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UberDDR3
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bring all timing parameters to top

This commit is contained in:
AngeloJacobo 2024-12-29 21:22:52 +08:00
parent d424bcdf4e
commit f636dcbd2e
3 changed files with 49 additions and 37 deletions
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2
example_demo/alinx_ax7325b/ax7325b_spd_reader.xdc
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@ -33,5 +33,5 @@ set_property PACKAGE_PIN E18 [get_ports {led[3]}]
set_property IOSTANDARD LVCMOS33 [get_ports {led[3]}]
##############uart define###########################
set_property IOSTANDARD LVCMOS33 [get_ports uart_tx]
set_property IOSTANDARD LVCMOS25 [get_ports uart_tx]
set_property PACKAGE_PIN AK26 [get_ports uart_tx]

71
rtl/ddr3_controller.v
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@ -46,11 +46,6 @@
//`define DDR3_1333_9_9_9
//`define DDR3_1066_7_7_7
//
//DDR3 Capacity
`define RAM_8Gb
//`define RAM_2Gb
//`define RAM_4Gb
//`define RAM_8Gb
module ddr3_controller #(
parameter integer CONTROLLER_CLK_PERIOD = 10_000, //ps, clock period of the controller interface
@ -64,6 +59,12 @@ module ddr3_controller #(
WB2_ADDR_BITS = 7, //width of 2nd wishbone address bus
WB2_DATA_BITS = 32, //width of 2nd wishbone data bus
DUAL_RANK_DIMM = 0, // enable dual rank DIMM (1 = enable, 0 = disable)
// DDR3 timing parameter values
parameter SPEED_BIN = 3, // 0 = Use top-level parameters , 1 = DDR3-1066 (7-7-7) , 2 = DR3-1333 (9-9-9) , 3 = DDR3-1600 (11-11-11)
SDRAM_CAPACITY = 5, // 0 = 256Mb, 1 = 512Mb, 2 = 1Gb, 3 = 2Gb, 4 = 4Gb, 5 = 8Gb, 6 = 16Gb
TRCD = 13_750, // ps Active to Read/Write command time (only used if SPEED_BIN = 0)
TRP = 13_750, // ps Precharge command period (only used if SPEED_BIN = 0)
TRAS = 35_000, // ps ACT to PRE command period (only used if SPEED_BIN = 0)
parameter[0:0] MICRON_SIM = 0, //enable faster simulation for micron ddr3 model (shorten POWER_ON_RESET_HIGH and INITIAL_CKE_LOW)
ODELAY_SUPPORTED = 1, //set to 1 when ODELAYE2 is supported
SECOND_WISHBONE = 0, //set to 1 if 2nd wishbone is needed
@ -208,36 +209,34 @@ module ddr3_controller #(
/********************************************************** Timing Parameters ***********************************************************************************/
localparam DELAY_SLOT_WIDTH = 19; //Bitwidth of the delay slot and mode register slot on the reset/refresh rom will be at the same size as the Mode Register
localparam POWER_ON_RESET_HIGH = 200_000_000; // 200_000_000 ps (200 us) reset must be active at initialization
localparam INITIAL_CKE_LOW = 500_000_000; // 500_000_000 ps (500 us) cke must be low before activating
`ifdef DDR3_1600_11_11_11 //DDR3-1600 (11-11-11) speed bin
localparam tRCD = 13_750; // ps Active to Read/Write command time
localparam tRP = 13_750; // ps Precharge command period
localparam tRAS = 35_000; // ps ACT to PRE command period
`elsif DDR3_1333_9_9_9 //DDR3-1333 (9-9-9) speed bin
localparam tRCD = 13_500; // ps Active to Read/Write command time
localparam tRP = 13_500; // ps Precharge command period
localparam tRAS = 36_000; // ps ACT to PRE command period
`elsif DDR3_1066_7_7_7 //DDR3-1066 (7-7-7) speed bin
localparam tRCD = 13_125; // ps Active to Read/Write command time
localparam tRP = 13_125; // ps Precharge command period
localparam tRAS = 37_500; // ps ACT to PRE command period
`else
"Throw an error here if speed bin is not recognized (or not defined)"
`endif
`ifdef RAM_1Gb
localparam tRFC = 110_000; // ps Refresh command to ACT or REF
`elsif RAM_2Gb
localparam tRFC = 160_000; // ps Refresh command to ACT or REF
`elsif RAM_4Gb
localparam tRFC = 300_000; // ps Refresh command to ACT or REF
`elsif RAM_8Gb
localparam tRFC = 350_000; // ps Refresh command to ACT or REF
`else
"Throw an error here if capacity is not recognized (or not defined)"
`endif
localparam POWER_ON_RESET_HIGH = 200_000_000; // 200_000_000 ps (200 us) reset must be active at initialization
localparam INITIAL_CKE_LOW = 500_000_000; // 500_000_000 ps (500 us) cke must be low before activating
// ps Active to Read/Write command time
localparam tRCD = (SPEED_BIN == 0) ? TRCD : // use top-level parameters
(SPEED_BIN == 1) ? 13_750 : // DDR3-1066 (7-7-7)
(SPEED_BIN == 2) ? 13_500 : // DDR3-1333 (9-9-9)
(SPEED_BIN == 3) ? 13_750 : 13_750; // DDR3-1600 (11-11-11)
// ps Precharge command period
localparam tRP = (SPEED_BIN == 0) ? TRP : // use top-level parameters
(SPEED_BIN == 1) ? 13_750 : // DDR3-1066 (7-7-7)
(SPEED_BIN == 2) ? 13_500 : // DDR3-1333 (9-9-9)
(SPEED_BIN == 3) ? 13_750 : 13_750; // DDR3-1600 (11-11-11)
// ps ACT to PRE command period
localparam tRAS = (SPEED_BIN == 0) ? TRAS : // use top-level parameters
(SPEED_BIN == 1) ? 35_000 : // DDR3-1066 (7-7-7)
(SPEED_BIN == 2) ? 36_000 : // DDR3-1333 (9-9-9)
(SPEED_BIN == 3) ? 35_000 : 35_000; // DDR3-1600 (11-11-11)
// ps Refresh command to ACT or REF
localparam tRFC = ((SDRAM_CAPACITY == 4'b0000) || (SDRAM_CAPACITY == 4'b0001)) ? 90_000 : // 256Mb, 512Mb
(SDRAM_CAPACITY == 4'b0010) ? 110_000 : // 1Gb
(SDRAM_CAPACITY == 4'b0011) ? 160_000 : // 2Gb
(SDRAM_CAPACITY == 4'b0100) ? 300_000 : // 4Gb
(SDRAM_CAPACITY == 4'b0101) ? 350_000 : 350_000; // 8Gb
localparam tREFI = 7_800_000; //ps Average periodic refresh interval
localparam tXPR = max(5*DDR3_CLK_PERIOD, tRFC+10_000); // ps Exit Reset from CKE HIGH to a valid command
localparam tWR = 15_000; // ps Write Recovery Time
@ -3160,7 +3159,9 @@ ALTERNATE_WRITE_READ: if(!o_wb_stall_calib) begin
// find anticipate activate command slot number
if(CL_nCK > CWL_nCK) slot_number[1:0] = read_slot[1:0];
else slot_number[1:0] = write_slot[1:0];
delay = ps_to_nCK(tRCD);
// delay = ps_to_nCK(tRCD);
delay = $rtoi( $ceil( tRCD*1.0/ DDR3_CLK_PERIOD ) );
for(slot_number = slot_number; delay != 0; delay = delay - 1) begin
slot_number[1:0] = slot_number[1:0] - 1'b1;
end

