klayout/testdata/lvs/soft_connect2.l2n

#%l2n-klayout
W(TOP)
U(0.001)
L(l3 '1/0')
L(l4 '3/0')
L(l15 '3/1')
L(l8 '4/0')
L(l11 '5/0')
L(l12 '6/0')
L(l16 '6/1')
L(l13 '7/0')
L(l14 '8/0')
L(l17 '8/1')
L(l7)
L(l10)
L(l2)
L(l9)
L(l6)
C(l3 l3 l10)
C(l4 l4 l15 l11)
C(l15 l4 l15)
C(l8 l8 l12 l10 l2 l9 l6)
CS(l8 l10 l2 l9 l6)
C(l11 l4 l11 l12)
CS(l11 l4)
C(l12 l8 l11 l12 l16 l13)
C(l16 l12 l16)
C(l13 l12 l13 l14)
C(l14 l13 l14 l17)
C(l17 l14 l17)
C(l7 l7)
C(l10 l3 l8 l10)
CS(l10 l3)
C(l2 l8 l2)
C(l9 l8 l9)
C(l6 l8 l6)
G(l7 SUBSTRATE)
G(l9 SUBSTRATE)
GS(l9 SUBSTRATE)
K(PMOS MOS4)
K(NMOS MOS4)
D(D$PMOS PMOS
 T(S
  R(l2 (-900 -475) (775 950))
 )
 T(G
  R(l4 (-125 -475) (250 950))
 )
 T(D
  R(l2 (125 -475) (775 950))
 )
 T(B
  R(l3 (-125 -475) (250 950))
 )
)
D(D$NMOS NMOS
 T(S
  R(l6 (-900 -475) (775 950))
 )
 T(G
  R(l4 (-125 -475) (250 950))
 )
 T(D
  R(l6 (125 -475) (775 950))
 )
 T(B
  R(l7 (-125 -475) (250 950))
 )
)
X(INV
 R((-1500 -800) (3000 4600))
 N(1
  R(l8 (290 -310) (220 220))
  R(l8 (-220 180) (220 220))
  R(l12 (-290 -690) (360 760))
  R(l13 (-305 -705) (250 250))
  R(l13 (-250 150) (250 250))
  R(l14 (-2025 -775) (3000 900))
  R(l6 (-1375 -925) (775 950))
 )
 N(2
  R(l8 (290 2490) (220 220))
  R(l8 (-220 180) (220 220))
  R(l12 (-290 -690) (360 760))
  R(l13 (-305 -705) (250 250))
  R(l13 (-250 150) (250 250))
  R(l14 (-2025 -775) (3000 900))
  R(l2 (-1375 -925) (775 950))
 )
 N(3
  R(l3 (-1500 1800) (3000 2000))
 )
 N(4
  R(l4 (-125 -250) (250 2500))
  R(l4 (-250 -3050) (250 1600))
  R(l4 (-250 1200) (250 1600))
 )
 N(5
  R(l8 (-510 -310) (220 220))
  R(l8 (-220 180) (220 220))
  R(l8 (-220 2180) (220 220))
  R(l8 (-220 180) (220 220))
  R(l12 (-290 -3530) (360 2840))
  R(l12 (-360 -2800) (360 760))
  R(l12 (-360 2040) (360 760))
  R(l2 (-680 -855) (775 950))
  R(l6 (-775 -3750) (775 950))
 )
 N(6 I(SUBSTRATE))
 P(1)
 P(2)
 P(3)
 P(4)
 P(5)
 P(6 I(SUBSTRATE))
 D(1 D$PMOS
  Y(0 2800)
  E(L 0.25)
  E(W 0.95)
  E(AS 0.73625)
  E(AD 0.73625)
  E(PS 3.45)
  E(PD 3.45)
  T(S 5)
  T(G 4)
  T(D 2)
  T(B 3)
 )
 D(2 D$NMOS
  Y(0 0)
  E(L 0.25)
  E(W 0.95)
  E(AS 0.73625)
  E(AD 0.73625)
  E(PS 3.45)
  E(PD 3.45)
  T(S 5)
  T(G 4)
  T(D 1)
  T(B 6)
 )
)
X(TOP
 R((600 800) (8880 4600))
 N(1
  R(l4 (2920 2600) (2880 400))
  R(l11 (-300 -300) (200 200))
  R(l12 (-300 -300) (690 400))
 )
 N(2 I(A)
  R(l4 (6600 2600) (2880 400))
  R(l15 (-2380 -200) (0 0))
 )
 N(3 I(Q)
  R(l12 (1810 2600) (690 400))
  R(l16 (-400 -200) (0 0))
 )
 N(4 I(VDD)
  R(l3 (4000 3400) (1600 2000))
  R(l3 (-5000 -2000) (1000 2000))
  R(l3 (6400 -2000) (1000 2000))
  R(l8 (-8000 -900) (200 200))
  R(l8 (-200 -600) (200 200))
  R(l8 (7200 200) (200 200))
  R(l8 (-200 -600) (200 200))
  R(l12 (-7900 -350) (800 900))
  R(l12 (6600 -900) (800 900))
  R(l13 (-7900 -350) (200 200))
  R(l13 (-200 -600) (200 200))
  R(l13 (7200 200) (200 200))
  R(l13 (-200 -600) (200 200))
  R(l14 (-4400 -350) (1200 900))
  R(l14 (-4800 -900) (1000 900))
  R(l14 (6400 -900) (1000 900))
  R(l17 (-4800 -450) (0 0))
 )
 N(5 I('SUBSTRATE,VSS')
  R(l8 (1000 1700) (200 200))
  R(l8 (-200 -600) (200 200))
  R(l8 (7200 200) (200 200))
  R(l8 (-200 -600) (200 200))
  R(l12 (-7900 -350) (800 900))
  R(l12 (6600 -900) (800 900))
  R(l13 (-7900 -350) (200 200))
  R(l13 (-200 -600) (200 200))
  R(l13 (7200 200) (200 200))
  R(l13 (-200 -600) (200 200))
  R(l14 (-4400 -350) (1200 900))
  R(l14 (-4800 -900) (1000 900))
  R(l14 (6400 -900) (1000 900))
  R(l17 (-4800 -550) (0 0))
 )
 P(2 I(A))
 P(3 I(Q))
 P(4 I(VDD))
 P(5 I('SUBSTRATE,VSS'))
 X(1 INV Y(3000 1600)
  P(0 5)
  P(1 4)
  P(2 4)
  P(3 1)
  P(4 3)
  P(5 5)
 )
 X(2 INV Y(6600 1600)
  P(0 5)
  P(1 4)
  P(2 4)
  P(3 2)
  P(4 1)
  P(5 5)
 )
)