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Fixed bug in gnu getopt handling 

Made doc more readable
This commit is contained in:
rouat 2001-12-04 19:37:56 +00:00
parent dee7afbfcc
commit 45e21263c1
11 changed files with 190 additions and 104 deletions
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4
ChangeLog
View File

@ -1,3 +1,7 @@
2001-12-04 Emmanuel Rouat <emmanuel.rouat@wanadoo.fr>
* configure.in, main.c: Forgot a bit to handle GNU getopt correctly
2001-11-25 Emmanuel Rouat <emmanuel.rouat@wanadoo.fr>
* configure.in: New way (cleaner) to handle GNU getopt.

6
acconfig.h
View File

@ -32,11 +32,11 @@
/* Undefine HAVE_EKV since it is not included in the standard distribution */
#undef HAVE_EKV
/* Undefine HAVE_GNUREADLINE */
/* Define if we have GNU readline */
#undef HAVE_GNUREADLINE
/* Define if we don't have GETOPT in the library */
#undef HAVE_GETOPT
/* Define if we have GNU long getopt */
#undef HAVE_GNUGETOPT
/* We do not want spurios debug info into non-developer code */
#undef FTEDEBUG

6
configure.in
View File

@ -179,9 +179,9 @@ AC_CHECK_LIB(gc,GC_malloc,AC_DEFINE(HAVE_LIBGC) LIBS="$LIBS -lgc")
dnl Check for the asprintf function:
AC_CHECK_FUNCS(asprintf)
AC_CHECK_FUNC(getopt_long, getopt_long=true)
AM_CONDITIONAL(HAVE_GETOPT_LONG, test "$getopt_long" = "true")
dnl Check for the GNU long getopt_long:
AC_CHECK_FUNC(getopt_long, AC_DEFINE(HAVE_GNUGETOPT) getopt_long=true)
AM_CONDITIONAL(HAVE_GNUGETOPT, test "$getopt_long" = "true")
# Expand the prefix variable (this is really annoying!)
if eval "test x$prefix = xNONE"; then

4
doc/ChangeLog
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@ -1,3 +1,7 @@
2001-12-04 Emmanuel Rouat <emmanuel.rouat@wanadoo.fr>
* ngspice.texi: corrected a few bugs, and made some chapters readable.
2000-05-22 Paolo Nenzi <p.nenzi@ieee.org>
* ngspice.texi: Added text for u2 function and for resistance ac
paramter.

