Fix NAN error in numd2 area report and crashes when a doping file is missing. Update examples/cider so that the test circuits all run; add case sensitivity tests for rootfile and ic.file parameter strings enclosed in a single pair of double quotes.

2026-08-22 13:57:32 +02:00 · 2021-09-29 20:22:56 +02:00
parent 68c5eb2d6b
commit 663a79dea8
23 changed files with 296 additions and 24 deletions
@@ -0,0 +1,11 @@
+
+Run:
+
+    ngspice -b pz1.cir 
+
+and the operating point file 'PEBJT1--OP.0.q1' is generated.
+
+The .model in the included library 'pebjt1.lib' has an output rootfile
+parameter which determines the PEBJT1-- prefix.  The mixed case in the name
+of the generated OP file is retained. Without any rootfile or output statement
+in the .model, the file created will be named 'OP.0.q1'.
@@ -10,8 +10,6 @@ IEE	13 2  0.1mA
 Q1	11 12 13 M_NPN AREA=8
 Q2	21 22 13 M_NPN AREA=8

-.DC VBBP 2.75v 3.25001v 10mv
-.PRINT V(21) V(11)

 .MODEL M_NPN nbjt level=2
 + title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
@@ -54,4 +52,6 @@ Q2	21 22 13 M_NPN AREA=8
 + models bgn srh auger conctau concmob fieldmob

 .OPTIONS ACCT BYPASS=1
+.DC VBBP 2.75v 3.25001v 10mv
+.PRINT DC V(21) V(11)
 .END
@@ -0,0 +1,72 @@
+**
+* Numerical models for a
+* polysilicon emitter complementary bipolar process.
+* The default device size is 1um by 10um (LxW)
+**
+
+.model M_NPN nbjt level=1
+ title One-Dimensional Numerical Bipolar
+ options base.depth=0.15 base.area=0.1 base.length=1.0 defa=10p
+ x.mesh loc=-0.2 n=1
+ x.mesh loc=0.0  n=51
+ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2
+ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2
+ domain   num=1 material=1 x.l=0.0
+ domain   num=2 material=2 x.h=0.0
+ material num=1 silicon
+ mobility mat=1 concmod=ct fieldmod=ct
+ material num=2 polysilicon
+ mobility mat=2 concmod=ct fieldmod=ct
+ doping gauss n.type conc=3e20  x.l=-0.2 x.h=0.0 char.len=0.047
+ doping gauss p.type conc=5e18  x.l=-0.2 x.h=0.0 char.len=0.100
+ doping unif  n.type conc=1e16  x.l=0.0 x.h=1.3
+ doping gauss n.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
+ models bgn srh auger conctau concmob fieldmob ^aval
+ method devtol=1e-12 ac=direct itlim=15
+ output rootfile="PEBJT1--" Psi N.CONC P.conc
+
+.model M_NPSUB numd level=1
+ title One-Dimensional Numerical Collector-Substrate Diode
+ options defa=10p
+ x.mesh loc=1.3  n=1
+ x.mesh loc=2.0  n=101
+ domain   num=1 material=1
+ material num=1 silicon
+ mobility mat=1 concmod=ct fieldmod=ct
+ doping gauss n.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
+ doping unif  p.type conc=1e15  x.l=0.0 x.h=2.0
+ models bgn srh auger conctau concmob fieldmob ^aval
+ method devtol=1e-12 itlim=10
+
+.model M_PNP nbjt level=1
+ title One-Dimensional Numerical Bipolar
+ options base.depth=0.2 base.area=0.1 base.length=1.0 defa=10p
+ x.mesh loc=-0.2 n=1
+ x.mesh loc=0.0  n=51
+ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2
+ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2
+ domain   num=1 material=1 x.l=0.0
+ domain   num=2 material=2 x.h=0.0
+ material num=1 silicon
+ mobility mat=1 concmod=ct fieldmod=ct
+ material num=2 polysilicon
+ mobility mat=2 concmod=ct fieldmod=ct
+ doping gauss p.type conc=3e20  x.l=-0.2 x.h=0.0 char.len=0.047
+ doping gauss n.type conc=5e17  x.l=-0.2 x.h=0.0 char.len=0.200
+ doping unif  p.type conc=1e16  x.l=0.0 x.h=1.3
+ doping gauss p.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
+ models bgn srh auger conctau concmob fieldmob ^aval
+ method devtol=1e-12 ac=direct itlim=15
+
+.model M_PNSUB numd level=1
+ title One-Dimensional Numerical Collector-Substrate Diode
+ options defa=10p
+ x.mesh loc=1.3  n=1
+ x.mesh loc=2.0  n=101
+ domain   num=1 material=1
+ material num=1 silicon
+ mobility mat=1 concmod=ct fieldmod=ct
+ doping gauss p.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
+ doping unif  n.type conc=1e15  x.l=0.0 x.h=2.0
+ models bgn srh auger conctau concmob fieldmob ^aval
+ method devtol=1e-12 itlim=10
@@ -13,4 +13,5 @@ CL  5 0 0.1pF

