mirror of https://github.com/KLayout/klayout.git
WIP: new device classes
This commit is contained in:
Matthias Koefferlein
parent
3569ce391c
commit
a979b669db
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@ -144,6 +144,30 @@ void DeviceClassResistor::serial (Device *a, Device *b) const
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a->set_parameter_value (2, pa + pb);
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}
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// ------------------------------------------------------------------------------------
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// DeviceClassResistorWithBulk implementation
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DB_PUBLIC size_t DeviceClassResistorWithBulk::terminal_id_W = 2;
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DeviceClassResistorWithBulk::DeviceClassResistorWithBulk ()
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: DeviceClassResistor ()
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{
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add_terminal_definition (db::DeviceTerminalDefinition ("W", "Terminal W (well, bulk)"));
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}
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bool DeviceClassResistorWithBulk::combine_devices (Device *a, Device *b) const
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{
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db::Net *nab = a->net_for_terminal (2);
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db::Net *nbb = b->net_for_terminal (2);
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if (nab == nbb && DeviceClassResistor::combine_devices (a, b)) {
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a->join_terminals (2, b, 2);
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return true;
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} else {
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return false;
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}
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}
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// ------------------------------------------------------------------------------------
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// DeviceClassCapacitor implementation
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@ -196,6 +220,30 @@ void DeviceClassCapacitor::parallel (Device *a, Device *b) const
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a->set_parameter_value (2, pa + pb);
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}
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// ------------------------------------------------------------------------------------
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// DeviceClassCapacitorWithBulk implementation
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DB_PUBLIC size_t DeviceClassCapacitorWithBulk::terminal_id_W = 2;
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DeviceClassCapacitorWithBulk::DeviceClassCapacitorWithBulk ()
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: DeviceClassCapacitor ()
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{
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add_terminal_definition (db::DeviceTerminalDefinition ("W", "Terminal W (well, bulk)"));
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}
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bool DeviceClassCapacitorWithBulk::combine_devices (Device *a, Device *b) const
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{
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db::Net *nab = a->net_for_terminal (2);
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db::Net *nbb = b->net_for_terminal (2);
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if (nab == nbb && DeviceClassCapacitor::combine_devices (a, b)) {
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a->join_terminals (2, b, 2);
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return true;
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} else {
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return false;
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}
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}
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// ------------------------------------------------------------------------------------
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// DeviceClassInductor implementation
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@ -386,4 +434,55 @@ bool DeviceClassMOS4Transistor::combine_devices (Device *a, Device *b) const
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return false;
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}
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// ------------------------------------------------------------------------------------
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// DeviceClassBipolarTransistor implementation
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DB_PUBLIC size_t DeviceClassBipolarTransistor::param_id_AE = 0;
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DB_PUBLIC size_t DeviceClassBipolarTransistor::param_id_PE = 1;
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DB_PUBLIC size_t DeviceClassBipolarTransistor::terminal_id_C = 0;
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DB_PUBLIC size_t DeviceClassBipolarTransistor::terminal_id_B = 1;
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DB_PUBLIC size_t DeviceClassBipolarTransistor::terminal_id_E = 2;
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DeviceClassBipolarTransistor::DeviceClassBipolarTransistor ()
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{
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add_terminal_definition (db::DeviceTerminalDefinition ("C", "Collector"));
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add_terminal_definition (db::DeviceTerminalDefinition ("B", "Base"));
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add_terminal_definition (db::DeviceTerminalDefinition ("E", "Emitter"));
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add_parameter_definition (db::DeviceParameterDefinition ("AE", "Emitter area (square micrometer)", 0.0, false));
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add_parameter_definition (db::DeviceParameterDefinition ("PE", "Emitter perimeter (micrometer)", 0.0, false));
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}
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bool DeviceClassBipolarTransistor::combine_devices (Device *a, Device *b) const
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{
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const db::Net *nac = a->net_for_terminal (0);
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const db::Net *nab = a->net_for_terminal (1);
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const db::Net *nae = a->net_for_terminal (2);
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const db::Net *nbc = b->net_for_terminal (0);
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const db::Net *nbb = b->net_for_terminal (1);
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const db::Net *nbe = b->net_for_terminal (2);
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// parallel transistors can be combined into one
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if (nac == nbc && nae == nbe && nab == nbb) {
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combine_parameters (a, b);
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a->join_terminals (0, b, 0);
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a->join_terminals (1, b, 1);
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a->join_terminals (2, b, 2);
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return true;
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}
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return false;
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}
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void DeviceClassBipolarTransistor::combine_parameters (Device *a, Device *b) const
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{
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a->set_parameter_value (0, a->parameter_value (0) + b->parameter_value (0));
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a->set_parameter_value (1, a->parameter_value (1) + b->parameter_value (1));
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}
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}
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@ -76,6 +76,27 @@ public:
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}
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};
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/**
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* @brief A resistor device class with a bulk terminal (well, bulk)
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* In addition to DeviceClassResistor, this class defines a third terminal
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* ("W") for the bulk or well connection.
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*/
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class DB_PUBLIC DeviceClassResistorWithBulk
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: public db::DeviceClassResistor
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{
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public:
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DeviceClassResistorWithBulk ();
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virtual db::DeviceClass *clone () const
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{
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return new DeviceClassResistorWithBulk (*this);
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}
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static size_t terminal_id_W;
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virtual bool combine_devices (Device *a, Device *b) const;
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};
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/**
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* @brief A basic capacitor device class
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* A capacitor defines a single parameter, "C", which is the capacitance in Farad.