248
doc/ngspice.texi
View File

@ -1870,8 +1870,9 @@ Note: "u2" function has been introduced in rework-11.
The following standard operators are defined:
@example
+ - * / @^{@ } unary -
+ - * / @{ @} unary -
@end example
@ -6529,6 +6530,7 @@ and model, but are provided as a quick reference guide.
@node Uniform RC line, Arbitrary Source, Model and Device Parameters, Model and Device Parameters
@section URC: Uniform R.C. line
@example
------------------------------------------------------------
| URC - instance parameters (input-output) |
@ -6564,10 +6566,12 @@ and model, but are provided as a quick reference guide.
| isperl Saturation current per length |
| rsperl Diode resistance per length |
------------------------------------------------------------
@end example
@node Arbitrary Source, Bipolar Junction Transistor, Uniform RC line, Model and Device Parameters
@section ASRC: Arbitrary Source
@example
------------------------------------------------------------
| ASRC - instance parameters (input-only) |
@ -6585,10 +6589,12 @@ and model, but are provided as a quick reference guide.
| pos_node Positive Node |
| neg_node Negative Node |
------------------------------------------------------------
@end example
@node Bipolar Junction Transistor, BSIM1 Berkeley Short Channel IGFET Model, Arbitrary Source, Model and Device Parameters
@section BJT: Bipolar Junction Transistor
@example
------------------------------------------------------------
| BJT - instance parameters (input-only) |
|-----------------------------------------------------------+
@ -6752,10 +6758,12 @@ and model, but are provided as a quick reference guide.
| transtimevbcfact Transit time VBC factor |
| excessphasefactor Excess phase fact. |
------------------------------------------------------------
@end example
@node BSIM1 Berkeley Short Channel IGFET Model, BSIM2 Berkeley Short Channel IGFET Model, Bipolar Junction Transistor, Model and Device Parameters
@section BSIM1: Berkeley Short Channel IGFET Model
@example
------------------------------------------------------------
| BSIM1 - instance parameters (input-only) |
@ -6796,7 +6804,7 @@ and model, but are provided as a quick reference guide.
| BSIM1 - model parameters (input-output) |
|-----------------------------------------------------------+
| vfb Flat band voltage |
lvfb Length dependence of vfb
|lvfb Length dependence of vfb |
| wvfb Width dependence of vfb |
| phi Strong inversion surface potential |
------------------------------------------------------------
@ -6820,7 +6828,7 @@ and model, but are provided as a quick reference guide.
---------------------------------------------------------------------
| BSIM1 - model input-output parameters - continued|
| BSIM1 - model input-output parameters - continued |
|--------------------------------------------------------------------+
|wx2e Width dependence of x2e |
|x3e VDS dependence of eta |
@ -6903,10 +6911,12 @@ and model, but are provided as a quick reference guide.
|wdf Default width of source drain diffusion in um |
|dell Length reduction of source drain diffusion |
---------------------------------------------------------------------------
@end example
@node BSIM2 Berkeley Short Channel IGFET Model, Fixed capacitor, BSIM1 Berkeley Short Channel IGFET Model, Model and Device Parameters
@section BSIM2: Berkeley Short Channel IGFET Model
@example
------------------------------------------------------------
| BSIM2 - instance parameters (input-only) |
@ -7052,90 +7062,101 @@ and model, but are provided as a quick reference guide.
| wu1d Width depence of u1d |
| n0 Subthreshold slope at VDS=0 VBS=0 |
| ln0 Length dependence of n0 |
| continued |
| continued |
------------------------------------------------------------
------------------------------------------------------------------------
--------------------------------------------------------------
| BSIM2 - model input-output parameters - continued |
|-----------------------------------------------------------------------+
|wn0 Width dependence of n0 |
|nb VBS dependence of n |
|lnb Length dependence of nb |
|wnb Width dependence of nb |
------------------------------------------------------------------------
|nd VDS dependence of n |
|lnd Length dependence of nd |
|wnd Width dependence of nd |
|vof0 Threshold voltage offset AT VDS=0 VBS=0 |
|-----------------------------------------------------------------------+
|lvof0 Length dependence of vof0 |
|wvof0 Width dependence of vof0 |
|vofb VBS dependence of vof |
|lvofb Length dependence of vofb |
------------------------------------------------------------------------
|wvofb Width dependence of vofb |
|vofd VDS dependence of vof |
|lvofd Length dependence of vofd |
|wvofd Width dependence of vofd |
|-----------------------------------------------------------------------+
|ai0 Pre-factor of hot-electron effect. |
|lai0 Length dependence of ai0 |
|wai0 Width dependence of ai0 |
|aib VBS dependence of ai |
------------------------------------------------------------------------
|laib Length dependence of aib |
|waib Width dependence of aib |
|bi0 Exponential factor of hot-electron effect. |
|lbi0 Length dependence of bi0 |
|-----------------------------------------------------------------------+
|wbi0 Width dependence of bi0 |
|bib VBS dependence of bi |
|lbib Length dependence of bib |
|wbib Width dependence of bib |
------------------------------------------------------------------------
|vghigh Upper bound of the cubic spline function. |
|lvghigh Length dependence of vghigh |
|wvghigh Width dependence of vghigh |
|vglow Lower bound of the cubic spline function. |
|-----------------------------------------------------------------------+
|lvglow Length dependence of vglow |
|wvglow Width dependence of vglow |
|tox Gate oxide thickness in um |
