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mos1...3: use device temperature for noise analysis too

This commit is contained in:
dwarning 2024-02-15 07:49:06 +01:00
parent a1dbd3f3c8
commit 305cd85c76
3 changed files with 39 additions and 21 deletions
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20
src/spicelib/devices/mos1/mos1noi.c
View File

@ -95,13 +95,19 @@ MOS1noise(int mode, int operation, GENmodel * genmodel, CKTcircuit * ckt,
switch (mode) { switch (mode) {
case N_DENS: case N_DENS:
NevalSrc( & noizDens[MOS1RDNOIZ], & lnNdens[MOS1RDNOIZ], double dtemp;
ckt, THERMNOISE, inst->MOS1dNodePrime, inst->MOS1dNode, if (inst->MOS1tempGiven)
inst->MOS1drainConductance); dtemp = inst->MOS1temp - ckt->CKTtemp + (model->MOS1tnom-CONSTCtoK);
else
dtemp = inst->MOS1dtemp;
NevalSrc( & noizDens[MOS1RSNOIZ], & lnNdens[MOS1RSNOIZ], NevalSrcInstanceTemp( & noizDens[MOS1RDNOIZ], & lnNdens[MOS1RDNOIZ],
ckt, THERMNOISE, inst->MOS1dNodePrime, inst->MOS1dNode,
inst->MOS1drainConductance, dtemp);
NevalSrcInstanceTemp( & noizDens[MOS1RSNOIZ], & lnNdens[MOS1RSNOIZ],
ckt, THERMNOISE, inst->MOS1sNodePrime, inst->MOS1sNode, ckt, THERMNOISE, inst->MOS1sNodePrime, inst->MOS1sNode,
inst->MOS1sourceConductance); inst->MOS1sourceConductance, dtemp);
if (model->MOS1nlev < 3) { if (model->MOS1nlev < 3) {
@ -127,9 +133,9 @@ MOS1noise(int mode, int operation, GENmodel * genmodel, CKTcircuit * ckt,
Sid = 2.0 / 3.0 * beta * vgst * (1.0+alpha+alpha*alpha) / (1.0+alpha) * model->MOS1gdsnoi; Sid = 2.0 / 3.0 * beta * vgst * (1.0+alpha+alpha*alpha) / (1.0+alpha) * model->MOS1gdsnoi;
} }
NevalSrc( & noizDens[MOS1IDNOIZ], & lnNdens[MOS1IDNOIZ], NevalSrcInstanceTemp( & noizDens[MOS1IDNOIZ], & lnNdens[MOS1IDNOIZ],
ckt, THERMNOISE, inst->MOS1dNodePrime, inst->MOS1sNodePrime, ckt, THERMNOISE, inst->MOS1dNodePrime, inst->MOS1sNodePrime,
Sid); Sid, dtemp);
NevalSrc( & noizDens[MOS1FLNOIZ], NULL, ckt, NevalSrc( & noizDens[MOS1FLNOIZ], NULL, ckt,
N_GAIN, inst->MOS1dNodePrime, inst->MOS1sNodePrime, N_GAIN, inst->MOS1dNodePrime, inst->MOS1sNodePrime,

