run @ 125MHz with yosys
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@ -24,16 +24,16 @@ module clk_wiz
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.DIVCLK_DIVIDE (1),
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.CLKFBOUT_MULT (20), // 50 MHz * 20 = 1000 MHz
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.CLKFBOUT_PHASE (0.000),
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.CLKOUT0_DIVIDE (12), // 1000 MHz / 12 = 83.333 MHz
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.CLKOUT0_DIVIDE (8), // 1000 MHz / 8 = 125 MHz
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.CLKOUT0_PHASE (0.000),
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.CLKOUT0_DUTY_CYCLE (0.500),
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.CLKOUT1_DIVIDE (3), // 1000 MHz / 3 = 333.333 MHz
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.CLKOUT1_DIVIDE (2), // 1000 MHz / 2 = 500 MHz
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.CLKOUT1_PHASE (0.000),
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.CLKOUT1_DUTY_CYCLE (0.500),
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.CLKOUT2_DIVIDE (5), // 1000 MHz / 5 = 200 MHz
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.CLKOUT2_PHASE (0.000),
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.CLKOUT2_DUTY_CYCLE (0.500),
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.CLKOUT3_DIVIDE (3), // 1000 MHz / 3 = 333.333 MHz, 90 phase
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.CLKOUT3_DIVIDE (2), // 1000 MHz / 2 = 500 MHz, 90 phase
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.CLKOUT3_PHASE (90.000),
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.CLKOUT3_DUTY_CYCLE (0.500),
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.CLKIN1_PERIOD (20.000) // 50 MHz input
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@ -141,8 +141,8 @@
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// DDR3 Controller
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ddr3_top #(
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.CONTROLLER_CLK_PERIOD(12_000), //ps, clock period of the controller interface
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.DDR3_CLK_PERIOD(3_000), //ps, clock period of the DDR3 RAM device (must be 1/4 of the CONTROLLER_CLK_PERIOD)
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.CONTROLLER_CLK_PERIOD(10_000), //ps, clock period of the controller interface
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.DDR3_CLK_PERIOD(2_500), //ps, clock period of the DDR3 RAM device (must be 1/4 of the CONTROLLER_CLK_PERIOD)
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.ROW_BITS(14), //width of row address
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.COL_BITS(10), //width of column address
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.BA_BITS(3), //width of bank address
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@ -152,7 +152,9 @@
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.WB2_DATA_BITS(32), //width of 2nd wishbone data bus
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.MICRON_SIM(0), //enable faster simulation for micron ddr3 model (shorten POWER_ON_RESET_HIGH and INITIAL_CKE_LOW)
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.ODELAY_SUPPORTED(1), //set to 1 when ODELAYE2 is supported
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.SECOND_WISHBONE(0) //set to 1 if 2nd wishbone is needed
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.SECOND_WISHBONE(0), //set to 1 if 2nd wishbone is needed
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.BIST_MODE(1), // 0 = No BIST, 1 = run through all address space ONCE , 2 = run through all address space for every test (burst w/r, random w/r, alternating r/w)
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.SPEED_BIN(1) // 0 = Use top-level parameters , 1 = DDR3-1066 (7-7-7) , 2 = DR3-1333 (9-9-9) , 3 = DDR3-1600 (11-11-11)
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) ddr3_top
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(
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//clock and reset
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