bsimcmg, adms workaround, remove L from default definition for LSP

L is an instance parameter, and 'here' is NULL when needed
you will need to explicitely set LSP, instead of relying on the default
This commit is contained in:
rlar
2017-09-19 21:08:47 +02:00
parent d03d47b389
commit 438f017c3a
@@ -381,7 +381,7 @@
`MPRcc( CRATIO ,0.5 ,"" ,0.0 ,1.0 ,"Ratio of the corner area filled with silicon to the total corner area" ) `MPRcc( CRATIO ,0.5 ,"" ,0.0 ,1.0 ,"Ratio of the corner area filled with silicon to the total corner area" )
`MPRoo( DELTAPRSD ,0.0 ,"m" ,-FPITCH ,inf ,"Change in silicon/silicide interface length due to non-rectangular epi" ) `MPRoo( DELTAPRSD ,0.0 ,"m" ,-FPITCH ,inf ,"Change in silicon/silicide interface length due to non-rectangular epi" )
`MPIcc( SDTERM ,0 ,"" ,0 ,1 ,"Indicator of whether the source/drain are terminated with silicide" ) `MPIcc( SDTERM ,0 ,"" ,0 ,1 ,"Indicator of whether the source/drain are terminated with silicide" )
`MPRnb( LSP ,(0.2*(L + XL)) ,"m" ,"Thickness of the gate sidewall spacer" ) `MPRnb( LSP ,(0.2*(3.0e-8 + XL)) ,"m" ,"Thickness of the gate sidewall spacer" )
`MPRco( EPSRSP ,3.9 ,"" ,1.0 ,inf ,"Relative dielectric constant of the spacer" ) `MPRco( EPSRSP ,3.9 ,"" ,1.0 ,inf ,"Relative dielectric constant of the spacer" )
`MPRoz( TGATE ,3.0e-8 ,"m" ,"Gate height on top of the hard mask" ) `MPRoz( TGATE ,3.0e-8 ,"m" ,"Gate height on top of the hard mask" )
`MPRcz( TMASK ,3.0e-8 ,"m" ,"Height of hard mask on top of the fin" ) `MPRcz( TMASK ,3.0e-8 ,"m" ,"Height of hard mask on top of the fin" )