|temp Temperature in degree Celcius |
------------------------------------------------------------------------
|vdd Maximum Vds |
|vgg Maximum Vgs |
|vbb Maximum Vbs |
|cgso Gate source overlap capacitance per unit channel width(m)
|-----------------------------------------------------------------------+
|cgdo Gate drain overlap capacitance per unit channel width(m)|
|cgbo Gate bulk overlap capacitance per unit channel length(m)|
|xpart Flag for channel charge partitioning |
|--------------------------------------------------------------+
|wn0 Width dependence of n0 |
|nb VBS dependence of n |
|lnb Length dependence of nb |
|wnb Width dependence of nb |
--------------------------------------------------------------+
|nd VDS dependence of n |
|lnd Length dependence of nd |
|wnd Width dependence of nd |
|vof0 Threshold voltage offset AT VDS=0 VBS=0 |
|--------------------------------------------------------------+
|lvof0 Length dependence of vof0 |
|wvof0 Width dependence of vof0 |
|vofb VBS dependence of vof |
|lvofb Length dependence of vofb |
--------------------------------------------------------------+
|wvofb Width dependence of vofb |
|vofd VDS dependence of vof |
|lvofd Length dependence of vofd |
|wvofd Width dependence of vofd |
|--------------------------------------------------------------+
|ai0 Pre-factor of hot-electron effect. |
|lai0 Length dependence of ai0 |
|wai0 Width dependence of ai0 |
|aib VBS dependence of ai |
--------------------------------------------------------------+
|laib Length dependence of aib |
|waib Width dependence of aib |
|bi0 Exponential factor of hot-electron effect. |
|lbi0 Length dependence of bi0 |
|--------------------------------------------------------------+
|wbi0 Width dependence of bi0 |
|bib VBS dependence of bi |
|lbib Length dependence of bib |
|wbib Width dependence of bib |
--------------------------------------------------------------+
|vghigh Upper bound of the cubic spline function. |
|lvghigh Length dependence of vghigh |
|wvghigh Width dependence of vghigh |
|vglow Lower bound of the cubic spline function. |
|--------------------------------------------------------------+
|lvglow Length dependence of vglow |
|wvglow Width dependence of vglow |
|tox Gate oxide thickness in um |
|temp Temperature in degree Celcius |
--------------------------------------------------------------+
|vdd Maximum Vds |
|vgg Maximum Vgs |
|vbb Maximum Vbs |
|cgso Gate source overlap capacitance per unit |
| channel width(m) |
|--------------------------------------------------------------+
|cgdo Gate drain overlap capacitance |
| per unit channel width(m) |
|cgbo Gate bulk overlap capacitance |
| per unit channel length(m) |
|xpart Flag for channel charge partitioning |
| continued |
------------------------------------------------------------------------
---------------------------------------------------------------
---------------------------------------------------------------------------
| BSIM2 - model input-output parameters - continued |
|--------------------------------------------------------------------------+
|rsh Source drain diffusion sheet resistance in ohm per square |
|js Source drain junction saturation current per unit area |
|pb Source drain junction built in potential |
mj Source drain bottom junction capacitance grading coefficient
| |
---------------------------------------------------------------------------
|pbsw Source drain side junction capacitance built in potential |
|mjsw Source drain side junction capacitance grading coefficient |
|cj Source drain bottom junction capacitance per unit area |
|cjsw Source drain side junction capacitance per unit area |
|wdf Default width of source drain diffusion in um |
|dell Length reduction of source drain diffusion |
---------------------------------------------------------------------------
---------------------------------------------------------------
| BSIM2 - model input-output parameters |
|--------------------------------------------------------------+
|rsh Source drain diffusion sheet resistance |
| in ohm per square |
|js Source drain junction saturation current |
| per unit area |
|pb Source drain junction built in potential |
|mj Source drain bottom junction capacitance |
| grading coefficient |
--------------------------------------------------------------+
|pbsw Source drain side junction capacitance |
| built in potential |
|mjsw Source drain side junction capacitance |
| grading coefficient |
|cj Source drain bottom junction capacitance |
| per unit area |
|cjsw Source drain side junction capacitance |
| per unit area |
|wdf Default width of source drain diffusion in um |
|dell Length reduction of source drain diffusion |
---------------------------------------------------------------
@end example
@node Fixed capacitor, Current controlled current source, BSIM2 Berkeley Short Channel IGFET Model, Model and Device Parameters
@section Capacitor: Fixed capacitor
@example
------------------------------------------------------------
| Capacitor - instance parameters (input-output) |
@ -7170,10 +7191,12 @@ and model, but are provided as a quick reference guide.
| defw Default width |
| narrow width correction factor |
------------------------------------------------------------
@end example
@node Current controlled current source, Linear current controlled current source, Fixed capacitor, Model and Device Parameters
@section CCCS: Current controlled current source
@example
------------------------------------------------------------
| CCCS - instance parameters (input-output) |
@ -7192,10 +7215,12 @@ and model, but are provided as a quick reference guide.
| v CCCS voltage at output |
| p CCCS power |
------------------------------------------------------------
@end example
