mirror of https://github.com/KLayout/klayout.git
WIP: specific device extractor and GSI binding.
This commit is contained in:
Matthias Koefferlein
parent
ec7ab8e01d
commit
b512f628bc
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@ -150,7 +150,8 @@ SOURCES = \
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dbNetlistExtractor.cc \
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gsiDeclDbNetlistDeviceClasses.cc \
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gsiDeclDbNetlistDeviceExtractor.cc \
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gsiDeclDbHierNetworkProcessor.cc
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gsiDeclDbHierNetworkProcessor.cc \
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dbNetlistDeviceExtractorClasses.cc
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HEADERS = \
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dbArray.h \
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@ -264,7 +265,8 @@ HEADERS = \
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dbNetlist.h \
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dbNetlistDeviceClasses.h \
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dbNetlistDeviceExtractor.h \
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dbNetlistExtractor.h
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dbNetlistExtractor.h \
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dbNetlistDeviceExtractorClasses.h
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!equals(HAVE_QT, "0") {
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@ -0,0 +1,128 @@
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/*
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KLayout Layout Viewer
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Copyright (C) 2006-2018 Matthias Koefferlein
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This program is free software; you can redistribute it and/or modify
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it under the terms of the GNU General Public License as published by
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the Free Software Foundation; either version 2 of the License, or
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(at your option) any later version.
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This program is distributed in the hope that it will be useful,
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but WITHOUT ANY WARRANTY; without even the implied warranty of
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MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. See the
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GNU General Public License for more details.
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You should have received a copy of the GNU General Public License
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along with this program; if not, write to the Free Software
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Foundation, Inc., 51 Franklin St, Fifth Floor, Boston, MA 02110-1301 USA
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*/
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#include "dbNetlistDeviceExtractorClasses.h"
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#include "dbNetlistDeviceClasses.h"
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// ---------------------------------------------------------------------------------
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// NetlistDeviceExtractorMOS3Transistor implementation
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namespace db
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{
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NetlistDeviceExtractorMOS3Transistor::NetlistDeviceExtractorMOS3Transistor (const std::string &name)
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: db::NetlistDeviceExtractor (name)
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{
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// .. nothing yet ..
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}
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void NetlistDeviceExtractorMOS3Transistor::setup ()
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{
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define_layer ("SD", "Source/drain diffusion");
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define_layer ("G", "Gate");
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define_layer ("P", "Poly");
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register_device_class (new db::DeviceClassMOS3Transistor ());
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}
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db::Connectivity NetlistDeviceExtractorMOS3Transistor::get_connectivity (const db::Layout & /*layout*/, const std::vector<unsigned int> &layers) const
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{
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tl_assert (layers.size () == 3);
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unsigned int diff = layers [0];
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unsigned int gate = layers [1];
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// not used for device recognition: poly (2), but used for producing the gate terminals
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// The layer definition is diff, gate
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db::Connectivity conn;
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// collect all connected diffusion shapes
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conn.connect (diff, diff);
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// collect all connected gate shapes
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conn.connect (gate, gate);
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// connect gate with diff to detect gate/diffusion boundary
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conn.connect (diff, gate);
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return conn;
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}
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void NetlistDeviceExtractorMOS3Transistor::extract_devices (const std::vector<db::Region> &layer_geometry)
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{
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const db::Region &rdiff = layer_geometry [0];
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const db::Region &rgates = layer_geometry [1];
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for (db::Region::const_iterator p = rgates.begin_merged (); !p.at_end (); ++p) {
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db::Region rgate (*p);
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db::Region rdiff2gate = rdiff.selected_interacting (rgate);
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if (rdiff2gate.empty ()) {
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error (tl::to_string (tr ("Gate shape touches no diffusion - ignored")), *p);
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} else {
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unsigned int terminal_geometry_index = 0;
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unsigned int gate_geometry_index = 2;
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if (rdiff2gate.size () != 2) {
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error (tl::sprintf (tl::to_string (tr ("Expected two polygons on diff interacting one gate shape (found %d) - gate shape ignored")), int (rdiff2gate.size ())), *p);
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continue;
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}
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db::Edges edges (rgate.edges () & rdiff2gate.edges ());
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if (edges.size () != 2) {
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error (tl::sprintf (tl::to_string (tr ("Expected two edges interacting gate/diff (found %d) - width and length may be incorrect")), int (edges.size ())), *p);
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continue;
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}
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if (! p->is_box ()) {
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error (tl::to_string (tr ("Gate shape is not a box - width and length may be incorrect")), *p);
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}
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db::Device *device = create_device ();