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@ -102,12 +123,33 @@ public:
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virtual void parallel (Device *a, Device *b) const;
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virtual void serial (Device *a, Device *b) const;
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virtual size_t normalize_terminal_id (size_t) const
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virtual size_t normalize_terminal_id (size_t id) const
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{
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return terminal_id_A;
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return id == terminal_id_B ? terminal_id_A : id;
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}
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};
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/**
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* @brief A capacitor device class with a bulk terminal (well, bulk)
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* In addition to DeviceClassCapacitor, this class defines a third terminal
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* ("W") for the bulk or well connection.
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*/
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class DB_PUBLIC DeviceClassCapacitorWithBulk
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: public db::DeviceClassCapacitor
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{
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public:
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DeviceClassCapacitorWithBulk ();
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virtual db::DeviceClass *clone () const
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{
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return new DeviceClassCapacitorWithBulk (*this);
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}
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static size_t terminal_id_W;
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virtual bool combine_devices (Device *a, Device *b) const;
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};
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/**
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* @brief A basic inductor device class
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* An inductor defines a single parameter, "L", which is the inductance in Henry.
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@ -132,9 +174,9 @@ public:
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virtual void parallel (Device *a, Device *b) const;
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virtual void serial (Device *a, Device *b) const;
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virtual size_t normalize_terminal_id (size_t) const
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virtual size_t normalize_terminal_id (size_t id) const
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{
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return terminal_id_A;
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return id == terminal_id_B ? terminal_id_A : id;
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}
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};
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@ -230,6 +272,37 @@ public:
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virtual bool combine_devices (Device *a, Device *b) const;
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};
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/**
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* @brief A bipolar transistor device class with three terminals
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* A MOSFET defines two parameters: "AE" for the emitter area in square micrometers and "PE" for the emitter perimeter
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* in micrometers.
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* The bipolar transistor defines three terminals, "C", "B" and "E" for collector, base and emitter.
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*/
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class DB_PUBLIC DeviceClassBipolarTransistor
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: public db::DeviceClass
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{
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public:
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DeviceClassBipolarTransistor ();
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static size_t param_id_AE;
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static size_t param_id_PE;
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static size_t terminal_id_C;
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static size_t terminal_id_B;
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static size_t terminal_id_E;
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virtual db::DeviceClass *clone () const
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{
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return new DeviceClassBipolarTransistor (*this);
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}
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virtual bool combine_devices (Device *a, Device *b) const;
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virtual bool supports_parallel_combination () const { return true; }
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protected:
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void combine_parameters (Device *a, Device *b) const;
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};
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}
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#endif
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@ -521,6 +521,21 @@ Device *NetlistDeviceExtractor::create_device ()
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return device;
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}
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void NetlistDeviceExtractor::define_terminal (Device *device, size_t terminal_id, size_t layer_index, const db::Region ®ion)
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{
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tl_assert (mp_layout != 0);
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tl_assert (geometry_index < m_layers.size ());
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unsigned int layer_index = m_layers [geometry_index];
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std::pair<db::Device *, geometry_per_terminal_type> &dd = m_new_devices[device->id ()];
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dd.first = device;
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std::vector<db::PolygonRef> &geo = dd.second[terminal_id][layer_index];
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for (db::Region::const_iterator p = region.begin_merged (); !p.at_end (); ++p) {
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geo.push_back (db::PolygonRef (*p, mp_layout->shape_repository ()));
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}
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}
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void NetlistDeviceExtractor::define_terminal (Device *device, size_t terminal_id, size_t geometry_index, const db::Polygon &polygon)
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{
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tl_assert (mp_layout != 0);
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@ -388,6 +388,11 @@ public:
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*/
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Device *create_device ();
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/**
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* @brief Defines a device terminal in the layout (a region)
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*/
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void define_terminal (Device *device, size_t terminal_id, size_t layer_index, const db::Region ®ion);
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/**
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* @brief Defines a device terminal in the layout (a polygon)
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*/
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@ -280,6 +280,33 @@ void NetlistDeviceExtractorResistor::extract_devices (const std::vector<db::Regi
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}
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}
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// ---------------------------------------------------------------------------------
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// NetlistDeviceExtractorResistorWithBulk implementation
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NetlistDeviceExtractorResistorWithBulk::NetlistDeviceExtractorResistorWithBulk (const std::string &name, double sheet_rho)
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: NetlistDeviceExtractorResistor (name, sheet_rho)
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{
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// .. nothing yet ..
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}
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void NetlistDeviceExtractorResistorWithBulk::setup ()
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{
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define_layer ("R", "Resistor"); // #0
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define_layer ("C", "Contacts"); // #1
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define_layer ("W", "Well/Bulk"); // #2
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define_layer ("tA", 1, "A terminal output"); // #3 -> C
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define_layer ("tB", 1, "B terminal output"); // #4 -> C
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define_layer ("tW", 2, "W terminal output"); // #5 -> W
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register_device_class (new db::DeviceClassResistorWithBulk ());
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}
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void NetlistDeviceExtractorResistorWithBulk::modify_device (const db::Polygon &res, const std::vector<db::Region> & /*layer_geometry*/, db::Device *device)
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{
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unsigned int bulk_terminal_geometry_index = 5;
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define_terminal (device, db::DeviceClassResistorWithBulk::terminal_id_W, bulk_terminal_geometry_index, res);
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}
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// ---------------------------------------------------------------------------------
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// NetlistDeviceExtractorCapacitor implementation
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@ -355,4 +382,126 @@ void NetlistDeviceExtractorCapacitor::extract_devices (const std::vector<db::Reg
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}
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}
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// ---------------------------------------------------------------------------------
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// NetlistDeviceExtractorCapacitorWithBulk implementation
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NetlistDeviceExtractorCapacitorWithBulk::NetlistDeviceExtractorCapacitorWithBulk (const std::string &name, double area_cap)
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: NetlistDeviceExtractorCapacitor (name, area_cap)
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{
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// .. nothing yet ..
