update va code from version 504.7 to 504.9.1
This commit is contained in:
dwarning
parent
95ed4ef3d7
commit
2a2497ec62
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@ -1,3 +1,7 @@
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2011-07-30 Dietmar Warning
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* adms/ekv/admsva/ekv.va: semicolon after macro expl was wrong
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* adms/mextram/admsva: update va code from version 504.7 to 504.9.1
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2011-07-27 Holger Vogt
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* inpcom.c: nested parens, line 2963 ff
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* cmutil.c: inlude ngspice.h for NaN
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@ -152,8 +152,11 @@ Vsc3 = Vsc4 - Vc3c4 ;
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Vfe = VDE_T * (1.0 - pow(`AJE , -1.0 / PE));
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a_VDE = 0.1 * VDE_T;
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`min_logexp(Vje, Vb2e1, Vfe, a_VDE);
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Vte = VDE_T / (1.0 - PE) * (1.0 - pow(1.0 - Vje / VDE_T, 1.0 - PE)) +
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`min_logexp(Vje, Vb2e1, Vfe, a_VDE);
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// RvdT, November 2008, E0BE to be re-used in EB- Zener tunnel model:
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E0BE = pow(1.0 - Vje * inv_VDE_T, 1.0 - PE) ;
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Vte = VDE_T / (1.0 - PE) * (1.0 - E0BE) +
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`AJE * (Vb2e1 - Vje);
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// Effective collector junction capacitance bias
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@ -208,7 +211,32 @@ Vsc3 = Vsc4 - Vc3c4 ;
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Ib3 = IBR_TM * (eVb1c4 - 1.0) /
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(tmpExp + exp(0.5 * VLR * VtINV)) +
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_circuit_gmin * Vb1c4;
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// begin RvdT, November 2008, MXT504.8_alpha
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// Base-emitter tunneling current
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// max E-field E0BE calculated in BE depletion charge model:
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if (IZEB > 0.0 && NZEB > 0.0 && Vb2e1 < 0)
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begin
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`expLin(eZEB, nZEB_T * (1 - (pow2_2mPE/(2.0*E0BE))))
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// Force all derivatives at Vb2e1=0 to zero by using in DZEB a
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// modified dE0BE expression for E0BE:
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x = Vb2e1 * inv_VDE_T ;
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dE0BE = pow(- x, -2.0-PE)*(PE*(1-PE*PE-3*x*(PE-1))-6*x*x*(PE-1+x)) * `one_sixth ;
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`expLin(edZEB, Vb2e1 * pow2_2mPE * nZEB_T / (VGZEB_T * dE0BE ))
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DZEB = - Vb2e1 - VGZEB_T * dE0BE * (1 - edZEB) / (pow2_2mPE * nZEB_T) ;
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Izteb = 2.0 * IZEB_TM * DZEB * E0BE * eZEB * inv_VDE_T * pow2_PEm2 ;
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end
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else
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begin
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DZEB = 0 ;
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Izteb = 0 ;
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end
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// end RvdT, November 2008, MXT504.8_alpha
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// Iex, Isub (XIex, XIsub)
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g1 = If0 * eVb1c4;
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@ -220,7 +248,21 @@ Vsc3 = Vsc4 - Vc3c4 ;
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`ifdef SUBSTRATE
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Isub = 2.0 * ISS_TM * (eVb1c4 - 1.0) /
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(1.0 + sqrt(1.0 + 4.0 * (IS_TM / IKS_TM) * eVb1c4));
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Isf = ISS_TM * (eVsc1 - 1.0);
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// until504.8: Isf = ISS_TM * (eVsc1 - 1.0);
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// New 504.9:
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if (ICSS < 0.0)
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// this clause is to implement backwards compatibility
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begin
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Isf = ISS_TM * (eVsc1 - 1.0);
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end
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else
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begin
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Isf = ICSS_TM * (eVsc1 - 1.0);
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end
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// End: New 504.9.
