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restructering thermal update by unified function 

introduce diode series resistor thermal contribution

separate naming of mos and diode model parameter
This commit is contained in:
dwarning 2020-06-23 17:27:26 +02:00 committed by Holger Vogt
parent f07a17878a
commit 280bea9d50
7 changed files with 376 additions and 351 deletions
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30
src/spicelib/devices/vdmos/vdmos.c
View File

@ -94,8 +94,8 @@ IFparm VDMOSmPTable[] = { /* model parameters */
IOP( "trg2", VDMOS_MOD_TRG2, IF_REAL, "Gate resistance quadratic temperature coefficient"),
IOP( "trs1", VDMOS_MOD_TRS1, IF_REAL, "Source resistance linear temperature coefficient"),
IOP( "trs2", VDMOS_MOD_TRS2, IF_REAL, "Source resistance quadratic temperature coefficient"),
IOP( "trb1", VDMOS_MOD_TRB1, IF_REAL, "Body resistance linear temperature coefficient"),
IOP( "trb2", VDMOS_MOD_TRB2, IF_REAL, "Body resistance quadratic temperature coefficient"),
IOP( "trb1", VDIO_MOD_TRB1, IF_REAL, "Body resistance linear temperature coefficient"),
IOP( "trb2", VDIO_MOD_TRB2, IF_REAL, "Body resistance quadratic temperature coefficient"),
/* weak inversion */
IOP("subshift", VDMOS_MOD_SUBSHIFT, IF_REAL, "Shift of weak inversion plot on the vgs axis"),
@ -104,22 +104,22 @@ IFparm VDMOSmPTable[] = { /* model parameters */
IOP("tksubthres2", VDMOS_MOD_TKSUBTHRES2, IF_REAL, "Quadratic temperature coefficient of ksubthres"),
/* body diode */
IOP("bv", VDMOS_MOD_BV, IF_REAL, "Vds breakdown voltage"),
IOP("ibv", VDMOS_MOD_IBV, IF_REAL, "Current at Vds=bv"),
IOP("nbv", VDMOS_MOD_NBV, IF_REAL, "Vds breakdown emission coefficient"),
IOP("bv", VDIO_MOD_BV, IF_REAL, "Vds breakdown voltage"),
IOP("ibv", VDIO_MOD_IBV, IF_REAL, "Current at Vds=bv"),
IOP("nbv", VDIO_MOD_NBV, IF_REAL, "Vds breakdown emission coefficient"),
IOP("rds", VDMOS_MOD_RDS, IF_REAL, "Drain-source shunt resistance"),
IOP("rb", VDMOS_MOD_RB, IF_REAL, "Body diode ohmic resistance"),
IOP("n", VDMOS_MOD_N, IF_REAL, "Body diode emission coefficient"),
IOP("tt", VDMOS_MOD_TT, IF_REAL, "Body diode transit time"),
IOP("eg", VDMOS_MOD_EG, IF_REAL, "Body diode activation energy for temperature effect on Is"),
IOP("xti", VDMOS_MOD_XTI, IF_REAL, "Body diode saturation current temperature exponent"),
IOP("is", VDMOS_MOD_IS, IF_REAL, "Body diode saturation current"),
IOP("vj", VDMOS_MOD_VJ, IF_REAL, "Body diode junction potential"),
IOP("rb", VDIO_MOD_RB, IF_REAL, "Body diode ohmic resistance"),
IOP("n", VDIO_MOD_N, IF_REAL, "Body diode emission coefficient"),
IOP("tt", VDIO_MOD_TT, IF_REAL, "Body diode transit time"),
IOP("eg", VDIO_MOD_EG, IF_REAL, "Body diode activation energy for temperature effect on Is"),
IOP("xti", VDIO_MOD_XTI, IF_REAL, "Body diode saturation current temperature exponent"),
IOP("is", VDIO_MOD_IS, IF_REAL, "Body diode saturation current"),
IOP("vj", VDIO_MOD_VJ, IF_REAL, "Body diode junction potential"),
/* body diode capacitance (e.g. source-drain capacitance) */
IOP("fc", VDMOS_MOD_FC, IF_REAL, "Body diode coefficient for forward-bias depletion capacitance formula"),
IOPA("cjo", VDMOS_MOD_CJ, IF_REAL, "Zero-bias body diode junction capacitance"),
IOP("m", VDMOS_MOD_MJ, IF_REAL, "Body diode grading coefficient"),
IOP("fc", VDIO_MOD_FC, IF_REAL, "Body diode coefficient for forward-bias depletion capacitance formula"),
IOPA("cjo", VDIO_MOD_CJ, IF_REAL, "Zero-bias body diode junction capacitance"),
IOP("m", VDIO_MOD_MJ, IF_REAL, "Body diode grading coefficient"),
/* gate-source and gate-drain capacitances */
IOPA("cgdmin", VDMOS_MOD_CGDMIN, IF_REAL, "Minimum non-linear G-D capacitance"),

