Add 'factuo' as redundandant synonym to 'mulu0'

to enable degradation simulation with BSIM3 and BSIM4.
This commit is contained in:
Holger Vogt 2026-02-17 12:53:10 +01:00
parent a5f5fe28fb
commit 19a444c72c
6 changed files with 6 additions and 0 deletions

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@ -29,6 +29,7 @@ IOP( "acnqsmod", BSIM3_ACNQSMOD, IF_INTEGER, "AC NQS model selector"),
IOP( "geo", BSIM3_GEO, IF_INTEGER, "ACM model drain/source connection"),
IOP( "delvto", BSIM3_DELVTO, IF_REAL, "Zero bias threshold voltage variation"),
IOP( "mulu0", BSIM3_MULU0, IF_REAL, "Low field mobility multiplier"),
IOPR( "factuo", BSIM3_MULU0, IF_REAL, "Low field mobility multiplier"),
IP( "ic", BSIM3_IC, IF_REALVEC , "Vector of DS,GS,BS initial voltages"),
IOP( "icvgs", BSIM3_IC_VGS, IF_REAL , "GS initial voltage"),
IOP( "icvds", BSIM3_IC_VDS, IF_REAL , "DS initial voltage"),

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@ -29,6 +29,7 @@ IOP( "nqsmod", BSIM3v32_NQSMOD, IF_INTEGER, "Non-quasi-static model selector"),
IOP( "geo", BSIM3v32_GEO, IF_INTEGER, "ACM model drain/source connection"),
IOP( "delvto", BSIM3v32_DELVTO, IF_REAL , "Zero bias threshold voltage variation"),
IOP( "mulu0", BSIM3v32_MULU0, IF_REAL , "Low field mobility multiplier"),
IOPR( "factuo", BSIM3v32_MULU0, IF_REAL , "Low field mobility multiplier"),
IP( "ic", BSIM3v32_IC, IF_REALVEC , "Vector of DS,GS,BS initial voltages"),
OP( "gmbs", BSIM3v32_GMBS, IF_REAL, "Gmb"),
OP( "gm", BSIM3v32_GM, IF_REAL, "Gm"),

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@ -56,6 +56,7 @@ IOP( "rbpd", BSIM4_RBPD, IF_REAL , "Body resistance"),
IOP( "delvto", BSIM4_DELVTO, IF_REAL , "Zero bias threshold voltage variation"),
IOPR("delvt0", BSIM4_DELVTO, IF_REAL , "Zero bias threshold voltage variation"),
IOP( "mulu0", BSIM4_MULU0, IF_REAL, "Low field mobility multiplier"),
IOPR( "factuo", BSIM4_MULU0, IF_REAL, "Low field mobility multiplier"),
IOP( "xgw", BSIM4_XGW, IF_REAL, "Distance from gate contact center to device edge"),
IOP( "ngcon", BSIM4_NGCON, IF_REAL, "Number of gate contacts"),
IOP( "wnflag", BSIM4_WNFLAG, IF_INTEGER, "W/NF device flag for bin selection"),

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@ -47,6 +47,7 @@ IOP( "rbpd", BSIM4v5_RBPD, IF_REAL , "Body resistance"),
IOP( "delvto", BSIM4v5_DELVTO, IF_REAL , "Zero bias threshold voltage variation"),
IOPR( "delvt0", BSIM4v5_DELVTO, IF_REAL , "Zero bias threshold voltage variation"),
IOP( "mulu0", BSIM4v5_MULU0, IF_REAL, "Low field mobility multiplier"),
IOPR( "factuo", BSIM4v5_MULU0, IF_REAL, "Low field mobility multiplier"),
IOP( "xgw", BSIM4v5_XGW, IF_REAL, "Distance from gate contact center to device edge"),
IOP( "ngcon", BSIM4v5_NGCON, IF_REAL, "Number of gate contacts"),

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@ -53,6 +53,7 @@ IOP( "rbpd", BSIM4v6_RBPD, IF_REAL , "Body resistance"),
IOP( "delvto", BSIM4v6_DELVTO, IF_REAL , "Zero bias threshold voltage variation"),
IOPR( "delvt0", BSIM4v6_DELVTO, IF_REAL , "Zero bias threshold voltage variation"),
IOP( "mulu0", BSIM4v6_MULU0, IF_REAL, "Low field mobility multiplier"),
IOPR( "factuo", BSIM4v6_MULU0, IF_REAL, "Low field mobility multiplier"),
IOP( "xgw", BSIM4v6_XGW, IF_REAL, "Distance from gate contact center to device edge"),
IOP( "ngcon", BSIM4v6_NGCON, IF_REAL, "Number of gate contacts"),

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@ -54,6 +54,7 @@ IOP( "rbpd", BSIM4v7_RBPD, IF_REAL , "Body resistance"),
IOP( "delvto", BSIM4v7_DELVTO, IF_REAL , "Zero bias threshold voltage variation"),
IOPR( "delvt0", BSIM4v7_DELVTO, IF_REAL , "Zero bias threshold voltage variation"),
IOP( "mulu0", BSIM4v7_MULU0, IF_REAL, "Low field mobility multiplier"),
IOPR( "factuo", BSIM4v7_MULU0, IF_REAL, "Low field mobility multiplier"),
IOP( "xgw", BSIM4v7_XGW, IF_REAL, "Distance from gate contact center to device edge"),
IOP( "ngcon", BSIM4v7_NGCON, IF_REAL, "Number of gate contacts"),
IOP( "wnflag", BSIM4v7_WNFLAG, IF_INTEGER, "W/NF device flag for bin selection"),