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`endif
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XIex =0.0;
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@ -341,8 +383,10 @@ Vsc3 = Vsc4 - Vc3c4 ;
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Vc3c4 * Vc3c4 * GCCex_TM +
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Vc4c1 * Vc4c1 * GCCin_TM +
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Vbb1 * Vbb1 / RBC_TM +
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Ib1b2 * Vb1b2 +
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(Ib1 + Ib2) * Vb2e1 +
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Ib1b2 * Vb1b2 +
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// 504.8: Nov. 2008, RvdT, TU_Delft: Zener current contribution added:
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// Izteb > 0 for Vb2e1 < 0, hence the minus sign:
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(Ib1 + Ib2 - Izteb) * Vb2e1 +
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Ib1_s * Vb1e1 +
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`ifdef SUBSTRATE
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(Iex + Ib3) * Vb1c4 + XIex * Vbc3 +
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@ -361,7 +405,7 @@ Vsc3 = Vsc4 - Vc3c4 ;
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Qte = (1.0 - XCJE) * CJE_TM * Vte;
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`min_logexp(Vje_s, Vb1e1, Vfe, a_VDE);
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Qte_s = XCJE * CJE_TM * (VDE_T / (1.0 - PE) *
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(1.0 - pow(1.0 - Vje_s / VDE_T, 1.0 - PE)) +
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(1.0 - pow(1.0 - Vje_s * inv_VDE_T, 1.0 - PE)) +
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`AJE * (Vb1e1 - Vje_s));
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Qtc = XCJC * CJC_TM * Vtc;
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@ -413,7 +457,7 @@ Vsc3 = Vsc4 - Vc3c4 ;
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Qb1b2 = 0.0;
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if (EXPHI == 1)
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begin
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dVteVje = pow(1.0 - Vje / VDE_T, -PE) - `AJE;
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dVteVje = pow(1.0 - Vje * inv_VDE_T, -PE) - `AJE;
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Vb2e1Vfe = (Vb2e1 - Vfe) / a_VDE;
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if (Vb2e1Vfe < 0.0)
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dVjeVb2e1 = 1.0 / (1.0 + exp(Vb2e1Vfe));
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@ -430,8 +474,8 @@ Vsc3 = Vsc4 - Vc3c4 ;
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Qb1b2 = 0.2 * Vb1b2 * (dQteVb2e1 + dQbeVb2e1 + dQeVb2e1);
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Qbc = Qbe_qs / 3.0 + Qbc_qs;
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Qbe = 2.0 * Qbe_qs / 3.0;
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Qbc = Qbe_qs * `one_third + Qbc_qs;
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Qbe = 2.0 * Qbe_qs * `one_third ;
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end
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else
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begin
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@ -446,7 +490,10 @@ Vsc3 = Vsc4 - Vc3c4 ;
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I(c1, c2) <+ TYPE * Ic1c2;
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I(c2, e1) <+ TYPE * In;
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I(b1, e1) <+ TYPE * Ib1_s;
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I(b2, e1) <+ TYPE * (Ib1 + Ib2);
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// begin RvdT, 28-10-2008, MXT504.8_alpha
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// contribution tunnel current added
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I(b2, e1) <+ TYPE * (Ib1 + Ib2 - Izteb);
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`ifdef SUBSTRATE
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I(b1, s) <+ TYPE * Isub;
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I(b, s) <+ TYPE * XIsub;
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@ -547,13 +594,14 @@ else
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powerRCCxx = common * GCCxx_TM; // Collector resistance
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powerRCCex = common * GCCex_TM; // Collector resistance
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powerRCCin = common * GCCin_TM; // Collector resistance
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powerRBV = common / Rb2 * (4.0 * eVb1b2 + 5.0) / 3.0; // Variable base resistance
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powerRBV = common / Rb2 * (4.0 * eVb1b2 + 5.0) * `one_third ; // Variable base resistance
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// Collector current shot noise
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powerCCS = 2.0 * `QQ * (If + Ir) / qBI;
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// Forward base current shot noise and 1/f noise
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powerFBCS = 2.0 * `QQ * (abs(Ib1) + abs(Ib2));
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// 504.8, Nov. 2008, RvdT, TU-Delft: added Zener current to shot noise
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powerFBCS = 2.0 * `QQ * (abs(Ib1) + abs(Ib2) + abs(Izteb));
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powerFBC1fB1 = (1.0 - XIBI) * pow((abs(Ib1) / (1 - XIBI)), AF) * KF_M;
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exponentFBC1fB2 = (2.0 * (MLF - 1.0)) + (AF * (2.0 - MLF));
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powerFBC1fB2 = KFN_M * pow(abs(Ib2), exponentFBC1fB2);
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@ -606,12 +654,12 @@ else
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I(b2, e1) <+ flicker_noise(powerFBC1fB2, 1); // "bas_emi_forw"
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I(e1, b1) <+ white_noise(powerEBSCS); // "emi_bas_side"
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I(e1, b1) <+ flicker_noise(powerEBSC1f, 1); // "emi_bas_side"
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I(b1, c1) <+ white_noise(powerRBCS); // "bas_col_reve"
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I(b1, c1) <+ flicker_noise(powerRBC1f, 1); // "bas_col_reve"
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I(b1, c1) <+ white_noise(powerExCS); // "Ext_bas_col"
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I(b1, c1) <+ flicker_noise(powerExC1f, 1); // "Ext_bas_col"
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I(b, c1) <+ white_noise(powerExCSMOD); // "Ext_bas_col"
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I(b, c1) <+ flicker_noise(powerExC1fMOD, 1); // "Ext_bas_col"
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I(b1, c4) <+ white_noise(powerRBCS); // "bas_col_reve"
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I(b1, c4) <+ flicker_noise(powerRBC1f, 1); // "bas_col_reve"
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I(b1, c4) <+ white_noise(powerExCS); // "Ext_bas_col"
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I(b1, c4) <+ flicker_noise(powerExC1f, 1); // "Ext_bas_col"
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I(b, c3) <+ white_noise(powerExCSMOD); // "Ext_bas_col"
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I(b, c3) <+ flicker_noise(powerExC1fMOD, 1); // "Ext_bas_col"
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`ifdef SUBSTRATE
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I(b1, s) <+ white_noise(powerSubsCS_B1S); // "bas_sub_current"
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I(b, s) <+ white_noise(powerSubsCS_BS); // "bas_sub_current"
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@ -8,7 +8,9 @@
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`define C2K 273.15
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`define KB 1.3806226e-23
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`define QQ 1.6021918e-19
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`define KBdivQQ 8.61708691805812512584e-5
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`define KBdivQQ 8.61708691805812512584e-5
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`define one_third 0.33333333333333333333
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`define one_sixth 0.16666666666666666667
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`define VDLOW 0.05
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`define AJE 3.0
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`define AJC 2.0
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@ -80,4 +82,3 @@
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else\
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result = vlim + ln(1.0 + (x - vlim));\
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result=result
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@ -1,6 +1,6 @@
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// Initialze model constants
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// Impact ionization constants (NPN - PNP)
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// Impact ionization constants (NPN - PNP)
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if (TYPE == 1) begin
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@ -31,3 +31,44 @@ Xext1 = 1.0 - XEXT;
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KF_M = KF * pow(MULT, 1.0 - AF);
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KFN_M = KFN * pow(MULT, 1.0 - (2.0 * (MLF - 1.0) + AF * (2.0 - MLF)));
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// begin: RvdT, November 2008 ; Zener tunneling current model
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pow2_2mPE = pow(2.0, 2.0 - PE);
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pow2_PEm2 = 1.0 / pow2_2mPE;
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// Reference Temperature expressed in Kelvin:
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Trk = TREF + `C2K;
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// begin: RvdT, November 2008 ; Zener tunneling current model
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//
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// Comment added March 2009: this assumes VGZEBOK as a model parameter.
