=2.0
+
+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0
+ + char.l=0.30
+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1
+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+ doping gauss p.type conc=4e17 x.l=3 x.h=4.1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss p.type conc=1e20 x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+
+ contact num=2 workf=5.29
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
+ method ac=direct itlim=10 onec
.MODEL M_PMOS_3 numos
+ output stat
+
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0
+ x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
+
+ y.mesh l=-.0200 n=1
+ y.mesh l=0.0 n=6
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
+
+ region num=1 material=1 y.h=0.0
+ region num=2 material=2 y.l=0.0
+ interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0
+ material num=1 oxide
+ material num=2 silicon
+
+ elec num=1 x.l=4.5 x.h=5.1 y.l=0.0 y.h=0.0
+ elec num=2 x.l=1 x.h=4 iy.l=1 iy.h=1
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=4 x.l=-0.1 x.h=5.1 y.l=2.0 y.h=2.0
+
+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0
+ + char.l=0.30
+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1
+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+ doping gauss p.type conc=4e17 x.l=4 x.h=5.1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss p.type conc=1e20 x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+
+ contact num=2 workf=5.29
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
+ method ac=direct itlim=10 onec
.MODEL M_PMOS_4 numos
+ output stat
+
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0
+ x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
+
+ y.mesh l=-.0200 n=1
+ y.mesh l=0.0 n=6
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
+
+ region num=1 material=1 y.h=0.0
+ region num=2 material=2 y.l=0.0
+ interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0
+ material num=1 oxide
+ material num=2 silicon
+
+ elec num=1 x.l=5.5 x.h=6.1 y.l=0.0 y.h=0.0
+ elec num=2 x.l=1 x.h=5 iy.l=1 iy.h=1
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=4 x.l=-0.1 x.h=6.1 y.l=2.0 y.h=2.0
+
+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0
+ + char.l=0.30
+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1
+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+ doping gauss p.type conc=4e17 x.l=5 x.h=6.1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss p.type conc=1e20 x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+
+ contact num=2 workf=5.29
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
+ method ac=direct itlim=10 onec
.MODEL M_PMOS_5 numos
+ output stat
+
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0
+ x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
+
+ y.mesh l=-.0200 n=1
+ y.mesh l=0.0 n=6
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
+
+ region num=1 material=1 y.h=0.0
+ region num=2 material=2 y.l=0.0
+ interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0
+ material num=1 oxide
+ material num=2 silicon
+
+ elec num=1 x.l=6.5 x.h=7.1 y.l=0.0 y.h=0.0
+ elec num=2 x.l=1 x.h=6 iy.l=1 iy.h=1
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=4 x.l=-0.1 x.h=7.1 y.l=2.0 y.h=2.0
+
+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0
+ + char.l=0.30
+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1
+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+ doping gauss p.type conc=4e17 x.l=6 x.h=7.1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss p.type conc=1e20 x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+
+ contact num=2 workf=5.29
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
+ method ac=direct itlim=10 onec
.MODEL M_PMOS_10 numos
+ output stat
+
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0
+ x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
+
+ y.mesh l=-.0200 n=1
+ y.mesh l=0.0 n=6
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
+
+ region num=1 material=1 y.h=0.0
+ region num=2 material=2 y.l=0.0
+ interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0
+ material num=1 oxide
+ material num=2 silicon
+
+ elec num=1 x.l=11.5 x.h=12.1 y.l=0.0 y.h=0.0
+ elec num=2 x.l=1 x.h=11 iy.l=1 iy.h=1
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=4 x.l=-0.1 x.h=12.1 y.l=2.0 y.h=2.0
+
+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0
+ + char.l=0.30
+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1
+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+ doping gauss p.type conc=4e17 x.l=11 x.h=12.1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss p.type conc=1e20 x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+
+ contact num=2 workf=5.29
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
+ method ac=direct itlim=10 onec
.MODEL M_PMOS_50 numos
+ output stat
+
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0
+ x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
+
+ y.mesh l=-.0200 n=1
+ y.mesh l=0.0 n=6
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
+
+ region num=1 material=1 y.h=0.0
+ region num=2 material=2 y.l=0.0
+ interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0
+ material num=1 oxide
+ material num=2 silicon
+
+ elec num=1 x.l=51.5 x.h=52.1 y.l=0.0 y.h=0.0
+ elec num=2 x.l=1 x.h=51 iy.l=1 iy.h=1
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
+ elec num=4 x.l=-0.1 x.h=52.1 y.l=2.0 y.h=2.0
+
+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0
+ + char.l=0.30
+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1
+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+ doping gauss p.type conc=4e17 x.l=51 x.h=52.1 y.l=0.0 y.h=0.0
+ + char.l=0.16 lat.rotate ratio=0.65
+ doping gauss p.type conc=1e20 x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08
+ + char.l=0.03 lat.rotate ratio=0.65
+
+ contact num=2 workf=5.29
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
+ method ac=direct itlim=10 onec
**
* BSIM1 NMOS and PMOS 1.0 \um models.
* Gummel-Poon bipolar models.
**
.model M_NSIM_1 nmos level=4
+vfb= -1.1908
+phi= .8399
+k1= 1.5329
+k2= 193.7322m
+eta= 2m
+muz= 746.0
+u0= 90.0m
+x2mz= 10.1429
+x2e= -2.5m
+x3e= 0.2m
+x2u0= -10.0m
+mus= 975.0
+u1= .20
+x2ms= 0.0
+x2u1= 0.0
+x3ms= 10
+x3u1= 5.0m
+tox=2.00000e-02
+cgdo=2.0e-10
+cgso=2.0e-10
+cgbo=0.0
+temp= 27
+vdd= 7.0
+xpart
+n0= 1.5686
+nb= 94.6392m
+nd=0.00000e+00
+rsh=30.0 cj=7.000e-004 cjsw=4.20e-010
+js=1.00e-008 pb=0.700e000
+pbsw=0.8000e000 mj=0.5 mjsw=0.33
+wdf=0 dell=0.20u
.model M_PSIM_1 pmos level=4
+vfb= -1.3674
+phi= .8414
+k1= 1.5686
+k2= 203m
+eta= 2m
+muz= 340.0
+u0= 35.0m
+x2mz= 6.0
+x2e= 0.0
+x3e= -0.2m
+x2u0= -15.0m
+mus= 440.0
+u1= .38
+x2ms= 0.0
+x2u1= 0.0
+x3ms= -20
+x3u1= -10.0m
+tox=2.00000e-02
+cgdo=2.0e-10
+cgso=2.0e-10
+cgbo=0.0
+temp= 27
+vdd= 5.0
+xpart
+n0= 1.5686
+nb= 94.6392m
+nd=0.00000e+00
+rsh=80.0 cj=7.000e-004 cjsw=4.20e-010
+js=1.00e-008 pb=0.700e000
+pbsw=0.8000e000 mj=0.5 mjsw=0.33
+wdf=0 dell=0.17u
.model M_GNPN npn
+ is=1.3e-16
+ nf=1.00 bf=262.5 ikf=25mA vaf=20v
+ nr=1.00 br=97.5 ikr=0.5mA var=1.8v
+ rc=20.0
+ re=0.09
+ rb=15.0
+ ise=4.0e-16 ne=2.1
+ isc=7.2e-17 nc=2.0
+ tf=9.4ps itf=26uA xtf=0.5
+ tr=10ns
+ cje=89.44fF vje=0.95 mje=0.5
+ cjc=12.82fF vjc=0.73 mjc=0.49
.model M_GPNP pnp
+ is=5.8e-17
+ nf=1.001 bf=96.4 ikf=12mA vaf=29v
+ nr=1.0 br=17.3 ikr=0.2mA var=2.0v
+ rc=50.0
+ re=0.17
+ rb=20.0
+ ise=6.8e-17 ne=2.0
+ isc=9.0e-17 nc=2.1
+ tf=27.4ps itf=26uA xtf=0.5
+ tr=10ns
+ cje=55.36fF vje=0.95 mje=0.58
+ cjc=11.80fF vjc=0.72 mjc=0.46

