klayout/testdata/lvs/inv2.lvsdb

206 lines
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#%lvsdb-klayout
J(
W(INVERTER_WITH_DIODES)
U(0.001)
L(l3 'NWELL (1/0)')
L(l4 'POLY (5/0)')
L(l8 'CONTACT (6/0)')
L(l11 'METAL1 (7/0)')
L(l12 'METAL1_LABEL (7/1)')
L(l13 'VIA1 (8/0)')
L(l14 'METAL2 (9/0)')
L(l15 'METAL2_LABEL (9/1)')
L(l7)
L(l2)
L(l9)
L(l6)
L(l10)
C(l3 l3 l9)
C(l4 l4 l8)
C(l8 l4 l8 l11 l2 l9 l6 l10)
C(l11 l8 l11 l12 l13)
C(l12 l11)
C(l13 l11 l13 l14)
C(l14 l13 l14 l15)
C(l15 l14)
C(l7 l7)
C(l2 l8 l2)
C(l9 l3 l8 l9)
C(l6 l8 l6)
C(l10 l8 l10)
G(l7 SUBSTRATE)
G(l10 SUBSTRATE)
K(PMOS MOS4)
K(NMOS MOS4)
D(D$PMOS PMOS
T(S
R(l2 (-575 -750) (450 1500))
)
T(G
R(l4 (-125 -750) (250 1500))
)
T(D
R(l2 (125 -750) (450 1500))
)
T(B
R(l3 (-125 -750) (250 1500))
)
)
D(D$NMOS NMOS
T(S
R(l6 (-575 -450) (450 900))
)
T(G
R(l4 (-125 -450) (250 900))
)
T(D
R(l6 (125 -450) (450 900))
)
T(B
R(l7 (-125 -450) (250 900))
)
)
X(INVERTER_WITH_DIODES
R((0 0) (3000 6150))
N(1 I(IN)
R(l4 (900 50) (250 1050))
R(l4 (-250 0) (250 3100))
R(l4 (-250 0) (250 1650))
R(l4 (-800 -3100) (550 400))
R(l8 (-450 -300) (200 200))
R(l11 (-300 -300) (400 400))
J(l12 IN (-200 -200))
)
N(2 I(VDD)
R(l3 (0 2950) (3000 3200))
R(l8 (-2450 -1800) (200 200))
R(l8 (-200 300) (200 200))
R(l8 (-200 300) (200 200))
R(l8 (1400 -800) (200 200))
R(l8 (-200 300) (200 200))
R(l11 (-1850 -1200) (300 1600))
R(l11 (1300 -1200) (300 1200))
R(l13 (-1850 -800) (200 200))
R(l13 (-200 300) (200 200))
R(l13 (1400 -700) (200 200))
R(l13 (-200 300) (200 200))
R(l14 (-2350 -850) (3000 1000))
J(l15 VDD (-150 -850))
R(l2 (-2400 -850) (450 1500))
R(l9 (1050 -1200) (600 1200))
)
N(3 I(OUT)
R(l8 (1300 4350) (200 200))
R(l8 (-200 300) (200 200))
R(l8 (-200 300) (200 200))
R(l8 (-200 -5250) (200 200))
R(l8 (-200 300) (200 200))
R(l11 (-250 3250) (300 1400))
R(l11 (-300 -4600) (300 3200))
R(l11 (-300 -2900) (450 400))
R(l11 (-450 -1550) (300 850))
J(l12 OUT (-50 500))
R(l2 (-350 2650) (450 1500))
R(l6 (-450 -5500) (450 900))
)
N(4 I(VSS)
R(l8 (550 300) (200 200))
R(l8 (-200 300) (200 200))
R(l8 (1400 -550) (200 200))
R(l8 (-200 300) (200 200))
R(l11 (-1850 -1100) (300 1050))
R(l11 (1300 -1050) (300 1200))
R(l13 (-1850 -1100) (200 200))
R(l13 (-200 300) (200 200))
R(l13 (1400 -700) (200 200))
R(l13 (-200 300) (200 200))
R(l14 (-2350 -850) (3000 1000))
J(l15 VSS (-150 -850))
R(l6 (-2400 50) (450 900))
R(l10 (1050 -900) (600 1200))
)
D(1 D$PMOS
Y(1025 4950)
E(L 0.25)
E(W 1.5)
E(AS 0.675)
E(AD 0.675)
E(PS 3.9)
E(PD 3.9)
T(S 2)
T(G 1)
T(D 3)
T(B 2)
)
D(2 D$NMOS
Y(1025 650)
E(L 0.25)
E(W 0.9)
E(AS 0.405)
E(AD 0.405)
E(PS 2.7)
E(PD 2.7)
T(S 4)
T(G 1)
T(D 3)
T(B 4)
)
)
)
H(
K(PMOS MOS4)
K(NMOS MOS4)
X(INVERTER_WITH_DIODES
N(1 I(VSS))
N(2 I(IN))
N(3 I(OUT))
N(4 I(VDD))
P(1 I(VSS))
P(2 I(IN))
P(3 I(OUT))
P(4 I(VDD))
D(1 PMOS
I(P)
E(L 0.25)
E(W 1.5)
E(AS 0)
E(AD 0)
E(PS 0)
E(PD 0)
T(S 3)
T(G 2)
T(D 4)
T(B 4)
)
D(2 NMOS
I(N)
E(L 0.25)
E(W 0.9)
E(AS 0)
E(AD 0)
E(PS 0)
E(PD 0)
T(S 1)
T(G 2)
T(D 3)
T(B 1)
)
)
)
Z(
X(INVERTER_WITH_DIODES INVERTER_WITH_DIODES 1
Z(
N(1 2 1)
N(3 3 1)
N(2 4 1)
N(4 1 1)
P(() 1 1)
P(() 2 1)
P(() 3 1)
P(() 0 1)
D(2 2 1)
D(1 1 1)
)
)
)