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//
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// Bandgap for Zener tunnel current model at reference temperature in eV:
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// VGZEB_Tr = VGZEBOK - AVGEB*Trk*Trk / (Trk + TVGEB) ;
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// `max_logexp(VGZEB_Tr, VGZEBOK - AVGEB*Trk*Trk / (Trk + TVGEB), 0.05, 0.1) ;
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// end: RvdT, November 2008
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// begin: RvdT March 2009:
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// to decrease parameter interdependency,
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// use VGZEB as a parameter, instead of VGZEBOK:
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// VGZEB : bandgap for Zener tunneling at T = Tref,
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// VGZEBOK : bandgap for Zener tunneling at T = 0 K.
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// `max_logexp(VGZEBOK, VGZEB + AVGEB*Trk*Trk / (Trk + TVGEB), 0.05, 0.1);
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//dw can't expand the macro `max_logexp here - using the code
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_x = VGZEB + AVGEB*Trk*Trk / (Trk + TVGEB);
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_x0 = 0.05;
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_a = 0.1;
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_dxa = (_x - _x0) / (_a);
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if (_x < _x0)
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VGZEBOK = _x0 + _a * ln(1.0 + exp(_dxa));
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else
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VGZEBOK = _x + _a * ln(1.0 + exp(-_dxa));
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VGZEB_Tr = VGZEB;
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// end: RvdT March 2009: use VGZEB as a parameter, instead of VGZEBOK:
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inv_VGZEB_Tr = 1.0 / VGZEB_Tr;
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inv_VDE = 1.0 / VDE;
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// end: RvdT, November 2008 ; Zener tunneling current model
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@ -36,17 +36,8 @@ module bjt504_va (c, b, e, s, dt);
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analog begin
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//`ifdef insideADMS
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// @(initial_model) begin
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//`else
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// @(initial_step or initial_step("static")) begin
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//`endif
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`include "initialize.inc"
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`include "tscaling.inc"
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// end // initial_step
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`include "evaluate.inc"
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`include "opinfo.inc"
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@ -6,8 +6,22 @@ begin
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// The external currents and the current gain
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OP_ic = I(<c>); // External DC collector current
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OP_ib = I(<b>); // External DC base Current
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OP_betadc = OP_ic / OP_ib; // External DC Current gain
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OP_betadc = OP_ic / OP_ib; // External DC Current gain
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// begin added in MXT 504.9:
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OP_ie = I(<e>); // External DC emitter current
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OP_vbe = V(b, e); // External base-emitter bias
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OP_vce = V(c, e); // External collector-emitter bias
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OP_vbc = V(b, c); // External base-collector bias
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`ifdef SUBSTRATE
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OP_is = I(<s>); // External DC emitter current
