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include power dissipation of drain resistance

This commit is contained in:
dwarning 2020-06-19 17:48:27 +02:00 committed by Holger Vogt
parent 04a1a74c2e
commit 797042e7e7
1 changed files with 36 additions and 10 deletions
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46
src/spicelib/devices/vdmos/vdmosload.c
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@ -58,6 +58,9 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
register int selfheat;
double rd0T, rd1T, dBeta_dT, dIds_dT;
double Vrd=0.0, dIth_dVrd=0.0, dIrd_dT=0.0;
double drd0T_dT, drd1T_dT, drd_dT, dgdrain_dT=0.0;
double dIrd_dVrd, dIrd_dgdrain;
double deldelTemp=0.0, delTemp, delTemp1, Temp, Vds, Vgs;
double ceqqth=0.0;
double GmT, gTtg, gTtdp, gTtt, gTtsp, gcTt=0.0;
@ -269,7 +272,7 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
}
if (selfheat)
delTemp = DEVlimitlog(delTemp,
*(ckt->CKTstate0 + here->VDMOSdelTemp),20,&Check_th);
*(ckt->CKTstate0 + here->VDMOSdelTemp),30,&Check_th);
else
delTemp = 0.0;
#endif /*NODELIMITING*/
@ -285,17 +288,23 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
Beta = here->VDMOStTransconductance * pow(TempRatio,model->VDMOSmu);
dBeta_dT = Beta * model->VDMOSmu / Temp;
rd0T = here->VDMOSdrainResistance * pow(TempRatio, model->VDMOStexp0);
drd0T_dT = rd0T * model->VDMOStexp0 / Temp;
rd1T = 0.0;
drd1T_dT = 0.0;
if (model->VDMOSqsGiven) {
rd1T = here->VDMOSqsResistance * pow(TempRatio, model->VDMOStexp1);
drd1T_dT = rd1T * model->VDMOStexp1 / Temp;
}
} else {
Beta = here->VDMOStTransconductance;
dBeta_dT = 0.0;
rd0T = here->VDMOSdrainResistance;
drd0T_dT = 0.0;
rd1T = 0.0;
drd1T_dT = 0.0;
if (model->VDMOSqsGiven)
rd1T = here->VDMOSqsResistance;
drd1T_dT = 0.0;
}
/*
@ -398,13 +407,19 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
*(ckt->CKTrhsOld + here->VDMOSdNode) -
*(ckt->CKTrhsOld + here->VDMOSsNode));
double rd = rd0T + rd1T * (vdsn / (vdsn + fabs(model->VDMOSqsVoltage)));
if (rd > 0)
drd_dT = drd0T_dT + drd1T_dT * (vdsn / (vdsn + fabs(model->VDMOSqsVoltage)));
if (rd > 0) {
here->VDMOSdrainConductance = 1 / rd + ckt->CKTgmin;
else
dgdrain_dT = -drd_dT / (rd*rd);
} else {
here->VDMOSdrainConductance = 1 / rd0T;
dgdrain_dT = -drd0T_dT / (rd0T*rd0T);
}
} else {
if (rd0T > 0)
if (rd0T > 0) {
here->VDMOSdrainConductance = 1 / rd0T;
dgdrain_dT = -drd0T_dT / (rd0T*rd0T);
}
}
if (selfheat) {
@ -423,6 +438,13 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
here->VDMOScth = cdrain * Vds
- model->VDMOStype * (here->VDMOSgtempg * Vgs + here->VDMOSgtempd * Vds)
- here->VDMOSgtempT * delTemp;
Vrd = *(ckt->CKTrhsOld + here->VDMOSdNode) - *(ckt->CKTrhsOld + here->VDMOSdNodePrime);
dIth_dVrd = here->VDMOSdrainConductance * Vrd;
dIrd_dVrd = here->VDMOSdrainConductance;
dIrd_dgdrain = Vrd;
dIrd_dT = dIrd_dgdrain * dgdrain_dT;
here->VDMOScth += here->VDMOSdrainConductance * Vrd*Vrd - dIth_dVrd*Vrd - dIrd_dT*Vrd*delTemp;
}
/*
@ -573,9 +595,10 @@ bypass:
*(ckt->CKTrhs + here->VDMOSdNodePrime) += (-cdreq + model->VDMOStype * ceqgd);
*(ckt->CKTrhs + here->VDMOSsNodePrime) += cdreq + model->VDMOStype * ceqgs;
if (selfheat) {
*(ckt->CKTrhs + here->VDMOSdNodePrime) += GmT * delTemp;
*(ckt->CKTrhs + here->VDMOSdNode) += dIrd_dT * delTemp;
*(ckt->CKTrhs + here->VDMOSdNodePrime) += GmT * delTemp - dIrd_dT * delTemp;
*(ckt->CKTrhs + here->VDMOSsNodePrime) += -GmT * delTemp;
*(ckt->CKTrhs + here->VDMOStempNode) += here->VDMOScth - ceqqth; /* MOS dissipated power + Cthj current */
*(ckt->CKTrhs + here->VDMOStempNode) += here->VDMOScth - ceqqth;
double vCktTemp = (ckt->CKTtemp-CONSTCtoK); /* ckt temperature */
if (ckt->CKTmode & MODETRANOP)
vCktTemp *= ckt->CKTsrcFact;
@ -616,12 +639,15 @@ bypass:
if (selfheat)
{
(*(here->VDMOSDPtempPtr) += GmT);
(*(here->VDMOSDtempPtr) += dIrd_dT);
(*(here->VDMOSDPtempPtr) += GmT - dIrd_dT);
(*(here->VDMOSSPtempPtr) += -GmT);
(*(here->VDMOSGPtempPtr) += 0.0);
(*(here->VDMOSTemptempPtr) += -gTtt + 1/model->VDMOSrthjc + gcTt);
(*(here->VDMOSTemptempPtr) += -gTtt - dIrd_dT*Vrd + 1/model->VDMOSrthjc + gcTt);
(*(here->VDMOSTempgpPtr) += -gTtg);
(*(here->VDMOSTempdpPtr) += -gTtdp);
(*(here->VDMOSTempdPtr) += -dIth_dVrd);
(*(here->VDMOSTempdpPtr) += -gTtdp + dIth_dVrd);
(*(here->VDMOSTempspPtr) += -gTtsp);
(*(here->VDMOSTemptcasePtr) += -1/model->VDMOSrthjc);
(*(here->VDMOSTcasetempPtr) += -1/model->VDMOSrthjc);
@ -879,7 +905,7 @@ load:
if (selfheat) {
*(ckt->CKTrhs + here->VDIOposPrimeNode) += dIdio_dT*delTemp;
*(ckt->CKTrhs + here->VDMOSdNode) += -dIdio_dT*delTemp;
*(ckt->CKTrhs + here->VDMOStempNode) += Ith - model->VDMOStype*dIth_dVdio*vd - dIth_dT*delTemp; /* Diode dissipated power */
*(ckt->CKTrhs + here->VDMOStempNode) += Ith - model->VDMOStype*dIth_dVdio*vd - dIth_dT*delTemp;
}
/*
* load matrix