75
src/spicelib/devices/vdmos/vdmosdefs.h
View File

@ -78,11 +78,13 @@ typedef struct sVDMOSinstance {
double VDMOSgds;
double VDIOcap;
double VDIOtSatCur; /* temperature corrected saturation Cur. density*/
double VDIOtSatCur; /* temperature corrected saturation Cur. density */
double VDIOtSatCur_dT;
double VDIOinitCond;
double VDIOtVcrit;
double VDIOconductance;
double VDIOtConductance;
double VDIOtConductance_dT;
double VDIOtBrkdwnV;
double VDIOtJctCap;
double VDIOtDepCap; /* temperature adjusted transition point in */
@ -105,7 +107,6 @@ typedef struct sVDMOSinstance {
double VDMOScdT;
double VDMOScth; /* current alias power */
// double VDIOdIth_dVdio;
/*
* naming convention:
* x = vgs
@ -233,6 +234,8 @@ typedef struct sVDMOSinstance {
double *VDMOSTempdPtr;
double *VDIOPosPrimetempPtr;
double *VDMOSDtempPtr;
double *VDMOStempSPtr;
double *VDMOSSTempPtr;
double *VDMOSTcasetcasePtr; /* for Rthjc */
double *VDMOSTcasetempPtr;
@ -315,26 +318,28 @@ typedef struct sVDMOSmodel { /* model structure for a resistor */
double VDMOSsubshift;
double VDMOSksubthres;
double VDMOSmtr;
double VDMOSrds;
/* body diode */
double VDIOjunctionCap; /* input - use tCj */
double VDIOjunctionPot; /* input - use tJctPot */
double VDIOdepletionCapCoeff;
double VDIOjctSatCur; /* input - use tSatCur */
double VDMOSbv;
double VDMOSibv;
double VDIObv;
double VDIOibv;
double VDIObrkdEmissionCoeff;
double VDIOresistance;
double VDMOSrds;
double VDMOSn;
double VDIOn;
double VDIOtransitTime;
double VDIOtranTimeTemp1;
double VDIOtranTimeTemp2;
double VDMOSeg;
double VDMOSxti;
double VDIOeg;
double VDIOxti;
double VDIOgradCoeff;
double VDIOgradCoeffTemp1;
double VDIOgradCoeffTemp2;
double VDIOtrb1;
double VDIOtrb2;
double VDMOStcvth;
double VDMOSrthjc;
@ -349,8 +354,6 @@ typedef struct sVDMOSmodel { /* model structure for a resistor */
double VDMOStrg2;
double VDMOStrs1;
double VDMOStrs2;
double VDMOStrb1;
double VDMOStrb2;
double VDMOStksubthres1;
double VDMOStksubthres2;
@ -361,7 +364,6 @@ typedef struct sVDMOSmodel { /* model structure for a resistor */
double VDMOSvgdrMax;
unsigned VDMOStypeGiven :1;
unsigned VDIOjctSatCurGiven :1;
unsigned VDMOSdrainResistanceGiven :1;
unsigned VDMOSsourceResistanceGiven :1;
unsigned VDMOSgateResistanceGiven :1;
@ -370,8 +372,6 @@ typedef struct sVDMOSmodel { /* model structure for a resistor */
unsigned VDMOSqsGiven :1;
unsigned VDMOStransconductanceGiven :1;
unsigned VDMOSvth0Given :1;
unsigned VDIOgradCoeffGiven :1;
unsigned VDIOdepletionCapCoeffGiven :1;
unsigned VDMOSphiGiven :1;
unsigned VDMOSlambdaGiven :1;
unsigned VDMOSthetaGiven :1;
@ -386,18 +386,23 @@ typedef struct sVDMOSmodel { /* model structure for a resistor */
unsigned VDMOSsubshiftGiven :1;
unsigned VDMOSksubthresGiven :1;
unsigned VDMOSmtrGiven :1;
unsigned VDMOSrdsGiven :1;
unsigned VDMOSbvGiven :1;
unsigned VDMOSibvGiven :1;
unsigned VDIOjctSatCurGiven :1;
unsigned VDIOgradCoeffGiven :1;
unsigned VDIOdepletionCapCoeffGiven :1;
unsigned VDIObvGiven :1;
unsigned VDIOibvGiven :1;
unsigned VDIOjunctionCapGiven :1;
unsigned VDIOjunctionPotGiven :1;
unsigned VDIObrkdEmissionCoeffGiven :1;
unsigned VDIOresistanceGiven :1;
unsigned VDMOSrdsGiven :1;
unsigned VDMOSnGiven :1;
unsigned VDIOnGiven :1;
unsigned VDIOtransitTimeGiven :1;
unsigned VDMOSegGiven :1;
unsigned VDMOSxtiGiven :1;
unsigned VDIOegGiven :1;
unsigned VDIOxtiGiven :1;
unsigned VDIOtrb1Given :1;
unsigned VDIOtrb2Given :1;
unsigned VDMOStcvthGiven :1;
unsigned VDMOSrthjcGiven :1;
@ -412,8 +417,6 @@ typedef struct sVDMOSmodel { /* model structure for a resistor */
unsigned VDMOStrg2Given :1;
unsigned VDMOStrs1Given :1;
unsigned VDMOStrs2Given :1;
unsigned VDMOStrb1Given :1;
unsigned VDMOStrb2Given :1;
unsigned VDMOStksubthres1Given :1;
unsigned VDMOStksubthres2Given :1;
@ -456,11 +459,6 @@ enum {
VDMOS_MOD_RG,
VDMOS_MOD_RQ,
VDMOS_MOD_VQ,
VDMOS_MOD_IS,
VDMOS_MOD_VJ,
VDMOS_MOD_CJ,
VDMOS_MOD_MJ,
VDMOS_MOD_FC,
VDMOS_MOD_NMOS,
VDMOS_MOD_PMOS,
VDMOS_MOD_TNOM,
@ -472,18 +470,25 @@ enum {
VDMOS_MOD_CGDMAX,
VDMOS_MOD_A,
VDMOS_MOD_CGS,
VDMOS_MOD_RB,
VDMOS_MOD_MTRIODE,
VDMOS_MOD_SUBSHIFT,
VDMOS_MOD_KSUBTHRES,
VDMOS_MOD_BV,
VDMOS_MOD_IBV,
VDMOS_MOD_NBV,
VDMOS_MOD_RDS,
VDMOS_MOD_N,
VDMOS_MOD_TT,
VDMOS_MOD_EG,
VDMOS_MOD_XTI,
VDIO_MOD_IS,
VDIO_MOD_VJ,
VDIO_MOD_CJ,
VDIO_MOD_MJ,
VDIO_MOD_FC,
VDIO_MOD_RB,
VDIO_MOD_BV,
VDIO_MOD_IBV,
VDIO_MOD_NBV,
VDIO_MOD_N,
VDIO_MOD_TT,
VDIO_MOD_EG,
VDIO_MOD_XTI,
VDIO_MOD_TRB1,
VDIO_MOD_TRB2,
VDMOS_MOD_TCVTH,
VDMOS_MOD_RTHJC,
VDMOS_MOD_RTHCA,
@ -497,8 +502,6 @@ enum {
VDMOS_MOD_TRG2,
VDMOS_MOD_TRS1,
VDMOS_MOD_TRS2,
VDMOS_MOD_TRB1,
VDMOS_MOD_TRB2,
VDMOS_MOD_TKSUBTHRES1,
VDMOS_MOD_TKSUBTHRES2,
VDMOS_MOD_VGS_MAX,