26
tests/cider/parallel/bicmpd.cir Normal file
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BICMOS INVERTER PULLDOWN CIRCUIT
VSS 2 0 0V
VIN 3 2 0V (PULSE 0.0V 4.2V 0NS 1NS 1NS 9NS 20NS)
M1 8 3 5 11 M_NMOS_1 W=4U L=1U
VD 4 8 0V
VBK 11 2 0V
Q1 10 7 9 M_NPNS AREA=8
VC 4 10 0V
VB 5 7 0V
VE 9 2 0V
CL 4 6 1PF
VL 6 2 0V
.IC V(10)=5.0V V(7)=0.0V
.TRAN 0.1NS 5NS 0NS 0.1NS
.PLOT TRAN I(VIN)
.INCLUDE BICMOS.LIB
.OPTIONS ACCT BYPASS=1
.END

24
tests/cider/parallel/bicmpu.cir Normal file
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BICMOS INVERTER PULLUP CIRCUIT
VDD 1 0 5.0V
VSS 2 0 0.0V
VIN 3 0 0.75V
VC 1 11 0.0V
VB 5 15 0.0V
Q1 11 15 4 M_NPNS AREA=8
M1 5 3 1 1 M_PMOS_1 W=10U L=1U
CL 4 0 5.0PF
.IC V(4)=0.75V V(5)=0.0V
.INCLUDE BICMOS.LIB
.TRAN 0.5NS 4.0NS
.PRINT TRAN V(3) V(4)
.OPTION ACCT BYPASS=1
.END

34
tests/cider/parallel/clkfeed.cir Normal file
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SWITCHED CURRENT CELL - CLOCK FEEDTHROUGH
VDD 1 0 5.0V
VSS 2 0 0.0V
IIN 13 0 0.0
VIN 13 3 0.0
VL 4 0 2.5V
VCK 6 0 5.0V PULSE 5.0V 0.0V 5.0NS 5NS 5NS 20NS 50NS
M1 3 3 2 2 M_NMOS_5 W=5U L=5U
M2 4 5 2 2 M_NMOS_5 W=10U L=5U
M3 23 26 25 22 M_NMOS_5 W=5U L=5U
RLK1 3 0 100G
RLK2 5 0 100G
VD 3 23 0.0V
VG 6 26 0.0V
VS 5 25 0.0V
VB 2 22 0.0V
M4 7 7 1 1 M_PMOS_IDEAL W=100U L=1U
M5 3 7 1 1 M_PMOS_IDEAL W=100U L=1U
M6 4 7 1 1 M_PMOS_IDEAL W=200U L=1U
IREF 7 0 50UA
****** MODELS ******
.MODEL M_PMOS_IDEAL PMOS VTO=-1.0V KP=100U
.INCLUDE BICMOS.LIB
.TRAN 0.1NS 50NS
.OPTIONS ACCT BYPASS=1 METHOD=GEAR
.END