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}
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void NetlistDeviceExtractorCapacitorWithBulk::setup ()
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{
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define_layer ("P1", "Plate 1"); // #0
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define_layer ("P2", "Plate 2"); // #1
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define_layer ("W", "Well/Bulk"); // #2
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define_layer ("tA", 0, "A terminal output"); // #3 -> P1
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define_layer ("tB", 1, "B terminal output"); // #4 -> P2
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define_layer ("tW", 2, "W terminal output"); // #5 -> W
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register_device_class (new db::DeviceClassCapacitorWithBulk ());
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}
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void NetlistDeviceExtractorCapacitorWithBulk::modify_device (const db::Polygon &cap, const std::vector<db::Region> & /*layer_geometry*/, db::Device *device)
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{
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unsigned int bulk_terminal_geometry_index = 5;
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define_terminal (device, db::DeviceClassCapacitorWithBulk::terminal_id_W, bulk_terminal_geometry_index, cap);
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}
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// ---------------------------------------------------------------------------------
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// NetlistDeviceExtractorBipolarTransistor implementation
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NetlistDeviceExtractorBipolarTransistor::NetlistDeviceExtractorBipolarTransistor (const std::string &name)
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: db::NetlistDeviceExtractor (name)
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{
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// .. nothing yet ..
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}
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void NetlistDeviceExtractorBipolarTransistor::setup ()
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{
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define_layer ("C", "Collector"); // #0
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define_layer ("B", "Base"); // #1
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define_layer ("E", "Emitter"); // #2
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// terminal output
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define_layer ("tC", 0, "Collector terminal output"); // #3 -> C
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define_layer ("tB", 1, "Base terminal output"); // #4 -> B
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define_layer ("tE", 2, "Emitter terminal output"); // #5 -> E
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register_device_class (new db::DeviceClassBipolarTransistor ());
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}
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db::Connectivity NetlistDeviceExtractorBipolarTransistor::get_connectivity (const db::Layout & /*layout*/, const std::vector<unsigned int> &layers) const
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{
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tl_assert (layers.size () >= 3);
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unsigned int collector = layers [0];
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unsigned int base = layers [1];
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unsigned int emitter = layers [2];
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db::Connectivity conn;
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// collect all connected base shapes. Join polygons.
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conn.connect (base, base);
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// collect all collector and emitter shapes connected with base
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conn.connect (base, collector);
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conn.connect (base, emitter);
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return conn;
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}
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void NetlistDeviceExtractorBipolarTransistor::extract_devices (const std::vector<db::Region> &layer_geometry)
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{
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unsigned int collector_geometry_index = 0;
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unsigned int base_geometry_index = 1;
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unsigned int emitter_geometry_index = 2;
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unsigned int collector_terminal_geometry_index = 3;
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unsigned int base_terminal_geometry_index = 4;
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unsigned int emitter_terminal_geometry_index = 5;
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const db::Region &rbases = layer_geometry [base_geometry_index];
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const db::Region &rcollectors = layer_geometry [collector_geometry_index];
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const db::Region &remitters = layer_geometry [emitter_geometry_index];
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for (db::Region::const_iterator p = rbases.begin_merged (); !p.at_end (); ++p) {
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db::Region rbase (*p);
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rbase.set_base_verbosity (rbases.base_verbosity ());
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db::Region rcollector2base = rbase & rcollectors;
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if (rcollector2base.empty ()) {
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rcollector2base = rbase;
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}
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db::Region remitter2base = rbase & remitters;
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if (remitter2base.empty ()) {
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error (tl::to_string (tr ("Base shape without emitters - ignored")), *p);
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} else {
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for (db::Region::const_iterator pe = remitter2base.begin_merged (); !pe.at_end (); ++pe) {
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db::Device *device = create_device ();
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device->set_trans (db::DCplxTrans ((pe->box ().center () - db::Point ()) * dbu ()));
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device->set_parameter_value (db::DeviceClassBipolarTransistor::param_id_AE, dbu () * dbu () * pe->area ());
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device->set_parameter_value (db::DeviceClassBipolarTransistor::param_id_PE, dbu () * pe->perimeter ());
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define_terminal (device, db::DeviceClassBipolarTransistor::terminal_id_C, collector_terminal_geometry_index, rcollector2base);
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define_terminal (device, db::DeviceClassBipolarTransistor::terminal_id_B, base_terminal_geometry_index, *p);
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define_terminal (device, db::DeviceClassBipolarTransistor::terminal_id_E, emitter_terminal_geometry_index, *pe);
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// allow derived classes to modify the device
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modify_device (*p, layer_geometry, device);
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// output the device for debugging
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device_out (device, rcollector2base, rbase, *pe);
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}
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}
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}
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}
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}
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@ -141,6 +141,22 @@ private:
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double m_sheet_rho;
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};
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/**
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* @brief A device extractor for a two-terminal resistor with a bulk terminal
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*
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* Extracts a resistor like NetlistDeviceExtractorResistor, but adds one more terminal
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* for the bulk or well the resistor is embedded in.