75
src/spicelib/devices/vdmos/vdmosload.c
View File

@ -14,6 +14,8 @@ VDMOS: 2018 Holger Vogt, 2020 Dietmar Warning
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
void VDMOStempUpdate(VDMOSmodel *inModel, VDMOSinstance *here, double Temp, CKTcircuit *ckt);
int
VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
/* actually load the current value into the
@ -279,7 +281,12 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
}
Temp = here->VDMOStemp + delTemp;
if (selfheat) {
Temp = here->VDMOStemp + delTemp;
VDMOStempUpdate(model, here, Temp, ckt);
} else {
Temp = here->VDMOStemp;
}
here->VDMOSTempSH = Temp; /* added for portability of SH Temp for noise analysis */
/* Calculate temperature dependent values for self-heating effect */
@ -665,14 +672,15 @@ bypass:
double vd, cd;
double vte;
double vtebrk, vbrknp;
double cdb, csat, cdeq;
double cdb, cdeq;
double capd;
double gd, gdb, gspr;
double delvd; /* change in diode voltage temporary */
double evrev;
double Ith=0.0, dIth_dT=0.0;
double dIdio_dT=0.0, dIth_dVdio=0.0;
double arg1, darg1_dT, arg2, darg2_dT, csat_dT;
double vrs=0.0, dIrs_dT=0.0, dIth_dVrs=0.0;
#ifndef NOBYPASS
double tol; /* temporary for tolerance calculations */
#endif
@ -684,7 +692,7 @@ bypass:
gspr = here->VDIOtConductance;
vt = CONSTKoverQ * Temp;
vte = model->VDMOSn * vt;
vte = model->VDIOn * vt;
vtebrk = model->VDIObrkdEmissionCoeff * vt;
vbrknp = here->VDIOtBrkdwnV;
@ -751,7 +759,7 @@ bypass:
/*
* limit new junction voltage
*/
if ((model->VDMOSbvGiven) &&
if ((model->VDIObvGiven) &&
(vd < MIN(0, -vbrknp + 10 * vtebrk))) {
double vdtemp;
vdtemp = -(vd + vbrknp);
@ -766,19 +774,6 @@ bypass:
}
}
/*
* temperature dependent diode saturation current and derivative
*/
arg1 = ((Temp / model->VDMOStnom) - 1) * model->VDMOSeg / (model->VDMOSn*vt);
darg1_dT = model->VDMOSeg / (vte*model->VDMOStnom)
- model->VDMOSeg*(Temp/model->VDMOStnom -1)/(vte*Temp);
arg2 = model->VDMOSxti / model->VDMOSn * log(Temp / model->VDMOStnom);
darg2_dT = model->VDMOSxti / model->VDMOSn / Temp;
csat = here->VDMOSm * model->VDIOjctSatCur * exp(arg1 + arg2);
csat_dT = here->VDMOSm * model->VDIOjctSatCur * exp(arg1 + arg2) * (darg1_dT + darg2_dT);
/*
* compute dc current and derivatives
*/
@ -786,27 +781,27 @@ bypass:
double evd;
evd = exp(vd / vte);
cdb = csat*(evd - 1);
dIdio_dT = csat_dT * (evd - 1) - csat * vd * evd / (vte * Temp);
gdb = csat*evd / vte;
cdb = here->VDIOtSatCur*(evd - 1);
dIdio_dT = here->VDIOtSatCur_dT * (evd - 1) - here->VDIOtSatCur * vd * evd / (vte * Temp);
gdb = here->VDIOtSatCur*evd / vte;
} else if ((!(model->VDMOSbvGiven)) ||
} else if ((!(model->VDIObvGiven)) ||
vd >= -vbrknp) { /* reverse */
double arg3, darg3_dT;
arg = 3 * vte / (vd*CONSTe);
arg3 = arg * arg * arg;
darg3_dT = 3 * arg3 / Temp;
cdb = -csat*(1 + arg3);
dIdio_dT = -csat_dT * (arg3 + 1) - csat * darg3_dT;
gdb = csat * 3 * arg / vd;
cdb = -here->VDIOtSatCur*(1 + arg3);
dIdio_dT = -here->VDIOtSatCur_dT * (arg3 + 1) - here->VDIOtSatCur * darg3_dT;
gdb = here->VDIOtSatCur * 3 * arg / vd;
} else { /* breakdown */
evrev = exp(-(vbrknp + vd) / vtebrk);
cdb = -csat*evrev;
dIdio_dT = csat * (-vbrknp-vd) * evrev / vtebrk / Temp - csat_dT * evrev;
gdb = csat*evrev / vtebrk;
cdb = -here->VDIOtSatCur*evrev;
dIdio_dT = here->VDIOtSatCur * (-vbrknp-vd) * evrev / vtebrk / Temp - here->VDIOtSatCur_dT * evrev;
gdb = here->VDIOtSatCur*evrev / vtebrk;
}
@ -888,9 +883,18 @@ bypass:
load:
#endif
if (selfheat) {
Ith = vd*cd;
double dIrs_dgspr, dIth_dIrs;
vrs = *(ckt->CKTrhsOld + here->VDMOSsNode) - *(ckt->CKTrhsOld + here->VDIOposPrimeNode);
Ith = vd*cd + vrs*vrs*gspr;
dIth_dVdio = cd + vd*gd;
dIth_dT = dIdio_dT*vd;
dIth_dVrs = vrs*gspr;
dIrs_dgspr = vrs;
dIrs_dT = dIrs_dgspr * here->VDIOtConductance_dT;
dIth_dIrs = vrs;
dIth_dT = dIth_dIrs*dIrs_dT + dIdio_dT*vd;
}
/*
* load current vector
@ -904,9 +908,10 @@ load:
*(ckt->CKTrhs + here->VDIOposPrimeNode) += cdeq;
}
if (selfheat) {
*(ckt->CKTrhs + here->VDIOposPrimeNode) += dIdio_dT*delTemp;
*(ckt->CKTrhs + here->VDIOposPrimeNode) += dIdio_dT*delTemp - dIrs_dT*delTemp;
*(ckt->CKTrhs + here->VDMOSdNode) += -dIdio_dT*delTemp;
*(ckt->CKTrhs + here->VDMOStempNode) += Ith - model->VDMOStype*dIth_dVdio*vd - dIth_dT*delTemp;
*(ckt->CKTrhs + here->VDMOSsNode) += dIrs_dT*delTemp;
*(ckt->CKTrhs + here->VDMOStempNode) += Ith - model->VDMOStype*dIth_dVdio*vd - dIth_dVrs*vrs - dIth_dT*delTemp;
}
/*
* load matrix
@ -919,10 +924,12 @@ load:
*(here->VDIORPsPtr) -= gspr;
*(here->VDIORPdPtr) -= gd;
if (selfheat) {
(*(here->VDIOTempposPrimePtr) += -dIth_dVdio);
(*(here->VDMOStempSPtr) += -dIth_dVrs);
(*(here->VDIOTempposPrimePtr) += -dIth_dVdio + dIth_dVrs);
(*(here->VDMOSTempdPtr) += dIth_dVdio);
(*(here->VDMOSTemptempPtr) += -dIth_dT);
(*(here->VDIOPosPrimetempPtr) += dIdio_dT);
(*(here->VDIOPosPrimetempPtr) += dIdio_dT - dIrs_dT);
(*(here->VDMOSSTempPtr) += dIrs_dT);
(*(here->VDMOSDtempPtr) += -dIdio_dT);
}
}

44
src/spicelib/devices/vdmos/vdmosmask.c
View File

@ -83,47 +83,47 @@ VDMOSmAsk(CKTcircuit *ckt, GENmodel *inst, int which, IFvalue *value)
return(OK);
/* body diode */
case VDMOS_MOD_RB:
case VDIO_MOD_RB:
value->rValue = model->VDIOresistance;
return(OK);
case VDMOS_MOD_IS:
case VDIO_MOD_IS:
value->rValue = model->VDIOjctSatCur;
return(OK);
case VDMOS_MOD_N:
value->rValue = model->VDMOSn;
case VDIO_MOD_N:
value->rValue = model->VDIOn;
return(OK);
case VDMOS_MOD_VJ:
case VDIO_MOD_VJ:
value->rValue = model->VDIOjunctionPot;
return(OK);
case VDMOS_MOD_CJ:
case VDIO_MOD_CJ:
value->rValue = model->VDIOjunctionCap;
return(OK);
case VDMOS_MOD_MJ:
case VDIO_MOD_MJ:
value->rValue = model->VDIOgradCoeff;
return(OK);
case VDMOS_MOD_BV:
value->rValue = model->VDMOSbv;
case VDIO_MOD_BV:
value->rValue = model->VDIObv;
return(OK);
case VDMOS_MOD_IBV:
value->rValue = model->VDMOSibv;
case VDIO_MOD_IBV:
value->rValue = model->VDIOibv;
return(OK);
case VDMOS_MOD_NBV:
case VDIO_MOD_NBV:
value->rValue = model->VDIObrkdEmissionCoeff;
return(OK);
case VDMOS_MOD_RDS:
value->rValue = model->VDMOSrds;
return(OK);
case VDMOS_MOD_FC:
case VDIO_MOD_FC:
value->rValue = model->VDIOdepletionCapCoeff;
return(OK);
case VDMOS_MOD_TT:
case VDIO_MOD_TT:
value->rValue = model->VDIOtransitTime;
return(OK);
case VDMOS_MOD_EG:
value->rValue = model->VDMOSeg;
case VDIO_MOD_EG:
value->rValue = model->VDIOeg;
return(OK);
case VDMOS_MOD_XTI:
value->rValue = model->VDMOSxti;
case VDIO_MOD_XTI:
value->rValue = model->VDIOxti;
return(OK);
case VDMOS_MOD_TCVTH:
value->rValue = model->VDMOStcvth;
@ -164,11 +164,11 @@ VDMOSmAsk(CKTcircuit *ckt, GENmodel *inst, int which, IFvalue *value)
case VDMOS_MOD_TRS2:
value->rValue = model->VDMOStrs2;
return(OK);
case VDMOS_MOD_TRB1:
value->rValue = model->VDMOStrb1;
case VDIO_MOD_TRB1:
value->rValue = model->VDIOtrb1;
return(OK);
case VDMOS_MOD_TRB2:
value->rValue = model->VDMOStrb2;
case VDIO_MOD_TRB2:
value->rValue = model->VDIOtrb2;
return(OK);
case VDMOS_MOD_TKSUBTHRES1:
value->rValue = model->VDMOStksubthres1;