20
src/spicelib/devices/mos2/mos2noi.c
View File

@ -84,13 +84,19 @@ MOS2noise(int mode, int operation, GENmodel * genmodel, CKTcircuit * ckt,
switch (mode) { switch (mode) {
case N_DENS: case N_DENS:
NevalSrc( & noizDens[MOS2RDNOIZ], & lnNdens[MOS2RDNOIZ], double dtemp;
ckt, THERMNOISE, inst->MOS2dNodePrime, inst->MOS2dNode, if (inst->MOS2tempGiven)
inst->MOS2drainConductance); dtemp = inst->MOS2temp - ckt->CKTtemp + (model->MOS2tnom-CONSTCtoK);
else
dtemp = inst->MOS2dtemp;
NevalSrc( & noizDens[MOS2RSNOIZ], & lnNdens[MOS2RSNOIZ], NevalSrcInstanceTemp( & noizDens[MOS2RDNOIZ], & lnNdens[MOS2RDNOIZ],
ckt, THERMNOISE, inst->MOS2dNodePrime, inst->MOS2dNode,
inst->MOS2drainConductance, dtemp);
NevalSrcInstanceTemp( & noizDens[MOS2RSNOIZ], & lnNdens[MOS2RSNOIZ],
ckt, THERMNOISE, inst->MOS2sNodePrime, inst->MOS2sNode, ckt, THERMNOISE, inst->MOS2sNodePrime, inst->MOS2sNode,
inst->MOS2sourceConductance); inst->MOS2sourceConductance, dtemp);
if (model->MOS2nlev < 3) { if (model->MOS2nlev < 3) {
@ -116,9 +122,9 @@ MOS2noise(int mode, int operation, GENmodel * genmodel, CKTcircuit * ckt,
Sid = 2.0 / 3.0 * beta * vgst * (1.0+alpha+alpha*alpha) / (1.0+alpha) * model->MOS2gdsnoi; Sid = 2.0 / 3.0 * beta * vgst * (1.0+alpha+alpha*alpha) / (1.0+alpha) * model->MOS2gdsnoi;
} }
NevalSrc( & noizDens[MOS2IDNOIZ], & lnNdens[MOS2IDNOIZ], NevalSrcInstanceTemp( & noizDens[MOS2IDNOIZ], & lnNdens[MOS2IDNOIZ],
ckt, THERMNOISE, inst->MOS2dNodePrime, inst->MOS2sNodePrime, ckt, THERMNOISE, inst->MOS2dNodePrime, inst->MOS2sNodePrime,
Sid); Sid, dtemp);
NevalSrc( & noizDens[MOS2FLNOIZ], NULL, ckt, NevalSrc( & noizDens[MOS2FLNOIZ], NULL, ckt,
N_GAIN, inst->MOS2dNodePrime, inst->MOS2sNodePrime, N_GAIN, inst->MOS2dNodePrime, inst->MOS2sNodePrime,

20
src/spicelib/devices/mos3/mos3noi.c
View File

@ -84,13 +84,19 @@ MOS3noise(int mode, int operation, GENmodel * genmodel, CKTcircuit * ckt,
switch (mode) { switch (mode) {
case N_DENS: case N_DENS:
NevalSrc( & noizDens[MOS3RDNOIZ], & lnNdens[MOS3RDNOIZ], double dtemp;
ckt, THERMNOISE, inst->MOS3dNodePrime, inst->MOS3dNode, if (inst->MOS3tempGiven)
inst->MOS3drainConductance); dtemp = inst->MOS3temp - ckt->CKTtemp + (model->MOS3tnom-CONSTCtoK);
else
dtemp = inst->MOS3dtemp;
NevalSrc( & noizDens[MOS3RSNOIZ], & lnNdens[MOS3RSNOIZ], NevalSrcInstanceTemp( & noizDens[MOS3RDNOIZ], & lnNdens[MOS3RDNOIZ],
ckt, THERMNOISE, inst->MOS3dNodePrime, inst->MOS3dNode,
inst->MOS3drainConductance, dtemp);
NevalSrcInstanceTemp( & noizDens[MOS3RSNOIZ], & lnNdens[MOS3RSNOIZ],
ckt, THERMNOISE, inst->MOS3sNodePrime, inst->MOS3sNode, ckt, THERMNOISE, inst->MOS3sNodePrime, inst->MOS3sNode,
inst->MOS3sourceConductance); inst->MOS3sourceConductance, dtemp);
if (model->MOS3nlev < 3) { if (model->MOS3nlev < 3) {
@ -116,9 +122,9 @@ MOS3noise(int mode, int operation, GENmodel * genmodel, CKTcircuit * ckt,
Sid = 2.0 / 3.0 * beta * vgst * (1.0+alpha+alpha*alpha) / (1.0+alpha) * model->MOS3gdsnoi; Sid = 2.0 / 3.0 * beta * vgst * (1.0+alpha+alpha*alpha) / (1.0+alpha) * model->MOS3gdsnoi;
} }
NevalSrc( & noizDens[MOS3IDNOIZ], & lnNdens[MOS3IDNOIZ], NevalSrcInstanceTemp( & noizDens[MOS3IDNOIZ], & lnNdens[MOS3IDNOIZ],
ckt, THERMNOISE, inst->MOS3dNodePrime, inst->MOS3sNodePrime, ckt, THERMNOISE, inst->MOS3dNodePrime, inst->MOS3sNodePrime,
Sid); Sid, dtemp);
NevalSrc( & noizDens[MOS3FLNOIZ], NULL, ckt, NevalSrc( & noizDens[MOS3FLNOIZ], NULL, ckt,
N_GAIN, inst->MOS3dNodePrime, inst->MOS3sNodePrime, N_GAIN, inst->MOS3dNodePrime, inst->MOS3sNodePrime,