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Normalize S/D choice on MOS transistor extraction for better test reproducability

This commit is contained in:
Matthias Koefferlein 2021-06-03 17:32:38 +02:00
parent a762797d58
commit 7aaddcf205
1 changed files with 14 additions and 9 deletions
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23
src/db/db/dbNetlistDeviceExtractorClasses.cc
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@ -144,13 +144,18 @@ void NetlistDeviceExtractorMOS3Transistor::extract_devices (const std::vector<db
continue; continue;
} }
std::vector<db::Edges::length_type> widths; // normalize the diffusion polygons so that the S/D assignment is more predicable
std::vector<db::Polygon> diffpoly;
diffpoly.reserve (2);
for (db::Region::const_iterator d2g = rdiff2gate.begin (); ! d2g.at_end (); ++d2g) { for (db::Region::const_iterator d2g = rdiff2gate.begin (); ! d2g.at_end (); ++d2g) {
diffpoly.push_back (*d2g);
}
std::sort (diffpoly.begin (), diffpoly.end ());
db::Region rd2g; std::vector<db::Edges::length_type> widths;
rd2g.insert (*d2g); for (std::vector<db::Polygon>::const_iterator d2g = diffpoly.begin (); d2g != diffpoly.end (); ++d2g) {
db::Edges edges (rgate.edges () & rd2g.edges ()); db::Edges edges (rgate.edges () & db::Edges (*d2g));
db::Edges::length_type l = edges.length (); db::Edges::length_type l = edges.length ();
if (l == 0) { if (l == 0) {
error (tl::to_string (tr ("Vanishing edges for interaction gate/diff (corner interaction) - gate shape ignored"))); error (tl::to_string (tr ("Vanishing edges for interaction gate/diff (corner interaction) - gate shape ignored")));
@ -179,18 +184,18 @@ void NetlistDeviceExtractorMOS3Transistor::extract_devices (const std::vector<db
device->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_L, param_l); device->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_L, param_l);
int diff_index = 0; int diff_index = 0;
for (db::Region::const_iterator d = rdiff2gate.begin (); !d.at_end () && diff_index < 2; ++d, ++diff_index) { for (std::vector<db::Polygon>::const_iterator d2g = diffpoly.begin (); d2g != diffpoly.end () && diff_index < 2; ++d2g, ++diff_index) {
// count the number of gate shapes attached to this shape and distribute the area of the // count the number of gate shapes attached to this shape and distribute the area of the
// diffusion region to the number of gates // diffusion region to the number of gates
size_t n = rgates.selected_interacting (db::Region (*d)).count (); size_t n = rgates.selected_interacting (db::Region (*d2g)).count ();
tl_assert (n > 0); tl_assert (n > 0);
device->set_parameter_value (diff_index == 0 ? db::DeviceClassMOS3Transistor::param_id_AS : db::DeviceClassMOS3Transistor::param_id_AD, sdbu () * sdbu () * d->area () / double (n)); device->set_parameter_value (diff_index == 0 ? db::DeviceClassMOS3Transistor::param_id_AS : db::DeviceClassMOS3Transistor::param_id_AD, sdbu () * sdbu () * d2g->area () / double (n));
device->set_parameter_value (diff_index == 0 ? db::DeviceClassMOS3Transistor::param_id_PS : db::DeviceClassMOS3Transistor::param_id_PD, sdbu () * d->perimeter () / double (n)); device->set_parameter_value (diff_index == 0 ? db::DeviceClassMOS3Transistor::param_id_PS : db::DeviceClassMOS3Transistor::param_id_PD, sdbu () * d2g->perimeter () / double (n));
unsigned int sd_index = diff_index == 0 ? source_terminal_geometry_index : drain_terminal_geometry_index; unsigned int sd_index = diff_index == 0 ? source_terminal_geometry_index : drain_terminal_geometry_index;
define_terminal (device, diff_index == 0 ? db::DeviceClassMOS3Transistor::terminal_id_S : db::DeviceClassMOS3Transistor::terminal_id_D, sd_index, *d); define_terminal (device, diff_index == 0 ? db::DeviceClassMOS3Transistor::terminal_id_S : db::DeviceClassMOS3Transistor::terminal_id_D, sd_index, *d2g);
} }