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*/
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class DB_PUBLIC NetlistDeviceExtractorResistorWithBulk
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: public db::NetlistDeviceExtractorResistor
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{
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public:
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NetlistDeviceExtractorResistorWithBulk (const std::string &name, double sheet_rho);
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virtual void setup ();
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virtual void modify_device (const db::Polygon &res, const std::vector<db::Region> & /*layer_geometry*/, db::Device *device);
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};
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/**
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* @brief A device extractor for a planar capacitor
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*
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@ -190,6 +206,73 @@ private:
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double m_area_cap;
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};
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/**
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* @brief A device extractor for a two-terminal capacitor with a bulk terminal
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*
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* Extracts a resistor like NetlistDeviceExtractorCapacitor, but adds one more terminal
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* for the bulk or well the capacitor is embedded in.
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*/
|
||||
class DB_PUBLIC NetlistDeviceExtractorCapacitorWithBulk
|
||||
: public db::NetlistDeviceExtractorCapacitor
|
||||
{
|
||||
public:
|
||||
NetlistDeviceExtractorCapacitorWithBulk (const std::string &name, double cap_area);
|
||||
|
||||
virtual void setup ();
|
||||
virtual void modify_device (const db::Polygon &cap, const std::vector<db::Region> & /*layer_geometry*/, db::Device *device);
|
||||
};
|
||||
|
||||
/**
|
||||
* @brief A device extractor for a bipolar transistor
|
||||
*
|
||||
* This class supplies the generic extractor for a bipolar transistor device.
|
||||
* Extraction of vertical and lateral transistors is supported through a generic geometry model:
|
||||
*
|
||||
* The basic area is the base area. A marker shape must be provided for this area.
|
||||
* The emitter of the transistor is defined by emitter layer shapes inside the base area.
|
||||
* Multiple emitter shapes can be present. In this case, multiple transistor devices sharing the
|
||||
* same base and collector are generated.
|
||||
*
|
||||
* Finally, a collector layer can be given. If non-empty, the parts inside the base region will define
|
||||
* the collector terminals. If empty, the collector is formed by the substrate. In this case, the base
|
||||
* region will be output to the 'tC' terminal output layer. This layer then needs to be connected to a global net
|
||||
* to form the net connection.
|
||||
*
|
||||
* The device class produced by this extractor is \\DeviceClassBipolarTransistor.
|
||||
* The extractor extracts the two parameters of this class: AE and PE.
|
||||
*
|
||||
* The device recognition layer names are 'C' (collector), 'B' (base) and 'E' (emitter).
|
||||
* The terminal output layer names are 'tC' (collector), 'tB' (base) and 'tE' (emitter).
|
||||
*/
|
||||
class DB_PUBLIC NetlistDeviceExtractorBipolarTransistor
|
||||
: public db::NetlistDeviceExtractor
|
||||
{
|
||||
public:
|
||||
NetlistDeviceExtractorBipolarTransistor (const std::string &name);
|
||||
|
||||
virtual void setup ();
|
||||
virtual db::Connectivity get_connectivity (const db::Layout &layout, const std::vector<unsigned int> &layers) const;
|
||||
virtual void extract_devices (const std::vector<db::Region> &layer_geometry);
|
||||
|
||||
protected:
|
||||
/**
|
||||
* @brief A callback when the device is produced
|
||||
* This callback is provided as a debugging port
|
||||
*/
|
||||
virtual void device_out (const db::Device * /*device*/, const db::Region & /*collector*/, const db::Region & /*base*/, const db::Polygon & /*emitter*/)
|
||||
{
|
||||
// .. no specific implementation ..
|
||||
}
|
||||
|
||||
/**
|
||||
* @brief Allow derived classes to modify the device
|
||||
*/
|
||||
virtual void modify_device (const db::Polygon & /*emitter*/, const std::vector<db::Region> & /*layer_geometry*/, db::Device * /*device*/)
|
||||
{
|
||||
// .. no specific implementation ..
|
||||
}
|
||||
};
|
||||
|
||||
}
|
||||
|
||||
namespace tl
|
||||
|
|
@ -213,12 +296,30 @@ template<> struct type_traits<db::NetlistDeviceExtractorCapacitor> : public tl::
|
|||
typedef tl::false_tag has_default_constructor;
|
||||
};
|
||||
|
||||
template<> struct type_traits<db::NetlistDeviceExtractorCapacitorWithBulk> : public tl::type_traits<void>
|
||||
{
|
||||
typedef tl::false_tag has_copy_constructor;
|
||||
typedef tl::false_tag has_default_constructor;
|
||||
};
|
||||
|
||||
template<> struct type_traits<db::NetlistDeviceExtractorResistor> : public tl::type_traits<void>
|
||||
{
|
||||
typedef tl::false_tag has_copy_constructor;
|
||||
typedef tl::false_tag has_default_constructor;
|
||||
};
|
||||
|
||||
template<> struct type_traits<db::NetlistDeviceExtractorResistorWithBulk> : public tl::type_traits<void>
|
||||
{
|
||||
typedef tl::false_tag has_copy_constructor;
|
||||
typedef tl::false_tag has_default_constructor;
|
||||
};
|
||||
|
||||
template<> struct type_traits<db::NetlistDeviceExtractorBipolarTransistor> : public tl::type_traits<void>
|
||||
{
|
||||
typedef tl::false_tag has_copy_constructor;
|
||||
typedef tl::false_tag has_default_constructor;
|
||||
};
|
||||
|
||||
}
|
||||
|
||||
#endif
|
||||
|
|
|
|||
|
|
@ -39,7 +39,7 @@ Class<db::DeviceClassResistor> decl_dbDeviceClassResistor (decl_dbDeviceClass, "
|
|||
"@brief A constant giving the parameter ID for parameter R"
|
||||
),
|
||||
"@brief A device class for a resistor.\n"
|
||||
"This class can be used to describe resistors. Resistors are defined by their combination behavior and "
|
||||
"This class describes a resistor. Resistors are defined by their combination behavior and "
|
||||
"the basic parameter 'R' which is the resistance in Ohm.\n"
|
||||
"\n"
|
||||
"A resistor has two terminals, A and B.\n"
|
||||
|
|
@ -47,6 +47,26 @@ Class<db::DeviceClassResistor> decl_dbDeviceClassResistor (decl_dbDeviceClass, "
|
|||
"This class has been introduced in version 0.26."