 .PZ 3 0 5 0 vol pz

+.PRINT PZ ALL
 .END
@@ -0,0 +1,18 @@
+PZ Analysis of a Common Emitter Amplifier
+
+Vcc 1 0 5v
+Vee 2 0 0v
+
+Vin 3 0 0.7838 AC 1
+RS  3 4 1K
+Q1  5 4 2 M_NPN AREA=4 SAVE
+RL  1 5 2.5k
+CL  5 0 0.1pF
+
+.INCLUDE pebjt1.lib
+
+.PZ 3 0 5 0 vol pz
+
+.PRINT PZ ALL
+.OP
+.END
@@ -0,0 +1,18 @@
+
+Run:
+
+    ngspice -b pd1.cir
+
+This will generate the operating point file 'Pre-Pin-Diode-OP.0.d1', which
+is read as the ic.file (initial condition file) for 'pindiode.cir'.
+Note that if there is no output line in the .model section of 'pd1.cir',
+the generated file will be named 'OP.0.d1'. In this case the ic.file value
+in 'pindiode.cir' would need to be chenged to match it.
+
+Then:
+
+    ngspice -b pindiode.cir
+
+can be run which will input 'Pre-Pin-Diode-OP.0.d1'. If you do not run
+'pd1.cir' first, the 'pindiode.cir' simulation will run OK but tell you it
+cannot find the iinitial condition file.
@@ -29,7 +29,8 @@ D1  1 2 M_PN AREA=100
 .option acct bypass=0 abstol=1e-18 itl2=100
 .op
 .ac dec 10 100kHz 10gHz
+.print ac i(Vpp)
 .dc Vpp -3.0v 2.0001v 50mv
-.print i(Vpp)
+.print dc i(Vpp)

 .END
@@ -26,6 +26,6 @@ D1  3 2 M_PN area=100

 .option acct bypass=1 abstol=1e-15 itl2=100
 .tran 0.001ns 1.0ns
-.print i(Vpp)
+.print tran i(Vpp)