58
src/spicelib/devices/vdmos/vdmosmpar.c
View File

@ -60,29 +60,29 @@ VDMOSmParam(int param, IFvalue *value, GENmodel *inModel)
model->VDMOSqsVoltage = value->rValue;
model->VDMOSqsVoltageGiven = TRUE;
break;
case VDMOS_MOD_RB:
case VDIO_MOD_RB:
model->VDIOresistance = value->rValue;
model->VDIOresistanceGiven = TRUE;
break;
case VDMOS_MOD_IS:
case VDIO_MOD_IS:
model->VDIOjctSatCur = value->rValue;
model->VDIOjctSatCurGiven = TRUE;
break;
case VDMOS_MOD_VJ:
case VDIO_MOD_VJ:
model->VDIOjunctionPot = value->rValue;
model->VDIOjunctionPotGiven = TRUE;
break;
case VDMOS_MOD_CJ:
case VDIO_MOD_CJ:
model->VDIOjunctionCap = value->rValue;
model->VDIOjunctionCapGiven = TRUE;
break;
case VDMOS_MOD_MJ:
case VDIO_MOD_MJ:
model->VDIOgradCoeff = value->rValue;
model->VDIOgradCoeffGiven = TRUE;
model->VDIOgradCoeffTemp1 = 0;
model->VDIOgradCoeffTemp2 = 0;
break;
case VDMOS_MOD_FC:
case VDIO_MOD_FC:
model->VDIOdepletionCapCoeff = value->rValue;
model->VDIOdepletionCapCoeffGiven = TRUE;
break;
@ -140,15 +140,15 @@ VDMOSmParam(int param, IFvalue *value, GENmodel *inModel)
model->VDMOSksubthres = value->rValue;
model->VDMOSksubthresGiven = TRUE;
break;
case VDMOS_MOD_BV:
model->VDMOSbv = value->rValue;
model->VDMOSbvGiven = TRUE;
case VDIO_MOD_BV:
model->VDIObv = value->rValue;
model->VDIObvGiven = TRUE;
break;
case VDMOS_MOD_IBV:
model->VDMOSibv = value->rValue;
model->VDMOSibvGiven = TRUE;
case VDIO_MOD_IBV:
model->VDIOibv = value->rValue;
model->VDIOibvGiven = TRUE;
break;
case VDMOS_MOD_NBV:
case VDIO_MOD_NBV:
model->VDIObrkdEmissionCoeff = value->rValue;
model->VDIObrkdEmissionCoeffGiven = TRUE;
break;
@ -156,23 +156,23 @@ VDMOSmParam(int param, IFvalue *value, GENmodel *inModel)
model->VDMOSrds = value->rValue;
model->VDMOSrdsGiven = TRUE;
break;
case VDMOS_MOD_N:
model->VDMOSn = value->rValue;
model->VDMOSnGiven = TRUE;
case VDIO_MOD_N:
model->VDIOn = value->rValue;
model->VDIOnGiven = TRUE;
break;
case VDMOS_MOD_TT:
case VDIO_MOD_TT:
model->VDIOtransitTime = value->rValue;
model->VDIOtransitTimeGiven = TRUE;
model->VDIOtranTimeTemp1 = 0;
model->VDIOtranTimeTemp2 = 0;
break;
case VDMOS_MOD_EG:
model->VDMOSeg = value->rValue;
model->VDMOSegGiven = TRUE;
case VDIO_MOD_EG:
model->VDIOeg = value->rValue;
model->VDIOegGiven = TRUE;
break;
case VDMOS_MOD_XTI:
model->VDMOSxti = value->rValue;
model->VDMOSxtiGiven = TRUE;
case VDIO_MOD_XTI:
model->VDIOxti = value->rValue;
model->VDIOxtiGiven = TRUE;
break;
case VDMOS_MOD_TCVTH:
model->VDMOStcvth = value->rValue;
@ -226,13 +226,13 @@ VDMOSmParam(int param, IFvalue *value, GENmodel *inModel)
model->VDMOStrs2 = value->rValue;
model->VDMOStrs2Given = TRUE;
break;
case VDMOS_MOD_TRB1:
model->VDMOStrb1 = value->rValue;
model->VDMOStrb1Given = TRUE;
case VDIO_MOD_TRB1:
model->VDIOtrb1 = value->rValue;
model->VDIOtrb1Given = TRUE;
break;
case VDMOS_MOD_TRB2:
model->VDMOStrb2 = value->rValue;
model->VDMOStrb2Given = TRUE;
case VDIO_MOD_TRB2:
model->VDIOtrb2 = value->rValue;
model->VDIOtrb2Given = TRUE;
break;
case VDMOS_MOD_TKSUBTHRES1:
model->VDMOStksubthres1 = value->rValue;

