23 lines
814 B
Plaintext
23 lines
814 B
Plaintext
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SCMOS rules for vertical NPN transistor has been revised from version
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6 to 7 due to the requirement to support ORBIT 1.2 micron process.
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If you use the "scmos" technology to load the cell "npn_array.mag",
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you'll find the following DRCs:
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N-well overlap of collector must be at least 3 (MOSIS rule #16.11)
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Pbase overlap of base contact must be at least 3 (MOSIS rule #16.5)
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The cell "npn_array.mag" is the actual test vehicle for the ORBIT
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2.0 micron process, so it should work OK if you target for that
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process. It is included here (without modification) to illustrate the
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difference between thees processes.
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All other cells have been modified according to the latest SCMOS DRC
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rules - revision 7. Please send attention e-mail to mosis@mosis.edu
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if you have any problem or comments...
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Jen-I pi@isi.edu ;-)
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