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device->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_W, dbu () * edges.length () * 0.5);
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device->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_L, dbu () * (p->perimeter () - edges.length ()) * 0.5);
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int diff_index = 0;
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for (db::Region::const_iterator d = rdiff2gate.begin (); !d.at_end () && diff_index < 2; ++d, ++diff_index) {
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// count the number of gate shapes attached to this shape and distribute the area of the
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// diffusion region to the number of gates
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int n = rgates.selected_interacting (db::Region (*d)).size ();
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tl_assert (n > 0);
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device->set_parameter_value (diff_index == 0 ? db::DeviceClassMOS3Transistor::param_id_AS : db::DeviceClassMOS3Transistor::param_id_AD, dbu () * dbu () * d->area () / double (n));
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define_terminal (device, diff_index == 0 ? db::DeviceClassMOS3Transistor::terminal_id_S : db::DeviceClassMOS3Transistor::terminal_id_D, terminal_geometry_index, *d);
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}
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define_terminal (device, db::DeviceClassMOS3Transistor::terminal_id_G, gate_geometry_index, *p);
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// output the device for debugging
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device_out (device, rdiff2gate, rgate);
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}
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}
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}
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}
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@ -0,0 +1,81 @@
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/*
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KLayout Layout Viewer
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Copyright (C) 2006-2018 Matthias Koefferlein
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This program is free software; you can redistribute it and/or modify
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it under the terms of the GNU General Public License as published by
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the Free Software Foundation; either version 2 of the License, or
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(at your option) any later version.
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This program is distributed in the hope that it will be useful,
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but WITHOUT ANY WARRANTY; without even the implied warranty of
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MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. See the
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GNU General Public License for more details.
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You should have received a copy of the GNU General Public License
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along with this program; if not, write to the Free Software
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Foundation, Inc., 51 Franklin St, Fifth Floor, Boston, MA 02110-1301 USA
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*/
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#ifndef _HDR_dbNetlistDeviceExtractorClasses
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#define _HDR_dbNetlistDeviceExtractorClasses
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#include "dbNetlistDeviceExtractor.h"
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namespace db
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{
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/**
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* @brief A device extractor for a three-terminal MOS transistor
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*
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* This class supplies the generic extractor for a MOS device.
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* The device is defined by two basic input layers: the diffusion area
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* (source and drain) and the gate area. It requires a third layer
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* (poly) to put the gate terminals on. The separation between poly
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* and allows separating the device recognition layer (gate) from the
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* conductive layer.
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*
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* The device class produced by this extractor is DeviceClassMOS3Transistor.
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* The extractor extracts the four parameters of this class: L, W, AS and AD.
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*
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* The diffusion area is distributed on the number of gates connecting to
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* the particular source or drain area.
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*/
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class DB_PUBLIC NetlistDeviceExtractorMOS3Transistor
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: public db::NetlistDeviceExtractor
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{
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public:
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NetlistDeviceExtractorMOS3Transistor (const std::string &name);
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virtual void setup ();
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virtual db::Connectivity get_connectivity (const db::Layout &layout, const std::vector<unsigned int> &layers) const;
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virtual void extract_devices (const std::vector<db::Region> &layer_geometry);
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protected:
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/**
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* @brief A cappback when the device is produced
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* This callback is provided as a debugging port
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*/
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virtual void device_out (const db::Device * /*device*/, const db::Region & /*diff*/, const db::Region & /*gate*/)
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{
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// .. no specific implementation ..
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}
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};
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}
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namespace tl
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{
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template<> struct tl::type_traits<db::NetlistDeviceExtractorMOS3Transistor> : public tl::type_traits<void>
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{
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typedef tl::false_tag has_copy_constructor;
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typedef tl::false_tag has_default_constructor;
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};
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}
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#endif
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@ -22,6 +22,7 @@
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#include "gsiDecl.h"
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#include "dbNetlistDeviceExtractor.h"
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#include "dbNetlistDeviceExtractorClasses.h"
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namespace {
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@ -212,16 +213,32 @@ Class<db::NetlistDeviceExtractorLayerDefinition> decl_dbNetlistDeviceExtractorLa
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"This class has been introduced in version 0.26."