109
src/spicelib/devices/vdmos/vdmosset.c
View File

@ -85,11 +85,11 @@ VDMOSsetup(SMPmatrix *matrix, GENmodel *inModel, CKTcircuit *ckt,
if (!model->VDMOSmtrGiven)
model->VDMOSmtr = 1.;
if (!model->VDMOSbvGiven)
model->VDMOSbv = 1.0e30;
if (!model->VDIObvGiven)
model->VDIObv = 1.0e30;
if (!model->VDMOSibvGiven)
model->VDMOSibv = 1.0e-10;
if (!model->VDIOibvGiven)
model->VDIOibv = 1.0e-10;
if (!model->VDIObrkdEmissionCoeffGiven)
model->VDIObrkdEmissionCoeff = 1.;
@ -109,14 +109,14 @@ VDMOSsetup(SMPmatrix *matrix, GENmodel *inModel, CKTcircuit *ckt,
if (!model->VDIOresistanceGiven)
model->VDIOresistance = 10e-03;
if (!model->VDMOSnGiven)
model->VDMOSn = 1.;
if (!model->VDIOnGiven)
model->VDIOn = 1.;
if (!model->VDIOtransitTimeGiven)
model->VDIOtransitTime = 0.;
if (!model->VDMOSegGiven)
model->VDMOSeg = 1.11;
if (!model->VDIOegGiven)
model->VDIOeg = 1.11;
if (!model->VDMOSrthjcGiven)
model->VDMOSrthjc = 1.0e-03;
@ -157,11 +157,11 @@ VDMOSsetup(SMPmatrix *matrix, GENmodel *inModel, CKTcircuit *ckt,
if (!model->VDMOStrs2Given)
model->VDMOStrs2 = 0.0;
if (!model->VDMOStrb1Given)
model->VDMOStrb1 = 0.0;
if (!model->VDIOtrb1Given)
model->VDIOtrb1 = 0.0;
if (!model->VDMOStrb2Given)
model->VDMOStrb2 = 0.0;
if (!model->VDIOtrb2Given)
model->VDIOtrb2 = 0.0;
if (!model->VDMOStksubthres1Given)
model->VDMOStksubthres1 = 0.0;
@ -189,6 +189,38 @@ VDMOSsetup(SMPmatrix *matrix, GENmodel *inModel, CKTcircuit *ckt,
else
model->VDMOSqsGiven = 0;
if(!model->VDMOStnomGiven) {
model->VDMOStnom = ckt->CKTnomTemp;
}
/* now model parameter preprocessing */
if (model->VDMOSphi <= 0.0) {
SPfrontEnd->IFerrorf(ERR_FATAL,
"%s: Phi is not positive.", model->VDMOSmodName);
return(E_BADPARM);
}
model->VDMOSoxideCapFactor = 3.9 * 8.854214871e-12 / 1e-07; /* use default Tox of 100nm */
/* body diode model */
/* limit activation energy to min of .1 */
if (model->VDIOeg<.1) {
SPfrontEnd->IFerrorf(ERR_WARNING,
"%s: body diode activation energy too small, limited to 0.1",
model->VDMOSmodName);
model->VDIOeg = .1;
}
/* limit depletion cap coeff to max of .95 */
if (model->VDIOdepletionCapCoeff>.95) {
SPfrontEnd->IFerrorf(ERR_WARNING,
"%s: coefficient Fc too large, limited to 0.95",
model->VDMOSmodName);
model->VDIOdepletionCapCoeff = .95;
}
/* set lower limit of saturation current */
if (model->VDIOjctSatCur < ckt->CKTepsmin)
model->VDIOjctSatCur = ckt->CKTepsmin;
/* loop through all the instances of the model */
for (here = VDMOSinstances(model); here != NULL;
here = VDMOSnextInstance(here)) {
@ -368,30 +400,6 @@ do { if((here->ptr = SMPmakeElt(matrix, here->first, here->second)) == NULL){\
return(E_NOMEM);\
} } while(0)
if ((here->VDMOSthermalGiven) && (model->VDMOSrthjcGiven)) {
TSTALLOC(VDMOSTemptempPtr, VDMOStempNode, VDMOStempNode); /* Transistor thermal contribution */
TSTALLOC(VDMOSTempdpPtr, VDMOStempNode, VDMOSdNodePrime);
TSTALLOC(VDMOSTempspPtr, VDMOStempNode, VDMOSsNodePrime);
TSTALLOC(VDMOSTempgpPtr, VDMOStempNode, VDMOSgNodePrime);
TSTALLOC(VDMOSGPtempPtr, VDMOSgNodePrime, VDMOStempNode);
TSTALLOC(VDMOSDPtempPtr, VDMOSdNodePrime, VDMOStempNode);
TSTALLOC(VDMOSSPtempPtr, VDMOSsNodePrime, VDMOStempNode);
TSTALLOC(VDIOTempposPrimePtr, VDMOStempNode, VDIOposPrimeNode);/* Diode thermal contribution */
TSTALLOC(VDMOSTempdPtr, VDMOStempNode, VDMOSdNode);
TSTALLOC(VDIOPosPrimetempPtr, VDIOposPrimeNode, VDMOStempNode);
TSTALLOC(VDMOSDtempPtr, VDMOSdNode, VDMOStempNode);
TSTALLOC(VDMOSTcasetcasePtr, VDMOStcaseNode, VDMOStcaseNode); /* Rthjc between tj and tcase*/
TSTALLOC(VDMOSTcasetempPtr, VDMOStcaseNode, VDMOStempNode);
TSTALLOC(VDMOSTemptcasePtr, VDMOStempNode, VDMOStcaseNode);
TSTALLOC(VDMOSTptpPtr, VDMOStNodePrime, VDMOStNodePrime); /* Rthca between tcase and Vsrc */
TSTALLOC(VDMOSTptcasePtr, VDMOStNodePrime, VDMOStempNode);
TSTALLOC(VDMOSTcasetpPtr, VDMOStempNode, VDMOStNodePrime);
TSTALLOC(VDMOSCktTcktTPtr, VDMOSvcktTbranch, VDMOSvcktTbranch); /* Vsrc=cktTemp to gnd */
TSTALLOC(VDMOSCktTtpPtr, VDMOSvcktTbranch, VDMOStNodePrime);
TSTALLOC(VDMOSTpcktTPtr, VDMOStNodePrime, VDMOSvcktTbranch);
}
TSTALLOC(VDMOSDdPtr, VDMOSdNode, VDMOSdNode);
TSTALLOC(VDMOSGgPtr, VDMOSgNode, VDMOSgNode);
TSTALLOC(VDMOSSsPtr, VDMOSsNode, VDMOSsNode);
@ -409,7 +417,7 @@ do { if((here->ptr = SMPmakeElt(matrix, here->first, here->second)) == NULL){\
TSTALLOC(VDMOSSPsPtr, VDMOSsNodePrime, VDMOSsNode);
TSTALLOC(VDMOSSPdpPtr, VDMOSsNodePrime, VDMOSdNodePrime);
TSTALLOC(VDMOSGgpPtr, VDMOSgNode, VDMOSgNodePrime);
TSTALLOC(VDMOSGgpPtr, VDMOSgNode, VDMOSgNodePrime);
TSTALLOC(VDMOSGPgPtr, VDMOSgNodePrime, VDMOSgNode);
TSTALLOC(VDMOSDsPtr, VDMOSdNode, VDMOSsNode);
@ -420,6 +428,33 @@ do { if((here->ptr = SMPmakeElt(matrix, here->first, here->second)) == NULL){\
TSTALLOC(VDIOSrpPtr, VDMOSsNode, VDIOposPrimeNode);
TSTALLOC(VDIORPsPtr, VDIOposPrimeNode, VDMOSsNode);
TSTALLOC(VDIORPrpPtr, VDIOposPrimeNode, VDIOposPrimeNode);
if ((here->VDMOSthermalGiven) && (model->VDMOSrthjcGiven)) {
TSTALLOC(VDMOSTemptempPtr, VDMOStempNode, VDMOStempNode); /* Transistor thermal contribution */
TSTALLOC(VDMOSTempdpPtr, VDMOStempNode, VDMOSdNodePrime);
TSTALLOC(VDMOSTempspPtr, VDMOStempNode, VDMOSsNodePrime);
TSTALLOC(VDMOSTempgpPtr, VDMOStempNode, VDMOSgNodePrime);
TSTALLOC(VDMOSGPtempPtr, VDMOSgNodePrime, VDMOStempNode);
TSTALLOC(VDMOSDPtempPtr, VDMOSdNodePrime, VDMOStempNode);
TSTALLOC(VDMOSSPtempPtr, VDMOSsNodePrime, VDMOStempNode);
TSTALLOC(VDIOTempposPrimePtr, VDMOStempNode, VDIOposPrimeNode);/* Diode thermal contribution */
TSTALLOC(VDMOSTempdPtr, VDMOStempNode, VDMOSdNode);
TSTALLOC(VDIOPosPrimetempPtr, VDIOposPrimeNode, VDMOStempNode);
TSTALLOC(VDMOSDtempPtr, VDMOSdNode, VDMOStempNode);
TSTALLOC(VDMOStempSPtr, VDMOStempNode, VDMOSsNode);
TSTALLOC(VDMOSSTempPtr, VDMOSsNode, VDMOStempNode);
TSTALLOC(VDMOSTcasetcasePtr, VDMOStcaseNode, VDMOStcaseNode); /* Rthjc between tj and tcase*/
TSTALLOC(VDMOSTcasetempPtr, VDMOStcaseNode, VDMOStempNode);
TSTALLOC(VDMOSTemptcasePtr, VDMOStempNode, VDMOStcaseNode);
TSTALLOC(VDMOSTptpPtr, VDMOStNodePrime, VDMOStNodePrime); /* Rthca between tcase and Vsrc */
TSTALLOC(VDMOSTptcasePtr, VDMOStNodePrime, VDMOStempNode);
TSTALLOC(VDMOSTcasetpPtr, VDMOStempNode, VDMOStNodePrime);
TSTALLOC(VDMOSCktTcktTPtr, VDMOSvcktTbranch, VDMOSvcktTbranch); /* Vsrc=cktTemp to gnd */
TSTALLOC(VDMOSCktTtpPtr, VDMOSvcktTbranch, VDMOStNodePrime);
TSTALLOC(VDMOSTpcktTPtr, VDMOStNodePrime, VDMOSvcktTbranch);
}
}
}
return(OK);