29
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CMOS 2-STAGE OPERATIONAL AMPLIFIER
VDD 1 0 2.5V
VSS 2 0 -2.5V
IBIAS 9 0 100UA
VPL 3 0 0.0V AC 0.5V
VMI 4 0 0.0V AC 0.5V 180
M1 6 3 5 5 M_PMOS_1 W=15U L=1U
M2 7 4 5 5 M_PMOS_1 W=15U L=1U
M3 6 6 2 2 M_NMOS_1 W=7.5U L=1U
M4 7 6 2 2 M_NMOS_1 W=7.5U L=1U
M5 8 7 2 2 M_NMOS_1 W=15U L=1U
M6 9 9 1 1 M_PMOS_1 W=15U L=1U
M7 5 9 1 1 M_PMOS_1 W=15U L=1U
M8 8 9 1 1 M_PMOS_1 W=15U L=1U
*CC 7 8 0.1PF
.INCLUDE BICMOS.LIB
*.OP
*.AC DEC 10 1K 100G
.DC VPL -5MV 5MV 0.1MV
.OPTIONS ACCT BYPASS=1 METHOD=GEAR
.END

30
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ECL INVERTER
*** (FROM MEINERZHAGEN ET AL.)
VCC 1 0 0.0V
VEE 2 0 -5.2V
VIN 3 0 -1.25V
VRF 4 0 -1.25V
*** INPUT STAGE
Q1 5 3 9 M_NPNS AREA=8
Q2 6 4 9 M_NPNS AREA=8
R1 1 5 662
R2 1 6 662
R3 9 2 2.65K
*** OUTPUT BUFFERS
Q3 1 5 7 M_NPNS AREA=8
Q4 1 6 8 M_NPNS AREA=8
R4 7 2 4.06K
R5 8 2 4.06K
*** MODEL LIBRARY
.INCLUDE BICMOS.LIB
.DC VIN -2.00 0.001 0.05
.PLOT DC V(7) V(8)
.OPTIONS ACCT BYPASS=1
.END

19
tests/cider/parallel/ecpal.cir Normal file
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EMITTER COUPLED PAIR WITH ACTIVE LOAD
VCC 1 0 5V
VEE 2 0 0V
VINP 4 0 2.99925V AC 0.5V
VINM 7 0 3V AC 0.5V 180
IEE 5 2 0.1MA
Q1 3 4 5 M_NPNS AREA=8
Q2 6 7 5 M_NPNS AREA=8
Q3 3 3 1 M_PNPS AREA=8
Q4 6 3 1 M_PNPS AREA=8
.AC DEC 10 10K 100G
.PLOT AC VDB(6)
.INCLUDE BICMOS.LIB
.OPTIONS ACCT RELTOL=1E-6
.END

10
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\section*{BICMPD Benchmark}
\section*{BICMPU Benchmark}
\section*{CLKFEED Benchmark}
\section*{CMOSAMP Benchmark}
\section*{ECLINV Benchmark}
\section*{ECPAL Benchmark}
\section*{GMAMP Benchmark}
\section*{LATCH Benchmark}
\section*{PPEF Benchmarks}
\section*{RINGOSC Benchmarks}

34
tests/cider/parallel/gmamp.cir Normal file
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BICMOS 3-STAGE AMPLIFIER
*** IN GRAY & MEYER, 3RD ED. P.266, PROB. 3.12, 8.19
VDD 1 0 5.0V
VSS 2 0 0.0V
*** VOLTAGE INPUT
*VIN 13 0 0.0V AC 1V
*CIN 13 3 1UF
*** CURRENT INPUT
IIN 3 0 0.0 AC 1.0
M1 4 3 2 2 M_NMOS_1 W=300U L=1U
M2 7 7 2 2 M_NMOS_1 W=20U L=1U
Q1 6 5 4 M_NPNS AREA=40
Q2 5 5 7 M_NPNS AREA=40
Q3 1 6 8 M_NPNS AREA=40
RL1 1 4 1K
RL2 1 6 10K
RB1 1 5 10K
RL3 8 2 1K
RF1 3 8 30K
*** NUMERICAL MODEL LIBRARY ***
.INCLUDE BICMOS.LIB
.AC DEC 10 100KHZ 100GHZ
.PLOT AC VDB(8)
.OPTIONS ACCT BYPASS=1 KEEPOPINFO
.END

46
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STATIC LATCH
*** IC=1MA, RE6=3K
*** SPICE ORIGINAL 1-7-80, CIDER REVISED 4-16-93
*** BIAS CIRCUIT
*** RESISTORS
RCC2 6 8 3.33K
REE2 9 0 200
*** TRANSISTORS
Q1 6 8 4 M_NPN1D AREA=8
Q2 8 4 9 M_NPN1D AREA=8
*** MODELS
.INCLUDE BICMOS.LIB
*** SOURCES
VCC 6 0 5V
VREF 3 0 2.5V
VRSET 1 0 PULSE(2V 3V 0.1NS 0.1NS 0.1NS 0.9NS 4NS)
VSET 7 0 PULSE(2V 3V 2.1NS 0.1NS 0.1NS 0.9NS 4NS)
*** LATCH
X1 1 2 3 4 5 6 ECLNOR2
X2 5 7 3 4 2 6 ECLNOR2
*** SUBCIRCUITS
.SUBCKT ECLNOR2 1 2 3 4 5 6
** RESISTORS
RS 6 11 520
RC2 11 10 900
RE4 12 0 200
RE6 5 0 6K
** TRANSISTORS
Q1 9 1 8 M_NPN1D AREA=8
Q2 9 2 8 M_NPN1D AREA=8
Q3 11 3 8 M_NPN1D AREA=8
Q4 8 4 12 M_NPN1D AREA=8
Q5 10 10 9 M_NPN1D AREA=8
Q6 6 9 5 M_NPN1D AREA=8
.ENDS ECLNOR2
*** CONTROL CARDS
.TRAN 0.01NS 8NS
.PRINT TRAN V(1) V(7) V(5) V(2)
.OPTIONS ACCT BYPASS=1
.END

