to be more robust and not depend on the ordering of the devices in
the techfile. The extraction method now keeps a mask of which
properties of the device (source/drain types, substrate type,
identifier type) have been found, and will look only for device
records that match what is known about the device. Added a device
identifier record which is the last record before parameters if the
record begins with "+". This allows marker layers to be placed
over a device such that it will extract with a different type.
This helps reduce the complexity of the techfile and allows
certain specialized devices like RF or ESD to be identified without
a separate layer type for the device.
extraction times, which is an incorrect units conversion of the
"step" parameter in the extract section. It was converting based
on the "lambda" parameter in the same section, which has to do with
the scaling of values in the output file, not the scale factor of
the database to be extracted, which is set by the current CIF output
scale. Once fixed, extraction times are minimized using the rule of
thumb mentioned in the techfile reference, which is 50 times the
minimum feature size. Also: Give the lengthy nature of extraction
on large designs no matter how well optimized, added a feature to
mark the progress of the extraction in increments of 5%. Does not
output progress for small cells that extract quickly.
added a long time ago, since capacitors use a different method for
calculating width and length than either transistors or resistors,
so subcircuits need a special class designator or else the extraction
may calculate the wrong dimensions for device width by totalling the
perimeter between the device and terminal types, as it would for a
MOSFET.
development had been halted since it was first created back in April.
Version 8.2 is now the official development version, with the first
development push to create a Cairo graphics interface.
Tim Edwards