Custom devices for device extractor - tests in the DRC framework

This commit is contained in:
Matthias Koefferlein 2019-03-10 22:37:32 +01:00
parent 510c675d21
commit 41fdd74189
7 changed files with 304 additions and 4 deletions

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@ -100,9 +100,9 @@ namespace tl
template<> struct type_traits<GenericDeviceExtractor> : public tl::type_traits<void>
{
// mark "NetlistDeviceExtractor" as not having a default ctor and no copy ctor
// mark "NetlistDeviceExtractor" as having a default ctor and no copy ctor
typedef tl::false_tag has_copy_constructor;
typedef tl::false_tag has_default_constructor;
typedef tl::true_tag has_default_constructor;
};
}
@ -212,7 +212,7 @@ Class<db::NetlistDeviceExtractor> decl_dbNetlistDeviceExtractor ("db", "DeviceEx
"@brief Iterates over all errors collected in the device extractor."
),
"@brief The base class for all device extractors.\n"
"This is an abstract base class for device extractors. See \\NetlistDeviceExtractor for a generic "
"This is an abstract base class for device extractors. See \\GenericDeviceExtractor for a generic "
"class which you can reimplement to supply your own customized device extractor. "
"In many cases using one of the preconfigured specific device extractors may be useful already and "
"it's not required to implement a custom one. For an example about a preconfigured device extractor see "

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@ -438,6 +438,66 @@ TEST(10_NetlistExtractionFlat)
EXPECT_EQ (drc.run (), 0);
// verify
{
tl::InputStream is (output);
tl::InputStream is_au (au);
if (is.read_all () != is_au.read_all ()) {
_this->raise (tl::sprintf ("Compare failed - see\n actual: %s\n golden: %s",
tl::absolute_file_path (output),
tl::absolute_file_path (au)));
}
}
{
tl::InputStream is (output_simplified);
tl::InputStream is_au (au_simplified);
if (is.read_all () != is_au.read_all ()) {
_this->raise (tl::sprintf ("Compare failed (simplified netlist) - see\n actual: %s\n golden: %s",
tl::absolute_file_path (output_simplified),
tl::absolute_file_path (au_simplified)));
}
}
}
TEST(11_CustomDevices)
{
std::string rs = tl::testsrc ();
rs += "/testdata/drc/drcSimpleTests_11.drc";
std::string input = tl::testsrc ();
input += "/testdata/drc/vdiv.gds";
std::string au = tl::testsrc ();
au += "/testdata/drc/drcSimpleTests_au11a.cir";
std::string au_simplified = tl::testsrc ();
au_simplified += "/testdata/drc/drcSimpleTests_au11b.cir";
std::string output = this->tmp_file ("tmp.cir");
std::string output_simplified = this->tmp_file ("tmp_simplified.cir");
{
// Set some variables
lym::Macro config;
config.set_text (tl::sprintf (
"$drc_test_source = '%s'\n"
"$drc_test_target = '%s'\n"
"$drc_test_target_simplified = '%s'\n"
, input, output, output_simplified)
);
config.set_interpreter (lym::Macro::Ruby);
EXPECT_EQ (config.run (), 0);
}
lym::Macro drc;
drc.load_from (rs);
EXPECT_EQ (drc.run (), 0);
// verify
{

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@ -1,4 +1,4 @@
# Hierarchical extraction
# Flat extraction
source($drc_test_source)

