"cif *hier write disable" and "cif *array write disable" commands
for a specific cell def and its descendents. The revision ensures
that all descendents apply the override. The "cif write" command
uses a stack instead of recursion, which makes it difficult to
apply the same method. Currently the method only works for the
"gds write" command, and implementing the feature for "cif write"
is deemed not worth the effort.
the "connected other node to. . ." message when terminals of a
device are shorted. A long enough node name, especially one
created by concatenating hierarchy when flattening a cell, can
easily overrun the short 256-byte string buffer. Fixed by
changing strcat() to strncat().
check was too aggressive and would delete coincident instances
based on cell def and bounding box only. If the cells were at
different orientation or mirrored, they would be incorrectly
flagged as coincident. Instances read from GDS could be
deleted due to this issue.
natural sort instead of ASCII-based sorting, so that ports that
are numbered arrays will be indexed properly by count. Also:
Modified the "extresist" handling of substrate to draw the default
substrate type over the entire cell area (less areas of nwell or
other conflicting type). This allows extresist to extract the
entire substrate as a resistive network. The result is ugly and
may warrant some aggressive network simplification, but it should
at least be realistic.
2-terminal devices without complaining. The previous handling
seemed to be technically correct other than spitting out warnings
about missing terminals.
that allocates and deallocates a single layer mask used by the
tech reader. Decided to work around the issue just by allocating
it only once and not releasing it---it's just a few bytes.
tech file "extract" section to work correctly when the offset is
negative. Generally, a negative offset is nonphysical and is just
curve-fitting round-off error, but the existing code was failing
to divide out the factor of 1000 that had been multiplied through
when reading the tech file, resulting in a very wrong offset.
when internal units no longer match lambda units. The text
would match the dimension of the cursor box, but the measurement
lines would be drawn assuming a lambda scale, not the internal
scale.
isolate the terminal areas of a device (e.g., source and drain)
and calculate their area and perimeter individually for the
device (in addition to the traditional method of calculating
area and perimeter of each resistance class for the entire node).
Also: Reworked the SPICE syntax output to generate SI values
in the range 1-1000 with the appropriate suffix (e.g., "20u")
instead of defaulting to "u" for lengths and "p" for areas.
This prevents it from producing weird units like "150000u" when
a process definition already includes a scalefactor.
Reworked the "extresist" code to use the device terminal area
and perimeter. This fixes an error in which "extresist" would
lose these values and "ext2spice" with option "extresist on"
would generate a new netlist output with zero terminal areas
and perimeters.
transistor records match between the ".ext" file and the ".res.ext"
file for the number of terminals per device. Previously, the first
device type for the layer type was always being used, and if it had
fewer terminals (e.g., a MOScap), then one terminal would go missing
in the output.
This is diagnostic only and does not change the read-in
behavior.
(2) ext2spice: Corrected an error that had been introduced
into version 8.3.171 that accidentally marks all devices
as visited which causes all source/drain areas and
perimeters to be output as zero.
(3) extract: Sweeping changes to handling of fringe
capacitance. Removed the (recently added) "fringeshieldhalo"
parameter from the tech file. Reworked the fringe
capacitance models based on results from the "capiche"
project (github/RTimothyEdwards/capiche). Fringe shielding
is now done by clipping fringe at the boundary of a
shielding shape, rather than trying to calculate the
amount of shielding (as the "capiche" project proved this
to be equivalent). Values for partial fringing are modeled
by atan(x), which like the sidewall (1/x) curve, extends to
infinity and values are limited by the halo but do not
otherwise depend on the halo. Because of this, the halo can
be made variable and controlled by the user for deciding on
the tradeoff between accuracy and run time. A new command
option "extract halo" was added to allow this control over
the halo distance.
"gds polygon subcells true" the same as "gds polygon subcells
temporary" instead of "gds polygon subcells keep". This works
well for gf180mcu in open_pdks to keep the existing behavior
but won't break the GDS input on an older version of magic.
three types: "none", "temporary", and "keep" (instead of "true"
or "false"). "none" now reverts back to the original behavior,
because it was found that saving polygons in subcells prevents
them from participating in boolean operations. The "keep"
option is the original option (polygons kept in subcells), and
"temporary" is the one recently introduced (which puts polygons
in subcells and then flattens them). This restores the original
method while retaining the recently implemented method. However,
a proper solution needs to be found that deals with the problem
of boolean operators.