336
src/spicelib/devices/vdmos/vdmostemp.c
View File

@ -5,6 +5,8 @@ Modified: 2000 AlansFixes
VDMOS: 2018 Holger Vogt, 2020 Dietmar Warning
**********/
/* perform the temperature update to the vdmos */
#include "ngspice/ngspice.h"
#include "ngspice/cktdefs.h"
#include "vdmosdefs.h"
@ -12,11 +14,9 @@ VDMOS: 2018 Holger Vogt, 2020 Dietmar Warning
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
int
VDMOStemp(GENmodel *inModel, CKTcircuit *ckt)
{
VDMOSmodel *model = (VDMOSmodel *)inModel;
VDMOSinstance *here;
void VDMOStempUpdate(VDMOSmodel *inModel, VDMOSinstance *here, double Temp, CKTcircuit *ckt) {
VDMOSmodel *model = (VDMOSmodel*)inModel;
double egfet,egfet1;
double fact1,fact2;
@ -28,199 +28,179 @@ VDMOStemp(GENmodel *inModel, CKTcircuit *ckt)
double vt,vtnom;
double xfc;
/* loop through all the resistor models */
for( ; model != NULL; model = VDMOSnextModel(model)) {
fact1 = model->VDMOStnom/REFTEMP;
vtnom = model->VDMOStnom*CONSTKoverQ;
kt1 = CONSTboltz * model->VDMOStnom;
egfet1 = 1.16-(7.02e-4*model->VDMOStnom*model->VDMOStnom)/
(model->VDMOStnom+1108);
arg1 = -egfet1/(kt1+kt1)+1.1150877/(CONSTboltz*(REFTEMP+REFTEMP));
pbfact1 = -2*vtnom *(1.5*log(fact1)+CHARGE*arg1);
/* perform model defaulting */
if(!model->VDMOStnomGiven) {
model->VDMOStnom = ckt->CKTnomTemp;
}
xfc = log(1 - model->VDIOdepletionCapCoeff);
fact1 = model->VDMOStnom/REFTEMP;
vtnom = model->VDMOStnom*CONSTKoverQ;
kt1 = CONSTboltz * model->VDMOStnom;
egfet1 = 1.16-(7.02e-4*model->VDMOStnom*model->VDMOStnom)/
(model->VDMOStnom+1108);
arg1 = -egfet1/(kt1+kt1)+1.1150877/(CONSTboltz*(REFTEMP+REFTEMP));
pbfact1 = -2*vtnom *(1.5*log(fact1)+CHARGE*arg1);
double arg; /* 1 - fc */
/* now model parameter preprocessing */
if (model->VDMOSphi <= 0.0) {
SPfrontEnd->IFerrorf(ERR_FATAL,
"%s: Phi is not positive.", model->VDMOSmodName);
return(E_BADPARM);
}
double dt = Temp - model->VDMOStnom;
model->VDMOSoxideCapFactor = 3.9 * 8.854214871e-12 / 1e-07; /* use default Tox of 100nm */
/* vdmos temperature model */
ratio = Temp/model->VDMOStnom;
here->VDMOStTransconductance = model->VDMOStransconductance
* here->VDMOSm * pow(ratio, model->VDMOSmu);
/* body diode model */
/* limit activation energy to min of .1 */
if (model->VDMOSeg<.1) {
SPfrontEnd->IFerrorf(ERR_WARNING,
"%s: body diode activation energy too small, limited to 0.1",
model->VDMOSmodName);
model->VDMOSeg = .1;
}
/* limit depletion cap coeff to max of .95 */
if (model->VDIOdepletionCapCoeff>.95) {
SPfrontEnd->IFerrorf(ERR_WARNING,
"%s: coefficient Fc too large, limited to 0.95",
model->VDMOSmodName);
model->VDIOdepletionCapCoeff = .95;
}
/* set lower limit of saturation current */
if (model->VDIOjctSatCur < ckt->CKTepsmin)
model->VDIOjctSatCur = ckt->CKTepsmin;
here->VDMOStVth = model->VDMOSvth0 - model->VDMOStype * model->VDMOStcvth * dt;
xfc = log(1 - model->VDIOdepletionCapCoeff);
here->VDMOStksubthres = model->VDMOSksubthres * (1.0 + (model->VDMOStksubthres1 * dt) + (model->VDMOStksubthres2 * dt * dt));
/* loop through all instances of the model */
for(here = VDMOSinstances(model); here!= NULL;
here = VDMOSnextInstance(here)) {
double arg; /* 1 - fc */
if (model->VDMOStexp0Given)
here->VDMOSdrainResistance = model->VDMOSdrainResistance / here->VDMOSm * pow(ratio, model->VDMOStexp0);
else
here->VDMOSdrainResistance = model->VDMOSdrainResistance / here->VDMOSm * (1.0 + (model->VDMOStrd1 * dt) + (model->VDMOStrd2 * dt * dt));
/* perform the parameter defaulting */
if(!here->VDMOSdtempGiven) {
here->VDMOSdtemp = 0.0;
}
if(!here->VDMOStempGiven) {
here->VDMOStemp = ckt->CKTtemp + here->VDMOSdtemp;
}
here->VDMOSgateConductance = here->VDMOSgateConductance / (1.0 + (model->VDMOStrg1 * dt) + (model->VDMOStrg2 * dt * dt));
double dt = here->VDMOStemp - model->VDMOStnom;
here->VDMOSsourceConductance = here->VDMOSsourceConductance / (1.0 + (model->VDMOStrs1 * dt) + (model->VDMOStrs2 * dt * dt));
/* vdmos temperature model */
ratio = here->VDMOStemp/model->VDMOStnom;
here->VDMOStTransconductance = model->VDMOStransconductance
* here->VDMOSm * pow(ratio, model->VDMOSmu);
if (model->VDMOSqsGiven)
here->VDMOSqsResistance = model->VDMOSqsResistance / here->VDMOSm * pow(ratio, model->VDMOStexp1);
here->VDMOStVth = model->VDMOSvth0 - model->VDMOStype * model->VDMOStcvth * dt;
vt = Temp * CONSTKoverQ;
fact2 = Temp/REFTEMP;
kt = Temp * CONSTboltz;
egfet = 1.16-(7.02e-4*Temp*Temp)/
(Temp+1108);
arg = -egfet/(kt+kt)+1.1150877/(CONSTboltz*(REFTEMP+REFTEMP));
pbfact = -2*vt *(1.5*log(fact2)+CHARGE*arg);