13
rtl/ddr3_top.v
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@ -41,6 +41,12 @@ module ddr3_top #(
WB2_ADDR_BITS = 7, //width of 2nd wishbone address bus
WB2_DATA_BITS = 32, //width of 2nd wishbone data bus
DUAL_RANK_DIMM = 0, // enable dual rank DIMM (1 = enable, 0 = disable)
// DDR3 timing parameter values
parameter SPEED_BIN = 3, // 0 = Use top-level parameters , 1 = DDR3-1066 (7-7-7) , 2 = DR3-1333 (9-9-9) , 3 = DDR3-1600 (11-11-11)
SDRAM_CAPACITY = 5, // 0 = 256Mb, 1 = 512Mb, 2 = 1Gb, 3 = 2Gb, 4 = 4Gb, 5 = 8Gb, 6 = 16Gb
TRCD = 13_750, // ps Active to Read/Write command time (only used if SPEED_BIN = 0)
TRP = 13_750, // ps Precharge command period (only used if SPEED_BIN = 0)
TRAS = 35_000, // ps ACT to PRE command period (only used if SPEED_BIN = 0)
parameter[0:0] MICRON_SIM = 0, //enable faster simulation for micron ddr3 model (shorten POWER_ON_RESET_HIGH and INITIAL_CKE_LOW)
ODELAY_SUPPORTED = 0, //set to 1 when ODELAYE2 is supported
SECOND_WISHBONE = 0, //set to 1 if 2nd wishbone for debugging is needed
@ -256,7 +262,12 @@ ddr3_top #(
.SKIP_INTERNAL_TEST(SKIP_INTERNAL_TEST), // skip built-in self test (would require >2 seconds of internal test right after calibration)
.DIC(DIC), //Output Driver Impedance Control (2'b00 = RZQ/6, 2'b01 = RZQ/7, RZQ = 240ohms)
.RTT_NOM(RTT_NOM), //RTT Nominal (3'b000 = disabled, 3'b001 = RZQ/4, 3'b010 = RZQ/2 , 3'b011 = RZQ/6, RZQ = 240ohms)
.DUAL_RANK_DIMM(DUAL_RANK_DIMM) // enable dual rank DIMM (1 = enable, 0 = disable)
.DUAL_RANK_DIMM(DUAL_RANK_DIMM), // enable dual rank DIMM (1 = enable, 0 = disable)
.SPEED_BIN(SPEED_BIN), // 0 = Use top-level parameters , 1 = DDR3-1066 (7-7-7) , 2 = DR3-1333 (9-9-9) , 3 = DDR3-1600 (11-11-11)
.SDRAM_CAPACITY(SDRAM_CAPACITY), // 0 = 256Mb, 1 = 512Mb, 2 = 1Gb, 3 = 2Gb, 4 = 4Gb, 5 = 8Gb, 6 = 16Gb
.TRCD(TRCD), // ps Active to Read/Write command time (only used if SPEED_BIN = 0)
.TRP(TRP), // ps Precharge command period (only used if SPEED_BIN = 0)
.TRAS(TRAS) // ps ACT to PRE command period (only used if SPEED_BIN = 0)
) ddr3_controller_inst (
.i_controller_clk(i_controller_clk), //i_controller_clk has period of CONTROLLER_CLK_PERIOD
.i_rst_n(i_rst_n), //200MHz input clock