ngspice/DEVICES

DEVICES
=======

Table of contents

1. Introduction
2. Linear Devices
 2.1 CAP - Linear capacitor
 2.2 IND - Linear inductor
 2.3 RES - Linear resistor
3. Distributed Elements
 3.1 CPL - Simple Coupled Multiconductor Lines (Kspice)
 3.2 LTRA - Lossy Transmission line
 3.3 TRA  - Transmission line
 3.4 TXL - Simple Lossy Transmission Line (Kspice)
 3.5 URC - Uniform distributed RC line
4. Voltage and current sources
 4.1 ASRC - Arbitrary Source
 4.2 CCCS - Current Controlled Current Source
 4.3 CCVS - Current Controlled Voltage Source
 4.4 ISRC - Independent Current Source
 4.5 VCCS - Voltage Controlled Current Source
 4.6 VCVS - Voltage Controlled Voltage Source
 4.7 VSRC - Independent Voltage Source
5. Switches
 5.1 CSW - Current controlled switch
 5.2 SW - Voltage controlled switch
6. Diodes
 6.1 DIO - Junction Diode
7. Bipolar devices 
 7.1 BJT - Bipolar Junction Transistor
 7.2 BJT2 - Bipolar Junction Transistor
 7.3 VBIC - Bipolar Junction Transistor
8. FET devices
 8.1 JFET - Junction Field Effect transistor
9. HFET Devices
 9.1 HFET1 - Heterostructure Field Effect Transistor Level 1
 9.2 HFET2 - Heterostructure Field Effect Transistor Level 2
10. MES devices
 10.1 MES - MESFET model
 10.2 MESA - MESFET model (MacSpice3f4)
11. MOS devices
 11.1 MOS1 - Level 1 MOS model
 11.2 MOS2 - Level 2 MOS model
 11.3 MOS3 - Level 3 MOS model
 11.4 MOS6 - Level 6 MOS model
 11.5 MOS9 - Level 9 MOS model
 11.6 BSIM1 - BSIM model level 1
 11.7 BSIM2 - BSIM model level 2
 11.8 BSIM3v0 - BSIM model level 3
 11.9 BSIM3v1 - BSIM model level 3
 11.10 BSIM3v1 - BSIM model level 3
 11.11 BSIM3v1 - BSIM model level 3
 11.12 BSIM3 - BSIM model level 3
 11.13 BSIM4 - BSIM model level 4
 11.14 HiSIM - Hiroshima-university STARC IGFET Model
12. SOI devices
 12.1 BSIM3SOI_FD - SOI model (fully depleted devices)
 12.2 BSIM3SOI_DD - SOI Model (dynamic depletion model)
 12.3 BSIM3SOI_PD - SOI model (partially depleted devices)
 12.4 BSIM3SOI - SOI model (partially/full depleted devices)
 12.5 SOI3 - STAG SOI3 Model
13. Other devices
 13.1 EKV - EKV model

                             ------------------

1. Introduction

This file contains the status of devices available in ngspice. This file
will be updated every time the device specific code is altered or changed to reflect the current status of this important part of the simulator


2. Linear Devices


 2.1 CAP - Linear capacitor
     
     Ver:    N/A
     Class:  C
     Level:  1 (and only)
     Dir:    devices/cap
     Status:

     Enhancements over the original model:
      - Parallel Multiplier
      - Temperature difference from circuit temperature
      - Preliminary technology scaling support
      - Model capacitance
      - Cj calculation based on relative dielectric constant
        and insulator thickness


 2.2 IND - Linear Inductor
      
     Ver:    N/A
     Class:  L
     Level:  1 (and only)
     Dir:    devices/ind
     Status:

     Enhancements over the original model:
      - Parallel Multiplier
      - Temperature difference from circuit temperature
      - Preliminary technology scaling support
      - Model inductance
      - Inductance calculation for toroids or solenoids
        on the model line.