25
tests/cider/parallel/ppef.1d.cir Normal file
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PUSH-PULL EMITTER FOLLOWER - ONE-DIMENSIONAL MODELS
VCC 1 0 5.0V
VEE 2 0 -5.0V
VIN 3 0 0.0V (SIN 0.0V 0.1V 1KHZ) AC 1
VBU 13 3 0.7V
VBL 3 23 0.7V
RL 4 44 50
VLD 44 0 0V
Q1 5 13 4 M_NPN1D AREA=40
Q2 4 5 1 M_PNP1D AREA=200
Q3 6 23 4 M_PNP1D AREA=100
Q4 4 6 2 M_NPN1D AREA=80
.INCLUDE BICMOS.LIB
.TRAN 0.01MS 1.00001MS 0US 0.01MS
.PLOT TRAN V(4)
.OPTIONS ACCT BYPASS=1 TEMP=26.85OC RELTOL=1E-5
.END

25
tests/cider/parallel/ppef.2d.cir Normal file
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PUSH-PULL EMITTER FOLLOWER - TWO-DIMENSIONAL MODELS
VCC 1 0 5.0V
VEE 2 0 -5.0V
VIN 3 0 0.0V (SIN 0.0V 0.1V 1KHZ) AC 1
VBU 13 3 0.7V
VBL 3 23 0.7V
RL 4 44 50
VLD 44 0 0V
Q1 5 13 4 M_NPNS AREA=40
Q2 4 5 1 M_PNPS AREA=200
Q3 6 23 4 M_PNPS AREA=100
Q4 4 6 2 M_NPNS AREA=80
.INCLUDE BICMOS.LIB
.TRAN 0.01MS 1.00001MS 0US 0.01MS
.PLOT TRAN V(4)
.OPTIONS ACCT BYPASS=1 TEMP=26.85OC RELTOL=1E-5
.END

3
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This directory contains the additional CIDER parallel-version benchmarks
used in the thesis "Design-Oriented Mixed-Level Circuit and Device Simulation"
by David A. Gates.

39
tests/cider/parallel/ringosc.1u.cir Normal file
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CMOS RING OSCILLATOR - 1UM DEVICES
VDD 1 0 5.0V
VSS 2 0 0.0V
X1 1 2 3 4 INV
X2 1 2 4 5 INV
X3 1 2 5 6 INV
X4 1 2 6 7 INV
X5 1 2 7 8 INV
X6 1 2 8 9 INV
X7 1 2 9 3 INV
.IC V(3)=0.0V V(4)=2.5V V(5)=5.0V
+ V(6)=0.0V V(7)=5.0V V(8)=0.0V V(9)=5.0V
.SUBCKT INV 1 2 3 4
* VDD VSS VIN VOUT
M1 14 13 15 16 M_PMOS_1 W=6.0U
M2 24 23 25 26 M_NMOS_1 W=3.0U
VGP 3 13 0.0V
VDP 4 14 0.0V
VSP 1 15 0.0V
VBP 1 16 0.0V
VGN 3 23 0.0V
VDN 4 24 0.0V
VSN 2 25 0.0V
VBN 2 26 0.0V
.ENDS INV
.INCLUDE BICMOS.LIB
.TRAN 0.1NS 1NS
.PRINT TRAN V(3) V(4) V(5)
.OPTIONS ACCT BYPASS=1 METHOD=GEAR
.END

114
tests/cider/parallel/ringosc.2u.cir Normal file
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CMOS RING OSCILLATOR - 2UM DEVICES
VDD 1 0 5.0V
VSS 2 0 0.0V
X1 1 2 3 4 INV
X2 1 2 4 5 INV
X3 1 2 5 6 INV
X4 1 2 6 7 INV
X5 1 2 7 8 INV
X6 1 2 8 9 INV
X7 1 2 9 3 INV
.IC V(3)=0.0V V(4)=2.5V V(5)=5.0V V(6)=0.0V
+ V(7)=5.0V V(8)=0.0V V(9)=5.0V
.SUBCKT INV 1 2 3 4
* VDD VSS VIN VOUT
M1 14 13 15 16 M_PMOS W=6.0U
M2 24 23 25 26 M_NMOS W=3.0U
VGP 3 13 0.0V
VDP 4 14 0.0V
VSP 1 15 0.0V
VBP 1 16 0.0V
VGN 3 23 0.0V
VDN 4 24 0.0V
VSN 2 25 0.0V
VBN 2 26 0.0V
.ENDS INV
.MODEL M_NMOS NUMOS
+ X.MESH L=0.0 N=1
+ X.MESH L=0.6 N=4
+ X.MESH L=0.7 N=5
+ X.MESH L=1.0 N=7
+ X.MESH L=1.2 N=11
+ X.MESH L=3.2 N=21
+ X.MESH L=3.4 N=25
+ X.MESH L=3.7 N=27
+ X.MESH L=3.8 N=28
+ X.MESH L=4.4 N=31
+
+ Y.MESH L=-.05 N=1
+ Y.MESH L=0.0 N=5
+ Y.MESH L=.05 N=9
+ Y.MESH L=0.3 N=14
+ Y.MESH L=2.0 N=19
+
+ REGION NUM=1 MATERIAL=1 Y.L=0.0
+ MATERIAL NUM=1 SILICON
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+
+ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
+ MATERIAL NUM=2 OXIDE
+
+ ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0
+ ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1
+ ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0
+ ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0
+
+ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0
+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05
+ DOPING UNIF N.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2
+ DOPING UNIF N.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2
+
+ MODELS CONCMOB FIELDMOB BGN SRH CONCTAU
+ METHOD AC=DIRECT ONEC
+ OUTPUT ^ALL.DEBUG
.MODEL M_PMOS NUMOS
+ X.MESH L=0.0 N=1
+ X.MESH L=0.6 N=4
+ X.MESH L=0.7 N=5
+ X.MESH L=1.0 N=7
+ X.MESH L=1.2 N=11
+ X.MESH L=3.2 N=21
+ X.MESH L=3.4 N=25
+ X.MESH L=3.7 N=27
+ X.MESH L=3.8 N=28
+ X.MESH L=4.4 N=31
+
+ Y.MESH L=-.05 N=1
+ Y.MESH L=0.0 N=5
+ Y.MESH L=.05 N=9
+ Y.MESH L=0.3 N=14
+ Y.MESH L=2.0 N=19
+
+ REGION NUM=1 MATERIAL=1 Y.L=0.0
+ MATERIAL NUM=1 SILICON
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+
+ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
+ MATERIAL NUM=2 OXIDE
+
+ ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0
+ ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1
+ ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0
+ ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0
+
+ DOPING UNIF N.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0
+ DOPING UNIF P.TYPE CONC=3E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05
+ DOPING UNIF P.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2
+ DOPING UNIF P.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2
+
+ MODELS CONCMOB FIELDMOB BGN SRH CONCTAU
+ METHOD AC=DIRECT ONEC
+ OUTPUT ^ALL.DEBUG
.TRAN 0.1NS 5.0NS
.PRINT V(4)
.OPTIONS ACCT BYPASS=1 METHOD=GEAR
.END