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OP_vse = V(s, e); // External substrate-emitter bias
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OP_vbs = V(b, s); // External base-substrate bias
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OP_vsc = V(s, c); // External substrate-collector bias
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`endif
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// end added in MXT 504.9:
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// The internal voltage differences
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OP_vb2e1 = Vb2e1; // Internal base-emiter bias
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@ -27,6 +41,11 @@ OP_ic1c2 = Ic1c2; // Epilayer current
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OP_ib1b2 = Ib1b2; // Pinched-base current
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OP_ib1 = Ib1; // Ideal forward base current
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OP_sib1 = Ib1_s; // Ideal side-wall base current
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//
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// 504.8, RvdT, TU-Delft April. 2009:
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//
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OP_izteb = Izteb ; // Zener tunneling current
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//
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OP_ib2 = Ib2; // Non-ideal forward base current
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OP_ib3 = Ib3; // Non-ideal reverse base current
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OP_iavl = Iavl; // Avalanche current
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@ -35,7 +54,7 @@ OP_xiex = XIex; // Extrinsic reverse base current
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`ifdef SUBSTRATE
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OP_isub = Isub; // Substrate current
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OP_xisub = XIsub; // Substrate current
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OP_isf = Isf; // Substrate failure current
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OP_isf = Isf; // Substrate-collector current
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`endif
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OP_ire = - Vee1 / RE_TM; // Current through emiter resistance
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OP_irbc = Vbb1 / RBC_TM; // Current through constant base resistance
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@ -108,7 +127,7 @@ OP_rcbli = RCCin_TM; // Extrinsic buried layer resistance
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`ifdef SUBSTRATE
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OP_gs = ddx(Isub, V(b)) + ddx(Isub, V(b1)); // Conductance parasitic PNP transitor
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OP_xgs = ddx(XIsub, V(b)) ; // Conductance parasitic PNP transistor
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OP_gsf = ddx(Isf, V(s)) ; // Conductance substrate failure current
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OP_gsf = ddx(Isf, V(s)) ; // Conductance substrate-collector current
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`endif
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@ -7,6 +7,22 @@
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`OPP(OP_ib, A, External DC base current)
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`OPP(OP_betadc, , External DC current gain Ic/Ib)
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// begin added in MXT 504.9:
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`OPP(OP_ie, A, External DC emitter current)
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// The external biases
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`OPP(OP_vbe, V, External base-emitter bias)
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`OPP(OP_vce, V, External collector-emitter bias)
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`OPP(OP_vbc, V, External base-collector bias)
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`ifdef SUBSTRATE
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`OPP(OP_is, A, External DC substrate current)
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`OPP(OP_vse, V, External substrate-emitter bias)