@node Linear current controlled current source, Current controlled ideal switch, Current controlled current source, Model and Device Parameters
@section CCVS: Linear current controlled current source
@example
------------------------------------------------------------
| CCVS - instance parameters (input-output) |
@ -7214,11 +7239,13 @@ and model, but are provided as a quick reference guide.
| v CCVS output voltage |
| p CCVS power |
------------------------------------------------------------
@end example
@node Current controlled ideal switch, Junction Diode model, Linear current controlled current source, Model and Device Parameters
@section CSwitch: Current controlled ideal switch
@example
------------------------------------------------------------
| CSwitch - instance parameters (input-only) |
@ -7262,10 +7289,12 @@ and model, but are provided as a quick reference guide.
| gon Closed conductance |
| goff Open conductance |
------------------------------------------------------------
@end example
@node Junction Diode model, Inductor, Current controlled ideal switch, Model and Device Parameters
@section Diode: Junction Diode model
@example
------------------------------------------------------------
| Diode - instance parameters (input-output) |
@ -7329,10 +7358,12 @@ and model, but are provided as a quick reference guide.
|-----------------------------------------------------------+
| cond Ohmic conductance |
------------------------------------------------------------
@end example
@node Inductor, Mutual inductors, Junction Diode model, Model and Device Parameters
@section Inductor: Inductors
@example
------------------------------------------------------------
| Inductor - instance parameters (input-output) |
@ -7353,10 +7384,12 @@ and model, but are provided as a quick reference guide.
p instantaneous power dissipated by the inductor
| |
-------------------------------------------------------------
@end example
@node Mutual inductors, Independent current source, Inductor, Model and Device Parameters
@section mutual: Mutual inductors
@example
------------------------------------------------------------
| mutual - instance parameters (input-output) |
@ -7366,10 +7399,12 @@ and model, but are provided as a quick reference guide.
| inductor1 First coupled inductor |
| inductor2 Second coupled inductor |
------------------------------------------------------------
@end example
@node Independent current source, Junction Field effect transistor, Mutual inductors, Model and Device Parameters
@section Isource: Independent current source
@example
------------------------------------------------------------
| Isource - instance parameters (input-only) |
@ -7411,10 +7446,12 @@ and model, but are provided as a quick reference guide.
| v Voltage across the supply |
| p Power supplied by the source |
------------------------------------------------------------
@end example
@node Junction Field effect transistor, Lossy transmission line, Independent current source, Model and Device Parameters
@section JFET: Junction Field effect transistor
@example
------------------------------------------------------------
| JFET - instance parameters (input-output) |
@ -7472,7 +7509,7 @@ and model, but are provided as a quick reference guide.
| rd Drain ohmic resistance |
| rs Source ohmic resistance |
| cgs G-S junction capactance |
| continued |
| continued |
------------------------------------------------------------
@ -7498,10 +7535,12 @@ and model, but are provided as a quick reference guide.
| gd Drain conductance |
| gs Source conductance |
------------------------------------------------------------
@end example
@node Lossy transmission line, GaAs MESFET model, Junction Field effect transistor, Model and Device Parameters
@section LTRA: Lossy transmission line
@example
------------------------------------------------------------
| LTRA - instance parameters (input-only) |
@ -7541,22 +7580,24 @@ and model, but are provided as a quick reference guide.
|len length of line |
|nocontrol No timestep control |
|steplimit always limit timestep to 0.8*(delay of line)
| continued |
| continued |
------------------------------------------------------------
-----------------------------------------------------------------------------------
| LTRA - model input-output parameters - continued |
|----------------------------------------------------------------------------------+
|nosteplimit don't always limit timestep to 0.8*(delay of line) |
|lininterp use linear interpolation |
|quadinterp use quadratic interpolation |
|mixedinterp use linear interpolation if quadratic results look unacceptable |
-----------------------------------------------------------------------------------
|truncnr use N-R iterations for step calculation in LTRAtrunc |
|truncdontcut don't limit timestep to keep impulse response calculation errors low
|compactrel special reltol for straight line checking |
|compactabs special abstol for straight line checking |
-----------------------------------------------------------------------------------
---------------------------------------------------------------------
| LTRA - model input-output parameters - continued |
|---------------------------------------------------------------------+
|nosteplimit don't always limit timestep to 0.8*(delay of line) |
|lininterp use linear interpolation |
|quadinterp use quadratic interpolation |
|mixedinterp use linear interpolation if quadratic results |
| look unacceptable |
---------------------------------------------------------------------
|truncnr use N-R iterations for step calculation in LTRAtrunc |
|truncdontcut don't limit timestep to keep impulse response |
| calculation errors low |
|compactrel special reltol for straight line checking |
|compactabs special abstol for straight line checking |
