86 lines
4.2 KiB
Plaintext
86 lines
4.2 KiB
Plaintext
********************************************************************
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** Notes for the use of special Magic technology file "scmos-sub" **
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** for HP's CMOS26G process with lambda = 0.4 micron. **
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** for HP's CMOS14B process with lambda = 0.3 micron. **
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********************************************************************
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To submit a design in this technology, please specify "SCN3M_SUBM"
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in your technology field when triple metals are used in the design.
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If your design use only double metals, please use 'SCN_SUBM'.
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The following set of rules in conventional MOSIS SCMOS technology has
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been modified in order to better match HP's submicron CMOS processes,
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specifically, CMOS26G and CMOS14TB.
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======================================================================
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Description Rule # SCMOS SCMOS SCMOS_SUBM
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(Tight Metal) (submicron rules)
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======================================================================
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WELL_W 1.1 10 10 12 (4.8)
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WELL_S_DIFF 1.2 9 9 18 (7.2)
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WELL_O_ACT_XTOR 2.3 5 5 6 (2.4)
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WELL_S_ACT_XTOR 2.3 5 5 6 (2.4)
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POLY_S 3.2 2 2 3 (1.2)
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CON_S 5B.3,6B.3 2 2 3 (1.2)
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M1_W 7.1 3 3 3 (1.2)
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M1_S 7.2 3 2 3 (1.2)
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M2_W 9.1 3 3 3 (1.2)
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M2_S 9.2 4 3 3 (1.2)
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M3_W 15.1 6 6 5 (2.0)
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M3_S 15.2 4 4 3 (1.2)
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======================================================================
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The HP CMOS26G process is a derivative of the HP CMOS26B process with
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most of the rules intact except a 3.5 micron metal3 pitch (reduced
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from previous 5.0 micron pitch). Please refer to the on-line process
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specification file more detal -
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(ftp://ftp.mosis.edu:pub/mosis/vendors/hp-cmos26b-g/scn08-hp-specs.inf)
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The HP CMOS14TB process is a low-voltage (3.3Volt) CMOS one-poly,
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three-metal process with 0.6 micron minimum drawn channel length.
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Please refer to the on-line process specification file more detal -
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(ftp://ftp.mosis.edu:pub/mosis/vendors/hp-cmos14b/scn06_hp_specs.inf)
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A special Magic technology file is prepared for designs targeted
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for this process - "scmos-sub". The beta version of this technology
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file can be obtained on our anonymous FTP server ftp.mosis.edu
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(128.9.0.32) under pub/mosis/magic directory. Two files are there for
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your retrieval:
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(1) scmos-sub.tech
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(2) scmos-sub.tech26
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You'll have to install the second file (with C-style comments removed)
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in the usual Magic library directory to be able to use it.
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********************************************************************
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** TIPS for the transformation of traditional SCMOS layout to **
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** SCMOS-SUB layout **
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********************************************************************
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Most of the problems happens in the following cases:
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(1) Poly spacing is now 3 lambda instead of 2 lambda previously.
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You'll have to stretch the seriously-connected MOSFETs now.
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(2) contact spacing is now 3 instead of 2 previously. This should be
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taken care of automatically by the CIF output generator. but it
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now requires the designer to use special sized contacts
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(ndc,pdc,nsc,psc,pc) so that the resulting contacts will be on
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the grid. You should verify this by the use of ":cif see CCA"
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command.
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(3) Due to the 3 lambda spacing rule for contacts, previously abutted
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diffusion/substrate contacts now have to be separated by one
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lambda.
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I have the follwoing three files to illustrate the necessary changes
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as described above:
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(1) scmos-div4.mag : standard SCMOS divide-by-4 cell.
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(2) hp26g-div4-v1.mag : HP CMOS26G divide-by-4 cell with DRC
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violation of diffusion/substrate contact spacing rule.
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(3) hp26g-div4-v2.mag : correct CMOS26G divide-by-4 cell.
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they can be obtained at the same FTP site under pub/pi/layout/hp26g
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directory.
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