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`OPP(OP_vbs, V, External base-substrate bias)
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`OPP(OP_vsc, V, External substrate-collector bias)
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`endif
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// end added in MXT 504.9
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// The internal biases
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`OPP(OP_vb2e1, V, Internal base-emitter bias)
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`OPP(OP_vb2c2, V, Internal base-collector bias)
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@ -22,15 +38,22 @@
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`OPP(OP_ib1b2, A, Pinched-base current)
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`OPP(OP_ib1, A, Ideal forward base current)
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`OPP(OP_sib1, A, Ideal side-wall base current)
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//
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// 504.8, RvdT, TU-Delft April. 2009, Zener tunneling current:
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//
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`OPP(OP_izteb, A, Zener tunneling current in the emitter base junction)
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//
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`OPP(OP_ib2, A, Non-ideal forward base current)
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`OPP(OP_ib3, A, Non-ideal reverse base current)
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`OPP(OP_iavl, A, Avalanche current)
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`OPP(OP_iex, A, Extrinsic reverse base current)
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`OPP(OP_xiex, A, Extrinsic reverse base current)
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`ifdef SUBSTRATE
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`OPP(OP_isub, A, Substrate current)
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`OPP(OP_xisub, A, Substrate current)
|
||||
`OPP(OP_isf, A, Substrate failure current)
|
||||
`endif
|
||||
`OPP(OP_ire, A, Current through emitter resistance)
|
||||
`OPP(OP_irbc, A, Current through constant base resistance)
|
||||
`OPP(OP_ircblx, A, Current through extrinsic buried layer resistance)
|
||||
|
|
@ -50,7 +73,9 @@
|
|||
`OPP(OP_xqtex, C, Extrinsic base-collector depletion charge)
|
||||
`OPP(OP_qex, C, Extrinsic base-collector diffusion charge)
|
||||
`OPP(OP_xqex, C, Extrinsic base-collector diffusion charge)
|
||||
`ifdef SUBSTRATE
|
||||
`OPP(OP_qts, C, Collector-substrate depletion charge)
|
||||
`endif
|
||||
|
||||
//Small signal equivalent circuit conductances and resistances
|
||||
`OPP(OP_gx, S, Forward transconductance)
|
||||
|
|
@ -76,10 +101,11 @@
|
|||
`OPP(OP_rcc, Ohm, Collector contact resistance)
|
||||
`OPP(OP_rcblx, Ohm, Extrinsic buried layer resistance)
|
||||
`OPP(OP_rcbli, Ohm, Intrinsic buried layer resistance)
|
||||
`ifdef SUBSTRATE
|
||||
`OPP(OP_gs, S, Conductance parasistic PNP transistor)
|
||||
`OPP(OP_xgs, S, Conductance parasistic PNP transistor)
|
||||
`OPP(OP_gsf, S, Conductance substrate failure current)
|
||||
|
||||
`endif
|
||||
//Small signal equivalent circuit capacitances
|
||||
`OPP(OP_scbe, F, Capacitance sidewall b-e junction)
|
||||
`OPP(OP_cbex, F, Capacitance floor b-e junction)
|
||||
|
|
@ -94,8 +120,9 @@
|
|||
`OPP(OP_cb1b2x, F, Cross-capacitance AC current crowding)
|
||||
`OPP(OP_cb1b2y, F, Cross-capacitance AC current crowding)
|
||||
`OPP(OP_cb1b2z, F, Cross-capacitance AC current crowding)
|
||||
`ifdef SUBSTRATE
|
||||
`OPP(OP_cts, F, Capacitance s-c junction)
|
||||
|
||||
`endif
|
||||
//Approximate small signal equivalent circuit
|
||||
`OPP(OP_gm, S,transconductance)
|
||||
`OPP(OP_beta, , Current amplification)
|
||||
|
|
@ -113,7 +140,9 @@
|
|||
`OPP(OP_vb2c2star, V, Physical value of internal base-collector bias)
|
||||
|
||||
//self-heating
|
||||
`ifdef SELFHEATING
|
||||
`OPP(OP_pdiss, W, Dissipation)
|
||||
`endif
|
||||
`OPP(OP_tk, K, Actual temperature)
|
||||
|
||||
//help variables
|
||||
|
|
|
|||
|
|
@ -29,6 +29,12 @@ parameter real MLF = 2.0 from [0.1:inf)
|
|||
`ATTR(info="Non-ideality factor of the non-ideal forward base current");
|
||||
parameter real XIBI = 0.0 from [0.0:1.0]
|
||||
`ATTR(info="Part of ideal base current that belongs to the sidewall");
