mirror of
https://github.com/KLayout/klayout.git
synced 2026-08-22 14:07:15 +02:00
Unique net names for Spice netlist writer
This commit is contained in:
Vendored
+26
@@ -0,0 +1,26 @@
|
||||
* written by unit test
|
||||
|
||||
* cell SUBCKT
|
||||
* pin
|
||||
* pin A
|
||||
* pin V42
|
||||
* pin Z
|
||||
* pin gnd
|
||||
* pin gnd
|
||||
.SUBCKT SUBCKT 1 2 4 5 6 7
|
||||
* net 2 A
|
||||
* net 4 V42
|
||||
* net 5 Z
|
||||
* net 6 gnd
|
||||
* net 7 gnd
|
||||
* device instance $1 r0 *1 0,0 HVPMOS
|
||||
XD_$1 4 3 5 1 HVPMOS PARAMS: L=0.2 W=1 AS=0.18 AD=0.18 PS=2.16 PD=2.16
|
||||
* device instance $2 r0 *1 0,0 HVPMOS
|
||||
XD_$2 4 2 3 1 HVPMOS PARAMS: L=0.2 W=1 AS=0.18 AD=0.18 PS=2.16 PD=2.16
|
||||
* device instance $3 r0 *1 0,0 HVNMOS
|
||||
XD_$3 6 3 6 7 HVNMOS PARAMS: L=1.13 W=2.12 PS=6 PD=6 AS=0 AD=0
|
||||
* device instance $4 r0 *1 0,0 HVNMOS
|
||||
XD_$4 6 3 5 7 HVNMOS PARAMS: L=0.4 W=0.4 PS=1.16 PD=1.16 AS=0.19 AD=0.19
|
||||
* device instance $5 r0 *1 0,0 HVNMOS
|
||||
XD_$5 6 2 3 7 HVNMOS PARAMS: L=0.4 W=0.4 PS=1.76 PD=1.76 AS=0.19 AD=0.19
|
||||
.ENDS SUBCKT
|
||||
Vendored
+21
@@ -0,0 +1,21 @@
|
||||
* written by unit test
|
||||
|
||||
* cell SUBCKT
|
||||
* pin
|
||||
* pin A
|
||||
* pin V42
|
||||
* pin Z
|
||||
* pin gnd
|
||||
* pin gnd
|
||||
.SUBCKT SUBCKT \$1 A V42 Z gnd gnd$1
|
||||
* device instance $1 r0 *1 0,0 HVPMOS
|
||||
XD_$1 V42 \$3 Z \$1 HVPMOS PARAMS: L=0.2 W=1 AS=0.18 AD=0.18 PS=2.16 PD=2.16
|
||||
* device instance $2 r0 *1 0,0 HVPMOS
|
||||
XD_$2 V42 A \$3 \$1 HVPMOS PARAMS: L=0.2 W=1 AS=0.18 AD=0.18 PS=2.16 PD=2.16
|
||||
* device instance $3 r0 *1 0,0 HVNMOS
|
||||
XD_$3 gnd \$3 gnd gnd$1 HVNMOS PARAMS: L=1.13 W=2.12 PS=6 PD=6 AS=0 AD=0
|
||||
* device instance $4 r0 *1 0,0 HVNMOS
|
||||
XD_$4 gnd \$3 Z gnd$1 HVNMOS PARAMS: L=0.4 W=0.4 PS=1.16 PD=1.16 AS=0.19 AD=0.19
|
||||
* device instance $5 r0 *1 0,0 HVNMOS
|
||||
XD_$5 gnd A \$3 gnd$1 HVNMOS PARAMS: L=0.4 W=0.4 PS=1.76 PD=1.76 AS=0.19 AD=0.19
|
||||
.ENDS SUBCKT
|
||||
Vendored
+103
@@ -0,0 +1,103 @@
|
||||
#%l2n-klayout
|
||||
W(CIRCUIT)
|
||||
U(0.001)
|
||||
D(D$HVPMOS HVPMOS
|
||||
T(S
|
||||
)
|
||||
T(G
|
||||
)
|
||||
T(D
|
||||
)
|
||||
T(B
|
||||
)
|
||||
)
|
||||
D(D$HVNMOS HVNMOS
|
||||
T(S
|
||||
)
|
||||
T(G
|
||||
)
|
||||
T(D
|
||||
)
|
||||
T(B
|
||||
)
|
||||
)
|
||||
X(SUBCKT
|
||||
N(1
|
||||
)
|
||||
N(2 I(A)
|
||||
)
|
||||
N(3
|
||||
)
|
||||
N(4 I(V42)
|
||||
)
|
||||
N(5 I(Z)
|
||||
)
|
||||
N(6 I(gnd)
|
||||
)
|
||||
N(7 I(gnd)
|
||||
)
|
||||
P(1)
|
||||
P(2 I(A))
|
||||
P(4 I(V42))
|
||||
P(5 I(Z))
|
||||
P(6 I(gnd))
|
||||
P(7 I(gnd))
|
||||
D(1 D$HVPMOS
|
||||
E(L 0.2)
|
||||
E(W 1)
|
||||
E(AS 0.18)
|
||||
E(AD 0.18)
|
||||
E(PS 2.16)
|
||||
E(PD 2.16)
|
||||
T(S 4)
|
||||
T(G 3)
|
||||
T(D 5)
|
||||
T(B 1)
|
||||
)
|
||||
D(2 D$HVPMOS
|
||||
E(L 0.2)
|
||||
E(W 1)
|
||||
E(AS 0.18)
|
||||
E(AD 0.18)
|
||||
E(PS 2.16)
|
||||
E(PD 2.16)
|
||||
T(S 4)
|
||||
T(G 2)
|
||||
T(D 3)
|
||||
T(B 1)
|
||||
)
|
||||
D(3 D$HVNMOS
|
||||
E(L 1.13)
|
||||
E(W 2.12)
|
||||
E(PS 6)
|
||||
E(PD 6)
|
||||
T(S 6)
|
||||
T(G 3)
|
||||
T(D 6)
|
||||
T(B 7)
|
||||
)
|
||||
D(4 D$HVNMOS
|
||||
E(L 0.4)
|
||||
E(W 0.4)
|
||||
E(AS 0.19)
|
||||
E(AD 0.19)
|
||||
E(PS 1.16)
|
||||
E(PD 1.16)
|
||||
T(S 6)
|
||||
T(G 3)
|
||||
T(D 5)
|
||||
T(B 7)
|
||||
)
|
||||
D(5 D$HVNMOS
|
||||
E(L 0.4)
|
||||
E(W 0.4)
|
||||
E(AS 0.19)
|
||||
E(AD 0.19)
|
||||
E(PS 1.76)
|
||||
E(PD 1.76)
|
||||
T(S 6)
|
||||
T(G 2)
|
||||
T(D 3)
|
||||
T(B 7)
|
||||
)
|
||||
)
|
||||
Reference in New Issue
Block a user