Updated documentation reflecting changed into bjt models.
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doc/ngspice.texi
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doc/ngspice.texi
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@ -3542,7 +3542,7 @@ conditions.
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General form:
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General form:
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@example
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@example
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DXXXXXXX n+ n- mname <area=val> <pj=val> <off> <ic=vd> <temp=val>
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DXXXXXXX n+ n- mname <area=val> <m=val> <pj=val> <off> <ic=vd> <temp=val>
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+ <dtemp=val>
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+ <dtemp=val>
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@end example
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@end example
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@ -4030,7 +4030,8 @@ $$
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General form:
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General form:
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@example
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@example
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QXXXXXXX NC NB NE <NS> MNAME <AREA> <OFF> <IC=VBE, VCE> <TEMP=T>
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QXXXXXXX nc nb ne <ns> mname <area=val> <areac=val> <areab=val>
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+ <m=val> <off> <ic=vbe, vce> <temp=val> <dtemp=val>
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@end example
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@end example
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@ -4043,18 +4044,22 @@ $$
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NC, NB, and NE are the collector, base, and emitter nodes, respectively.
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@option{nc}, @option{nb}, and @option{ne} are the collector, base, and
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NS is the (optional) substrate node. If unspecified, ground is used.
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emitter nodes, respectively. @option{ns} is the (optional) substrate
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MNAME is the model name, AREA is the area factor, and OFF indicates an
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node.If unspecified, ground is used. @option{mname} is the model name,
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(optional) initial condition on the device for the dc analysis. If the
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@option{area}, @option{areab}, @option{areac} are the area factors, and
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area factor is omitted, a value of 1.0 is assumed. The (optional)
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@option{off} indicates an (optional) initial condition on the device
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initial condition specification using IC=VBE, VCE is intended for use
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for the dc analysis. If the area factor is omitted, a value of 1.0 is
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with the UIC option on the .TRAN control line, when a transient analysis
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assumed. The (optional) initial condition specification using
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is desired starting from other than the quiescent operating point. See
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@option{ic=vbe, vce} is intended for use with the @option{uic}
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the .IC control line description for a better way to set transient
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@command{.tran} control line, when a transient analysis is desired
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initial conditions. The (optional) TEMP value is the temperature at
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starting from other than the quiescent operating point. See the
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which this device is to operate, and overrides the temperature
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@command{.ic} control line description for a better way to set
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specification on the .OPTION control line.
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transient initial conditions. The (optional) @option{temp} value is
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the temperature at which this device is to operate, and overrides the
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temperature specification on the @command{.option} control line. Using
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@option{dtemp} option you can specify instance's temperature relative
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to the circuit temperature.
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@ -4062,6 +4067,18 @@ specification on the .OPTION control line.
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@node BJT Models (NPN/PNP), Junction Field-Effect Transistors (JFETs), Bipolar Junction Transistors (BJTs), Transistors and Diodes
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@node BJT Models (NPN/PNP), Junction Field-Effect Transistors (JFETs), Bipolar Junction Transistors (BJTs), Transistors and Diodes
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@subsection BJT Models (NPN/PNP)
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@subsection BJT Models (NPN/PNP)
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NGSPICE provides two BJT device models. The @option{level} specifies the
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model to be used:
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@itemize @bullet
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@item level=1 : This is the original spice BJT model, and it is the
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default model if the @option{level} keyword is not
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specified on the @command{.model} line.
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@item level=2 : This is a modified version of the original spice
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BJT that models both vertical and lateral devices and
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includes temperature corrections of collector,
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emitter and base resistors.
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@end itemize
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The bipolar junction transistor model in NGSPICE is an adaptation of the
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The bipolar junction transistor model in NGSPICE is an adaptation of the
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integral charge control model of Gummel and Poon. This modified
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integral charge control model of Gummel and Poon. This modified
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@ -4073,93 +4090,141 @@ to be more easily understood by the program user, and to reflect better
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both physical and circuit design thinking.
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both physical and circuit design thinking.
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The dc model is defined by the parameters IS, BF, NF, ISE, IKF, and NE
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The dc model is defined by the parameters @option{IS}, @option{BF},
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which determine the forward current gain characteristics, IS, BR, NR,
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@option{NF}, @option{ISE}, @option{IKF}, amd @option{NE} which determine
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ISC, IKR, and NC which determine the reverse current gain
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the forward current gain characteristics, @option{IS}, @option{BR},
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characteristics, and VAF and VAR which determine the output conductance
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@option{NR}, @option{ISC}, @option{IKR}, and @option{NC} which determine
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for forward and reverse regions. Three ohmic resistances RB, RC, and RE
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the reverse current gain characteristics, and @option{VAF} and @option{VAR}
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are included, where RB can be high current dependent. Base charge
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which determine the output conductance for forward and reverse regions.