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);
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Class<NetlistDeviceExtractorImpl> decl_dbNetlistDeviceExtractor ("db", "NetlistDeviceExtractorImpl",
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gsi::method ("name", &NetlistDeviceExtractorImpl::name,
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Class<db::NetlistDeviceExtractor> decl_dbNetlistDeviceExtractor ("db", "DeviceExtractorBase",
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gsi::method ("name", &db::NetlistDeviceExtractor::name,
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"@brief Gets the name of the device extractor and the device class."
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) +
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gsi::iterator ("each_layer_definition", &db::NetlistDeviceExtractor::begin_layer_definitions, &db::NetlistDeviceExtractor::end_layer_definitions,
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"@brief Iterates over all layer definitions."
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) +
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gsi::iterator ("each_error", &db::NetlistDeviceExtractor::begin_errors, &db::NetlistDeviceExtractor::end_errors,
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"@brief Iterates over all errors collected in the device extractor."
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),
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"@brief The base class for all device extractors.\n"
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"This is an abstract base class for device extractors. See \\NetlistDeviceExtractor for a generic "
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"class which you can reimplement to supply your own customized device extractor. "
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"In many cases using one of the preconfigured specific device extractors may be useful already and "
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"it's not required to implement a custom one. For an example about a preconfigured device extractor see "
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"\\DeviceExtractorMOS3Transistor.\n"
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"\n"
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"This class cannot and should not be instantiated explicitly. Use one of the subclasses instead.\n"
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"\n"
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"This class has been introduced in version 0.26."
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);
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Class<NetlistDeviceExtractorImpl> decl_NetlistDeviceExtractorImpl (decl_dbNetlistDeviceExtractor, "db", "DeviceExtractor",
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gsi::method ("name=", &NetlistDeviceExtractorImpl::set_name,
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"@brief Sets the name of the device extractor and the device class."
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) +
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gsi::iterator ("each_layer_definition", &NetlistDeviceExtractorImpl::begin_layer_definitions, &NetlistDeviceExtractorImpl::end_layer_definitions,
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"@brief Iterates over all layer definitions."
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) +
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gsi::callback ("setup", &NetlistDeviceExtractorImpl::setup, &NetlistDeviceExtractorImpl::cb_setup,
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"@brief Sets up the extractor.\n"
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"This method is supposed to set up the device extractor. This involves three basic steps:\n"
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@ -368,4 +385,34 @@ Class<NetlistDeviceExtractorImpl> decl_dbNetlistDeviceExtractor ("db", "NetlistD
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"This class has been introduced in version 0.26."
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);
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db::NetlistDeviceExtractorMOS3Transistor *make_mos3_extractor (const std::string &name)
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{
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return new db::NetlistDeviceExtractorMOS3Transistor (name);
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}
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Class<db::NetlistDeviceExtractorMOS3Transistor> decl_NetlistDeviceExtractorMOS3Transistor (decl_dbNetlistDeviceExtractor, "db", "DeviceExtractorMOS3Transistor",
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gsi::constructor ("new", &make_mos3_extractor, gsi::arg ("name"),
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"@brief Creates a new device extractor with the given name."
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),
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"@brief A device extractor for a three-terminal MOS transistor\n"
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"\n"
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"This class supplies the generic extractor for a MOS device.\n"
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"The device is defined by two basic input layers: the diffusion area\n"
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"(source and drain) and the gate area. It requires a third layer\n"
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"(poly) to put the gate terminals on. The separation between poly\n"
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"and allows separating the device recognition layer (gate) from the\n"
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"conductive layer.\n"
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"\n"
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"The device class produced by this extractor is \\DeviceClassMOS3Transistor.\n"
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"The extractor extracts the four parameters of this class: L, W, AS and AD.\n"
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"\n"
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"The diffusion area is distributed on the number of gates connecting to\n"
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"the particular source or drain area.\n"
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"\n"
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"This class is a closed one and methods cannot be reimplemented. To reimplement "
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"specific methods, see \\DeviceExtractor.\n"
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"\n"
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"This class has been introduced in version 0.26."
