The '&' has higher precedence, so the expression of the '&' side receive
extra parentheses.
ResMakeRes.c:671:37: warning: suggest parentheses around '&&' within '||'
ResMakeRes.c:942:32: warning: suggest parentheses around '&&' within '||'
ResSimple.c:201:70: warning: suggest parentheses around '&&' within '||'
ResRex.c:1036:28: warning: suggest parentheses around '&&' within '||'
ResRex.c:1038:50: warning: suggest parentheses around '&&' within '||'
ext2sim.c:1341:47: warning: suggest parentheses around '&&' within '||'
ext2spice.c:172:44: warning: suggest parentheses around '&&' within '||'
ext2spice.c:173:49: warning: suggest parentheses around '&&' within '||'
ext2spice.c:3655:50: warning: suggest parentheses around '&&' within '||'
ext2hier.c:1412:50: warning: suggest parentheses around '&&' within '||'
gcrDebug.c:638:55: warning: suggest parentheses around '&&' within '||'
selEnum.c:323:28: warning: suggest parentheses around '&&' within '||'
GCC14 -Wall cleanup series [-Wparentheses]
different way. Added a routine to remove all layers of a contact
from all planes except the contact's base plane before finding
and processing contacts. This causes ExtFindRegions() to find
and process only one tile on one plane per contact, so there are
no redundant contact entries. Also, any overlapping stacked
contacts are resolved, which avoids the very common error of
contacts not being processed at the correct size because they
are being processed per tile for chopped-up areas.
was made to limit the ExtFindRegions() search to one plane per
contact. Fixed this simply by doubling the resistance per via
so that the final result is correct.
cuts per contact area during parasitic resistance extraction.
Previously, the result was divided by the via pitch twice,
resulting in most contact areas being reported as a single
cut.
can result in negative resistors due to integer overflow. In all
cases, the target was floating-point and it was only necessary to
recast everything to float first.
This commit makes the code (mostly) C99-compatible, enabling to compile
it without the -Wno-error=implicit-function-declaration flag. This
way, Magic becomes usable on arm64 architectures, specifically on Apple
computers with M1/M2 SoC.
text formatting. Made one critical correction to ResGetDevice() to
pass the device type; otherwise, devices on different planes (e.g.,
MiM caps) with the same coordinate will always return the device on
the lowest plane, leading to incorrect results and an eventual crash
when the device record is free'd twice.
support of devices with terminals on different plances, such as
capacitors, diodes, and bipolar transistors. Output now appears
to give meaningful results for flattened layouts, although
numerous issues remain for hierarchical layouts.
simple FET device in extresist. Also: Extended the bloat-all CIF operator
again, allowing the trigger layer for the bloat operation to include both
CIF layers and magic layers (previously only magic layers were supported).
This extension is possible due to the previous extension allowing the
trigger layer and bloating layers to be on separate planes. This operator
extension is useful for tagging geometry that is in the proximity of, but
not overlapping, geometry on another plane.
hierarchical cells (namely a scaling issue with .sim file units).
More can be done to make the extresist command more user friendly,
but at least port connections as drivers appears to work.
Darryl L. Miles
Tim Edwards
Alessandro De Laurenzis