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VDMOS change thermal left and rigth side signs that mos and diode part follow same logic

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dwarning 2020-06-06 18:26:08 +02:00 committed by Holger Vogt
parent 689d561c9e
commit 17497eddec
1 changed files with 16 additions and 18 deletions
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34
src/spicelib/devices/vdmos/vdmosload.c
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@ -416,13 +416,11 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
}
if (selfheat) {
/* note that sign is switched because power flows out
of device into the temperature node. */
here->VDMOSgtempg = -model->VDMOStype*here->VDMOSgm * Vds;
here->VDMOSgtempT = -GmT * Vds;
here->VDMOSgtempd = -model->VDMOStype* (here->VDMOSgds * Vds + cdrain);
here->VDMOScth = - cdrain * Vds
- 1/here->VDMOSdrainConductance * cdrain*cdrain
/* power flows from ground into the temperature node. */
here->VDMOSgtempg = model->VDMOStype*here->VDMOSgm * Vds;
here->VDMOSgtempT = GmT * Vds;
here->VDMOSgtempd = model->VDMOStype* (here->VDMOSgds * Vds + cdrain);
here->VDMOScth = cdrain * Vds
- model->VDMOStype * (here->VDMOSgtempg * Vgs + here->VDMOSgtempd * Vds)
- here->VDMOSgtempT * delTemp;
}
@ -577,7 +575,7 @@ bypass:
if (selfheat) {
*(ckt->CKTrhs + here->VDMOSdNodePrime) += GmT * delTemp;
*(ckt->CKTrhs + here->VDMOSsNodePrime) += -GmT * delTemp;
*(ckt->CKTrhs + here->VDMOStempNode) -= here->VDMOScth + ceqqth; /* MOS dissipated power + Cthj current */
*(ckt->CKTrhs + here->VDMOStempNode) += here->VDMOScth - ceqqth; /* MOS dissipated power + Cthj current */
double vCktTemp = (ckt->CKTtemp-CONSTCtoK); /* ckt temperature */
if (ckt->CKTmode & MODETRANOP)
vCktTemp *= ckt->CKTsrcFact;
@ -621,10 +619,10 @@ bypass:
(*(here->VDMOSDPtempPtr) += GmT);
(*(here->VDMOSSPtempPtr) += -GmT);
(*(here->VDMOSGPtempPtr) += 0.0);
(*(here->VDMOSTemptempPtr) += gTtt + 1/model->VDMOSrthjc + gcTt);
(*(here->VDMOSTempgpPtr) += gTtg);
(*(here->VDMOSTempdpPtr) += gTtdp);
(*(here->VDMOSTempspPtr) += gTtsp);
(*(here->VDMOSTemptempPtr) += -gTtt + 1/model->VDMOSrthjc + gcTt);
(*(here->VDMOSTempgpPtr) += -gTtg);
(*(here->VDMOSTempdpPtr) += -gTtdp);
(*(here->VDMOSTempspPtr) += -gTtsp);
(*(here->VDMOSTemptcasePtr) += -1/model->VDMOSrthjc);
(*(here->VDMOSTcasetempPtr) += -1/model->VDMOSrthjc);
(*(here->VDMOSTcasetcasePtr) += 1/model->VDMOSrthjc + 1/model->VDMOSrthca);
@ -879,9 +877,9 @@ load:
*(ckt->CKTrhs + here->VDIOposPrimeNode) += cdeq;
}
if (selfheat) {
*(ckt->CKTrhs + here->VDMOSdNode) += dIdio_dT*delTemp;
*(ckt->CKTrhs + here->VDIOposPrimeNode) -= dIdio_dT*delTemp;
*(ckt->CKTrhs + here->VDMOStempNode) += Ith - model->VDMOStype*dIth_dVdio*vd + dIth_dT*delTemp; /* Diode dissipated power */
*(ckt->CKTrhs + here->VDIOposPrimeNode) += dIdio_dT*delTemp;
*(ckt->CKTrhs + here->VDMOSdNode) += -dIdio_dT*delTemp;
*(ckt->CKTrhs + here->VDMOStempNode) += Ith - model->VDMOStype*dIth_dVdio*vd - dIth_dT*delTemp; /* Diode dissipated power */
}
/*
* load matrix
@ -894,11 +892,11 @@ load:
*(here->VDIORPsPtr) -= gspr;
*(here->VDIORPdPtr) -= gd;
if (selfheat) {
(*(here->VDMOSTemptempPtr) += dIth_dT);
(*(here->VDIOTempposPrimePtr) += -dIth_dVdio);
(*(here->VDIOTempnegPtr) += dIth_dVdio);
(*(here->VDIOPosPrimetempPtr) += -dIdio_dT);
(*(here->VDIONegtempPtr) += dIdio_dT);
(*(here->VDMOSTemptempPtr) += -dIth_dT);
(*(here->VDIOPosPrimetempPtr) += dIdio_dT);
(*(here->VDIONegtempPtr) += -dIdio_dT);
}
}
}