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);
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}
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@ -21,7 +21,7 @@
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*/
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#include "dbNetlistDeviceExtractor.h"
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#include "dbNetlistDeviceExtractorClasses.h"
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#include "dbNetlistExtractor.h"
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#include "dbNetlistDeviceClasses.h"
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#include "dbLayout.h"
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@ -59,11 +59,11 @@ static std::string device_name (const db::Device &device)
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}
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class MOSFETExtractor
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: public db::NetlistDeviceExtractor
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: public db::NetlistDeviceExtractorMOS3Transistor
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{
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public:
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MOSFETExtractor (const std::string &name, db::Layout *debug_out)
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: db::NetlistDeviceExtractor (name), mp_debug_out (debug_out), m_ldiff (0), m_lgate (0)
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: db::NetlistDeviceExtractorMOS3Transistor (name), mp_debug_out (debug_out), m_ldiff (0), m_lgate (0)
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{
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if (mp_debug_out) {
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m_ldiff = mp_debug_out->insert_layer (db::LayerProperties (100, 0));
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@ -71,95 +71,6 @@ public:
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}
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}
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virtual void setup ()
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{
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define_layer ("SD", "Source/drain diffusion");
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define_layer ("G", "Gate");
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define_layer ("P", "Poly");
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register_device_class (new db::DeviceClassMOS3Transistor ());
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}
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virtual db::Connectivity get_connectivity (const db::Layout & /*layout*/, const std::vector<unsigned int> &layers) const
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{
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tl_assert (layers.size () == 3);
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unsigned int diff = layers [0];
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unsigned int gate = layers [1];
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// not used for device recognition: poly (2), but used for producing the gate terminals
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// The layer definition is diff, gate
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db::Connectivity conn;
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// collect all connected diffusion shapes
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conn.connect (diff, diff);
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// collect all connected gate shapes
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conn.connect (gate, gate);
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// connect gate with diff to detect gate/diffusion boundary
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conn.connect (diff, gate);
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return conn;
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}
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virtual void extract_devices (const std::vector<db::Region> &layer_geometry)
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{
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const db::Region &rdiff = layer_geometry [0];
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const db::Region &rgates = layer_geometry [1];
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for (db::Region::const_iterator p = rgates.begin_merged (); !p.at_end (); ++p) {
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db::Region rgate (*p);
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db::Region rdiff2gate = rdiff.selected_interacting (rgate);
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if (rdiff2gate.empty ()) {
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error (tl::to_string (tr ("Gate shape touches no diffusion - ignored")), *p);
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} else {
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unsigned int terminal_geometry_index = 0;
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unsigned int gate_geometry_index = 2;
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if (rdiff2gate.size () != 2) {
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error (tl::sprintf (tl::to_string (tr ("Expected two polygons on diff interacting one gate shape (found %d) - gate shape ignored")), int (rdiff2gate.size ())), *p);
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continue;
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}
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db::Edges edges (rgate.edges () & rdiff2gate.edges ());
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if (edges.size () != 2) {
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error (tl::sprintf (tl::to_string (tr ("Expected two edges interacting gate/diff (found %d) - width and length may be incorrect")), int (edges.size ())), *p);
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continue;
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}
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if (! p->is_box ()) {
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error (tl::to_string (tr ("Gate shape is not a box - width and length may be incorrect")), *p);
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}
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db::Device *device = create_device ();
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device->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_W, dbu () * edges.length () * 0.5);
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device->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_L, dbu () * (p->perimeter () - edges.length ()) * 0.5);
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int diff_index = 0;
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for (db::Region::const_iterator d = rdiff2gate.begin (); !d.at_end () && diff_index < 2; ++d, ++diff_index) {
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// count the number of gate shapes attached to this shape and distribute the area of the
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// diffusion region to the number of gates
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int n = rgates.selected_interacting (db::Region (*d)).size ();
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tl_assert (n > 0);
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device->set_parameter_value (diff_index == 0 ? db::DeviceClassMOS3Transistor::param_id_AS : db::DeviceClassMOS3Transistor::param_id_AD, dbu () * dbu () * d->area () / double (n));
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define_terminal (device, diff_index == 0 ? db::DeviceClassMOS3Transistor::terminal_id_S : db::DeviceClassMOS3Transistor::terminal_id_D, terminal_geometry_index, *d);
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}
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define_terminal (device, db::DeviceClassMOS3Transistor::terminal_id_G, gate_geometry_index, *p);
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// output the device for debugging
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device_out (device, rdiff2gate, rgate);
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}
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}
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}
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private:
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db::Layout *mp_debug_out;
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unsigned int m_ldiff, m_lgate;
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|
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