30
tests/cider/resistor/gaasres.cir Normal file
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Gallium Arsenide Resistor
* This transient simulation demonstrates the effects of velocity overshoot
* and velocity saturation at high lateral electric fields.
* Do not try to do DC analysis of this resistor. It will not converge
* because of the peculiar characteristics of the GaAs velocity-field
* relation. In some cases, problems can arise in transient simulation
* as well.
VPP 1 0 1v PWL 0s 0.0v 10s 1v
VNN 2 0 0.0v
D1 1 2 M_RES AREA=1
.MODEL M_RES numd level=1
+ options resistor defa=1p
+ x.mesh loc=0.0 num=1
+ x.mesh loc=1.0 num=101
+ domain num=1 material=1
+ material num=1 gaas
+ doping unif n.type conc=2.5e16
+ models fieldmob srh auger conctau
+ method ac=direct
*.OP
*.DC VPP 0.0v 10.01v 0.1v
.TRAN 1s 10.001s 0s 0.1s
.PRINT I(VPP)
.OPTION ACCT BYPASS=1
.END

26
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Silicon Resistor
* This simulation demonstrates the effects of velocity saturation at
* high lateral electric fields.
VPP 1 0 10v PWL 0s 0.0v 100s 10v
VNN 2 0 0.0v
D1 1 2 M_RES AREA=1
.MODEL M_RES numd level=1
+ options resistor defa=1p
+ x.mesh loc=0.0 num=1
+ x.mesh loc=1.0 num=101
+ domain num=1 material=1
+ material num=1 silicon
+ doping unif n.type conc=2.5e16
+ models bgn srh conctau auger concmob fieldmob
+ method ac=direct
*.OP
.DC VPP 0.0v 10.01v 0.1v
*.TRAN 1s 100.001s 0s 0.2s
.PRINT I(VPP)
.OPTION ACCT BYPASS=1 RELTOL=1e-12
.END

30
tests/cider/serial/astable.cir Normal file
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ASTABLE MULTIVIBRATOR
VIN 5 0 DC 0 PULSE(0 5 0 1US 1US 100US 100US)
VCC 6 0 5.0
RC1 6 1 1K
RC2 6 2 1K
RB1 6 3 30K
RB2 5 4 30K
C1 1 4 150PF
C2 2 3 150PF
Q1 1 3 0 QMOD AREA = 100P
Q2 2 4 0 QMOD AREA = 100P
.OPTION ACCT BYPASS=1
.TRAN 0.05US 8US 0US 0.05US
.PRINT TRAN V(1) V(2) V(3) V(4)
.MODEL QMOD NBJT LEVEL=1
+ X.MESH NODE=1 LOC=0.0
+ X.MESH NODE=61 LOC=3.0
+ REGION NUM=1 MATERIAL=1
+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
.END

53
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MOS CHARGE PUMP
VIN 4 0 DC 0V PULSE 0 5 15NS 5NS 5NS 50NS 100NS
VDD 5 6 DC 0V PULSE 0 5 25NS 5NS 5NS 50NS 100NS
VBB 0 7 DC 0V PULSE 0 5 0NS 5NS 5NS 50NS 100NS
RD 6 2 10K
M1 5 4 3 7 MMOD W=100UM
VS 3 2 0
VC 2 1 0
C2 1 0 10PF
.IC V(3)=1.0
.TRAN 2NS 200NS
.OPTIONS ACCT BYPASS=1
.PRINT TRAN V(1) V(2)
.MODEL MMOD NUMOS
+ X.MESH N=1 L=0
+ X.MESH N=3 L=0.4
+ X.MESH N=7 L=0.6
+ X.MESH N=15 L=1.4
+ X.MESH N=19 L=1.6
+ X.MESH N=21 L=2.0
+
+ Y.MESH N=1 L=0
+ Y.MESH N=4 L=0.015
+ Y.MESH N=8 L=0.05
+ Y.MESH N=12 L=0.25
+ Y.MESH N=14 L=0.35
+ Y.MESH N=17 L=0.5
+ Y.MESH N=21 L=1.0
+
+ REGION NUM=1 MATERIAL=1 Y.L=0.015
+ MATERIAL NUM=1 SILICON
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+
+ REGION NUM=2 MATERIAL=2 Y.H=0.015 X.L=0.5 X.H=1.5
+ MATERIAL NUM=2 OXIDE
+
+ ELEC NUM=1 IX.L=18 IX.H=21 IY.L=4 IY.H=4
+ ELEC NUM=2 IX.L=5 IX.H=17 IY.L=1 IY.H=1
+ ELEC NUM=3 IX.L=1 IX.H=4 IY.L=4 IY.H=4
+ ELEC NUM=4 IX.L=1 IX.H=21 IY.L=21 IY.H=21
+
+ DOPING UNIF N.TYPE CONC=1E18 X.L=0.0 X.H=0.5 Y.L=0.015 Y.H=0.25
+ DOPING UNIF N.TYPE CONC=1E18 X.L=1.5 X.H=2.0 Y.L=0.015 Y.H=0.25
+ DOPING UNIF P.TYPE CONC=1E15 X.L=0.0 X.H=2.0 Y.L=0.015 Y.H=1.0
+ DOPING UNIF P.TYPE CONC=1.3E17 X.L=0.5 X.H=1.5 Y.L=0.015 Y.H=0.05
+
+ MODELS CONCMOB FIELDMOB
+ METHOD ONEC
.END

