176 lines
2.8 KiB
Plaintext
176 lines
2.8 KiB
Plaintext
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* Example parameter test set
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.model hicumL2V2p40 npn level=8
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*
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*Transfer current
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+ c10 = 9.074e-030
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+ qp0 = 1.008e-013
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+ ich = 0
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+ hf0 = 40
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+ hfe = 10.01
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+ hfc = 20.04
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+ hjei = 3.382
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+ ahjei = 3
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+ rhjei = 2
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+ hjci = 0.2
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*
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*Base-Emitter diode currents
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+ ibeis = 1.328e-019
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+ mbei = 1.027
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+ ireis = 1.5e-015
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+ mrei = 2
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+ ibeps = 1.26e-019
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+ mbep = 1.042
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+ ireps = 1.8e-015
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+ mrep = 1.8
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+ mcf = 1
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*
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*Transit time for excess recombination current at b-c barrier
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+ tbhrec = 1e-010
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*
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*Base-Collector diode currents
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+ ibcis = 4.603e-017
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+ mbci = 1.15
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+ ibcxs = 0
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+ mbcx = 1
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*
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*Base-Emitter tunneling current
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+ ibets = 0.02035
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+ abet = 24
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+ tunode = 1
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*
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*Base-Collector avalanche current
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+ favl = 18.96
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+ qavl = 5.092e-014
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+ alfav = -0.0024
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+ alqav = -0.0006284
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+ kavl = 0.0
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+ alkav = 0.0
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*
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*Series resistances
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+ rbi0 = 4.444
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+ rbx = 2.568
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+ fgeo = 0.7409
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+ fdqr0 = 0
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+ fcrbi = 0
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+ fqi = 1
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+ re = 1.511
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+ rcx = 2.483
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*
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*Substrate transistor
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+ itss = 1.143e-017
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+ msf = 1.056
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+ iscs = 4.60106e-015
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+ msc = 1.018
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+ tsf = 0
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*
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*Intra-device substrate coupling
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+ rsu = 500
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+ csu = 6.4e-014
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*
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*Depletion Capacitances
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+ cjei0 = 8.869e-015
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+ vdei = 0.714
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+ zei = 0.2489
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+ ajei = 1.65
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+ cjep0 = 2.178e-015
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+ vdep = 0.8501
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+ zep = 0.2632
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+ ajep = 1.6
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+ cjci0 = 3.58e-015
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+ vdci = 0.8201
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+ zci = 0.2857
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+ vptci = 1.79
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+ cjcx0 = 6.299e-015
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+ vdcx = 0.8201
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+ zcx = 0.2863
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+ vptcx = 1.977
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+ fbcpar = 0.3
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+ fbepar = 1
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+ cjs0 = 2.6e-014
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+ vds = 0.9997
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+ zs = 0.4295
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+ vpts = 100
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+ cscp0 = 1.4e-014
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+ vdsp = 0
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+ zsp = 0.35
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+ vptsp = 4
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*
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*Diffusion Capacitances
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+ t0 = 2.089e-013
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+ dt0h = 8e-014
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+ tbvl = 8.25e-014
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+ tef0 = 3.271e-013
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+ gtfe = 3.548
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+ thcs = 5.001e-012
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+ ahc = 0.05
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+ fthc = 0.7
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+ rci0 = 9.523
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+ vlim = 0.6999
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+ vces = 0.01
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+ vpt = 2
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+ aick = 1e-3
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+ delck = 2
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+ tr = 0
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+ vcbar = 0.04
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+ icbar = 0.01
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+ acbar = 1.5
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*
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*Isolation Capacitances
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+ cbepar = 2.609e-014
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+ cbcpar = 1.64512e-014
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*
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*Non-quasi-static Effect
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+ flnqs = 0
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+ alqf = 0.166667
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+ alit = 0.333333
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*
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*Noise
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+ kf = .3e-16
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+ af = .75
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+ cfbe = -1
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+ flcono = 0
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+ kfre = 0.0
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+ afre = 2.0
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*
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*Lateral Geometry Scaling (at high current densities)
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+ latb = 0.0
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+ latl = 0.0
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*
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*Temperature dependence
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+ vgb = 0.91
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+ alt0 = 0.004
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+ kt0 = 6.588e-005
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+ zetaci = 0.58
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+ alvs = 0.001
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+ alces = -0.2286
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+ zetarbi = 0.3002
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+ zetarbx = 0.06011
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+ zetarcx = -0.02768
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+ zetare = -0.9605
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+ zetacx = 0
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+ vge = 1.17
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+ vgc = 1.17
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+ vgs = 1.049
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+ f1vg = -0.000102377
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+ f2vg = 0.00043215
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+ zetact = 5
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+ zetabet = 4.892
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+ alb = 0
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+ dvgbe = 0
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+ zetahjei = -0.5
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+ zetavgbe = 0.7
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*
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*Self-Heating
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+ flsh = 0
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+ rth = 1113.4
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+ cth = 6.841e-012
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+ zetarth = 0
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+ alrth = 0.002
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*
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*Compatibility with V2.1
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+ flcomp = 2.3
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*
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*Circuit simulator specific parameters
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+ tnom = 26.85
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*+ dt = 0
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