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storage is modeled by forward and reverse transit times, TF and TR, the
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Level 2 model includes substrate staturation current @option{ISS}.
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forward transit time TF being bias dependent if desired, and nonlinear
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depletion layer capacitances which are determined by CJE, VJE, and MJE
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Three ohmic resistances @option{RB}, @option{RC}, and @option{RE}
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for the B-E junction , CJC, VJC, and MJC for the B-C junction and CJS,
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are included, where @option{RB} can be high current dependent. Base charge
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VJS, and MJS for the C-S (Collector-Substrate) junction. The
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storage is modeled by forward and reverse transit times, @option{TF} and
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temperature dependence of the saturation current, IS, is determined by
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@option{TR}, the forward transit time @option{TF} being bias dependent if
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the energy-gap, EG, and the saturation current temperature exponent,
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desired, and nonlinear depletion layer capacitances which are determined by
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XTI. Additionally base current temperature dependence is modeled by the
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@option{CJE}, @option{VJE}, and @option{NJE} for the B-E junction, @option{CJC},
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beta temperature exponent XTB in the new model. The values specified
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@option{VJC}, and @option{NJC} for the B-C junction and @option{CJS},
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are assumed to have been measured at the temperature TNOM, which can be
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@option{VJS}, and @option{MJS} for the C-S (Collector-Substrate) junction.
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specified on the .OPTIONS control line or overridden by a specification
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Level 2 model defines a substrate capacitance that will be connected to
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on the .MODEL line.
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device's base or collector, to model lateral or vertical devices.
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The temperature dependence of the saturation currents, @option{IS} and
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@option{ISS} (for level 2 model), is determined by the energy-gap,
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@option{EG}, and the saturation current temperature exponent, @option{XTI}.
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Additionally base current temperature dependence is modeled by the beta
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temperature exponent @option{XTB} in the new model. The values specified
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are assumed to have been measured at the temperature @option{TNOM}, which
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can be specified on the @command{.options} control line or overridden by
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a specification on the @command{.model} line.
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The BJT parameters used in the modified Gummel-Poon model are listed
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The BJT parameters used in the modified Gummel-Poon model are listed
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below. The parameter names used in earlier versions of SPICE2 are still
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below. The parameter names used in earlier versions of SPICE2 are still
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accepted.
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accepted.
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Modified Gummel-Poon BJT Parameters.
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Modified Gummel-Poon BJT Parameters:
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@multitable @columnfractions .1 .45 .15 .15 .15 .1
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@multitable @columnfractions .1 .40 .10 .15 .15 .1
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@item name @tab parameter @tab units @tab default @tab example @tab area
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@item name @tab parameter @tab units @tab default @tab example @tab scale factor
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@item IS @tab transport saturation current @tab A @tab 1.0e-16 @tab
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@item SUBS @tab substrate connection: 1 for
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1.0e-15 @tab *
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vertical geometry, -1 for
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@item BF @tab ideal maximum forward beta @tab - @tab 100 @tab 100
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lateral geometry.