|
||||
// begin: RvdT, November 2008, BE tunneling current parameters:
|
||||
parameter real IZEB = 0.0 from [0.0:inf)
|
||||
`ATTR(info="Pre-factor of emitter-base Zener tunneling current");
|
||||
parameter real NZEB = 22.0 from [0.0:inf)
|
||||
`ATTR(info="Coefficient of emitter-base Zener tunneling current");
|
||||
// end: RvdT, November 2008, EB tunneling current parameters:
|
||||
parameter real BRI = 7.0 from [1.0e-4:inf)
|
||||
`ATTR(info="Ideal reverse current gain");
|
||||
parameter real IBR = 1.0f from [0.0:inf)
|
||||
|
|
@ -88,10 +94,9 @@ parameter real MC = 0.5 from [0.0:1.0)
|
|||
parameter real XCJC = 32.0m from [0.0:1.0]
|
||||
`ATTR(info="Fraction of CB depletion capacitance under the emitter");
|
||||
// RvdT, 30-11-2007: introduced RCBLX and RCBLI:
|
||||
//dw clipped to 1m and default to 1 Ohm as long adms-ngspice has no working node-collapsing
|
||||
parameter real RCBLX = 1.0 from [1.0m:inf)
|
||||
parameter real RCBLX = 0.0 from [0.0:inf)
|
||||
`ATTR(info="Resistance Collector Buried Layer eXtrinsic");
|
||||
parameter real RCBLI = 1.0 from [1.0m:inf)
|
||||
parameter real RCBLI = 0.0 from [0.0:inf)
|
||||
`ATTR(info="Resistance Collector Buried Layer Intrinsic");
|
||||
parameter real CBCO = 0.0 from [0.0:inf)
|
||||
`ATTR(info="Collector-base overlap capacitance");
|
||||
|
|
@ -137,6 +142,12 @@ parameter real VGC = 1.18 from [0.1:inf)
|
|||
`ATTR(info="Band-gap voltage of the collector");
|
||||
parameter real VGJ = 1.15 from [0.1:inf)
|
||||
`ATTR(info="Band-gap voltage recombination emitter-base junction");
|
||||
parameter real VGZEB = 1.15 from [0.1:inf)
|
||||
`ATTR(info="Band-gap voltage at Tref of Zener effect emitter-base junction");
|
||||
parameter real AVGEB = 4.73e-4 from (-inf:inf)
|
||||
`ATTR(info="Temperature coefficient band-gap voltage for Zener effect emitter-base junction");
|
||||
parameter real TVGEB = 636.0 from [0.0:inf)
|
||||
`ATTR(info="Temperature coefficient band-gap voltage for Zener effect emitter-base junction");
|
||||
parameter real DVGTE = 0.05
|
||||
`ATTR(info="Band-gap voltage difference of emitter stored charge");
|
||||
parameter real DAIS = 0.0
|
||||
|
|
@ -153,7 +164,9 @@ parameter integer KAVL = 0 from [0:1]
|
|||
|
||||
`ifdef SUBSTRATE
|
||||
parameter real ISS = 48.0a from [0.0:inf)
|
||||
`ATTR(info="Base-substrate saturation current");
|
||||
`ATTR(info="Base-substrate saturation current");
|
||||
parameter real ICSS = -1.0 from (-inf:inf)
|
||||
`ATTR(info="Collector-substrate ideal saturation current");
|
||||
parameter real IKS = 250.0u from [1.0p:inf)
|
||||
`ATTR(info="Base-substrate high injection knee current");
|
||||
parameter real CJS = 315.0f from [0:inf)
|
||||
|
|
@ -165,7 +178,9 @@ parameter real PS = 0.34 from (0.01:0.99)
|
|||
parameter real VGS = 1.20 from [0.1:inf)
|
||||
`ATTR(info="band-gap voltage of the substrate");
|
||||
parameter real AS = 1.58
|
||||
`ATTR(info="Substrate temperature coefficient");
|
||||
`ATTR(info="Substrate temperature coefficient");
|
||||
parameter real ASUB = 2.0
|
||||
`ATTR(info="Temperature coefficient for mobility of minorities in the substrate");
|
||||
`endif
|
||||
|
||||
`ifdef SELFHEATING
|
||||
|
|
@ -189,6 +204,6 @@ parameter integer TYPE = 1 from [-1:1]
|
|||
`else
|
||||
parameter integer TYPE = 1 from [-1:1] exclude 0;
|
||||
`endif
|
||||
//parameter real GMIN = 1.0e-12 from (0:1e-10]
|
||||
// `ATTR(info="Minimum conductance");
|
||||
//
|
||||
parameter real GMIN = 1.0e-13 from (0:1e-10]
|
||||
`ATTR(info="Minimum conductance");
|
||||
|
||||
|
|
|
|||
|
|
@ -14,7 +14,7 @@
|
|||
`endif
|
||||
|
||||
// Temperature variables
|
||||
Trk = TREF + `C2K;
|
||||
|
||||
|
||||
`ifdef insideADMS
|
||||
Tk = Trk + DTA + Vdt;
|
||||
|
|
@ -29,9 +29,17 @@
|
|||
Vtr = `KBdivQQ * Trk;
|
||||
VtINV = 1.0 / Vt;
|
||||
VtrINV = 1.0 / Vtr;
|
||||
VdtINV = VtINV - VtrINV;
|
||||
|
||||
// Depletion capacitances
|
||||
VdtINV = VtINV - VtrINV;
|
||||
|
||||
lntN = ln(tN) ;
|
||||
|
||||
// begin: RvdT, November 2008, "Zener tunneling model"
|
||||
// VGZEB_T = VGZEBOK - AVGEB*Tk*Tk / (Tk + TVGEB) ;
|
||||
`max_logexp(VGZEB_T, VGZEBOK - AVGEB*Tk*Tk / (Tk + TVGEB), 0.05, 0.1) ;
|
||||
|
||||
// end: RvdT, November 2008, "Zener tunneling model"
|
||||
|
||||
// Depletion capacitances
|
||||
|
||||
UdeT = -3.0 * Vt * ln(tN) + VDE * tN + (1.0 - tN) * VGB;
|
||||
`max_logexp(VDE_T, `VDLOW, UdeT, Vt);
|
||||
|
|
@ -43,8 +51,9 @@
|
|||
