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bsimcmg, adms workaround, remove L from default definition for LSP
L is an instance parameter, and 'here' is NULL when needed you will need to explicitely set LSP, instead of relying on the default
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@@ -381,7 +381,7 @@
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`MPRcc( CRATIO ,0.5 ,"" ,0.0 ,1.0 ,"Ratio of the corner area filled with silicon to the total corner area" )
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`MPRcc( CRATIO ,0.5 ,"" ,0.0 ,1.0 ,"Ratio of the corner area filled with silicon to the total corner area" )
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`MPRoo( DELTAPRSD ,0.0 ,"m" ,-FPITCH ,inf ,"Change in silicon/silicide interface length due to non-rectangular epi" )
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`MPRoo( DELTAPRSD ,0.0 ,"m" ,-FPITCH ,inf ,"Change in silicon/silicide interface length due to non-rectangular epi" )
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`MPIcc( SDTERM ,0 ,"" ,0 ,1 ,"Indicator of whether the source/drain are terminated with silicide" )
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`MPIcc( SDTERM ,0 ,"" ,0 ,1 ,"Indicator of whether the source/drain are terminated with silicide" )
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`MPRnb( LSP ,(0.2*(L + XL)) ,"m" ,"Thickness of the gate sidewall spacer" )
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`MPRnb( LSP ,(0.2*(3.0e-8 + XL)) ,"m" ,"Thickness of the gate sidewall spacer" )
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`MPRco( EPSRSP ,3.9 ,"" ,1.0 ,inf ,"Relative dielectric constant of the spacer" )
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`MPRco( EPSRSP ,3.9 ,"" ,1.0 ,inf ,"Relative dielectric constant of the spacer" )
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`MPRoz( TGATE ,3.0e-8 ,"m" ,"Gate height on top of the hard mask" )
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`MPRoz( TGATE ,3.0e-8 ,"m" ,"Gate height on top of the hard mask" )
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`MPRcz( TMASK ,3.0e-8 ,"m" ,"Height of hard mask on top of the fin" )
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`MPRcz( TMASK ,3.0e-8 ,"m" ,"Height of hard mask on top of the fin" )
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