---------------------------------------------------------------------
------------------------------------------------------------
@ -7565,10 +7606,12 @@ and model, but are provided as a quick reference guide.
| rel Rel. rate of change of deriv. for bkpt |
| abs Abs. rate of change of deriv. for bkpt |
------------------------------------------------------------
@end example
@node GaAs MESFET model, Level 1 MOSfet model, Lossy transmission line, Model and Device Parameters
@section MES: GaAs MESFET model
@example
------------------------------------------------------------
| MES - instance parameters (input-output) |
@ -7656,10 +7699,12 @@ and model, but are provided as a quick reference guide.
| depl_cap Depletion capacitance |
| vcrit Critical voltage |
------------------------------------------------------------
@end example
@node Level 1 MOSfet model, Level 2 MOSfet model, GaAs MESFET model, Model and Device Parameters
@section Mos1: Level 1 MOSfet model with Meyer capacitance model
@example
------------------------------------------------------------
| Mos1 - instance parameters (input-only) |
@ -7826,10 +7871,12 @@ and model, but are provided as a quick reference guide.
|-----------------------------------------------------------+
| type N-channel or P-channel MOS |
------------------------------------------------------------
@end example
@node Level 2 MOSfet model, Level 3 MOSfet model, Level 1 MOSfet model, Model and Device Parameters
@section Mos2: Level 2 MOSfet model with Meyer capacitance model
@example
------------------------------------------------------------
| Mos2 - instance parameters (input-only) |
@ -8001,10 +8048,12 @@ and model, but are provided as a quick reference guide.
|-----------------------------------------------------------+
| type N-channel or P-channel MOS |
------------------------------------------------------------
@end example
@node Level 3 MOSfet model, Level 6 MOSfet model, Level 2 MOSfet model, Model and Device Parameters
@section Mos3: Level 3 MOSfet model with Meyer capacitance model
@example
------------------------------------------------------------
@ -8179,10 +8228,12 @@ and model, but are provided as a quick reference guide.
|-----------------------------------------------------------+
| type N-channel or P-channel MOS |
------------------------------------------------------------
@end example
@node Level 6 MOSfet model, Simple linear resistor, Level 3 MOSfet model, Model and Device Parameters
@section Mos6: Level 6 MOSfet model with Meyer capacitance model
@example
------------------------------------------------------------
@ -8353,10 +8404,12 @@ and model, but are provided as a quick reference guide.
|-----------------------------------------------------------+
| type N-channel or P-channel MOS |
------------------------------------------------------------
@end example
@node Simple linear resistor, Ideal voltage controlled switch, Level 6 MOSfet model, Model and Device Parameters
@section Resistor: Simple linear resistor
@example
------------------------------------------------------------
| Resistor - instance parameters (input-output) |
@ -8393,10 +8446,12 @@ and model, but are provided as a quick reference guide.
| defw Default device width |
| tnom Parameter measurement temperature |
------------------------------------------------------------
@end example
@node Ideal voltage controlled switch, Lossless transmission line, Simple linear resistor, Model and Device Parameters
@section Switch: Ideal voltage controlled switch
@example
------------------------------------------------------------
| Switch - instance parameters (input-only) |
@ -8441,10 +8496,12 @@ and model, but are provided as a quick reference guide.
| gon Conductance when closed |
| goff Conductance when open |
------------------------------------------------------------
@end example
@node Lossless transmission line, Voltage controlled current source, Ideal voltage controlled switch, Model and Device Parameters
@section Tranline: Lossless transmission line
@example
------------------------------------------------------------
| Tranline - instance parameters (input-only) |
@ -8481,10 +8538,12 @@ and model, but are provided as a quick reference guide.
| neg_node2 Negative node of end 2 of t. line |
| delays Delayed values of excitation |
------------------------------------------------------------
@end example
@node Voltage controlled current source, Voltage controlled voltage source, Lossless transmission line, Model and Device Parameters
@section VCCS: Voltage controlled current source
@example
------------------------------------------------------------
| VCCS - instance parameters (input-only) |
@ -8512,10 +8571,12 @@ and model, but are provided as a quick reference guide.
| v Voltage across output |
| p Power |
------------------------------------------------------------
@end example
@node Voltage controlled voltage source, Independent voltage source, Voltage controlled current source, Model and Device Parameters
@section VCVS: Voltage controlled voltage source
@example
------------------------------------------------------------
| VCVS - instance parameters (input-only) |
@ -8543,10 +8604,12 @@ and model, but are provided as a quick reference guide.
| v Output voltage |
| p Power |
------------------------------------------------------------
@end example
@node Independent voltage source, , Voltage controlled voltage source, Model and Device Parameters
@section Vsource: Independent voltage source
@example
------------------------------------------------------------
| Vsource - instance parameters (input-only) |
@ -8587,5 +8650,6 @@ and model, but are provided as a quick reference guide.
| i Voltage source current |
| p Instantaneous power |
------------------------------------------------------------
@end example
@bye