UdsT = -3.0 * Vt * ln(tN) + VDS * tN + (1.0 - tN) * VGS;
|
||||
`max_logexp(VDS_T, `VDLOW, UdsT, Vt);
|
||||
`endif
|
||||
|
||||
CJE_T = CJE * pow(VDE / VDE_T, PE);
|
||||
inv_VDE_T = 1.0 / VDE_T ;
|
||||
CJE_T_div_CJE = pow(VDE * inv_VDE_T, PE);
|
||||
CJE_T = CJE * CJE_T_div_CJE ;
|
||||
|
||||
`ifdef SUBSTRATE
|
||||
CJS_T = CJS * pow(VDS / VDS_T, PS);
|
||||
|
|
@ -57,45 +66,80 @@
|
|||
XP_T = XP * CJCscaleINV;
|
||||
|
||||
// Resistances
|
||||
|
||||
RE_T = RE * pow(tN, AE);
|
||||
RBV_T = RBV * pow(tN, AB - AQBO);
|
||||
RBC_T = RBC * pow(tN, AEX);
|
||||
|
||||
// RvdT, November 2008:
|
||||
// Instead of the following definition
|
||||
// RE_T = RE * pow(tN, AE);
|
||||
// we use, here, and in all following powers of tN,
|
||||
// the following computationally cheaper implementation:
|
||||
RE_T = RE * exp(lntN * AE);
|
||||
// This is based on the observation that exp() is faster than pow().
|
||||
// Acknowledgement due to Geoffrey Coram.
|
||||
|
||||
RBV_T = RBV * exp(lntN * (AB - AQBO));
|
||||
RBC_T = RBC * exp(lntN * AEX);
|
||||
|
||||
// RvdT, 30-11-2007: new collector resistances RCCxx_T, RCCex_T, RCCin_T
|
||||
RCCxx_T = RCC * pow(tN, AC);
|
||||
RCCex_T = RCBLX * pow(tN, ACBL);
|
||||
RCCin_T = RCBLI * pow(tN, ACBL);
|
||||
RCCxx_T = RCC * exp(lntN * AC);
|
||||
RCCex_T = RCBLX * exp(lntN * ACBL);
|
||||
RCCin_T = RCBLI * exp(lntN * ACBL);
|
||||
|
||||
RCV_T = RCV * pow(tN, AEPI);
|
||||
RCV_T = RCV * exp(lntN * AEPI);
|
||||
|
||||
// Current gains
|
||||
|
||||
BF_T = BF * pow(tN, AE - AB - AQBO) * exp(-DVGBF * VdtINV);
|
||||
BF_T = BF * exp(lntN * (AE - AB - AQBO)) * exp(-DVGBF * VdtINV);
|
||||
BRI_T = BRI * exp(-DVGBR * VdtINV);
|
||||
|
||||
// Currents and voltages
|
||||
|
||||
IS_T = IS * pow(tN, 4.0 - AB - AQBO + DAIS) * exp(-VGB * VdtINV);
|
||||
IK_T = IK * pow(tN, 1.0 - AB);
|
||||
IBF_T = IBF * pow(tN, 6.0 - 2.0 * MLF) * exp(-VGJ * VdtINV / MLF);
|
||||
IS_T = IS * exp(lntN * (4.0 - AB - AQBO + DAIS)) * exp(-VGB * VdtINV);
|
||||
IK_T = IK * exp(lntN * (1.0 - AB));
|
||||
IBF_T = IBF * exp(lntN * (6.0 - 2.0 * MLF)) * exp(-VGJ * VdtINV / MLF);
|
||||
IBR_T = IBR * tN * tN * exp(-VGC * VdtINV / 2.0);
|
||||
VEF_T = VEF * pow(tN, AQBO) * CJCscaleINV;
|
||||
VER_T = VER * pow(tN, AQBO) * pow(VDE / VDE_T, -PE);
|
||||
|
||||
// begin RvdT, November 2008, MXT504.8_alpha
|
||||
// T-scaling BE tunneling:
|
||||
//
|
||||
x = pow(VGZEB_T * inv_VGZEB_Tr, -0.5) ;
|
||||
// y = pow(VDE_T * inv_VDE, PE) ;
|
||||
// more efficient, because we need both y and 1.0 / y:
|
||||
y = 1.0 / CJE_T_div_CJE ;
|
||||
// definition:
|
||||
// nZEB_T = NZEB* pow(VGZEB_T/VGZEB_Tr, 1.5) * pow(VDE_T / VDE, PE-1) ;
|
||||
// more efficient implementation:
|
||||
// nZEB_T = NZEB* VGZEB_T * VGZEB_T * x * y * VDE /(VDE_T*VGZEB_Tr*VGZEB_Tr) ;
|
||||
nZEB_T = NZEB* VGZEB_T * VGZEB_T * x * y * VDE * inv_VDE_T*inv_VGZEB_Tr*inv_VGZEB_Tr ;
|
||||
|
||||
// definition:
|
||||
// IZEB_T = IZEB* pow(VGZEB_T/VGZEB_Tr, -0.5) * pow(VDE_T / VDE, 2-PE) * exp(NZEB-nZEB_T);
|
||||
// more efficient implementation:
|
||||
IZEB_T = IZEB* x * VDE_T * VDE_T * inv_VDE * inv_VDE * CJE_T_div_CJE * exp(NZEB-nZEB_T) ;
|
||||
//
|
||||
// end RvdT, November 2008, MXT504.8_alpha
|
||||
|
||||
x = exp(lntN * AQBO) ;
|
||||
VEF_T = VEF * x * CJCscaleINV;
|
||||
// VER_T = VER * x * pow(VDE / VDE_T, -PE);
|
||||
VER_T = VER * x * y;
|
||||
|
||||
`ifdef SUBSTRATE
|
||||
ISS_T = ISS * pow(tN, 4.0 - AS) * exp(-VGS * VdtINV);
|
||||
ISS_T = ISS * exp(lntN * (4.0 - AS)) * exp(-VGS * VdtINV);
|
||||
// New 504.9:
|
||||
ICSS_T = ICSS * exp(lntN * (3.5 - 0.5 * ASUB)) * exp(-VGS * VdtINV);
|
||||
// End New 504.9.
|
||||
|
||||
if ((ISS_T > 0.0))
|
||||
IKS_T = IKS * pow(tN, 1.0 - AS) * (IS_T / IS) * (ISS / ISS_T);
|
||||
IKS_T = IKS * exp(lntN * (1.0 - AS)) * (IS_T / IS) * (ISS / ISS_T);
|
||||
else
|
||||
IKS_T = IKS * pow(tN, 1.0 - AS);
|
||||
IKS_T = IKS * exp(lntN * (1.0 - AS));
|
||||
`endif
|
||||
|
||||
// Transit times
|
||||
|
||||
TAUE_T = TAUE * pow(tN, AB - 2.0) * exp(-DVGTE * VdtINV);
|
||||
TAUB_T = TAUB * pow(tN, AQBO + AB - 1.0);
|
||||
TEPI_T = TEPI * pow(tN, AEPI - 1.0);
|
||||
TAUE_T = TAUE * exp(lntN * (AB - 2.0)) * exp(-DVGTE * VdtINV);
|
||||
TAUB_T = TAUB * exp(lntN * (AQBO + AB - 1.0));
|
||||
TEPI_T = TEPI * exp(lntN * (AEPI - 1.0));
|
||||
TAUR_T = TAUR * (TAUB_T + TEPI_T) / (TAUB + TEPI);
|
||||
|
||||
// Avalanche constant
|
||||
|
|
@ -113,7 +157,7 @@
|
|||
|
||||
// Heterojunction features
|
||||
|
||||