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@item NF @tab forward current emission coefficient @tab - @tab 1.0 @tab 1
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(level 2 only) @tab 1 @tab
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@item VAF @tab forward Early voltage @tab V @tab infinite @tab 200
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@tab 1.0e-15 @tab
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@item IKF @tab corner for forward beta current roll-off @tab A @tab
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@item IS @tab transport saturation current @tab A @tab 1.0e-16
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infinite @tab 0.01 @tab *
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@tab 1.0e-15 @tab area
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@item ISE @tab B-E leakage saturation current @tab A @tab 0 @tab 1.0e-13
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@item ISS @tab reverse saturation current,
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@tab *
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substrate-to-collector for
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@item NE @tab B-E leakage emission coefficient @tab - @tab 1.5 @tab 2
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vertical device or
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@item BR @tab ideal maximum reverse beta @tab - @tab 1 @tab 0.1
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substrate-to-base for lateral
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@item NR @tab reverse current emission coefficient @tab - @tab 1
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(level 2 only) @tab A @tab 1.0e-16
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@tab 1
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@tab 1.0e-15 @tab area
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@item VAR @tab reverse Early voltage @tab V @tab infinite @tab 200
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@item IKR @tab corner for reverse beta high current roll-off
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@item BF @tab ideal maximum forward beta @tab - @tab 100 @tab 100
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@tab A @tab infinite @tab 0.01 @tab *
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@item NF @tab forward current emission
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@item ISC @tab B-C leakage saturation current @tab A @tab 0 @tab 1.0e-13
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coefficient @tab - @tab 1.0 @tab 1
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@tab *
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@item VAF @tab forward Early voltage @tab V @tab infinite @tab 200
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@item NC @tab B-C leakage emission coefficient @tab - @tab 2 @tab 1.5
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@item IKF @tab corner for forward beta
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@item RB @tab zero bias base resistance @tab Z @tab 0 @tab 100 @tab *
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current roll-off @tab A @tab infinite
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@item IRB @tab current where base resistance falls halfway to its min
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@tab 0.01 @tab area
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value @tab A @tab infinite @tab 0.1 @tab *
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@item ISE @tab B-E leakage saturation current @tab A @tab 0 @tab 1.0e-13
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@item RBM @tab minimum base resistance at high currents @tab Z @tab RB
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@tab area
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10 @tab *
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@item NE @tab B-E leakage emission coefficient @tab - @tab 1.5 @tab 2
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@item RE @tab emitter resistance @tab Z @tab 0 @tab 1 @tab *
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@item BR @tab ideal maximum reverse beta @tab - @tab 1 @tab 0.1
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@item RC @tab collector resistance @tab Z @tab 0 @tab 10 @tab *
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@item NR @tab reverse current emission coefficient @tab - @tab 1
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@item CJE @tab B-E zero-bias depletion capacitance @tab F @tab 0 @tab
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@tab 1
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2pF @tab *
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@item VAR @tab reverse Early voltage @tab V @tab infinite @tab 200
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@item VJE @tab B-E built-in potential @tab V @tab 0.75 @tab 0.6
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@item IKR @tab corner for reverse beta high current roll-off
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@item MJE @tab B-E junction exponential factor @tab - @tab 0.33 @tab 0.33
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@tab A @tab infinite @tab 0.01 @tab area
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@item TF @tab ideal forward transit time @tab sec @tab 0 @tab 0.1ns
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@item ISC @tab B-C leakage saturation current
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@item XTF @tab coefficient for bias dependence of TF @tab - @tab 0
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(area is "areab" for vertical
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@item VTF @tab voltage describing VBC dependence of TF @tab V @tab infinite
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devices and "areac" for lateral) @tab A @tab 0
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@item ITF @tab high-current parameter for effect on TF @tab A @tab 0
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@tab 1.0e-13 @tab area
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@tab *
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@item PTF @tab excess phase at freq=1.0/(TF*2PI) Hz @tab deg @tab 0
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@item NC @tab B-C leakage emission coefficient @tab - @tab 2 @tab 1.5
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@item CJC @tab B-C zero-bias depletion capacitance @tab F @tab 0 @tab
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@item RB @tab zero bias base resistance @tab Z @tab 0 @tab 100 @tab area
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2pF @tab *
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@item IRB @tab current where base
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@item VJC @tab B-C built-in potential @tab V @tab 0.75 @tab 0.5
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resistance falls halfway
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@item MJC @tab B-C junction exponential factor @tab - @tab 0.33 @tab 0.5
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to its min value @tab A @tab infinite @tab 0.1 @tab area
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@item XCJC @tab fraction of B-C depletion capacitance connected to
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@item RBM @tab minimum base resistance at high currents @tab Z
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@tab RB 10 @tab area
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@item RE @tab emitter resistance @tab Z @tab 0 @tab 1 @tab area