213 from Anton Blanchard (1. Don't cast pointer to struct and back
again in DBDiagonalProc(), 2. Fix compiler warning in
drcMaskSpacing(), 3. Fix a few issues in leaDBSearchForTech(),
4. Remove spurious ";" from PlotPS()).
of a label from the command line. Also fixed a long-standing
irritation that "setlabel" would change the properties of a label
in the edit cell but not in the selection itself, which would
cause the label to be drawn both with the original properties
in the selection and the new properties in the edit cell. Now
both views will track the same changes.
natural flattening from a selection. That is, instead of
specifying "flatten -doinplace <cell>", you can select some
number of instances and just do "flatten -doinplace".
tech file to correct the underlying problem with the SkyWater
sky130 process in which a different layer/purpose pair is used
for TEXTTYPE and DATATYPE for the same layer. Previously, all
output from magic writes the same pair for both when writing a
port label. The new method preserves existing syntax, although
there are some differences based on what order the "port"
statement appears relative to other types for the same layer.
flattening, since the appearance of the layout will change even
though there are no physical changes. Finally got around to
debugging and correcting the input mask-hints, which can
preserve vendor GDS by marking areas where the vendor GDS differs
from magic's automatically generated output (the method was
almost correct and only needed an input scale factor change).
commit to prevent port labels from being copied up from the
flattened cell into the parent, and prefixing the instance
name to text in the instance top level so that there will be
no port or label collisions in the parent cell after flattening
the child cell in place. Also: Changed "extract dolabelcheck"
to be the default setting.
that the feature for implementing callbacks on a selection list
was already implemented via the add_dependency procedure.
Modified the GDS read to remove cell instances that are placed
directly on top of one another in the same cell. Modified the
GDS read to make a better selection of a default font size for
text that specifies a font but not a size, using the minimum
width for the layer the text is placed on. Modified the GDS
read to remove text with empty-string placeholders (created when
a pin layer is read but no text exists to go along with it, due
to GDS not having a specific way to make pins, such that pins
have to be split between one record for geometry and another
for text).
parameters l1 and l2. Provides a way to pass the source or drain
length as a parameter for, for example, an extended FET drain
implemented as a resistor abutting the FET gate. Could potentially
be used as a way to determine source/drain area and perimeter
without resorting to measurements of a shared node.
optional argument that is a callback function, so that the act
of selecting something from the drop-down menu can cause things
to happen such as changing the GUI window contents for the item
selected.
should have been done a long time ago! Allows an instance to be
flattened in place inside a cell def, which otherwise requires
a complicated set of commands to do. Also: Modified the polygon
handling routine from the previous commit so that it correctly
removes the polygon cell defs after flattening them into the
parent cell.
can be much, much faster than reading in polygons directly into a
cell from GDS. Modified the handling of polygons so that they are
*always* read into subcells. If the "polygon subcell flatten true"
option is not enabled, then the subcells are flattened at the end
of reading the cell, and the polygon cells are deleted. This method
avoids most of the cases in which "polygon subcell flatten true"
has ever needed to be set.
use of a resistor type as a FET extended drain, allowing the
FET drain node to short across to the other side of the resistor
so that the resistor is absorbed into the FET device. Used with
the GF180MCU process to describe the salicide-block ESD FET types.
for compatible layout over the area of the pin rectangle in the
entire hierarchy of the cell, not just in the top level. This
corrects issues where pins are placed in the top level cell with
no metal underneath. It is written in such a way that it will
work regardless of whether paint is split across the hierarchy,
or the label spans different types (such as crossing a contact).
in the input. The name of one was being modified but was being
right-justified into the string, resulting in a name starting with
many space characters. Also: Fixed an issue with extresist where
a label that ends up with an empty string can become a node with
an empty string name in the .res.ext file output.
number of terminals for devices that don't have the usual gate/
source/drain terminals (e.g., diodes, resistors, capacitors) when
writing the devices with re-mapped terminals into the .res.ext
file. Also: Changed the size of the word containing the name
refcount for "equiv" statements, since an accidental shorting
of pins can cause a large number of "equiv" statements in a .ext
file, causing an overrun of the previously 1-byte refcount (this
probably does not make the structure any longer, since it likely
has to fit to a word boundary).
Tim Edwards
Anton Blanchard
Alessandro De Laurenzis