DEG_T = DEG * pow(tN, AQBO);
|
||||
DEG_T = DEG * exp(lntN * AQBO);
|
||||
|
||||
`ifdef SELFHEATING
|
||||
// Tempearature scaling of the thermal resistance
|
||||
|
|
@ -127,13 +171,29 @@
|
|||
IK_TM = IK_T * MULT;
|
||||
IBF_TM = IBF_T * MULT;
|
||||
IBR_TM = IBR_T * MULT;
|
||||
IHC_M = IHC * MULT;
|
||||
// RvdT: November 2008, Zener tunneling parameters
|
||||
IZEB_TM = IZEB_T * MULT ;
|
||||
|
||||
// end Zener tunneling parameters
|
||||
|
||||
|
||||
|
||||
|
||||
IHC_M = IHC * MULT;
|
||||
`ifdef SUBSTRATE
|
||||
ISS_TM = ISS_T * MULT;
|
||||
IKS_TM = IKS_T * MULT;
|
||||
ISS_TM = ISS_T * MULT;
|
||||
// New: 504.9
|
||||
ICSS_TM = ICSS_T * MULT;
|
||||
IKS_TM = IKS_T * MULT;
|
||||
`endif
|
||||
CJE_TM = CJE_T * MULT;
|
||||
CJC_TM = CJC_T * MULT;
|
||||
CJE_TM = CJE_T * MULT;
|
||||
CJC_TM = CJC_T * MULT;
|
||||
|
||||
// begin RvdT, 28-10-2008, MXT504.8_alpha
|
||||
// Base-emitter tunneling current Mult scaling:
|
||||
// BTJE_TM = BTJE_T * MULT;
|
||||
// end RvdT, 28-10-2008, MXT504.8_alpha
|
||||
|
||||
|
||||
`ifdef SUBSTRATE
|
||||
CJS_TM = CJS_T * MULT;
|
||||
|
|
|
|||
|
|
@ -1,5 +1,7 @@
|
|||
// Declaration of variables
|
||||
|
||||
real _x, _x0, _a, _dxa;
|
||||
|
||||
real _circuit_gmin;
|
||||
|
||||
// Model constants
|
||||
|
|
@ -8,7 +10,7 @@ real An, Bn;
|
|||
|
||||
// Temperature scaling variables
|
||||
|
||||
real Tk, Trk, tN, Tki, Tamb;
|
||||
real Tk, Trk, tN, Tamb;
|
||||
real Vt, Vtr, VtINV, VtrINV, VdtINV;
|
||||
real Vdt;
|
||||
|
||||
|
|
@ -23,7 +25,16 @@ real RCCxx_T, RCCex_T, RCCin_T;
|
|||
real BF_T, BRI_T;
|
||||
|
||||
real IS_T, IK_T, IBF_T, IBR_T, VEF_T, VER_T;
|
||||
|
||||
|
||||
// RvdT: November 2008, Zener tunneling parameters and variables:
|
||||
real Izteb, IZEB_T, E0BE, dE0BE,nZEB_T, pow2_2mPE, pow2_PEm2, inv_VDE, inv_VDE_T;
|
||||
real eZEB, edZEB, DZEB, VGZEB_T, VGZEB_Tr, inv_VGZEB_Tr, CJE_T_div_CJE ;
|
||||
|
||||
// RvdT: March 2009, Zener tunneling parameters and variables:
|
||||
real VGZEBOK;
|
||||
|
||||
// end Zener tunneling parameters
|
||||
|
||||
real TAUE_T, TAUB_T, TEPI_T, TAUR_T;
|
||||
real BnT, DEG_T, Tk300;
|
||||
|
||||
|
|
@ -32,13 +43,21 @@ real RTH_Tamb;
|
|||
`endif
|
||||
|
||||
`ifdef SUBSTRATE
|
||||
real UdsT, VDS_T, CJS_T, ISS_T, IKS_T;
|
||||
real UdsT, VDS_T, CJS_T, ISS_T, ICSS_T, IKS_T;
|
||||
`endif
|
||||
|
||||
// MULT - scaling variables
|
||||
|
||||
real invMULT;
|
||||
real IS_TM, IK_TM, IBF_TM, IBR_TM, IHC_M;
|
||||
real IS_TM, IK_TM, IBF_TM, IBR_TM, IHC_M;
|
||||
// RvdT: November 2008, Zener tunneling parameters
|
||||
real IZEB_TM ;
|
||||
|
||||
// end Zener tunneling parameters
|
||||
|
||||
|
||||
|
||||
|
||||
real CJE_TM, CJC_TM;
|
||||
|
||||
real RE_TM, RBC_TM, RBV_TM, RCV_TM, SCRCV_M;
|
||||
|
|
@ -55,7 +74,7 @@ real RTH_Tamb_M, CTH_M;
|
|||
`endif
|
||||
|
||||
`ifdef SUBSTRATE
|
||||
real ISS_TM, IKS_TM, CJS_TM;
|
||||
real ISS_TM, ICSS_TM, IKS_TM, CJS_TM;
|
||||
`endif
|
||||
|
||||
|
||||
|
|
@ -81,12 +100,12 @@ real q0I, q1I, qBI, Ir, If, In;
|
|||
|
||||
real Xext1;
|
||||
real Ib1, Ib1_s, Ib2, Ib3;
|
||||
real Ibf0, Iex, Isub;
|
||||
real Ibf0, Iex;
|
||||
real g1, g2, pWex, nBex;
|
||||
real Xg1, XnBex, XIMex, XIMsub, Vex, VBex, Fex, XIex;
|
||||
|
||||
`ifdef SUBSTRATE
|
||||
real XIsub, Isf;
|
||||
real Isub, XIsub, Isf;
|
||||
`endif
|
||||
|
||||
// Distributed base effects variables
|
||||
|
|
@ -103,7 +122,7 @@ real lambda, Gem, Gmax, Iavl;
|
|||
real Icap_IHC;
|
||||
|
||||
`ifdef SELFHEATING
|
||||
real power;
|
||||
real Tki, power;
|
||||
`endif
|
||||
|
||||
// Charges and capacitances variables
|
||||
|
|
@ -130,13 +149,20 @@ real Vb2c1, Vb2c2, Vb2e1, Vb1e1, Vb1b2, Vb1c4, Vc1c2;
|
|||
real Vc3c4, Vc4c1;
|
||||
// RvdT, 25-02-2008: new variables Vsc3, Vsc4
|
||||
`ifdef SUBSTRATE
|
||||
real Vsc1, Vsc3, Vsc4;
|
||||
real Vsc1, Vsc3, Vsc4, eVsc1;
|
||||
`endif
|
||||
real Vee1, Vbb1, Vbc3, Vcc3, Vbe, Vbc;
|
||||
real eVb2c2, eVb2e1, eVb1e1, eVb1b2, eVb1c4, eVbc3, eVsc1;
|
||||
real eVb2c2, eVb2e1, eVb1e1, eVb1b2, eVb1c4, eVbc3;
|
||||
real eVb1c4VDC, eVb2c2VDC, eVbc3VDC, eVb2c1VDC;
|
||||
|
||||
// Help variables
|
||||
|
||||
// RvdT, November 2008, lntN introduced to speed up T-scaling:
|
||||
// Acknowledgements due to Geoffrey Coram
|
||||
real lntN ;
|
||||
|
||||
// RvdT, November 2008 variables for local use; may be re-used globally:
|
||||
real x, y ;
|
||||
|
||||
real dxa, sqr_arg;
|
||||
real eps2, x2;
|
||||
|
|
|
|||
Loading…
Reference in New Issue