Files
magic/extract
Tim Edwards 677cd8ab5e Implemented simple drain and source length calculations as device
parameters l1 and l2.  Provides a way to pass the source or drain
length as a parameter for, for example, an extended FET drain
implemented as a resistor abutting the FET gate.  Could potentially
be used as a way to determine source/drain area and perimeter
without resorting to measurements of a shared node.
2022-12-14 21:40:24 -05:00
..
2022-10-29 06:07:46 +02:00
2022-10-29 06:07:46 +02:00