magic/doc/man/sim.5

.\" sccsid @(#)sim.5	4.1 MAGIC (Berkeley) 11/29/85
.\"
.\" CONVENTIONS:
.\"	italics:  things that are substituted for
.\"	boldface: characters that are typed as-is
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.\"	EXAMPLE:  \fIfilename\fB.mag\fR
.\"	     or:  \fBcif \fR[\fIfile\fR]
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.TH SIM 5
.UC 4
.SH NAME
sim \- format of .sim files read by esim, crystal, etc.

.SH DESCRIPTION
The simulation tools \fIcrystal\fP\|(1) and \fIesim\fP\|(1) accept
a circuit description in \fB.sim\fP format.
There is a single \fB.sim\fP file for the entire circuit, unlike
Magic's \fIext\fP\|(5) format in which there is a \fB.ext\fP file
for every cell in a hierarchical design.
.LP
A \fB.sim\fP file consists of a series of lines, each of which begins
with a key letter.
The key letter beginning a line determines how the remainder
of the line is interpreted.
The following are the list of key letters understood.
.TP
.B "|\ units: \fIs\fB  tech: \fItech\fR format: \fIMIT|LBL|SU\fR"
If present, this must be the first line in the \fB.sim\fP file.
It identifies the technology of this circuit as \fItech\fP and
gives a scale factor for units of linear dimension as \fIs\fP.
All linear dimensions appearing in the \fB.sim\fP file are
multiplied by \fIs\fP to give centimicrons. The format field
signifies the sim variant. MIT and SU are compatible and understood
by all tools. LBL is understood only by gemini(1).
.TP
.I "type  g  s  d  l  w  x  y  \fBg=\fIgattrs  \fBs=\fIsattrs  \fBd=\fIdattrs"
Defines a transistor of type \fItype\fP.
Currently, \fItype\fP may be
\fBe\fP or \fBd\fP for NMOS, or \fBp\fP or \fBn\fP for CMOS.
The name of the node to which the gate, source, and drain of the
transistor are connected are given by \fIg\fP, \fIs\fP, and \fId\fP
respectively.
The length and width of the transistor are \fIl\fP and \fIw\fP.
The next two tokens, \fIx\fP and \fIy\fP, are optional.
If present,
they give the location of a point inside the gate region of the transistor.
The last three tokens are the attribute lists for the transistor
gate, source, and drain.
If no attributes are present for a particular
terminal, the corresponding attribute list may be absent (i.e, there
may be no \fBg=\fP field at all).
The attribute lists \fIgattrs\fP, etc. are comma-separated lists of
labels.
The label names should not include any spaces, although some
tools can accept label names with spaces if they are enclosed
in double quotes.
.B "In version 6.4.5 and later"
the default format produced by ext2sim is SU. In this format the attribute
of the gate starting with S_ is the substrate node of the fet. The attributes
of the gate, and source and substrate starting with A_, P_ are the area and
perimeter (summed for that node only once) of the source and drain respectively.
This addition to the format is backwards compatible.
.TP
.B "C \fIn1 n2 cap\fR"
Defines a capacitor between nodes \fIn1\fP and \fIn2\fP.
The value of the capacitor is \fIcap\fP femtofarads.
\fBNOTE:\fR
since many analysis tools compute transistor gate capacitance themselves
from the transistor's area and perimeter,
the capacitance between a node and substrate (GND!) normally
does not include the capacitance from transistor gates connected
to that node.
If the \fB.sim\fR file was produced by \fIext2sim\fR\|(1), check
the technology file that was used to produce the original \fB.ext\fR
files to see whether transistor gate capacitance is included or
excluded;
see ``Magic Maintainer's Manual #2: The Technology File'' for details.
.TP
.B "R \fInode res\fR"
Defines the lumped resistance of node \fInode\fP to be \fIres\fP ohms.
This construct is only interpreted by a few programs.
.TP
.B "r \fInode1 node2 res\fR"
Defines an explicit resistor between nodes \fInode1\fP and
\fInode2\fR of resistance \fIres\fP ohms.
This construct is only interpreted by a few programs.
.TP
.B "N \fInode darea dperim parea pperim marea mperim"
As an alternative to computed capacitances, some tools expect
the total perimeter and area of the polysilicon, diffusion, and
metal in each node to be reported in the \fB.sim\fP file.
The \fBN\fP construct associates diffusion area \fIdarea\fP
(in square centimicrons) and diffusion perimeter \fIdperim\fP (in centimicrons)
with node \fInode\fP, polysilicon area \fIparea\fP and perimeter
\fIpperim\fP, and metal area \fImarea\fP and perimeter \fImperim\fP.
.I "This construct is technology dependent and obsolete."
.TP
.B "A \fInode attr\fR"
Associates attribute \fIattr\fP for node \fInode\fP.
The string
\fIattr\fP should contain no blanks.
.TP
.B "= \fInode1 node2\fR"
Each node in a \fB.sim\fP file is named implicitly by having it appear in
a transistor definition.
All node names appearing in a \fB.sim\fP file
are assumed to be distinct.
Some tools, such as \fIesim\fP\|(1), recognize aliases for node names.
The \fB=\fR construct allows the name \fInode2\fP to be
defined as an alias for the name \fInode1\fP.
Aliases defined
by means of this construct may not appear anywhere else in the \fB.sim\fP file.

.SH "SEE ALSO"
crystal\|(1), esim\|(1), ext2sim\|(1), sim2spice\|(1), ext\|(5)