|
||||
);
|
||||
|
||||
Class<db::DeviceClassResistorWithBulk> decl_dbDeviceClassResistorWithBulk (decl_dbDeviceClass, "db", "DeviceClassResistorWithBulk",
|
||||
gsi::constant ("TERMINAL_A", db::DeviceClassResistorWithBulk::terminal_id_A,
|
||||
"@brief A constant giving the terminal ID for terminal A"
|
||||
) +
|
||||
gsi::constant ("TERMINAL_B", db::DeviceClassResistorWithBulk::terminal_id_B,
|
||||
"@brief A constant giving the terminal ID for terminal B"
|
||||
) +
|
||||
gsi::constant ("TERMINAL_W", db::DeviceClassResistorWithBulk::terminal_id_W,
|
||||
"@brief A constant giving the terminal ID for terminal W (well, bulk)"
|
||||
) +
|
||||
gsi::constant ("PARAM_R", db::DeviceClassResistorWithBulk::param_id_R,
|
||||
"@brief A constant giving the parameter ID for parameter R"
|
||||
),
|
||||
"@brief A device class for a resistor with a bulk terminal (substrate, well).\n"
|
||||
"This class is similar to \\DeviceClassResistor, but provides an additional terminal (BULK) for the "
|
||||
"well or substrate the resistor is embedded in.\n"
|
||||
"\n"
|
||||
"This class has been introduced in version 0.26."
|
||||
);
|
||||
|
||||
Class<db::DeviceClassCapacitor> decl_dbDeviceClassCapacitor (decl_dbDeviceClass, "db", "DeviceClassCapacitor",
|
||||
gsi::constant ("TERMINAL_A", db::DeviceClassCapacitor::terminal_id_A,
|
||||
"@brief A constant giving the terminal ID for terminal A"
|
||||
|
|
@ -58,7 +78,7 @@ Class<db::DeviceClassCapacitor> decl_dbDeviceClassCapacitor (decl_dbDeviceClass,
|
|||
"@brief A constant giving the parameter ID for parameter C"
|
||||
),
|
||||
"@brief A device class for a capacitor.\n"
|
||||
"This class can be used to describe capacitors. Capacitors are defined by their combination behavior and "
|
||||
"This describes a capacitor. Capacitors are defined by their combination behavior and "
|
||||
"the basic parameter 'C' which is the capacitance in Farad.\n"
|
||||
"\n"
|
||||
"A capacitor has two terminals, A and B.\n"
|
||||
|
|
@ -66,6 +86,26 @@ Class<db::DeviceClassCapacitor> decl_dbDeviceClassCapacitor (decl_dbDeviceClass,
|
|||
"This class has been introduced in version 0.26."
|
||||
);
|
||||
|
||||
Class<db::DeviceClassCapacitorWithBulk> decl_dbDeviceClassCapacitorWithBulk (decl_dbDeviceClass, "db", "DeviceClassCapacitorWithBulk",
|
||||
gsi::constant ("TERMINAL_A", db::DeviceClassCapacitorWithBulk::terminal_id_A,
|
||||
"@brief A constant giving the terminal ID for terminal A"
|
||||
) +
|
||||
gsi::constant ("TERMINAL_B", db::DeviceClassCapacitorWithBulk::terminal_id_B,
|
||||
"@brief A constant giving the terminal ID for terminal B"
|
||||
) +
|
||||
gsi::constant ("TERMINAL_W", db::DeviceClassCapacitorWithBulk::terminal_id_W,
|
||||
"@brief A constant giving the terminal ID for terminal W (well, bulk)"
|
||||
) +
|
||||
gsi::constant ("PARAM_C", db::DeviceClassCapacitorWithBulk::param_id_C,
|
||||
"@brief A constant giving the parameter ID for parameter C"
|
||||
),
|
||||
"@brief A device class for a capacitor with a bulk terminal (substrate, well).\n"
|
||||
"This class is similar to \\DeviceClassCapacitor, but provides an additional terminal (BULK) for the "
|
||||
"well or substrate the capacitor is embedded in.\n"
|
||||
"\n"
|
||||
"This class has been introduced in version 0.26."