204
testdata/drc/drcSimpleTests_11.drc vendored Normal file
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@ -0,0 +1,204 @@
source($drc_test_source)
# Drawing layers
nwell = input(1, 0)
diff = input(2, 0)
pplus = input(3, 0)
nplus = input(4, 0)
poly = input(5, 0)
thickox = input(6, 0)
polyres = input(7, 0)
contact = input(8, 0)
metal1 = input(9, 0)
via = input(10, 0)
metal2 = input(11, 0)
# Special layer for bulk terminals
bulk = make_layer
# Computed layers
poly_not_res = poly - polyres
poly_in_res = poly & polyres
diff_in_nwell = diff & nwell
pdiff = diff_in_nwell - nplus
ntie = diff_in_nwell & nplus
pgate = pdiff & poly_not_res
psd = pdiff - pgate
hv_pgate = pgate & thickox
lv_pgate = pgate - hv_pgate
hv_psd = psd & thickox
lv_psd = psd - thickox
diff_outside_nwell = diff - nwell
ndiff = diff_outside_nwell - pplus
ptie = diff_outside_nwell & pplus
ngate = ndiff & poly_not_res
nsd = ndiff - ngate
hv_ngate = ngate & thickox
lv_ngate = ngate - hv_ngate
hv_nsd = nsd & thickox
lv_nsd = nsd - thickox
# Resistor device extraction
class CustomResistorExtraction < RBA::GenericDeviceExtractor
def initialize(name, sheet_rho)
self.name = name
@sheet_rho = sheet_rho
end
def setup
define_layer("M", "Marker")
define_layer("C", "Conductor")
define_layer("R", "Resistor")
register_device_class (RBA::DeviceClassResistor::new);
end
def extract_devices(layer_geometry)
marker = layer_geometry[0]
conductor = layer_geometry[1]
resistor = layer_geometry[2]
conductor_geometry_index = 1
resistor_merged = resistor.merged
marker_edges = marker.merged.edges & resistor_merged.edges
resistor_merged.each do |r|
connection_edges = marker_edges.interacting(RBA::Region::new(r))
terminals = connection_edges.extended_out(1)
if terminals.size != 2
error("Resistor shape does not touch marker border in exactly two places", r)
else
# A = L*W
# P = 2*(L+W)
# -> L = p+sqrt(p*p-A)
# -> W = p-sqrt(p*p-A)
# (p=P/4)
p = 0.25 * r.perimeter
a = r.area
d = Math.sqrt(p * p - a)
l = p + d
w = p - d
if w > 1e-3
device = create_device
device.set_parameter(RBA::DeviceClassResistor::PARAM_R, @sheet_rho * l / w);
define_terminal(device, RBA::DeviceClassResistor::TERMINAL_A, conductor_geometry_index, terminals[0]);
define_terminal(device, RBA::DeviceClassResistor::TERMINAL_B, conductor_geometry_index, terminals[1]);
end
end
end
end
def get_connectivity(layout, layers)
# the layer definition is marker, conductor, resistor
# * resistor is used for extraction
# * conductor is used for producing the terminals
# * marker is included because it's required for the extraction
marker = layers[0]
conductor = layers[1]
resistor = layers[2]
conn = RBA::Connectivity::new
conn.connect(resistor, resistor)
conn.connect(conductor, resistor)
conn.connect(marker, resistor)
return conn;
end
end
# Resistor
# Assumes a sheet rho of 150 Ohm/Square
res_ex = CustomResistorExtraction::new("RES", 150.0)
extract_devices(res_ex, { "C" => poly_not_res, "R" => poly_in_res, "M" => polyres })
# PMOS transistor device extraction
hvpmos_ex = RBA::DeviceExtractorMOS4Transistor::new("HVPMOS")
extract_devices(hvpmos_ex, { "SD" => psd, "G" => hv_pgate, "P" => poly_not_res, "W" => nwell })
lvpmos_ex = RBA::DeviceExtractorMOS4Transistor::new("LVPMOS")
extract_devices(lvpmos_ex, { "SD" => psd, "G" => lv_pgate, "P" => poly_not_res, "W" => nwell })
# NMOS transistor device extraction
lvnmos_ex = RBA::DeviceExtractorMOS4Transistor::new("LVNMOS")
extract_devices(lvnmos_ex, { "SD" => nsd, "G" => lv_ngate, "P" => poly_not_res, "W" => bulk })
hvnmos_ex = RBA::DeviceExtractorMOS4Transistor::new("HVNMOS")
extract_devices(hvnmos_ex, { "SD" => nsd, "G" => hv_ngate, "P" => poly_not_res, "W" => bulk })
# Define connectivity for netlist extraction
# Inter-layer
connect(contact, ntie)
connect(contact, ptie)
connect(nwell, ntie)
connect(psd, contact)
connect(nsd, contact)
connect(poly_not_res, contact)
connect(contact, metal1)
connect(metal1, via)
connect(via, metal2)
# Global connections
connect_global(ptie, "BULK")
connect_global(bulk, "BULK")
# Actually performs the extraction
netlist = l2n_data.netlist
# Write the netlist
writer = RBA::NetlistSpiceWriter::new
writer = RBA::NetlistSpiceWriter::new
netlist.write($drc_test_target, writer, "VDIV netlist before simplification")
# Netlist simplification
# NOTE: use make_top_level_pins before combine_devices as the pin
# stops the three resistors to be combined into one
netlist.make_top_level_pins
netlist.combine_devices
netlist.purge
netlist.purge_nets
netlist.write($drc_test_target_simplified, writer, "VDIV netlist after simplification")

17
testdata/drc/drcSimpleTests_au11a.cir vendored Normal file
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@ -0,0 +1,17 @@
* VDIV netlist before simplification
* cell TOP
.SUBCKT TOP
* net 1 OUT
* net 2 GND
* net 4 IN
* net 7 VDD
* device instance $1 1.025,0.335 RES
R$1 6 1 7650
* device instance $2 2.85,0.335 RES
R$2 3 1 7650
* device instance $3 4.665,0.335 RES
R$3 3 2 2670
* device instance $4 1.765,7.485 HVPMOS
M$4 6 4 7 7 MHVPMOS L=0.25U W=1.5U AS=0.63P AD=0.63P PS=3.84U PD=3.84U
.ENDS TOP

19
testdata/drc/drcSimpleTests_au11b.cir vendored Normal file
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@ -0,0 +1,19 @@
* VDIV netlist after simplification
* cell TOP
* pin OUT
* pin GND
* pin IN
* pin VDD
.SUBCKT TOP 1 2 3 5
* net 1 OUT
* net 2 GND
* net 3 IN
* net 5 VDD
* device instance $1 1.025,0.335 RES
R$1 4 1 7650
* device instance $2 2.85,0.335 RES
R$2 2 1 10320
* device instance $4 1.765,7.485 HVPMOS
M$4 4 3 5 5 MHVPMOS L=0.25U W=1.5U AS=0.63P AD=0.63P PS=3.84U PD=3.84U
.ENDS TOP

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