Fixed MOS2 scaling.

This commit is contained in:
Árpád Bűrmen 2025-04-17 13:49:47 +02:00
parent 7b1ecb261b
commit 1a175dde2f
2 changed files with 12 additions and 12 deletions

View File

@ -34,7 +34,7 @@ MOS2load(GENmodel *inModel, CKTcircuit *ckt)
double GateBulkOverlapCap;
double GateDrainOverlapCap;
double GateSourceOverlapCap;
double OxideCap;
double OxideCap, unscaledOxideCap;
double SourceSatCur;
double arg;
double cbhat;
@ -144,8 +144,8 @@ MOS2load(GENmodel *inModel, CKTcircuit *ckt)
here->MOS2m * EffectiveLength;
Beta = here->MOS2tTransconductance * here->MOS2w *
here->MOS2m/EffectiveLength;
OxideCap = model->MOS2oxideCapFactor * EffectiveLength *
here->MOS2m * here->MOS2w;
unscaledOxideCap = model->MOS2oxideCapFactor * EffectiveLength * here->MOS2w;
OxideCap = unscaledOxideCap*here->MOS2m;
if(SenCond){
@ -599,7 +599,7 @@ next1: if(vbs <= -3*vt) {
/*XXX constant per device */
factor = 0.125*model->MOS2narrowFactor*2.0*M_PI*EPSSIL/
OxideCap*EffectiveLength;
unscaledOxideCap*EffectiveLength;
/*XXX constant per device */
eta = 1.0+factor;
vbin = here->MOS2tVbi*model->MOS2type+factor*phiMinVbs;
@ -664,7 +664,7 @@ next1: if(vbs <= -3*vt) {
1e4 /*(cm**2/m**2)*/;
cdonco = -(gamasd*dsrgdb+dgddvb*sarg1)+factor;
xn = 1.0+cfs/OxideCap*here->MOS2m*
xn = 1.0+cfs/unscaledOxideCap*
here->MOS2w*EffectiveLength+cdonco;
tmp = vt*xn;

View File

@ -134,9 +134,9 @@ MOS2noise(int mode, int operation, GENmodel * genmodel, CKTcircuit * ckt,
N_GAIN, inst->MOS2dNodePrime, inst->MOS2sNodePrime,
(double) 0.0);
if (newcompat.s3) {
noizDens[MOS2FLNOIZ] *= model->MOS2fNcoef *
noizDens[MOS2FLNOIZ] *= inst->MOS2m * model->MOS2fNcoef *
exp(model->MOS2fNexp *
log(MAX(fabs(inst->MOS2cd), N_MINLOG))) /
log(MAX(fabs(inst->MOS2cd / inst->MOS2m), N_MINLOG))) /
(data->freq *
inst->MOS2w *
(inst->MOS2l - 2 * model->MOS2latDiff) *
@ -144,18 +144,18 @@ MOS2noise(int mode, int operation, GENmodel * genmodel, CKTcircuit * ckt,
} else {
switch (model->MOS2nlev) {
case 0:
noizDens[MOS2FLNOIZ] *= model->MOS2fNcoef *
noizDens[MOS2FLNOIZ] *= inst->MOS2m * model->MOS2fNcoef *
exp(model->MOS2fNexp *
log(MAX(fabs(inst->MOS2cd), N_MINLOG))) /
log(MAX(fabs(inst->MOS2cd / inst->MOS2m), N_MINLOG))) /
(data->freq *
(inst->MOS2l - 2 * model->MOS2latDiff) *
(inst->MOS2l - 2 * model->MOS2latDiff) *
model->MOS2oxideCapFactor);
break;
case 1:
noizDens[MOS2FLNOIZ] *= model->MOS2fNcoef *
noizDens[MOS2FLNOIZ] *= inst->MOS2m * model->MOS2fNcoef *
exp(model->MOS2fNexp *
log(MAX(fabs(inst->MOS2cd), N_MINLOG))) /
log(MAX(fabs(inst->MOS2cd / inst->MOS2m), N_MINLOG))) /
(data->freq *
inst->MOS2w *
(inst->MOS2l - 2 * model->MOS2latDiff) *
@ -163,7 +163,7 @@ MOS2noise(int mode, int operation, GENmodel * genmodel, CKTcircuit * ckt,
break;
case 2: case 3:
noizDens[MOS2FLNOIZ] *= model->MOS2fNcoef *
inst->MOS2gm * inst->MOS2gm /
inst->MOS2gm * inst->MOS2gm / inst->MOS2m /
(pow(data->freq, model->MOS2fNexp) *
inst->MOS2w *
(inst->MOS2l - 2 * model->MOS2latDiff) *