|
||||
);
|
||||
|
||||
Class<db::DeviceClassInductor> decl_dbDeviceClassInductor (decl_dbDeviceClass, "db", "DeviceClassInductor",
|
||||
gsi::constant ("TERMINAL_A", db::DeviceClassInductor::terminal_id_A,
|
||||
"@brief A constant giving the terminal ID for terminal A"
|
||||
|
|
@ -77,7 +117,7 @@ Class<db::DeviceClassInductor> decl_dbDeviceClassInductor (decl_dbDeviceClass, "
|
|||
"@brief A constant giving the parameter ID for parameter L"
|
||||
),
|
||||
"@brief A device class for an inductor.\n"
|
||||
"This class can be used to describe inductors. Inductors are defined by their combination behavior and "
|
||||
"This class describes an inductor. Inductors are defined by their combination behavior and "
|
||||
"the basic parameter 'L' which is the inductance in Henry.\n"
|
||||
"\n"
|
||||
"An inductor has two terminals, A and B.\n"
|
||||
|
|
@ -96,7 +136,7 @@ Class<db::DeviceClassDiode> decl_dbDeviceClassDiode (decl_dbDeviceClass, "db", "
|
|||
"@brief A constant giving the parameter ID for parameter A"
|
||||
),
|
||||
"@brief A device class for a diode.\n"
|
||||
"This class can be used to describe diodes. Diodes are defined by their combination behavior and "
|
||||
"This class descibes a diode. Diodes are defined by their combination behavior and "
|
||||
"the basic parameter 'A' which is their area in square micrometers.\n"
|
||||
"\n"
|
||||
"Diodes only combine when parallel and in the same direction. In this case, their areas are added."
|
||||
|
|
@ -106,6 +146,30 @@ Class<db::DeviceClassDiode> decl_dbDeviceClassDiode (decl_dbDeviceClass, "db", "
|
|||
"This class has been introduced in version 0.26."
|
||||
);
|
||||
|
||||
Class<db::DeviceClassBipolarTransistor> decl_DeviceClassBipolarTransistor (decl_dbDeviceClass, "db", "DeviceClassBipolarTransistor",
|
||||
gsi::constant ("TERMINAL_C", db::DeviceClassBipolarTransistor::terminal_id_C,
|
||||
"@brief A constant giving the terminal ID for terminal C (collector)"
|
||||
) +
|
||||
gsi::constant ("TERMINAL_B", db::DeviceClassBipolarTransistor::terminal_id_B,
|
||||
"@brief A constant giving the terminal ID for terminal B (base)"
|
||||
) +
|
||||
gsi::constant ("TERMINAL_E", db::DeviceClassBipolarTransistor::terminal_id_E,
|
||||
"@brief A constant giving the terminal ID for terminal E (emitter)"
|
||||
) +
|
||||
gsi::constant ("PARAM_AE", db::DeviceClassBipolarTransistor::param_id_AE,
|
||||
"@brief A constant giving the parameter ID for parameter AE (emitter area)"
|
||||
) +
|
||||
gsi::constant ("PARAM_PE", db::DeviceClassBipolarTransistor::param_id_PE,
|
||||
"@brief A constant giving the parameter ID for parameter PE (emitter perimeter)"
|
||||
),
|
||||
"@brief A device class for a bipolar transistor.\n"
|
||||
"This class describes a bipolar transistor. Bipolar transistors have tree terminals: the collector (C), the base (B) and the emitter (E).\n"
|
||||
"Multi-emitter transistors are resolved in individual devices. The basic parameter of a transistor is the emitter area (AE). "
|
||||
"In addition, the emitter perimeter is extracted too (PE)."
|
||||
"\n"
|
||||
"This class has been introduced in version 0.26."
|
||||
);
|
||||
|
||||
Class<db::DeviceClassMOS3Transistor> decl_dbDeviceClassMOS3Transistor (decl_dbDeviceClass, "db", "DeviceClassMOS3Transistor",
|
||||
gsi::constant ("TERMINAL_S", db::DeviceClassMOS3Transistor::terminal_id_S,
|
||||
"@brief A constant giving the terminal ID for terminal S"
|
||||
|
|
@ -135,7 +199,7 @@ Class<db::DeviceClassMOS3Transistor> decl_dbDeviceClassMOS3Transistor (decl_dbDe
|
|||
"@brief A constant giving the parameter ID for parameter PD"
|
||||
),
|
||||
"@brief A device class for a 3-terminal MOS transistor.\n"
|
||||
"This class can be used to describe MOS transistors without a bulk terminal. "
|
||||
"This class describes a MOS transistor without a bulk terminal. "
|
||||
"A device class for a MOS transistor with a bulk terminal is \\DeviceClassMOS4Transistor. "
|
||||
"MOS transistors are defined by their combination behavior and the basic parameters.\n"
|
||||
"\n"
|
||||
|
|
@ -183,7 +247,7 @@ Class<db::DeviceClassMOS4Transistor> decl_dbDeviceClassMOS4Transistor (decl_dbDe
|
|||
"@brief A constant giving the parameter ID for parameter PD"
|
||||
),
|
||||
"@brief A device class for a 4-terminal MOS transistor.\n"
|
||||
"This class can be used to describe MOS transistors with a bulk terminal. "
|
||||
"This class describes a MOS transistor with a bulk terminal. "
|
||||
"A device class for a MOS transistor without a bulk terminal is \\DeviceClassMOS3Transistor. "
|
||||
"MOS transistors are defined by their combination behavior and the basic parameters.\n"
|
||||
"\n"
|
||||
|
|
|
|||
|
|
@ -411,7 +411,10 @@ Class<db::NetlistDeviceExtractorMOS3Transistor> decl_NetlistDeviceExtractorMOS3T
|
|||
"conductive layer.\n"
|
||||
"\n"
|
||||
"The device class produced by this extractor is \\DeviceClassMOS3Transistor.\n"
|
||||
"The extractor extracts the four parameters of this class: L, W, AS and AD.\n"
|
||||
"The extractor extracts the six parameters of this class: L, W, AS, AD, PS and PD.\n"