29
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COLPITT'S OSCILLATOR CIRCUIT
R1 1 0 1
Q1 2 1 3 QMOD AREA = 100P
VCC 4 0 5
RL 4 2 750
C1 2 3 500P
C2 4 3 4500P
L1 4 2 5UH
RE 3 6 4.65K
VEE 6 0 DC -15 PWL 0 -15 1E-9 -10
.TRAN 30N 12U
.PRINT TRAN V(2)
.MODEL QMOD NBJT LEVEL=1
+ X.MESH NODE=1 LOC=0.0
+ X.MESH NODE=61 LOC=3.0
+ REGION NUM=1 MATERIAL=1
+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
.OPTIONS ACCT BYPASS=1
.END

30
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DIODE BRIDGE RECTIFIER
VLINE 3 4 0.0V SIN 0V 10V 60HZ
VGRND 2 0 0.0V
D1 3 1 M_PN AREA=100
D2 4 1 M_PN AREA=100
D3 2 3 M_PN AREA=100
D4 2 4 M_PN AREA=100
RL 1 2 1.0K
.MODEL M_PN NUMD LEVEL=1
+ ***************************************
+ *** ONE-DIMENSIONAL NUMERICAL DIODE ***
+ ***************************************
+ OPTIONS DEFA=1P
+ X.MESH LOC=0.0 N=1
+ X.MESH LOC=30.0 N=201
+ DOMAIN NUM=1 MATERIAL=1
+ MATERIAL NUM=1 SILICON
+ MOBILITY MAT=1 CONCMOD=CT FIELDMOD=CT
+ DOPING GAUSS P.TYPE CONC=1E20 X.L=0.0 X.H=0.0 CHAR.L=1.0
+ DOPING UNIF N.TYPE CONC=1E14 X.L=0.0 X.H=30.0
+ DOPING GAUSS N.TYPE CONC=5E19 X.L=30.0 X.H=30.0 CHAR.L=2.0
+ MODELS BGN ^AVAL SRH AUGER CONCTAU CONCMOB FIELDMOB
+ METHOD AC=DIRECT
.OPTION ACCT BYPASS=1 METHOD=GEAR
.TRAN 0.5MS 50MS
.PRINT I(VLINE)
.END

34
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4 STAGE RTL INVERTER CHAIN
VIN 1 0 DC 0V PWL 0NS 0V 1NS 5V
VCC 12 0 DC 5.0V
RC1 12 3 2.5K
RB1 1 2 8K
Q1 3 2 0 QMOD AREA = 100P
RB2 3 4 8K
RC2 12 5 2.5K
Q2 5 4 0 QMOD AREA = 100P
RB3 5 6 8K
RC3 12 7 2.5K
Q3 7 6 0 QMOD AREA = 100P
RB4 7 8 8K
RC4 12 9 2.5K
Q4 9 8 0 QMOD AREA = 100P
.PRINT TRAN V(3) V(5) V(9)
.TRAN 1E-9 10E-9
.MODEL QMOD NBJT LEVEL=1
+ X.MESH NODE=1 LOC=0.0
+ X.MESH NODE=61 LOC=3.0
+ REGION NUM=1 MATERIAL=1
+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
.OPTION ACCT BYPASS=1
.END

70
tests/cider/serial/meclgate.cir Normal file
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MOTOROLA MECL III ECL GATE
*.DC VIN -2.0 0 0.02
.TRAN 0.2NS 20NS
VEE 22 0 -6.0
VIN 1 0 PULSE -0.8 -1.8 0.2NS 0.2NS 0.2NS 10NS 20NS
RS 1 2 50
Q1 4 2 6 QMOD AREA = 100P
Q2 4 3 6 QMOD AREA = 100P
Q3 5 7 6 QMOD AREA = 100P
Q4 0 8 7 QMOD AREA = 100P
D1 8 9 DMOD
D2 9 10 DMOD
RP1 3 22 50K
RC1 0 4 100
RC2 0 5 112
RE 6 22 380
R1 7 22 2K
R2 0 8 350
R3 10 22 1958
Q5 0 5 11 QMOD AREA = 100P
Q6 0 4 12 QMOD AREA = 100P
RP2 11 22 560
RP3 12 22 560
Q7 13 12 15 QMOD AREA = 100P
Q8 14 16 15 QMOD AREA = 100P
RE2 15 22 380
RC3 0 13 100
RC4 0 14 112
Q9 0 17 16 QMOD AREA = 100P
R4 16 22 2K
R5 0 17 350
D3 17 18 DMOD
D4 18 19 DMOD
R6 19 22 1958
Q10 0 14 20 QMOD AREA = 100P
Q11 0 13 21 QMOD AREA = 100P
RP4 20 22 560
RP5 21 22 560
.MODEL DMOD D RS=40 TT=0.1NS CJO=0.9PF N=1 IS=1E-14 EG=1.11 VJ=0.8 M=0.5
.MODEL QMOD NBJT LEVEL=1
+ X.MESH NODE=1 LOC=0.0
+ X.MESH NODE=10 LOC=0.9
+ X.MESH NODE=20 LOC=1.1
+ X.MESH NODE=30 LOC=1.4
+ X.MESH NODE=40 LOC=1.6
+ X.MESH NODE=61 LOC=3.0
+ REGION NUM=1 MATERIAL=1
+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
.OPTIONS ACCT BYPASS=1
.PRINT TRAN V(12) V(21)
.END