here->VDMOStksubthres = model->VDMOSksubthres * (1.0 + (model->VDMOStksubthres1 * dt) + (model->VDMOStksubthres2 * dt * dt));
phio = (model->VDMOSphi - pbfact1) / fact1;
here->VDMOStPhi = fact2 * phio + pbfact; /* needed for distortion analysis */
if (model->VDMOStexp0Given)
here->VDMOSdrainResistance = model->VDMOSdrainResistance / here->VDMOSm * pow(ratio, model->VDMOStexp0);
else
here->VDMOSdrainResistance = model->VDMOSdrainResistance / here->VDMOSm * (1.0 + (model->VDMOStrd1 * dt) + (model->VDMOStrd2 * dt * dt));
/* body diode temperature model */
double pbo, gmaold;
double gmanew, factor;
double tBreakdownVoltage, vte, cbv;
double xbv, xcbv, tol, iter;
double arg1_dT, arg2, arg2_dT;
here->VDMOSgateConductance = here->VDMOSgateConductance / (1.0 + (model->VDMOStrg1 * dt) + (model->VDMOStrg2 * dt * dt));
/* Junction grading temperature adjust */
factor = 1.0 + (model->VDIOgradCoeffTemp1 * dt)
+ (model->VDIOgradCoeffTemp2 * dt * dt);
here->VDIOtGradingCoeff = model->VDIOgradCoeff * factor;
here->VDMOSsourceConductance = here->VDMOSsourceConductance / (1.0 + (model->VDMOStrs1 * dt) + (model->VDMOStrs2 * dt * dt));
pbo = (model->VDIOjunctionPot - pbfact1) / fact1;
gmaold = (model->VDIOjunctionPot - pbo) / pbo;
here->VDIOtJctCap = here->VDMOSm * model->VDIOjunctionCap /
(1 + here->VDIOtGradingCoeff*
(400e-6*(model->VDMOStnom - REFTEMP) - gmaold));
here->VDIOtJctPot = pbfact + fact2*pbo;
gmanew = (here->VDIOtJctPot - pbo) / pbo;
here->VDIOtJctCap *= 1 + here->VDIOtGradingCoeff*
(400e-6*(Temp - REFTEMP) - gmanew);
if (model->VDMOSqsGiven)
here->VDMOSqsResistance = model->VDMOSqsResistance / here->VDMOSm * pow(ratio, model->VDMOStexp1);
vte = model->VDIOn*vt;
vt = here->VDMOStemp * CONSTKoverQ;
fact2 = here->VDMOStemp/REFTEMP;
kt = here->VDMOStemp * CONSTboltz;
egfet = 1.16-(7.02e-4*here->VDMOStemp*here->VDMOStemp)/
(here->VDMOStemp+1108);
arg = -egfet/(kt+kt)+1.1150877/(CONSTboltz*(REFTEMP+REFTEMP));
pbfact = -2*vt *(1.5*log(fact2)+CHARGE*arg);
arg1 = ((Temp / model->VDMOStnom) - 1) * model->VDIOeg / vte;
arg1_dT = model->VDIOeg / (vte*model->VDMOStnom)
- model->VDIOeg*(Temp/model->VDMOStnom -1)/(vte*Temp);
arg2 = model->VDIOxti / model->VDIOn * log(Temp / model->VDMOStnom);
arg2_dT = model->VDIOxti / model->VDIOn / Temp;
here->VDIOtSatCur = here->VDMOSm * model->VDIOjctSatCur * exp(arg1 + arg2);
here->VDIOtSatCur_dT = here->VDMOSm * model->VDIOjctSatCur * exp(arg1 + arg2) * (arg1_dT + arg2_dT);
phio = (model->VDMOSphi - pbfact1) / fact1;
here->VDMOStPhi = fact2 * phio + pbfact; /* needed for distortion analysis */
/* the defintion of f1, just recompute after temperature adjusting
* all the variables used in it */
here->VDIOtF1 = here->VDIOtJctPot*
(1 - exp((1 - here->VDIOtGradingCoeff)*xfc)) /
(1 - here->VDIOtGradingCoeff);
/* same for Depletion Capacitance */
here->VDIOtDepCap = model->VDIOdepletionCapCoeff *
here->VDIOtJctPot;
/* body diode temperature model */
double pbo, gmaold;
double gmanew, factor;
double tBreakdownVoltage, vte, cbv;
double xbv, xcbv, tol, iter;
/* and Vcrit */
here->VDIOtVcrit = vte * log(vte / (CONSTroot2*here->VDIOtSatCur));
/* Junction grading temperature adjust */
factor = 1.0 + (model->VDIOgradCoeffTemp1 * dt)
+ (model->VDIOgradCoeffTemp2 * dt * dt);
here->VDIOtGradingCoeff = model->VDIOgradCoeff * factor;
pbo = (model->VDIOjunctionPot - pbfact1) / fact1;
gmaold = (model->VDIOjunctionPot - pbo) / pbo;
here->VDIOtJctCap = here->VDMOSm * model->VDIOjunctionCap /
(1 + here->VDIOtGradingCoeff*
(400e-6*(model->VDMOStnom - REFTEMP) - gmaold));
here->VDIOtJctPot = pbfact + fact2*pbo;
gmanew = (here->VDIOtJctPot - pbo) / pbo;
here->VDIOtJctCap *= 1 + here->VDIOtGradingCoeff*
(400e-6*(here->VDMOStemp - REFTEMP) - gmanew);
here->VDIOtSatCur = here->VDMOSm * model->VDIOjctSatCur * exp(
((here->VDMOStemp / model->VDMOStnom) - 1) *
model->VDMOSeg / (model->VDMOSn*vt) +
model->VDMOSxti / model->VDMOSn *
log(here->VDMOStemp / model->VDMOStnom));
/* the defintion of f1, just recompute after temperature adjusting
* all the variables used in it */
here->VDIOtF1 = here->VDIOtJctPot*
(1 - exp((1 - here->VDIOtGradingCoeff)*xfc)) /
(1 - here->VDIOtGradingCoeff);
/* same for Depletion Capacitance */
here->VDIOtDepCap = model->VDIOdepletionCapCoeff *
here->VDIOtJctPot;
/* and Vcrit */
vte = model->VDMOSn*vt;
here->VDIOtVcrit = vte * log(vte / (CONSTroot2*here->VDIOtSatCur));
/* limit junction potential to max of 1/FC */
if (here->VDIOtDepCap > 2.5) {
here->VDIOtJctPot = 2.5 / model->VDMOSn;