 2.3 RES - Linear resistor

     Ver:    N/A
     Class:  R
     Level:  1 (and only)
     Dir:    devices/res
     Status:

     Enhancements over the original model:
      - Parallel Multiplier
      - Different value for ac analysis
      - Temperature difference from circuit temperature
      - Noiseless resistor
      - Flicker noise
      - Preliminary technology scaling support


3. Distributed elements


 3.1 CPL - Simple Coupled Multiconductor Lines (Kspice)

     Ver:    N/A
     Class:  P
     Level:  1 (and only)
     Dir:    devices/cpl
     Status:

     This model comes from swec and kspice. It is not documented, if
     you have kspice docs, can you write a short description
     of its use ?

     - Does not implement parallel code switches
     - Probably a lot of memory leaks

     Enhancements over the original model:

     - Better integrated into ngspice adding CPLask, CPLmAsk and
       CPLunsetup functions

 3.2 LTRA - Lossy Transmission line

     Ver:    N/A
     Class:  O
     Level:  1 (and only)
     Dir:    devices/ltra
     Status:

     - Original spice model.
     - Does not implement parallel code switches.

 3.3 TRA  - Transmission line
  
     Ver:    N/A
     Class:  T
     Level:  1 (and only)
     Dir:    devices/tra
     Status:

    - Original spice model.
    - Does not implement parallel code switches.

 3.4 TXL - Simple Lossy Transmission Line (Kspice)

     Ver:    N/A
     Class:  Y
     Level:  1 (and only)
     Dir:    devices/txl
     Status:

     This model comes from kspice. It is not documented, if
     you have kspice docs, can you write a short description
     of its use ?

     There is some code left out from compilation:
     TXLaccept and TXLfindBr. Any ideas ?

     - Does not implement parallel code switches


 3.5 URC - Uniform distributed RC line

     Ver:    N/A
     Class:  U
     Level:  1 (and only)
     Dir:    devices/urc
     Status:

     - Original spice model.
     - Does not implement parallel code switches.


4. Voltage and current sources

 4.1 ASRC - Arbitrary Source
     
     Ver:    N/A
     Class:  B
     Level:  1 (and only)
     Dir:    devices/asrc
     Status:

     The arbitrary source code has been corrected with the patch
     available on the Internet. There is still an issue to fix, the
     current of current-controlled generators.

 4.2 CCCS - Current Controlled Current Source
        
      Ver:    N/A
      Class:  F
      Level:  1 (and only)
      Dir:    devices/cccs
      Status:

      - Original spice model.

 4.3 CCVS - Current Controlled Voltage Source
        
     Ver:    N/A
     Class:  H
     Level:  1 (and only)
     Dir:    devices/ccvs
     Status:

     - Original spice model.


 4.4 ISRC - Independent Current Source
        
     Ver:    N/A
     Class:  I
     Level:  1 (and only)
     Dir:    devices/isrc
     Status:

     This is the original spice device improved by Alan Gillespie
     with the following features:

     - Source ramping
     - Check for non-monotonic series in PWL


 4.5 VCCS - Voltage Controlled Current Source

     Ver:    N/A
     Class:  G
     Level:  1 (and only)
     Dir:    devices/vccs
     Status:

     - Original spice model.


4.6 VCVS - Voltage Controlled Voltage Source

    Ver:    N/A
    Class:  E
    Level:  1 (and only)
    Dir:    devices/vcvs
    Status:

    - Original spice model.

 4.7 VSRC - Independent Voltage Source

     Ver:    N/A
     Class:  V
     Level:  1 (and only)
     Dir:    devices/vsrc
     Status:

     This is the original spice device improved by Alan Gillespie
     with the following features:

     - Source ramping
     - Check for non-monotonic series in PWL


5. Switches

 5.1 CSW - Current controlled switch
     
      Ver:    N/A
      Class:  W
      Level:  1 (and only)
      Dir:    devices/csw
      Status:

      - This model comes from Jon Engelbert.


