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Separated drain and source records for the esFetInfo array, to

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support asymmetric FETs and other devices like bipolars that have
three distinct terminals.  This does not go as far as it should to
make the array independent of the number of declared terminals of
the device.  However, it suffices to make, e.g., parameter "a2=area"
work for a bipolar device, and to generate the right drain and source
areas and perimeters for asymmetric (e.g., extended-drain) devices.
This commit is contained in:
Tim Edwards
2020-09-11 17:29:12 -04:00
parent ebe12fecfe
commit 32ec962535
7 changed files with 130 additions and 75 deletions
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extract/ExtBasic.c
+1 -1
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@@ -1743,7 +1743,7 @@ extOutputDevices(def, transList, outFile)
break;
}
extTransRec.tr_devmatch |= (MATCH_TERM << termcount);
extTransRec.tr_termnode[termcount++] = node;
extTransRec.tr_termnode[termcount] = node;
}
else if (TTMaskHasType(tmask, TT_SPACE)) {
/* Device node is specified as being the substrate */