here->VDIOtDepCap = model->VDMOSn*here->VDIOtJctPot;
SPfrontEnd->IFerrorf(ERR_WARNING,
"%s: junction potential VJ too large, limited to %f",
model->VDMOSmodName, here->VDIOtJctPot);
}
/* and now to compute the breakdown voltage, again, using
* temperature adjusted basic parameters */
if (model->VDMOSbvGiven) {
/* tlev == 0 */
tBreakdownVoltage = fabs(model->VDMOSbv);
cbv = model->VDMOSibv;
if (cbv < here->VDIOtSatCur * tBreakdownVoltage / vt) {
cbv = here->VDIOtSatCur * tBreakdownVoltage / vt;
#ifdef TRACE
SPfrontEnd->IFerrorf(ERR_WARNING, "%s: breakdown current increased to %g to resolve", here->VDMOSname, cbv);
SPfrontEnd->IFerrorf(ERR_WARNING,
"incompatibility with specified saturation current");
#endif
xbv = tBreakdownVoltage;
}
else {
tol = ckt->CKTreltol*cbv;
xbv = tBreakdownVoltage - model->VDIObrkdEmissionCoeff*vt*log(1 + cbv /
(here->VDIOtSatCur));
iter = 0;
for (iter = 0; iter < 25; iter++) {
xbv = tBreakdownVoltage - model->VDIObrkdEmissionCoeff*vt*log(cbv /
(here->VDIOtSatCur) + 1 - xbv / vt);
xcbv = here->VDIOtSatCur *
(exp((tBreakdownVoltage - xbv) / (model->VDIObrkdEmissionCoeff*vt)) - 1 + xbv / vt);
if (fabs(xcbv - cbv) <= tol) goto matched;
}
#ifdef TRACE
SPfrontEnd->IFerrorf(ERR_WARNING, "%s: unable to match forward and reverse diode regions: bv = %g, ibv = %g", here->VDMOSname, xbv, xcbv);
#endif
}
matched:
here->VDIOtBrkdwnV = xbv;
}
/* transit time temperature adjust */
factor = 1.0 + (model->VDIOtranTimeTemp1 * dt)
+ (model->VDIOtranTimeTemp2 * dt * dt);
here->VDIOtTransitTime = model->VDIOtransitTime * factor;
/* Series resistance temperature adjust */
here->VDIOtConductance = here->VDIOconductance / (1.0 + (model->VDMOStrb1 * dt) + (model->VDMOStrb2 * dt * dt));
here->VDIOtF2 = exp((1 + here->VDIOtGradingCoeff)*xfc);
here->VDIOtF3 = 1 - model->VDIOdepletionCapCoeff*
(1 + here->VDIOtGradingCoeff);
}
/* limit junction potential to max of 1/FC */
if (here->VDIOtDepCap > 2.5) {
here->VDIOtJctPot = 2.5 / model->VDIOn;
here->VDIOtDepCap = model->VDIOn*here->VDIOtJctPot;
SPfrontEnd->IFerrorf(ERR_WARNING,
"%s: junction potential VJ too large, limited to %f",
model->VDMOSmodName, here->VDIOtJctPot);
}
/* and now to compute the breakdown voltage, again, using
* temperature adjusted basic parameters */
if (model->VDIObvGiven) {
/* tlev == 0 */
tBreakdownVoltage = fabs(model->VDIObv);
cbv = model->VDIOibv;
if (cbv < here->VDIOtSatCur * tBreakdownVoltage / vt) {
cbv = here->VDIOtSatCur * tBreakdownVoltage / vt;
#ifdef TRACE
SPfrontEnd->IFerrorf(ERR_WARNING, "%s: breakdown current increased to %g to resolve", here->VDMOSname, cbv);
SPfrontEnd->IFerrorf(ERR_WARNING,
"incompatibility with specified saturation current");
#endif
xbv = tBreakdownVoltage;
}
else {
tol = ckt->CKTreltol*cbv;
xbv = tBreakdownVoltage - model->VDIObrkdEmissionCoeff*vt*log(1 + cbv /
(here->VDIOtSatCur));
iter = 0;
for (iter = 0; iter < 25; iter++) {
xbv = tBreakdownVoltage - model->VDIObrkdEmissionCoeff*vt*log(cbv /
(here->VDIOtSatCur) + 1 - xbv / vt);
xcbv = here->VDIOtSatCur *
(exp((tBreakdownVoltage - xbv) / (model->VDIObrkdEmissionCoeff*vt)) - 1 + xbv / vt);
if (fabs(xcbv - cbv) <= tol) goto matched;
}
#ifdef TRACE
SPfrontEnd->IFerrorf(ERR_WARNING, "%s: unable to match forward and reverse diode regions: bv = %g, ibv = %g", here->VDMOSname, xbv, xcbv);
#endif
}
matched:
here->VDIOtBrkdwnV = xbv;
}
/* transit time temperature adjust */
factor = 1.0 + (model->VDIOtranTimeTemp1 * dt)
+ (model->VDIOtranTimeTemp2 * dt * dt);
here->VDIOtTransitTime = model->VDIOtransitTime * factor;
/* Series resistance temperature adjust */
factor = 1.0 + (model->VDIOtrb1) * dt
+ (model->VDIOtrb2 * dt * dt);
here->VDIOtConductance = here->VDIOconductance / factor;
here->VDIOtConductance_dT = -here->VDIOconductance * (model->VDIOtrb1 + model->VDIOtrb2 * dt) / (factor*factor);
here->VDIOtF2 = exp((1 + here->VDIOtGradingCoeff)*xfc);
here->VDIOtF3 = 1 - model->VDIOdepletionCapCoeff*
(1 + here->VDIOtGradingCoeff);
}
int
VDMOStemp(GENmodel *inModel, CKTcircuit *ckt)
{
VDMOSmodel *model = (VDMOSmodel*)inModel;
VDMOSinstance *here;
/* loop through all the vdmos models */
for( ; model != NULL; model = VDMOSnextModel(model)) {
/* loop through all the instances */
for(here=VDMOSinstances(model);here;here=VDMOSnextInstance(here)) {
if(!here->VDMOSdtempGiven) here->VDMOSdtemp = 0.0;
if(!here->VDMOStempGiven)
here->VDMOStemp = ckt->CKTtemp + here->VDMOSdtemp;
VDMOStempUpdate(model, here, here->VDMOStemp, ckt);
} /* instance */
} /* model */
return(OK);
}