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@item RC @tab collector resistance @tab Z @tab 0 @tab 10 @tab area
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@item CJE @tab B-E zero-bias depletion capacitance @tab F @tab 0
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@tab 2pF @tab area
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@item VJE @tab B-E built-in potential @tab V @tab 0.75 @tab 0.6
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@item MJE @tab B-E junction exponential factor @tab - @tab 0.33 @tab 0.33
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@item TF @tab ideal forward transit time @tab sec @tab 0 @tab 0.1ns
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@item XTF @tab coefficient for bias dependence of TF @tab - @tab 0
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@item VTF @tab voltage describing VBC dependence of TF @tab V @tab infinite
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@item ITF @tab high-current parameter for effect on TF @tab A
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@tab 0 @tab - @tab area
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@item PTF @tab excess phase at freq=1.0/(TF*2PI) Hz @tab deg @tab 0
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@item CJC @tab B-C zero-bias depletion capacitance
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(area is "areab" for vertical
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devices and "areac" for lateral) @tab F @tab 0
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@tab 2pF @tab area
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@item VJC @tab B-C built-in potential @tab V @tab 0.75 @tab 0.5
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@item MJC @tab B-C junction exponential factor @tab - @tab 0.33 @tab 0.5
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@item XCJC @tab fraction of B-C depletion capacitance connected to
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internal base node @tab - @tab 1
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internal base node @tab - @tab 1
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@item TR @tab ideal reverse transit time @tab sec @tab 0 @tab 10ns
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@item TR @tab ideal reverse transit time @tab sec @tab 0 @tab 10ns
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@item CJS @tab zero-bias collector-substrate capacitance @tab F @tab 0
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@item CJS @tab zero-bias collector-substrate capacitance
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@tab 2pF @tab *
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(area is "areac" for vertical devices and
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@item VJS @tab substrate junction built-in potential @tab V @tab 0.75
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"areab" for lateral) @tab F @tab 0
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@item MJS @tab substrate junction exponential factor @tab - @tab 0 @tab 0.5
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@tab 2pF @tab area
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@item XTB @tab forward and reverse beta temperature exponent @tab - @tab
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@item VJS @tab substrate junction built-in potential @tab V @tab 0.75
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@item MJS @tab substrate junction exponential factor @tab - @tab 0 @tab 0.5
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@item XTB @tab forward and reverse beta temperature exponent @tab - @tab
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0
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0
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@item EG @tab energy gap for temperature effect on IS @tab eV @tab 1.11
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@item EG @tab energy gap for temperature effect on IS @tab eV @tab 1.11
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@item XTI @tab temperature exponent for effect on IS @tab - @tab 3
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@item XTI @tab temperature exponent for effect on IS @tab - @tab 3
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@item KF @tab flicker-noise coefficient @tab - @tab 0
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@item KF @tab flicker-noise coefficient @tab - @tab 0
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@item AF @tab flicker-noise exponent @tab - @tab 1
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@item AF @tab flicker-noise exponent @tab - @tab 1
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@item FC @tab coefficient for forward-bias depletion capacitance formula
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@item FC @tab coefficient for forward-bias depletion capacitance formula
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@tab - @tab 0.5 @tab o
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@tab - @tab 0.5 @tab o
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@item TNOM @tab Parameter measurement temperature @tab °C @tab 27 @tab 50
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@item TNOM @tab Parameter measurement temperature @tab °C @tab 27 @tab 50
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@item TRE1 @tab 1st order temperature coefficient for RE
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(level 2 only) @tab 1/°C @tab 0.0 @tab 1e-3
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@item TRE2 @tab 2nd order temperature coefficient for RE
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(level 2 only) @tab 1/°C^2 @tab 0.0 @tab 1e-5
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@item TRC1 @tab 1st order temperature coefficient for RC
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(level 2 only )@tab 1/°C @tab 0.0 @tab 1e-3
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@item TRC2 @tab 2nd order temperature coefficient for RC
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(level 2 only) @tab 1/°C^2 @tab 0.0 @tab 1e-5
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@item TRB1 @tab 1st order temperature coefficient for RB
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(level 2 only) @tab 1/°C @tab 0.0 @tab 1e-3
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@item TRB2 @tab 2nd order temperature coefficient for RB
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(level 2 only) @tab 1/°C^2 @tab 0.0 @tab 1e-5
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@item TRB1 @tab 1st order temperature coefficient for RBM
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(level 2 only) @tab 1/°C @tab TRB1 @tab 1e-3
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@item TRB2 @tab 2nd order temperature coefficient for RBM
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(level 2 only) @tab 1/°C^2 @tab TRB2 @tab 1e-5
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@end multitable
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@end multitable
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@node Junction Field-Effect Transistors (JFETs), JFET Models (NJF/PJF), BJT Models (NPN/PNP), Transistors and Diodes
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@node Junction Field-Effect Transistors (JFETs), JFET Models (NJF/PJF), BJT Models (NPN/PNP), Transistors and Diodes
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@subsection Junction Field-Effect Transistors (JFETs)
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@subsection Junction Field-Effect Transistors (JFETs)
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