51
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RESISTIVE LOAD NMOS INVERTER
VIN 1 0 PWL 0 0.0 2NS 5
VDD 3 0 DC 5.0
RD 3 2 2.5K
M1 2 1 4 5 MMOD W=10UM
CL 2 0 2PF
VB 5 0 0
VS 4 0 0
.MODEL MMOD NUMOS
+ X.MESH L=0.0 N=1
+ X.MESH L=0.6 N=4
+ X.MESH L=0.7 N=5
+ X.MESH L=1.0 N=7
+ X.MESH L=1.2 N=11
+ X.MESH L=3.2 N=21
+ X.MESH L=3.4 N=25
+ X.MESH L=3.7 N=27
+ X.MESH L=3.8 N=28
+ X.MESH L=4.4 N=31
+
+ Y.MESH L=-.05 N=1
+ Y.MESH L=0.0 N=5
+ Y.MESH L=.05 N=9
+ Y.MESH L=0.3 N=14
+ Y.MESH L=2.0 N=19
+
+ REGION NUM=1 MATERIAL=1 Y.L=0.0
+ MATERIAL NUM=1 SILICON
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+
+ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
+ MATERIAL NUM=2 OXIDE
+
+ ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0
+ ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1
+ ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0
+ ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0
+
+ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0
+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05
+ DOPING UNIF N.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2
+ DOPING UNIF N.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2
+
+ MODELS CONCMOB FIELDMOB
+ METHOD AC=DIRECT ONEC
.TRAN 0.2NS 30NS
.OPTIONS ACCT BYPASS=1
.PRINT TRAN V(1) V(2)
.END

55
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TURNOFF TRANSIENT OF PASS TRANSISTOR
M1 11 2 3 4 MMOD W=20UM
CS 1 0 6.0PF
CL 3 0 6.0PF
R1 3 6 200K
VIN 6 0 DC 0
VDRN 1 11 DC 0
VG 2 0 DC 5 PWL 0 5 0.1N 0 1 0
VB 4 0 DC 0.0
.TRAN 0.05NS 0.2NS 0.0NS 0.05NS
.PRINT TRAN V(1) I(VDRN)
.IC V(1)=0 V(3)=0
.OPTION ACCT BYPASS=1
.MODEL MMOD NUMOS
+ X.MESH L=0.0 N=1
+ X.MESH L=0.6 N=4
+ X.MESH L=0.7 N=5
+ X.MESH L=1.0 N=7
+ X.MESH L=1.2 N=11
+ X.MESH L=3.2 N=21
+ X.MESH L=3.4 N=25
+ X.MESH L=3.7 N=27
+ X.MESH L=3.8 N=28
+ X.MESH L=4.4 N=31
+
+ Y.MESH L=-.05 N=1
+ Y.MESH L=0.0 N=5
+ Y.MESH L=.05 N=9
+ Y.MESH L=0.3 N=14
+ Y.MESH L=2.0 N=19
+
+ REGION NUM=1 MATERIAL=1 Y.L=0.0
+ MATERIAL NUM=1 SILICON
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+
+ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
+ MATERIAL NUM=2 OXIDE
+
+ ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0
+ ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1
+ ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0
+ ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0
+
+ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0
+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05
+ DOPING UNIF N.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2
+ DOPING UNIF N.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2
+
+ MODELS CONCMOB FIELDMOB
+ METHOD AC=DIRECT ONEC
.END

67
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BICMOS INVERTER PULLUP CIRCUIT
VDD 1 0 5.0V
VSS 2 0 0.0V
VIN 3 0 0.75V
VC 1 11 0.0V
VB 5 15 0.0V
Q1 11 15 4 M_NPN AREA=4
M1 5 3 1 1 M_PMOS W=20U L=2U AD=30P AS=30P PD=21U PS=21U
CL 4 0 5.0PF
.IC V(4)=0.75V V(5)=0.0V
.MODEL M_PMOS PMOS VTO=-0.8 UO=250 TOX=25N NSUB=5E16
+ UCRIT=10K UEXP=.15 VMAX=50K NEFF=2 XJ=.02U
+ LD=.15U CGSO=.1N CGDO=.1N CJ=.12M MJ=0.5
+ CJSW=0.3N MJSW=0.5 LEVEL=2
.MODEL M_NPN NBJT LEVEL=2
+ TITLE TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
+ $ SINCE ONLY HALF THE DEVICE IS SIMULATED, DOUBLE THE UNIT WIDTH TO GET
+ $ 1.0 UM EMITTER.
+ OPTIONS DEFW=2.0U
+ OUTPUT STATISTICS
+
+ X.MESH W=2.0 H.E=0.02 H.M=0.5 R=2.0
+ X.MESH W=0.5 H.S=0.02 H.M=0.2 R=2.0
+
+ Y.MESH L=-0.2 N=1
+ Y.MESH L= 0.0 N=5
+ Y.MESH W=0.10 H.E=0.004 H.M=0.05 R=2.5
+ Y.MESH W=0.15 H.S=0.004 H.M=0.02 R=2.5
+ Y.MESH W=1.05 H.S=0.02 H.M=0.1 R=2.5
+
+ DOMAIN NUM=1 MATERIAL=1 X.L=2.0 Y.H=0.0
+ DOMAIN NUM=2 MATERIAL=2 X.H=2.0 Y.H=0.0
+ DOMAIN NUM=3 MATERIAL=3 Y.L=0.0
+ MATERIAL NUM=1 POLYSILICON
+ MATERIAL NUM=2 OXIDE
+ MATERIAL NUM=3 SILICON
+
+ ELEC NUM=1 X.L=0.0 X.H=0.0 Y.L=1.1 Y.H=1.3
+ ELEC NUM=2 X.L=0.0 X.H=0.5 Y.L=0.0 Y.H=0.0
+ ELEC NUM=3 X.L=2.0 X.H=3.0 Y.L=-0.2 Y.H=-0.2
+
+ DOPING GAUSS N.TYPE CONC=3E20 X.L=2.0 X.H=3.0 Y.L=-0.2 Y.H=0.0
+ + CHAR.L=0.047 LAT.ROTATE
+ DOPING GAUSS P.TYPE CONC=5E18 X.L=0.0 X.H=5.0 Y.L=-0.2 Y.H=0.0
+ + CHAR.L=0.100 LAT.ROTATE
+ DOPING GAUSS P.TYPE CONC=1E20 X.L=0.0 X.H=0.5 Y.L=-0.2 Y.H=0.0
+ + CHAR.L=0.100 LAT.ROTATE RATIO=0.7
+ DOPING UNIF N.TYPE CONC=1E16 X.L=0.0 X.H=5.0 Y.L=0.0 Y.H=1.3
+ DOPING GAUSS N.TYPE CONC=5E19 X.L=0.0 X.H=5.0 Y.L=1.3 Y.H=1.3
+ + CHAR.L=0.100 LAT.ROTATE
+
+ METHOD AC=DIRECT ITLIM=10
+ MODELS BGN SRH AUGER CONCTAU CONCMOB FIELDMOB
.TRAN 0.5NS 4.0NS
.PRINT TRAN V(3) V(4)
.OPTION ACCT BYPASS=1
.END