 5.2 SW - Voltage controlled switch

     Ver:    N/A
     Class:  S
     Level:  1 (and only)
     Dir:    devices/sw
     Status:

     - This model comes from Jon Engelbert.


6. Diodes

 6.1 DIO - Junction Diode

     Ver:    N/A
     Class:  D
     Level:  1 (and only)
     Dir:    devices/dio
     Status:

     Enhancements over the original model:
     - Parallel Multiplier
     - Temperature difference from circuit temperature
     - Forward and reverse knee currents
     - Periphery (sidewall) effects
     - Temperature correction of some parameters


7. Bipolar devices 

 7.1 BJT - Bipolar Junction Transistor

     Ver:    N/A
     Class:  Q
     Level:  1
     Dir:    devices/bjt
     Status:

     Enhancements over the original model:
     - Parallel Multiplier
     - Temperature difference from circuit temperature
     - Different area parameters for collector, base and emitter

 7.2 BJT2 - Bipolar Junction Transistor

     Ver:    N/A
     Class:  Q
     Level:  2
     Dir:    devices/bjt2
     Status:

     This is the BJT model written by Alan Gillespie to support lateral
     devices. The model has been hacked by Dietmar Warning fixing some bugs
     and adding some features (temp. correction on resistors).

     Enhancements over the original model:
     - Temperature correction on rc,rb,re
     - Parallel Multiplier
     - Temperature difference from circuit temperature
     - Different area parameters for collector, base and emitter

 7.3 VBIC - Bipolar Junction Transistor
        
     Ver:    N/A
     Class:  Q
     Level:  4
     Dir:    devices/vbic
     Status:

     This is the Vertical Bipolar InterCompany model. The author of VBIC is
     Colin McAndrew mcandrew@ieee.org
     Spice3 Implementation: Dietmar Warning DAnalyse GmbH
     Web Site: http://www.designers-guide.com/VBIC/index.html

     Notes: This is the 4 terminals model, without excess phase and thermal
            network.


8. FET devices

 8.1 JFET - Junction Field Effect transistor

     Ver:    N/A
     Class:  J
     Level:  1
     Dir:    devices/jfet
     Status:

     This is the original spice JFET model.

     Enhancements over the original model:
     - Alan Gillespie's modified diode model
     - Parallel multiplier
     - Instance temperature as difference for circuit temperature

 8.2 JFET2 - Junction Field Effect Transistor  (PS model)

     Ver:    N/A
     Class:  J
     Level:  2
     Dir:    devices/jfet2
     Status:

     This is the Parker Skellern model for MESFETs.

     Web Site: http://www.elec.mq.edu.au/cnerf/psmodel.htm

     Enhancements over the original model:
     - Parallel multiplier
     - Instance temperature as difference for circuit temperature


9. HFET Devices

   Added code from macspice3f4 HFET1&2 and MESA model 
   Original note:
     Added device calls for Mesfet models and HFET models
     provided by Trond Ytterdal as of Nov 98 

 9.1 HFET1 - Heterostructure Field Effect Transistor Level 1

     Ver:    N/A
     Class:  Z
     Level:  5
     Dir:    devices/hfet1
     Status:

     This is the Heterostructure Field Effect Transistor model from:
     K. Lee, M. Shur, T. A. Fjeldly and T. Ytterdal
     "Semiconductor Device Modeling in VLSI", 
     1993, Prentice Hall, New Jersey

     Enhancements over the original model:
     - Parallel multiplier
     - Instance temperature as difference for circuit temperature
     - Added pole-zero analysis


 9.2 HFET2 - Heterostructure Field Effect Transistor Level 2

     Ver:    N/A
     Class:  Z
     Level:  6
     Dir:    devices/hfet2
     Status:

     Simplified version of hfet1

     Enhancements over the original model:
     - Parallel multiplier
     - Instance temperature as difference for circuit temperature
     - Added pole-zero analysis


10. MES devices

 10.1 MES - MESFET model
      
      Ver:    N/A
      Class:  Z
      Level:  1
      Dir:    devices/mes
      Status:

      This is the original spice3 MESFET model (Statz).