|
||||
"\n"
|
||||
"The device recognition layer names are 'SD' (source/drain) and 'G' (gate).\n"
|
||||
"The terminal output layer names are 'tS' (source), 'tG' (gate) and 'tD' (drain).\n"
|
||||
"\n"
|
||||
"The diffusion area is distributed on the number of gates connecting to\n"
|
||||
"the particular source or drain area.\n"
|
||||
|
|
@ -442,11 +445,14 @@ Class<db::NetlistDeviceExtractorMOS4Transistor> decl_NetlistDeviceExtractorMOS4T
|
|||
"conductive layer.\n"
|
||||
"\n"
|
||||
"The bulk terminal layer can be an empty layer representing the substrate.\n"
|
||||
"In this use mode the bulk terminal shapes will be produced there. This\n"
|
||||
"layer then needs to be connected to a global net to establish the net.\n"
|
||||
"In this use mode the bulk terminal shapes will be produced on the 'tB' layer. This\n"
|
||||
"layer then needs to be connected to a global net to establish the net connection.\n"
|
||||
"\n"
|
||||
"The device class produced by this extractor is \\DeviceClassMOS4Transistor.\n"
|
||||
"The extractor extracts the four parameters of this class: L, W, AS and AD.\n"
|
||||
"The extractor extracts the six parameters of this class: L, W, AS, AD, PS and PD.\n"
|
||||
"\n"
|
||||
"The device recognition layer names are 'SD' (source/drain), 'G' (gate) and 'W' (well, bulk).\n"
|
||||
"The terminal output layer names are 'tS' (source), 'tG' (gate), 'tD' (drain) and 'tB' (bulk).\n"
|
||||
"\n"
|
||||
"The diffusion area is distributed on the number of gates connecting to\n"
|
||||
"the particular source or drain area.\n"
|
||||
|
|
@ -480,6 +486,43 @@ Class<db::NetlistDeviceExtractorResistor> decl_NetlistDeviceExtractorResistor (d
|
|||
"Using the given sheet resistance, the resistance value is computed by "
|
||||
"'R = L / W * sheet_rho'.\n"
|
||||
"\n"
|
||||
"The device class produced by this extractor is \\DeviceClassResistor.\n"
|
||||
"The extractor extracts the three parameters of this class: R, A and P.\n"
|
||||
"\n"
|
||||
"The device recognition layer names are 'R' (resistor) and 'C' (contacts).\n"
|
||||
"The terminal output layer names are 'tA' (terminal A) and 'tB' (terminal B).\n"
|
||||
"\n"
|
||||
"This class is a closed one and methods cannot be reimplemented. To reimplement "
|
||||
"specific methods, see \\DeviceExtractor.\n"
|
||||
"\n"
|
||||
"This class has been introduced in version 0.26."
|
||||
);
|
||||
|
||||
db::NetlistDeviceExtractorResistorWithBulk *make_res_with_bulk_extractor (const std::string &name, double sheet_rho)
|
||||
{
|
||||
return new db::NetlistDeviceExtractorResistorWithBulk (name, sheet_rho);
|
||||
}
|
||||
|
||||
Class<db::NetlistDeviceExtractorResistorWithBulk> decl_NetlistDeviceExtractorResistorWithBulk (decl_dbNetlistDeviceExtractor, "db", "DeviceExtractorResistorWithBulk",
|
||||
gsi::constructor ("new", &make_res_with_bulk_extractor, gsi::arg ("name"), gsi::arg ("sheet_rho"),
|
||||
"@brief Creates a new device extractor with the given name."
|
||||
),
|
||||
"@brief A device extractor for a resistor with a bulk terminal\n"
|
||||
"\n"
|
||||
"This class supplies the generic extractor for a resistor device including a bulk terminal.\n"
|
||||
"The device is defined the same way than devices are defined for \\DeviceExtractorResistor.\n"
|
||||
"\n"
|
||||
"In addition, a bulk terminal layer must be provided.\n"
|
||||
"The bulk terminal layer can be an empty layer representing the substrate.\n"
|
||||
"In this use mode the bulk terminal shapes will be produced on the 'tW' layer. This\n"
|
||||
"layer then needs to be connected to a global net to establish the net connection.\n"
|
||||
"\n"
|
||||
"The device class produced by this extractor is \\DeviceClassResistorWithBulk.\n"
|
||||
"The extractor extracts the three parameters of this class: R, A and P.\n"
|
||||
"\n"
|
||||
"The device recognition layer names are 'R' (resistor), 'C' (contacts) and 'W' (well, bulk).\n"
|
||||
"The terminal output layer names are 'tA' (terminal A), 'tB' (terminal B) and 'tW' (well, bulk).\n"
|
||||
"\n"
|
||||
"This class is a closed one and methods cannot be reimplemented. To reimplement "
|
||||
"specific methods, see \\DeviceExtractor.\n"
|
||||
"\n"
|
||||
|
|
@ -502,6 +545,77 @@ Class<db::NetlistDeviceExtractorCapacitor> decl_NetlistDeviceExtractorCapacitor
|
|||
"The capacitance is computed from the overlapping area of the plates "
|
||||
"using 'C = A * area_cap' (area_cap is the capacitance per square micrometer area).\n"
|
||||
"\n"
|
||||
"The device class produced by this extractor is \\DeviceClassCapacitor.\n"
|
||||
"The extractor extracts the three parameters of this class: C, A and P.\n"
|
||||
"\n"
|
||||
"The device recognition layer names are 'P1' (plate 1) and 'P2' (plate 2).\n"
|
||||
"The terminal output layer names are 'tA' (terminal A) and 'tB' (terminal B).\n"
|
||||
"\n"
|
||||
"This class is a closed one and methods cannot be reimplemented. To reimplement "
|
||||
"specific methods, see \\DeviceExtractor.\n"
|
||||
"\n"
|
||||
"This class has been introduced in version 0.26."