 .END
@@ -0,0 +1,44 @@
+PRE-PIN-DIODE TWO-DIMENSIONAL PIN-DIODE CIRCUIT
+
+VIN 1 0 0.0v (PWL 0ns 0.8v 1ns -50.0v)
+L1  1 2 0.5uH
+VD  2 3 0.0v
+D1  3 0 M_PIN AREA=200 save
+VRC 2 4 0.0v
+R1  4 5 100
+C1  5 0 1.0nF
+
+.MODEL M_PIN NUMD LEVEL=2
+ options defw=1000u
+ x.mesh n=1 l=0.0
+ x.mesh n=2 l=0.2
+ x.mesh n=4 l=0.4
+ x.mesh n=8 l=0.6
+ x.mesh n=13 l=1.0
+
+ y.mesh n=1 l=0.0
+ y.mesh n=9 l=4.0
+ y.mesh n=24 l=10.0
+ y.mesh n=29 l=15.0
+ y.mesh n=34 l=20.0
+
+ domain num=1 material=1
+ material num=1 silicon tn=20ns tp=20ns
+
+ electrode num=1 x.l=0.6 x.h=1.0 y.h=0.0
+ electrode num=2 y.l=20.0
+
+ doping gauss p.type conc=1.0e20 char.len=1.076 x.l=0.75 x.h=1.1 y.h=0.0
+ + lat.rotate ratio=0.1
+ doping unif  n.type conc=1.0e14
+ doping gauss n.type conc=1.0e20 char.len=1.614 x.l=-0.1 x.h=1.1 y.l=20.0
+
+ models bgn srh auger conctau concmob fieldmob
+ output rootfile="Pre-Pin-Diode-"
+
+.OPTION ACCT BYPASS=1
+* .TRAN 1NS 100NS
+* .PRINT TRAN v(3) I(VIN)
+.op
+
+.END
@@ -3,7 +3,7 @@ TWO-DIMENSIONAL PIN-DIODE CIRCUIT
 VIN 1 0 0.0v (PWL 0ns 0.8v 1ns -50.0v)
 L1  1 2 0.5uH
 VD  2 3 0.0v
-D1  3 0 M_PIN AREA=200 IC.FILE="OP.0.d1"
+D1  3 0 M_PIN AREA=200 IC.FILE="Pre-Pin-Diode-OP.0.d1"
 VRC 2 4 0.0v
 R1  4 5 100
 C1  5 0 1.0nF
@@ -38,5 +38,6 @@ C1  5 0 1.0nF
 .OPTION ACCT BYPASS=1
 .TRAN 1NS 100NS
 .PRINT TRAN v(3) I(VIN)
+.PLOT TRAN v(3) I(VIN)

 .END
@@ -54,6 +54,6 @@ CB  3 4 0.1pf
 + method ac=direct onec

 .tran 0.2ns 40ns
-.print v(4)
+.print tran v(4)
 .options acct bypass=1 method=gear
 .end
@@ -31,4 +31,5 @@ IREF 7 0 50UA
 .TRAN 0.1NS 50NS

 .OPTIONS ACCT BYPASS=1 METHOD=GEAR
+.PRINT TRAN I(VB)
 .END
@@ -26,4 +26,5 @@ M8  8 9 1 1 M_PMOS_1 W=15U  L=1U
 .DC VPL -5MV 5MV 0.1MV

 .OPTIONS ACCT BYPASS=1 METHOD=GEAR
+.print DC V(3) V(4) V(8)
 .END
@@ -109,6 +109,6 @@ VBN 2 26 0.0V
 + OUTPUT ^ALL.DEBUG

 .TRAN 0.1NS 5.0NS
-.PRINT V(4)
+.PRINT TRAN V(4)
 .OPTIONS ACCT BYPASS=1 METHOD=GEAR
 .END
@@ -24,7 +24,7 @@ D1 1 2 M_RES AREA=1
 *.OP
 *.DC VPP 0.0v 10.01v 0.1v
 .TRAN 1s 10.001s 0s 0.1s
-.PRINT I(VPP)
+.PRINT TRAN I(VPP)

 .OPTION ACCT BYPASS=1
 .END
@@ -20,7 +20,7 @@ D1 1 2 M_RES AREA=1
 *.OP
 .DC VPP 0.0v 10.01v 0.1v
 *.TRAN 1s 100.001s 0s 0.2s
-.PRINT I(VPP)
+.PRINT DC I(VPP)

 .OPTION ACCT BYPASS=1 RELTOL=1e-12
 .END
@@ -26,5 +26,5 @@ RL 1 2 1.0K

 .OPTION ACCT BYPASS=1 METHOD=GEAR
 .TRAN 0.5MS 50MS
-.PRINT I(VLINE)
+.PRINT TRAN I(VLINE)
 .END
@@ -35,6 +35,6 @@ DT  4 2 M_PIN AREA=1

 .OPTION ACCT BYPASS=1
 .TRAN 0.1NS 10NS
-.PRINT TRAN V(3) I(VIN)
+.PRINT TRAN V(3) I(VNN)

 .END