      Enhancements over the original model:
      - Parallel multiplier
      - Alan Gillespie junction diodes implementation


  Added code from macspice3f4 HFET1&2 and MESA model 
  Original note:
  Added device calls for Mesfet models and HFET models
  provided by Trond Ytterdal as of Nov 98 

10.2 MESA - MESFET model (MacSpice3f4)

     Ver:    N/A
     Class:  Z
     Level:  2,3,4
     Dir:    devices/mesa
     Status:

     This is a multilevel model. It contains code for mesa levels
     2,3 and 4

     Enhancements over the original model:
     - Parallel multiplier
     - Instance temperature as difference from circuit temperature
     - Added pole-zero analysis



11. MOS devices

 11.1 MOS1 - Level 1 MOS model
             
      Ver:    N/A
      Class:  M
      Level:  1
      Dir:    devices/mos1
      Status:

      This is the so-called Schichman-Hodges model.

      Enhancements over the original model:
      - Parallel multiplier
      - Temperature difference from circuit temperature

 11.2 MOS2 - Level 2 MOS model
        
      Ver:    N/A
      Class:  M
      Level:  2
      Dir:    devices/mos2
      Status:

      This is the so-called  Grove-Frohman model.

      Enhancements over the original model:
      - Parallel multiplier
      - Temperature difference from circuit temperature


 11.3 MOS3 - Level 3 MOS model

      Ver:    N/A
      Class:  M
      Level:  3
      Dir:    devices/mos3
      Status:

      Enhancements over the original model:
      - Parallel multiplier
      - Temperature difference from circuit temperature


 11.4 MOS6 - Level 6 MOS model

      Ver:    N/A
      Class:  M
      Level:  6
      Dir:    devices/mos6
      Status:

      Enhancements over the original model:
      - Parallel multiplier
      - Temperature difference from circuit temperature


 11.5 MOS9 - Level 9 MOS model

      Ver:    N/A
      Class:  M
      Level:  9
      Dir:    devices/mos9
      Status:

      Enhancements over the original model:
      - Temperature difference from circuit temperature


 11.6 BSIM1 - BSIM model level 1

      Ver:    N/A
      Class:  M
      Level:  4
      Dir:    devices/bsim1
      Status:
 
      Enhancements over the original model:
      - Parallel multiplier
      - Noise analysis

      BUGS:
      Distortion analysis probably does not
      work with "parallel" devices. Equations
      are too intricate to deal with. Any one
      has ideas on the subject ?


 11.7 BSIM2 - BSIM model level 2
       
      Ver:    N/A
      Class:  M
      Level:  5
      Dir:    devices/bsim2
      Status:

      Enhancements over the original model:
      - Parallel multiplier
      - Noise analysis


 11.8 BSIM3v0 - BSIM model level 3
      
      Ver:    3.0
      Class:  M
      Level:  8 & 49, version = 3.0
      Dir:    devices/bsim3v0
      Status: TO BE TESTED AND IMPROVED

 11.9 BSIM3v1 - BSIM model level 3

      Ver:    3.1
      Class:  M
      Level:  8 & 49, version = 3.1
      Dir:    devices/bsim3v1
      Status: TO BE TESTED


 11.10 BSIM3v1 - BSIM model level 3

      Ver:    3.1
      Class:  M
      Level:  8 & 49, version = 3.1a
      Dir:    devices/bsim3v1a
      Status: TO BE TESTED AND IMPROVED

      This is the BSIM3v3.1 model modified by Alan Gillespie.


 11.11 BSIM3v1 - BSIM model level 3
       
       Ver:    3.1
       Class:  M
       Level:  8 & 49, version = 3.1s
       Dir:    devices/bsim3v1s
       Status: TO BE TESTED AND IMPROVED

       This is the BSIM3v3.1 model modified by Serban Popescu.
       This is level 49 model. It is an implementation that supports
       "HDIF" and "M" parameters.