|
||||
);
|
||||
|
||||
db::NetlistDeviceExtractorCapacitorWithBulk *make_cap_with_bulk_extractor (const std::string &name, double area_cap)
|
||||
{
|
||||
return new db::NetlistDeviceExtractorCapacitorWithBulk (name, area_cap);
|
||||
}
|
||||
|
||||
Class<db::NetlistDeviceExtractorCapacitorWithBulk> decl_NetlistDeviceExtractorCapacitorWithBulk (decl_dbNetlistDeviceExtractor, "db", "DeviceExtractorCapacitorWithBulk",
|
||||
gsi::constructor ("new", &make_cap_with_bulk_extractor, gsi::arg ("name"), gsi::arg ("sheet_rho"),
|
||||
"@brief Creates a new device extractor with the given name."
|
||||
),
|
||||
"@brief A device extractor for a capacitor with a bulk terminal\n"
|
||||
"\n"
|
||||
"This class supplies the generic extractor for a capacitor device including a bulk terminal.\n"
|
||||
"The device is defined the same way than devices are defined for \\DeviceExtractorCapacitor.\n"
|
||||
"\n"
|
||||
"In addition, a bulk terminal layer must be provided.\n"
|
||||
"The bulk terminal layer can be an empty layer representing the substrate.\n"
|
||||
"In this use mode the bulk terminal shapes will be produced on the 'tW' layer. This\n"
|
||||
"layer then needs to be connected to a global net to establish the net connection.\n"
|
||||
"\n"
|
||||
"The device class produced by this extractor is \\DeviceClassCapacitorWithBulk.\n"
|
||||
"The extractor extracts the three parameters of this class: C, A and P.\n"
|
||||
"\n"
|
||||
"The device recognition layer names are 'P1' (plate 1), 'P2' (plate 2) and 'W' (well, bulk).\n"
|
||||
"The terminal output layer names are 'tA' (terminal A), 'tB' (terminal B) and 'tW' (well, bulk).\n"
|
||||
"\n"
|
||||
"This class is a closed one and methods cannot be reimplemented. To reimplement "
|
||||
"specific methods, see \\DeviceExtractor.\n"
|
||||
"\n"
|
||||
"This class has been introduced in version 0.26."
|
||||
);
|
||||
|
||||
db::NetlistDeviceExtractorBipolarTransistor *make_bjt_extractor (const std::string &name)
|
||||
{
|
||||
return new db::NetlistDeviceExtractorBipolarTransistor (name);
|
||||
}
|
||||
|
||||
Class<db::NetlistDeviceExtractorBipolarTransistor> decl_NetlistDeviceExtractorBipolarTransistor (decl_dbNetlistDeviceExtractor, "db", "DeviceExtractorBipolarTransistor",
|
||||
gsi::constructor ("new", &make_bjt_extractor, gsi::arg ("name"),
|
||||
"@brief Creates a new device extractor with the given name."
|
||||
),
|
||||
"@brief A device extractor for a bipolar transistor\n"
|
||||
"\n"
|
||||
"This class supplies the generic extractor for a bipolar transistor device.\n"
|
||||
"Extraction of vertical and lateral transistors is supported through a generic geometry model: "
|
||||
"The basic area is the base area. A marker shape must be provided for this area. "
|
||||
"The emitter of the transistor is defined by emitter layer shapes inside the base area. "
|
||||
"Multiple emitter shapes can be present. In this case, multiple transistor devices sharing the "
|
||||
"same base and collector are generated.\n"
|
||||
"Finally, a collector layer can be given. If non-empty, the parts inside the base region will define "
|
||||
"the collector terminals. If empty, the collector is formed by the substrate. In this case, the base "
|
||||
"region will be output to the 'tC' terminal output layer. This layer then needs to be connected to a global net "
|
||||
"to form the net connection.\n"
|
||||
"\n"
|
||||
"The device class produced by this extractor is \\DeviceClassBipolarTransistor.\n"
|
||||
"The extractor extracts the two parameters of this class: AE and PE.\n"
|
||||
"\n"
|
||||
"The device recognition layer names are 'C' (collector), 'B' (base) and 'E' (emitter).\n"
|
||||
"The terminal output layer names are 'tC' (collector), 'tB' (base) and 'tE' (emitter).\n"
|
||||
"\n"
|
||||
"This class is a closed one and methods cannot be reimplemented. To reimplement "
|
||||
"specific methods, see \\DeviceExtractor.\n"
|
||||
"\n"
|
||||
|
|
|
|||
Loading…
Reference in New Issue