3
tests/cider/serial/readme Normal file
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This directory contains the CIDER serial-version benchmarks used in the
thesis "Design-Oriented Mixed-Level Circuit and Device Simulation" by
David A. Gates.

40
tests/cider/serial/recovery.cir Normal file
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DIODE REVERSE RECOVERY
VPP 1 0 0.0V (PULSE 1.0V -1.0V 1NS 1PS 1PS 20NS 40NS)
VNN 2 0 0.0V
RS 1 3 1.0
LS 3 4 0.5UH
DT 4 2 M_PIN AREA=1
.MODEL M_PIN NUMD LEVEL=2
+ OPTIONS DEFW=100U
+ X.MESH N=1 L=0.0
+ X.MESH N=2 L=0.2
+ X.MESH N=4 L=0.4
+ X.MESH N=8 L=0.6
+ X.MESH N=13 L=1.0
+
+ Y.MESH N=1 L=0.0
+ Y.MESH N=9 L=4.0
+ Y.MESH N=24 L=10.0
+ Y.MESH N=29 L=15.0
+ Y.MESH N=34 L=20.0
+
+ DOMAIN NUM=1 MATERIAL=1
+ MATERIAL NUM=1 SILICON TN=20NS TP=20NS
+
+ ELECTRODE NUM=1 X.L=0.6 X.H=1.0 Y.L=0.0 Y.H=0.0
+ ELECTRODE NUM=2 X.L=-0.1 X.H=1.0 Y.L=20.0 Y.H=20.0
+
+ DOPING GAUSS P.TYPE CONC=1.0E19 CHAR.LEN=1.076 X.L=0.75 X.H=1.1 Y.H=0.0
+ + LAT.ROTATE RATIO=0.1
+ DOPING UNIF N.TYPE CONC=1.0E14
+ DOPING GAUSS N.TYPE CONC=1.0E19 CHAR.LEN=1.614 X.L=-0.1 X.H=1.1 Y.L=20.0
+
+ MODELS BGN SRH AUGER CONCTAU CONCMOB FIELDMOB
.OPTION ACCT BYPASS=1
.TRAN 0.1NS 10NS
.PRINT TRAN V(3) I(VIN)
.END

25
tests/cider/serial/rtlinv.cir Normal file
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@ -0,0 +1,25 @@
RTL INVERTER
VIN 1 0 DC 1 PWL 0 4 1NS 0
VCC 12 0 DC 5.0
RC1 12 3 2.5K
RB1 1 2 8K
Q1 3 2 0 QMOD AREA = 100P
.OPTION ACCT BYPASS=1
.TRAN 0.5N 5N
.PRINT TRAN V(2) V(3)
.MODEL QMOD NBJT LEVEL=1
+ X.MESH NODE=1 LOC=0.0
+ X.MESH NODE=61 LOC=3.0
+ REGION NUM=1 MATERIAL=1
+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
.END

41
tests/cider/serial/vco.cir Normal file
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VOLTAGE CONTROLLED OSCILLATOR
RC1 7 5 1K
RC2 7 6 1K
Q5 7 7 5 QMOD AREA = 100P
Q6 7 7 6 QMOD AREA = 100P
Q3 7 5 2 QMOD AREA = 100P
Q4 7 6 1 QMOD AREA = 100P
IB1 2 0 .5MA
IB2 1 0 .5MA
CB1 2 0 1PF
CB2 1 0 1PF
Q1 5 1 3 QMOD AREA = 100P
Q2 6 2 4 QMOD AREA = 100P
C1 3 4 .1UF
IS1 3 0 DC 2.5MA PULSE 2.5MA 0.5MA 0 1US 1US 50MS
IS2 4 0 1MA
VCC 7 0 10
.MODEL QMOD NBJT LEVEL=1
+ X.MESH NODE=1 LOC=0.0
+ X.MESH NODE=61 LOC=3.0
+ REGION NUM=1 MATERIAL=1
+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
.OPTION ACCT BYPASS=1
.TRAN 3US 600US 0 3US
.PRINT TRAN V(4)
.END