90 lines
1.5 KiB
Plaintext
90 lines
1.5 KiB
Plaintext
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i(XXX) test
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* Restrictions of function i(device):
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* O.K. when device and i(device) are at top level.
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* O.K. when device and i(device) are in the same
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* subcircuit at first subcircuit level.
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* O.K. when device and i(device) are in the same
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* subcircuit at some deeper subcircuit level.
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* source at top level, function i(XXX) at top level
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*o.k.
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R1 1 0 1
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V1 1 0 1
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R2 2 0 '5 * i(R1)'
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V2 2 0 1
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* source at top level, function i(XXX) at subckt level
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* geht nicht!
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*.subckt contr1 n1 n2
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*RS1 n1 n2 '6 * i(R1)'
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*.ends
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*XR1 3 0 contr1
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*V3 3 0 1
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* source at subckt level, function i(XXX) at same subckt
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* o.k.
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.subckt contr2 n1 n2
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RS1 n1 n2 '6 * i(RS2)'
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RS2 1 0 1
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V1 1 0 1
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.ends
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XR2 4 0 contr2
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V4 4 0 1
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* source at subckt level, function i(XXX) at same subckt level
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* but different subcircuit: should not do!
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* does not do!
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*.subckt contr3 n1 n2
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*RS1 n1 n2 '6 * i(RS2)'
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*.ends
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*XR3 5 0 contr3
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*V5 5 0 1
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* source at subckt level, function i(XXX) at top level
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* geht nicht!
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*.subckt contr4 n1 n2
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*RS41 n1 n2 7
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*VS41 n1 n2 1
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*.ends
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*XR4 6 0 contr4
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*R6 7 0 '10*i(r.xr4.rs41)'
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*V6 7 0 1
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* source at second subckt level, function i(XXX) at same subckt
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* o.k.
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.subckt contr5 n1 n2
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XR2 n1 n2 contr2
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.ends
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XR8 8 0 contr5
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V8 8 0 1
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* MOS device, first node only
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vd d 0 1
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vg g 0 1
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vb b 0 0
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vs s 0 0
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m1 d g s b n1 W=10u L=1u
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RM 10 0 '1E6 * i(M1)'
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VRM 10 0 1
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* reuse i(M1)
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BMM 11 0 V='1E6 * i(M1)'
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RMM 11 0 1
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.include modelcard.nmos
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.control
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op
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print i(V1) i(V2) i(V4) i(V8) i(VRM) i(BMM)
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.endc
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.end
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