OpenRAM/compiler/bitcells/replica_bitcell.py

56 lines
2.2 KiB
Python

# See LICENSE for licensing information.
#
# Copyright (c) 2016-2019 Regents of the University of California and The Board
# of Regents for the Oklahoma Agricultural and Mechanical College
# (acting for and on behalf of Oklahoma State University)
# All rights reserved.
#
import debug
import bitcell_base
from tech import cell_properties as props
class replica_bitcell(bitcell_base.bitcell_base):
"""
A single bit cell (6T, 8T, etc.)
This module implements the single memory cell used in the design. It
is a hand-made cell, so the layout and netlist should be available in
the technology library. """
pin_names = [props.bitcell.cell_6t.pin.bl,
props.bitcell.cell_6t.pin.br,
props.bitcell.cell_6t.pin.wl,
props.bitcell.cell_6t.pin.vdd,
props.bitcell.cell_6t.pin.gnd]
type_list = ["OUTPUT", "OUTPUT", "INPUT", "POWER", "GROUND"]
def __init__(self, name):
super().__init__(name)
debug.info(2, "Create replica bitcell object")
def get_stage_effort(self, load):
parasitic_delay = 1
size = 0.5 #This accounts for bitline being drained thought the access TX and internal node
cin = 3 #Assumes always a minimum sizes inverter. Could be specified in the tech.py file.
read_port_load = 0.5 #min size NMOS gate load
return logical_effort.logical_effort('bitline', size, cin, load+read_port_load, parasitic_delay, False)
def input_load(self):
"""Return the relative capacitance of the access transistor gates"""
# FIXME: This applies to bitline capacitances as well.
access_tx_cin = parameter["6T_access_size"]/drc["minwidth_tx"]
return 2*access_tx_cin
def analytical_power(self, corner, load):
"""Bitcell power in nW. Only characterizes leakage."""
from tech import spice
leakage = spice["bitcell_leakage"]
dynamic = 0 #temporary
total_power = self.return_power(dynamic, leakage)
return total_power
def build_graph(self, graph, inst_name, port_nets):
"""Adds edges based on inputs/outputs. Overrides base class function."""
self.add_graph_edges(graph, port_nets)