5
src/ChangeLog
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@ -1,3 +1,8 @@
2001-12-04 Emmanuel Rouat <emmanuel.rouat@wanadoo.fr>
* maths/cmaths/Makefile.am (noinst_PROGRAMS): test programs
shouldnt get installed
2000-10-13 Arno W. Peters <A.W.Peters@ieee.org>
* ngspice.txt: changes SPICE: to NGSPICE: to restore help

6
src/main.c
View File

@ -16,8 +16,12 @@
#include <sys/types.h>
#define _GNU_SOURCE
#ifdef HAVE_GNUGETOPT
#include <getopt.h>
#else
#include <misc/getopt.h>
#endif
#include <iferrmsg.h>
#include <ftedefs.h>

2
src/maths/cmaths/Makefile.am
View File

@ -13,7 +13,7 @@ libcmaths_a_SOURCES = \
cmath4.c \
cmath4.h
bin_PROGRAMS = test_cx_mag test_cx_j test_cx_ph
noinst_PROGRAMS = test_cx_mag test_cx_j test_cx_ph
test_cx_ph_SOURCES = \
test_cx_ph.c

2
src/misc/Makefile.am
View File

@ -28,7 +28,7 @@ EXTRA_libmisc_a_SOURCES = \
misc_time.h \
wlist.c
if HAVE_GETOPT_LONG
if HAVE_GNUGETOPT
libmisc_a_SOURCES = \
alloc.c \
alloc.h \

5
tests/ChangeLog
View File

@ -1,3 +1,8 @@
2001-12-04 Emmanuel Rouat <emmanuel.rouat@wanadoo.fr>
* check.sh (testdir): turned that script into 'real' sh script
(was bash, really)
2000-09-14 Arno W. Peters <A.W.Peters@ieee.org>
* diffpair.out, filters/lowpass.out, polezero/filt_bridge_t.out,

6
tests/check.sh
View File

@ -5,9 +5,9 @@ TEST=$2
DIFFPIPE="Analysis|CPU|memory|Date|Note|Sun|Mon|Tue|Wed|Thu|Fri|Sat|Jan|Feb|Mar|Apr|Jun|Jul|Aug|Sep|Oct|Nov|Dec"
testname=$(basename $TEST .cir)
testdir=$(dirname $TEST)
$NGSPICE < $testdir/$testname.cir 2>&1 | egrep -v $DIFFPIPE > $testname.test
testname=`basename $TEST .cir`
testdir=`dirname $TEST`
$NGSPICE --batch $testdir/$testname.cir 2>&1 | egrep -v $DIFFPIPE > $testname.test
if diff -u $testdir/$testname.out $testname.test; then
rm $testname.test
exit 0