 11.12 BSIM3 - BSIM model level 3

       Ver:    3.2.4 - 3.3.0
       Class:  M
       Level:  8 & 49, version = 3.2.2, 3.2.3, 3.2.4, 3.3.0
       Dir:    devices/bsim3
       Status: TO BE TESTED

       This is the BSIM3v3.2.4 model from Berkeley device group.
       You can find some test netlists with results for this model
       on its web site.

        Web site: http://www-device.eecs.berkeley.edu/~bsim3

        Enhancements over the original model:
        - Parallel Multiplier
        - ACM Area Calculation Method
        - Multirevision code (supports all 3v3.2 minor revisions)
        - NodesetFix


 11.13 BSIM4 - BSIM model level 4
 
       Ver:    4.2.0 - 4.6.1
       Class:  M
       Level:  14 & 54, version = 4.2, 4.3, 4.4, 4.5, 4.6.1
       Dir:    devices/bsim4
       Status:

       This is the BSIM4 device model from Berkeley Device Group.
       Test are available on its web site.

       Web site: http://www-device.eecs.berkeley.edu/~bsim3/bsim4.html


 11.14 HiSIM - Hiroshima-university STARC IGFET Model
      
       Ver:    1.2.0
       Class:  M
       Level:  64
       Dir:    devices/hisim
       Status:

       This is the HiSIM model available from Hiroshima University
       (Ultra-Small Device Engineering Laboratory)

       Web site: http://home.hiroshima-u.ac.jp/usdl/HiSIM.html

       Enhancements over the original model:
       - Parallel Multiplier
       - NodesetFix


12. SOI devices

 12.1 BSIM3SOI_FD - SOI model (fully depleted devices)

      Ver:    2.1
      Class:  M
      Level:  55
      Dir:    devices/bsim3soi_fd
      Status: TO BE TESTED.

      FD model has been integrated.
      There is a bsim3soifd directory under the test
      hierarchy. Test circuits come from the bsim3soi

      Web site at: http://www-device.eecs.berkeley.edu/~bsimsoi
      
      *) rework-14: removed #ifndef NEWCONV code.


 12.2 BSIM3SOI_DD - SOI Model (dynamic depletion model)
 
      Ver:    2.1
      Class:  M
      Level:  56
      Dir:    devices/bsim3soi_dd
      Status: TO BE TESTED.

      There is a bsim3soidd directory under the
      test hierarchy. Test circuits come from bsim3soi

      Web site at: http://www-device.eecs.berkeley.edu/~bsimsoi

      *) rework-14: removed #ifndef NEWCONV code.


 12.3 BSIM3SOI_PD - SOI model (partially depleted devices)

      Ver:    2.2.1
      Class:  M
      Level:  57
      Dir:    devices/bsim3soi_pd
      Status: TO BE TESTED.

      PD model has been integrated. There is a bsim3soipd directory 
      under the test hierarchy. Test circuits come from the bsim3soi

      Web site at: http://www-device.eecs.berkeley.edu/~bsimsoi

      *) rework-14: removed #ifndef NEWCONV code.


 12.4 BSIM3SOI - SOI model (partially/full depleted devices)
               
      Ver:    4.0
      Class:  M
      Level:  58
      Dir:    devices/bsim3soi
      Status: TO BE TESTED.

      This is the newer version from Berkeley.
      Usable for partially/full depleted devices.

      Web site at: http://www-device.eecs.berkeley.edu/~bsimsoi


 12.5 SOI3 - STAG SOI3 Model
          
      Ver:    2.6
      Class:  M
      Level:  62
      Dir:    devices/soi3
      Status: OBSOLETE



13. Other devices

 13.1 EKV - EKV model
     
      Ver:    2.6
      Class:  M
      Level:  44
      Dir:    devices/ekv
      Status: TO BE TESTED

      Note: This model is not released in source code.
      You have to obtain the source code from the address below.

      Web site at: http://legwww.epfl.ch/ekv/